CN1826559A - 用于监视和控制在沉浸光刻系统中成像的方法和设备 - Google Patents

用于监视和控制在沉浸光刻系统中成像的方法和设备 Download PDF

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Publication number
CN1826559A
CN1826559A CNA2004800208644A CN200480020864A CN1826559A CN 1826559 A CN1826559 A CN 1826559A CN A2004800208644 A CNA2004800208644 A CN A2004800208644A CN 200480020864 A CN200480020864 A CN 200480020864A CN 1826559 A CN1826559 A CN 1826559A
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CN
China
Prior art keywords
wafer
immersion
laser beam
volume
exposing patterns
Prior art date
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Pending
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CNA2004800208644A
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English (en)
Chinese (zh)
Inventor
H·J·莱文森
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GlobalFoundries Inc
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Advanced Micro Devices Inc
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Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1826559A publication Critical patent/CN1826559A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
CNA2004800208644A 2003-08-11 2004-07-23 用于监视和控制在沉浸光刻系统中成像的方法和设备 Pending CN1826559A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/638,927 US7061578B2 (en) 2003-08-11 2003-08-11 Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US10/638,927 2003-08-11

Publications (1)

Publication Number Publication Date
CN1826559A true CN1826559A (zh) 2006-08-30

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Application Number Title Priority Date Filing Date
CNA2004800208644A Pending CN1826559A (zh) 2003-08-11 2004-07-23 用于监视和控制在沉浸光刻系统中成像的方法和设备

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Country Link
US (1) US7061578B2 (enExample)
EP (1) EP1654593B1 (enExample)
JP (1) JP2007502539A (enExample)
KR (1) KR101152366B1 (enExample)
CN (1) CN1826559A (enExample)
DE (1) DE602004027261D1 (enExample)
TW (1) TWI359470B (enExample)
WO (1) WO2005017625A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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CN1637608B (zh) * 2003-06-11 2011-03-16 Asml荷兰有限公司 光刻装置和器件制造方法
CN103885301A (zh) * 2014-03-21 2014-06-25 浙江大学 浸没式光刻机中浸液传送系统的控制时序的模型匹配方法

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KR20060058713A (ko) 2006-05-30
TW200511470A (en) 2005-03-16
DE602004027261D1 (de) 2010-07-01
TWI359470B (en) 2012-03-01
EP1654593A2 (en) 2006-05-10
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US7061578B2 (en) 2006-06-13

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