DE602006016276D1 - Speicherblocklöschung in einer flash-speicher-vorrichtung - Google Patents

Speicherblocklöschung in einer flash-speicher-vorrichtung

Info

Publication number
DE602006016276D1
DE602006016276D1 DE602006016276T DE602006016276T DE602006016276D1 DE 602006016276 D1 DE602006016276 D1 DE 602006016276D1 DE 602006016276 T DE602006016276 T DE 602006016276T DE 602006016276 T DE602006016276 T DE 602006016276T DE 602006016276 D1 DE602006016276 D1 DE 602006016276D1
Authority
DE
Germany
Prior art keywords
erase
memory cells
read operation
block deletion
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006016276T
Other languages
English (en)
Inventor
Seiichi Aritome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE602006016276D1 publication Critical patent/DE602006016276D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE602006016276T 2005-05-11 2006-05-10 Speicherblocklöschung in einer flash-speicher-vorrichtung Active DE602006016276D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/126,682 US7391654B2 (en) 2005-05-11 2005-05-11 Memory block erasing in a flash memory device
PCT/US2006/018246 WO2006122245A1 (en) 2005-05-11 2006-05-10 Memory block erasing in a flash memory device

Publications (1)

Publication Number Publication Date
DE602006016276D1 true DE602006016276D1 (de) 2010-09-30

Family

ID=36954231

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006016276T Active DE602006016276D1 (de) 2005-05-11 2006-05-10 Speicherblocklöschung in einer flash-speicher-vorrichtung

Country Status (9)

Country Link
US (4) US7391654B2 (de)
EP (1) EP1894206B1 (de)
JP (1) JP4655245B2 (de)
KR (1) KR100940422B1 (de)
CN (1) CN101176165B (de)
AT (1) ATE478422T1 (de)
DE (1) DE602006016276D1 (de)
TW (1) TWI335511B (de)
WO (1) WO2006122245A1 (de)

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US7733706B2 (en) * 2006-09-29 2010-06-08 Hynix Semiconductor Inc. Flash memory device and erase method thereof
JP2008117195A (ja) * 2006-11-06 2008-05-22 Hitachi Ltd 半導体記憶装置
US7619918B2 (en) * 2006-12-29 2009-11-17 Intel Corporation Apparatus, method, and system for flash memory
WO2008101316A1 (en) * 2007-02-22 2008-08-28 Mosaid Technologies Incorporated Apparatus and method for using a page buffer of a memory device as a temporary cache
US7804718B2 (en) * 2007-03-07 2010-09-28 Mosaid Technologies Incorporated Partial block erase architecture for flash memory
US7986553B2 (en) * 2007-06-15 2011-07-26 Micron Technology, Inc. Programming of a solid state memory utilizing analog communication of bit patterns
US7586787B2 (en) * 2007-09-20 2009-09-08 Kilopass Technology Inc. Reducing bit line leakage current in non-volatile memories
US7952927B2 (en) 2007-12-05 2011-05-31 Micron Technology, Inc. Adjusting program and erase voltages in a memory device
US7675778B2 (en) * 2007-12-05 2010-03-09 Micron Technology, Inc. Memory devices having reduced word line current and method of operating and manufacturing the same
US7755940B2 (en) * 2007-12-05 2010-07-13 Micron Technology, Inc. Method, apparatus, and system for erasing memory
KR101458955B1 (ko) * 2008-01-04 2014-11-10 삼성전자주식회사 넓은 패스 전압 윈도우를 얻는 플래쉬 메모리 장치의프로그램 검증 방법
US7969806B2 (en) * 2008-04-28 2011-06-28 Qimonda Ag Systems and methods for writing to a memory
KR100954946B1 (ko) * 2008-05-20 2010-04-27 주식회사 하이닉스반도체 불휘발성 메모리 소자의 소거 방법
US7965554B2 (en) * 2008-07-02 2011-06-21 Sandisk Corporation Selective erase operation for non-volatile storage
US7852683B2 (en) * 2008-07-02 2010-12-14 Sandisk Corporation Correcting for over programming non-volatile storage
US8014209B2 (en) 2008-07-02 2011-09-06 Sandisk Technologies Inc. Programming and selectively erasing non-volatile storage
JP5646369B2 (ja) 2011-03-01 2014-12-24 株式会社東芝 不揮発性半導体記憶装置
KR101193059B1 (ko) * 2011-04-21 2012-10-22 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 동작 방법
CN102609334B (zh) * 2012-01-09 2016-05-04 晨星软件研发(深圳)有限公司 非易失闪存擦除异常存储块修复方法和装置
US9589644B2 (en) 2012-10-08 2017-03-07 Micron Technology, Inc. Reducing programming disturbance in memory devices
US8848452B1 (en) * 2013-04-04 2014-09-30 Spansion Llc Erase verification circuitry for simultaneously and consecutively verifying a plurality of odd and even-numbered flash memory transistors and method thereof
KR102083547B1 (ko) 2013-04-12 2020-03-02 삼성전자주식회사 플래시 메모리와 메모리 컨트롤러를 포함하는 데이터 저장 장치 및 그것의 배드 페이지 관리 방법
KR102285462B1 (ko) 2014-03-26 2021-08-05 삼성전자주식회사 불휘발성 메모리 및 메모리 컨트롤러를 포함하는 메모리 시스템의 동작 방법
US9236139B1 (en) 2015-02-11 2016-01-12 Sandisk Technologies Inc. Reduced current program verify in non-volatile memory
US9343160B1 (en) 2015-02-11 2016-05-17 Sandisk Technologies Inc. Erase verify in non-volatile memory
KR102567373B1 (ko) * 2018-03-16 2023-08-17 에스케이하이닉스 주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
CN109214217B (zh) * 2018-09-07 2021-11-26 深圳市航顺芯片技术研发有限公司 一种微控制器芯片防破解的方法
US11061578B2 (en) * 2019-08-05 2021-07-13 Micron Technology, Inc. Monitoring flash memory erase progress using erase credits
CN111240587A (zh) * 2019-12-30 2020-06-05 深圳市芯天下技术有限公司 非易失存储器的擦除方法及装置
US11935603B2 (en) * 2021-11-04 2024-03-19 Infineon Technologies LLC Erase power loss indicator (EPLI) implementation in flash memory device

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JP3863330B2 (ja) * 1999-09-28 2006-12-27 株式会社東芝 不揮発性半導体メモリ
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KR100463195B1 (ko) * 2001-08-28 2004-12-23 삼성전자주식회사 가속 열 스캔닝 스킴을 갖는 불 휘발성 반도체 메모리 장치
JP2003068086A (ja) * 2001-08-28 2003-03-07 Mitsubishi Electric Corp 不揮発性半導体記憶装置
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JP3866650B2 (ja) * 2002-11-29 2007-01-10 株式会社東芝 不揮発性半導体記憶装置及びその消去ベリファイ方法
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Also Published As

Publication number Publication date
TW200707189A (en) 2007-02-16
EP1894206A1 (de) 2008-03-05
US20070183223A1 (en) 2007-08-09
EP1894206B1 (de) 2010-08-18
WO2006122245A1 (en) 2006-11-16
US20060256622A1 (en) 2006-11-16
US20060262607A1 (en) 2006-11-23
KR100940422B1 (ko) 2010-02-02
US7515481B2 (en) 2009-04-07
US20060262606A1 (en) 2006-11-23
TWI335511B (en) 2011-01-01
ATE478422T1 (de) 2010-09-15
US7372742B2 (en) 2008-05-13
JP4655245B2 (ja) 2011-03-23
KR20080009329A (ko) 2008-01-28
US7391654B2 (en) 2008-06-24
JP2008541330A (ja) 2008-11-20
CN101176165B (zh) 2010-12-08
CN101176165A (zh) 2008-05-07

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