ATE387714T1 - Verfolgen der am häufigsten gelöschten blöcke eines nichtflüchtigen speichersystems - Google Patents
Verfolgen der am häufigsten gelöschten blöcke eines nichtflüchtigen speichersystemsInfo
- Publication number
- ATE387714T1 ATE387714T1 AT03752244T AT03752244T ATE387714T1 AT E387714 T1 ATE387714 T1 AT E387714T1 AT 03752244 T AT03752244 T AT 03752244T AT 03752244 T AT03752244 T AT 03752244T AT E387714 T1 ATE387714 T1 AT E387714T1
- Authority
- AT
- Austria
- Prior art keywords
- elements
- erased
- derated
- tracking
- blocks
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
- G06F2212/1036—Life time enhancement
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7211—Wear leveling
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Memory System (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Radiation-Therapy Devices (AREA)
- Memory System Of A Hierarchy Structure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/281,670 US6973531B1 (en) | 2002-10-28 | 2002-10-28 | Tracking the most frequently erased blocks in non-volatile memory systems |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE387714T1 true ATE387714T1 (de) | 2008-03-15 |
Family
ID=32228770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03752244T ATE387714T1 (de) | 2002-10-28 | 2003-09-10 | Verfolgen der am häufigsten gelöschten blöcke eines nichtflüchtigen speichersystems |
Country Status (10)
Country | Link |
---|---|
US (1) | US6973531B1 (de) |
EP (1) | EP1559113B1 (de) |
JP (2) | JP2006504221A (de) |
KR (1) | KR20050059314A (de) |
CN (1) | CN1701390A (de) |
AT (1) | ATE387714T1 (de) |
AU (1) | AU2003270545A1 (de) |
DE (1) | DE60319407T2 (de) |
TW (1) | TWI267866B (de) |
WO (1) | WO2004040585A1 (de) |
Families Citing this family (90)
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US6732221B2 (en) * | 2001-06-01 | 2004-05-04 | M-Systems Flash Disk Pioneers Ltd | Wear leveling of static areas in flash memory |
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2002
- 2002-10-28 US US10/281,670 patent/US6973531B1/en not_active Expired - Lifetime
-
2003
- 2003-09-10 DE DE60319407T patent/DE60319407T2/de not_active Expired - Fee Related
- 2003-09-10 CN CNA038247844A patent/CN1701390A/zh active Pending
- 2003-09-10 AU AU2003270545A patent/AU2003270545A1/en not_active Abandoned
- 2003-09-10 KR KR1020057007323A patent/KR20050059314A/ko not_active Application Discontinuation
- 2003-09-10 EP EP03752244A patent/EP1559113B1/de not_active Expired - Lifetime
- 2003-09-10 AT AT03752244T patent/ATE387714T1/de not_active IP Right Cessation
- 2003-09-10 JP JP2004548320A patent/JP2006504221A/ja active Pending
- 2003-09-10 WO PCT/US2003/028502 patent/WO2004040585A1/en active IP Right Grant
- 2003-09-18 TW TW092125804A patent/TWI267866B/zh not_active IP Right Cessation
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2009
- 2009-09-02 JP JP2009202432A patent/JP2010015591A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2004040585A1 (en) | 2004-05-13 |
EP1559113B1 (de) | 2008-02-27 |
TW200418038A (en) | 2004-09-16 |
US6973531B1 (en) | 2005-12-06 |
JP2010015591A (ja) | 2010-01-21 |
AU2003270545A1 (en) | 2004-05-25 |
EP1559113A1 (de) | 2005-08-03 |
JP2006504221A (ja) | 2006-02-02 |
DE60319407D1 (de) | 2008-04-10 |
TWI267866B (en) | 2006-12-01 |
DE60319407T2 (de) | 2009-03-19 |
CN1701390A (zh) | 2005-11-23 |
KR20050059314A (ko) | 2005-06-17 |
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