CN1826559A - Method and apparatus for monitoring and controlling imaging in immersion lithography systems - Google Patents
Method and apparatus for monitoring and controlling imaging in immersion lithography systems Download PDFInfo
- Publication number
- CN1826559A CN1826559A CNA2004800208644A CN200480020864A CN1826559A CN 1826559 A CN1826559 A CN 1826559A CN A2004800208644 A CNA2004800208644 A CN A2004800208644A CN 200480020864 A CN200480020864 A CN 200480020864A CN 1826559 A CN1826559 A CN 1826559A
- Authority
- CN
- China
- Prior art keywords
- wafer
- immersion
- impurity
- laser beam
- immersion media
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000671 immersion lithography Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000003384 imaging method Methods 0.000 title claims description 22
- 238000012544 monitoring process Methods 0.000 title abstract description 6
- 238000007654 immersion Methods 0.000 claims abstract description 66
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims description 48
- 238000001514 detection method Methods 0.000 claims description 4
- 230000009471 action Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MARDFMMXBWIRTK-UHFFFAOYSA-N [F].[Ar] Chemical compound [F].[Ar] MARDFMMXBWIRTK-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 150000002170 ethers Polymers 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000000266 injurious effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Abstract
A method of monitoring an immersion lithography system (10) in which a wafer (12) can be immersed in a liquid immersion medium (22) for exposure by an exposure pattern. The method detects the presence of a foreign body in the immersion medium to thereby determine if the immersion medium in a state that is acceptable for exposing the wafer with the exposure pattern. Also disclosed is a monitoring and control system (26) for an immersion lithography system.
Description
Technical field
The present invention relates generally to the field that integrated circuit is made, more particularly, relate to and be used for monitoring and/or control wafer imaging method and equipment by immersion lithography (immersion lithography).
Background technology
The formation of multiple integrated circuit (IC) structure on the wafer often relies on photoetching process, and it is also sometimes referred to as photoetch method (photolithography).For example, by making luminous energy, can form pattern from the PR layer through having the mask (mask) (or reticle mask (reticle)) that required pattern is imaged onto the layout of photoresistance (PR) layer.As a result, pattern is passed to the PR layer.Fully exposed and in development cycle (development cycle) zone later at PR, the PR material can become soluble, it can be removed, so that optionally to exposing in lower floor (underlying layer) (for example semiconductor layer, metal level or metal-containing layer (metal containinglayer), insulation course etc.).The part PR layer that is not exposed to the luminous energy of threshold values quantity will not be removed, and as protection lower floor.Then, the part that lower floor is exposed can be etched (for example, Wet-type etching by using chemistry or dry reactive ion (dry reactive ionetch) are (RIE)), makes the pattern that forms from the PR layer be passed to lower floor.Optionally, the PR layer can be used to block dopant and inject the shielded part of lower floor, or is used for stoping the reaction of the protected part of (retard) lower floor.After this, the remainder of PR layer can be removed.
In the IC manufacturing technology, there is a kind of general trend, that is, multiple structure is arranged employed density increases.As a result, there are the corresponding needs that increase resolution (resolution) ability of etching system.For traditional optical lithography, a promising option is the photoetching technique of new generation that is called as immersion lithography.In immersion lithography, to be placed in the liquid medium by the wafer of imaging by etching system, the light transmission that has pattern is through liquid medium.Immersion media (immersion medium) replaces being present in traditionally the last lens of traditional dry lithography imaging system and the clearance between the wafer.
But, the trial of enforcement immersion lithography has suffered from a lot of challenges.For example, the impurity (or a plurality of impurity) that is present in the immersion media can produce adverse influence to the quality that incides the exposing patterns on the wafer.
Therefore, have this demand in this technology, that is, improved immersion lithography systems and use immersion lithography systems are controlled to the correlation technique of picture.
Summary of the invention
According to an aspect of the present invention, the present invention relates to the method for monitoring of immersion lithography systems.This method can comprise the wafer immersion liquid immersion medium that will be exposed; The volume of the immersion media that the guided laser bundle is configured to pass by exposing patterns; And whether the part that determine to surpass the laser beam of reservation threshold become and disperse, and shows that thus impurity exists in the volume that is passed, and immersion media is in and can't accepts to use the exposing patterns state of wafer that exposes.
According to another aspect of the present invention, the present invention relates to be used for the supervision and the control system of immersion lithography systems.This immersion lithography systems can comprise for example cavity and imaging system, and cavity is used to receive the wafer that will be exposed, and wafer is immersed in the immersion media, and imaging system is used for exposing patterns guiding wafer and passes through immersion media.Monitor and control system comprises the immersion media watchdog subsystem that it comprises the laser instrument of the volume that is used for the immersion media that the guided laser bundle is configured to pass by exposing patterns; And detector module, it is used for after laser beam is left the volume that is passed it being received, and is used for output signal, and this signal comprises the instructional information that has or do not exist impurity in the immersion media; And controller, this controller receives and analyzes signal, can accept to use the exposing patterns state of wafer that exposes to determine whether immersion media is in.
Description of drawings
With reference to following description and accompanying drawing, these features of the present invention and other features will be conspicuous, wherein:
Fig. 1 is that example integrated circuit is handled the schematic block diagram of arranging; And
Fig. 2 is used for example integrated circuit to handle the immersion media supervision of layout and the schematic block diagram of Control Component.
Embodiment
In the detailed below description, some corresponding assemblies are endowed identical Reference numeral, and no matter whether they are illustrated in different embodiments of the invention.For the present invention will be described with simple and clear mode with clear, accompanying drawing can be in proportion, and some feature can be illustrated with schematic form.
The description here is presented with the example content that making has the wafer of integrated circuit formed thereon (IC).Example ICs comprises by thousands of or millions of general purpose microprocessors that transistor, flash array or any other special circuit are made.But, those skilled in the art can understand, and method and apparatus described herein also can be applied to any article of utilizing photoetching to make, for example in the making of micromachine, magnetic head of disc drive, genetic chip, microelectromechanical systems (MEMS) etc.
Equipment described herein and method can offer the real-time detection of the key parameter that is used for immersion lithography.Just, impurity (or a plurality of impurity) exists or does not exist and can access supervision, to determine whether condition is favourable for the exposure wafer.For example, impurity can comprise the particulate that for example is suspended in the immersion media 24.Example particles is including, but not limited to dust, pollutant, withered and fallen photoresistance piece etc.Impurity can also comprise bubble, for example is absorbed in air bubble or other gas foams of immersion media 24.Impurity can also be the particulate that has bubble adhered thereto.Even very little impurity also can disturb immersion lithography process.Therefore, checkout equipment described herein can be configured to detect to the impurity of big approximate number micron-scale having about 50nm in the immersion media.
With reference to figure 1, it shows the exemplary IC that comprises immersion lithography systems 10 and handles the schematic block diagram of arranging, immersion lithography systems 10 is used for pattern is imaged onto the zone of wafer 12 or wafer 12.For example, system 10 can be that substep repeats (step-and-repeat) exposure system or substep scanning (step-and-scan) exposure system, but is not limited to these example system.System 10 can comprise the light source 14 that is used for luminous energy 16 guiding masks 18 (being called as reticle mask sometimes).Luminous energy 16 can have for example deep ultraviolet (DUV) wavelength (for example, approximately 248nm or approximately 193nm) or vacuum ultraviolet (VUV) wavelength (for example, about 157nm).
Mask 18 optionally stops luminous energy 16, and the feasible energy pattern 16 ' that is limited by mask 18 is transmitted to wafer 12.For example the imaging subsystems 20 of substep device (stepper) assembly or scanner component continues a series of desired positions on energy pattern 16 ' the guiding wafer 12 that transmits by mask 18.Imaging subsystems 20 can comprise a series of lens and/or catoptron, is used for luminous energy 16 ' is adjusted, and its form guiding wafer 12 with imaging (or exposure) energy pattern 22.
Imaging pattern 22 (or exposing patterns) by imaging subsystems 20 transmission by having the immersion fluid or the immersion media 24 of high relatively refractive index (for example, greater than 1 refractive index).Immersion media 24 can be a liquid.In an example, the deionized water of purification (purified de-ionizedwater) can combine and use with 193nm light source 14 (for example, argon fluorine (ArF) laser instrument).In another example, poly-fluorinated ether (polyfluoroether) can combine with 157nm light source 14 and use.
In addition, with reference to figure 2, shown in it is to be used for exemplary IC to handle the immersion media supervision of layout 10 and the schematic block diagram of Control Component 26.As to understand by those of ordinary skills, the existence of impurity 28 can produce injurious effects to the imaging pattern 22 of exporting and inciding on the wafer 12 by imaging subsystems 20 in immersion media 24.For example, the existence of one or more impurity 28 can cause being fabricated on the defective in the integrated circuit on the wafer 12.
Be not limited by theory, the reason that impurity 28 exists can be many-sided.For example, the turbulent flow (turbulence) in the immersion media 24 may cause bubble to form and/or be immersed in the immersion media 24.A source of turbulent flow may be that wafer 12 can be mounted thereto and the motion of the platform (not shown) that moves with respect to imaging subsystems 20.For example, wafer 12 can be exposed, and is moved about 30mm then, arrives new position and is stopped, and is used for exposure for the second time etc.Wafer motion rates can be about 250mm/ second to about 500mm/ second.This motion may produce turbulent flow or other variations that may cause impurity to exist to the character of immersion media 24.In addition, can estimate that immersion media 24 may on purpose be placed motion (for example, in the flow pattern on wafer 12 (flow pattern)) or stand the pressure of water.Between exposure period, in photoresistance, may produce gas.These gases can dissolve in immersion fluid, finally cause bubble to form.Can also estimate that impurity 28 may be carried on the wafer and be brought in the immersion media 24, and impurity 28 leaves wafer 12 and begin " floating " in immersion media 24.
Therefore people wish, for the existence of impurity 28 immersion media 24 is monitored, and control immersion media 24, the existence of impurity 28 is detected.Therefore, assembly 26 can comprise that for example programming is used to control the controller 30 that IC handles the computing machine of layout 10, and immersion media control subsystem 32.Controller 10 can receiving inputted signal or from the signal of immersion media watchdog subsystem 34.
As indicated, imaging subsystems 20 can comprise output lens 36 or other last optical textures.At least a portion that comprises the imaging subsystems 20 of lens 36 can enter the cavity 38 that comprises immersion media 24 and wafer 12.Lens 36 will contact closely with immersion media 24, make to carry out projection by the imaging pattern 22 process immersion media 24 of lens 36 outputs, and incide at least a portion that is arranged or is immersed in the wafer 12 in the immersion media 24.
The volume of the immersion media 24 in the exposure fields of imaging pattern 22 (for example, imaging pattern 22 passes through the volume of a part of the immersion media 24 of process) will be called as the volume (traversed volume) 40 that passes through here.In one embodiment, lens 36 can be disposed in the about 1mm in wafer 12 tops.But, the distance between lens 36 and the wafer 12 can arrange 10 according to illumination wavelengths, immersion media 24, particular processing, the device of on wafer 12, being made, employed specific photoresistance etc. and different.In some was arranged, the volume that passes through can be that about 25mm is wide and 10mm long, though these parameters may alter a great deal.
If light beam 46 does not run into impurity 28, light beam 46 will be basically directly by immersion media 24.As a result, light beam 46 will incide on the detector module 44, be in the foreseeable position and/or have foreseeable intensity.Can produce and export the position that to represent light beam 46 and/or the signal of intensity by detector module 44.Signal by detector module 44 outputs can controlled device 30 receive.In one embodiment, controller 30 is programmed, and is used to analyze the signal that is received from detector module 44.If controller 30 determines that light beam 46 does not run into impurity 28, then can reach a conclusion, that is, there is the advantage that wafer 12 is exposed.Therefore, can programme, be used for arranging 10 transmitting control commands, so that exposure wafer 12 to handling to controller 30.
Really run at light beam 46 under the situation of impurity 28, the major part of light beam 46 may be directly by immersion media 24 and incide on the detecting device 44.But, in some cases, incide light beam on the detector module 44 and will be the light beam 46 ' that diminishes (for example, have be different from the desired position and/or have) less than required intensity.
Equally, when impurity 28 existed, the part of light beam 46 may become scattering, to form scattered light part 52.Detector module 44 can be configured to scattered light part 52 and/or the light beam 46 ' that diminishes are detected.On the basis of the detection of scattered light part 52 and/or the light beam 46 ' that diminishes, detector module 44 can be configured to produce the signal that comprises information, and this information shows that impurity 28 has disturbed light beam 46.This information can comprise about the position of the position of detected scattered light part 50 and intensity and/or the light beam 46 ' that diminishes and the data of intensity.
This signal can controlled device 30 receive, and controller 30 is programmed and is used for processing signals then.In an example, controller 30 can be determined whether scattered light part 52 comprises and be lower than threshold values quantity (for example, show impurity 28 exist) or be higher than the threshold values quantity light quantity of (for example, showing that impurity 28 does not exist).In another example, impurity 28 exists or do not exist can be by comparing the information (for example, position and/or intensity level) that relates to light beam 46 that incides on the detector module 44 or the light beam 46 ' that diminishes and be determined with required result.Still in another example, can be used to the existence of impurity 28 or not exist monitor from the combination of the information of scattered light part 52 and/or light beam 46 (or the light beam 46 ' that diminishes).
It should be consistent handling with identification impurity 28 in the volume 40 that passes at least by controller 30, because the condition in the immersion media 24 may be unfavorable for obtaining the gratifying exposure of wafer 12, so can programme to controller 30, be used to postpone the exposure of wafer 12.
As indicated in, multiple beam can be used in a plurality of positions of the volume 40 that passes, and if not all volumes that passes 40, the existence of impurity 28 (or a plurality of impurity) is monitored.Optionally, one or more light beams can be crossed the volume 40 that passes and scan, and are used in a plurality of positions of the volume 40 that passes, and if not all volumes that passes 38, the existence of impurity 28 (or a plurality of impurity) are monitored.In these embodiments, detector module 44 (or a plurality of assembly) can be configured for and be controller 30 generation composite signal or a plurality of signals.
In one embodiment, the measurement of the light by detector module or can be transferred to controller 30 from detector module 44 with the form of input signal or a plurality of input signals from the raw data of watchdog subsystem 34, wherein, the detection of impurity 28 can be determined by watchdog subsystem 34.Controller 30 can be handled input signal, whether is present in any position in the volume 40 that passes to determine impurity 28.
If impurity 28 is not detected, then controller 30 can be given an order to system 10, with exposure wafer 12.But,, then can reach a conclusion if impurity 28 is detected, that is, the condition wafer 12 that is unfavorable for exposing, and controller 30 is programmed, and is used for postponing the exposure wafer.Under latter event (that is, when impurity 28 is detected), controller 30 can be programmed, and is used to carry out one or more special actions.For example, controller 28 can be programmed, and to wait for the preset time section simply, during this period of time, estimates that impurity 28 will shift out from the volume 40 that passes.After the predetermined amount of time, immersion media watchdog subsystem 34 can Be Controlled be used for the existence of impurity 28 is tested once more.In another embodiment, controller 30 is programmed and is used to take corrective action.Example correction actions can comprise to immersion media control subsystem 32 and sends order, and the order that for example is used to reduce or increases immersion media 24 flowing velocities is so that the pressure of increase immersion media 24 (for example, attempt to extrude or dissolved impurity 28) etc.In another embodiment, controller 30 can be programmed, and is used for the adverse environment of alert operator for imaging wafer 12.Alert operator can be intended for this situation, that is, the duplicate measurements of immersion media 24 has disclosed the existence of impurity 28.Still in another example, controller 30 can be programmed, and is used for implementing for example waiting for the preset time section, and taking corrective action more than an aforesaid function.
Though specific embodiments of the present invention has obtained describing in detail, is appreciated that the present invention is not limited correspondingly in this scope, but be included in the project of accompanying Claim and all variations, change and the equivalents in the spirit.
Claims (10)
1. method that monitors immersion lithography systems (10), it comprises:
The wafer that will be exposed (12) is immersed in the liquid immersion medium (24);
The volume of the described immersion media that guided laser bundle (46) is configured to pass by exposing patterns (22); And
Whether the part that determine to surpass the laser beam of reservation threshold becomes is dispersed, and shows that thus impurity exists in the described volume that passes, and described immersion media is in and can't accepts to use the described exposing patterns state of described wafer that exposes.
2. method according to claim 1 also comprises if describedly determine that the scattered portion that shows described laser beam is lower than described reservation threshold, then uses the described exposing patterns described wafer that exposes.
3. according to any one described method of claim 1-2, wherein, describedly to determine to be implemented by analytical information, described information is selected from the position of described scattered intensity, described scattered light and their combination.
4. method according to claim 1 wherein, is describedly determined to be implemented by analytical information, and described information is selected from the described intensity of laser beam that incides on the detection components, the position of inciding the described laser beam on the detection components and their combination.
5. according to any one described method of claim 1-4, wherein, the described whole volume that passes comes under observation, and is used for the described existence of described impurity.
6. method according to claim 5, wherein, multi-laser beam is used to the described existence of described impurity is monitored.
7. method according to claim 5, wherein, at least one laser beam scans by the volume that passes, and is used for the described existence of described impurity is monitored.
8. also comprise the described immersion lithography systems of control according to any one described method of claim 1-7, be in and accept to use the described exposing patterns state of described wafer that exposes, then postpone the described wafer of exposure if be used for described immersion media.
9. a supervision and control system that is used for immersion lithography systems (10), described immersion lithography systems comprises that being used for receiving the wafer (12) that will be exposed also immerses described wafer the cavity (38) of immersion media (24), and be used for exposing patterns (22) is led described wafer also by the imaging subsystems (20) of described immersion media, it comprises:
Immersion media watchdog subsystem (34), it comprises the laser instrument (42) of the volume that is used for the described immersion media that guided laser bundle (46) is configured to pass by described exposing patterns, and detector module (44), it is used for receiving described laser beam after described laser beam is left the described volume that passes, and is used for exporting the signal that comprises the immersion media existence or do not have the instructional information of impurity; And
Controller (30), described controller receives also and analyzes described information, is used for determining whether described immersion media is in can accept to use the described exposing patterns state of described wafer that exposes.
10. supervision according to claim 9 and control system, wherein, if describedly determine that the scattered portion that shows described laser beam is lower than described reservation threshold, then described controller is controlled described immersion lithography systems and is used described exposing patterns with the described wafer that exposes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/638,927 | 2003-08-11 | ||
| US10/638,927 US7061578B2 (en) | 2003-08-11 | 2003-08-11 | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1826559A true CN1826559A (en) | 2006-08-30 |
Family
ID=34135772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800208644A Pending CN1826559A (en) | 2003-08-11 | 2004-07-23 | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7061578B2 (en) |
| EP (1) | EP1654593B1 (en) |
| JP (1) | JP2007502539A (en) |
| KR (1) | KR101152366B1 (en) |
| CN (1) | CN1826559A (en) |
| DE (1) | DE602004027261D1 (en) |
| TW (1) | TWI359470B (en) |
| WO (1) | WO2005017625A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1637608B (en) * | 2003-06-11 | 2011-03-16 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN103885301A (en) * | 2014-03-21 | 2014-06-25 | 浙江大学 | Model matching method for controlled timing sequence of immersion liquid delivery system in immersion lithography machine |
Families Citing this family (127)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7372541B2 (en) * | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN101713932B (en) | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| KR101037057B1 (en) * | 2002-12-10 | 2011-05-26 | 가부시키가이샤 니콘 | Exposure apparatus and method for manufacturing device |
| JP4352874B2 (en) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| US7948604B2 (en) * | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
| WO2004053953A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| WO2004053955A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure system and device producing method |
| KR101101737B1 (en) * | 2002-12-10 | 2012-01-05 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method and method for manufacturing device |
| WO2004057589A1 (en) * | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
| DE10261775A1 (en) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Device for the optical measurement of an imaging system |
| KR20180126102A (en) | 2003-02-26 | 2018-11-26 | 가부시키가이샤 니콘 | Exposure apparatus and method, and method of producing apparatus |
| KR101345474B1 (en) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | Exposure system and device production method |
| DE602004020200D1 (en) * | 2003-04-07 | 2009-05-07 | Nippon Kogaku Kk | EXPOSURE DEVICE AND METHOD FOR PRODUCING A DEVICE |
| KR101177331B1 (en) * | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | Immersion lithography fluid control system |
| WO2004090634A2 (en) * | 2003-04-10 | 2004-10-21 | Nikon Corporation | Environmental system including vaccum scavange for an immersion lithography apparatus |
| CN1771463A (en) * | 2003-04-10 | 2006-05-10 | 株式会社尼康 | Run-off path to collect liquid for an immersion lithography apparatus |
| JP4656057B2 (en) * | 2003-04-10 | 2011-03-23 | 株式会社ニコン | Electro-osmotic element for immersion lithography equipment |
| JP4650413B2 (en) * | 2003-04-10 | 2011-03-16 | 株式会社ニコン | Environmental system including a transfer area for an immersion lithography apparatus |
| JP4837556B2 (en) | 2003-04-11 | 2011-12-14 | 株式会社ニコン | Optical element cleaning method in immersion lithography |
| JP4582089B2 (en) * | 2003-04-11 | 2010-11-17 | 株式会社ニコン | Liquid jet recovery system for immersion lithography |
| EP2613193B1 (en) | 2003-04-11 | 2016-01-13 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
| SG152078A1 (en) | 2003-04-17 | 2009-05-29 | Nikon Corp | Optical arrangement of autofocus elements for use with immersion lithography |
| JP4025683B2 (en) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | Pattern forming method and exposure apparatus |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2004102646A1 (en) * | 2003-05-15 | 2004-11-25 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| TWI474380B (en) * | 2003-05-23 | 2015-02-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| TWI612557B (en) | 2003-05-23 | 2018-01-21 | Nikon Corp | Exposure method and exposure apparatus and component manufacturing method |
| KR101915914B1 (en) * | 2003-05-28 | 2018-11-06 | 가부시키가이샤 니콘 | Exposure method, exposure device, and device manufacturing method |
| TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TW201445617A (en) | 2003-06-13 | 2014-12-01 | 尼康股份有限公司 | Exposure method, substrate stage, exposure apparatus and method for manufacturing device |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| TWI536430B (en) | 2003-06-19 | 2016-06-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
| DE60308161T2 (en) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographic apparatus and method for making an article |
| US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| EP1639391A4 (en) * | 2003-07-01 | 2009-04-29 | Nikon Corp | Using isotopically specified fluids as optical elements |
| EP2853943B1 (en) * | 2003-07-08 | 2016-11-16 | Nikon Corporation | Wafer table for immersion lithography |
| ATE513309T1 (en) * | 2003-07-09 | 2011-07-15 | Nikon Corp | EXPOSURE DEVICE AND METHOD FOR PRODUCING COMPONENTS |
| WO2005006418A1 (en) * | 2003-07-09 | 2005-01-20 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| WO2005006416A1 (en) * | 2003-07-09 | 2005-01-20 | Nikon Corporation | Linking unit, exposure apparatus and method for manufacturing device |
| JP4524669B2 (en) | 2003-07-25 | 2010-08-18 | 株式会社ニコン | Projection optical system inspection method and inspection apparatus |
| US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| CN102323724B (en) | 2003-07-28 | 2014-08-13 | 株式会社尼康 | Liquid immersion exposure apparatus, producing method thereof, exposure apparatus and device producing method |
| EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| US7779781B2 (en) * | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
| US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| EP1670039B1 (en) * | 2003-08-29 | 2014-06-04 | Nikon Corporation | Exposure apparatus and device producing method |
| EP2261740B1 (en) * | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
| EP3223074A1 (en) | 2003-09-03 | 2017-09-27 | Nikon Corporation | Apparatus and method for immersion lithography for recovering fluid |
| WO2005029559A1 (en) * | 2003-09-19 | 2005-03-31 | Nikon Corporation | Exposure apparatus and device producing method |
| KR101739711B1 (en) * | 2003-09-29 | 2017-05-24 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and device manufacturing method |
| EP1672682A4 (en) | 2003-10-08 | 2008-10-15 | Zao Nikon Co Ltd | Substrate transporting apparatus and method, exposure apparatus and method, and device producing method |
| JP2005136364A (en) * | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | Substrate carrying device, exposure device and device manufacturing method |
| ATE509367T1 (en) | 2003-10-08 | 2011-05-15 | Zao Nikon Co Ltd | EXPOSURE APPARATUS, SUBSTRATE SUPPORT METHOD, EXPOSURE METHOD AND METHOD FOR PRODUCING A DEVICE |
| TWI598934B (en) | 2003-10-09 | 2017-09-11 | Nippon Kogaku Kk | Exposure apparatus, exposure method, and device manufacturing method |
| US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7411653B2 (en) * | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
| EP1531362A3 (en) * | 2003-11-13 | 2007-07-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
| JP4295712B2 (en) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー．ブイ． | Lithographic apparatus and apparatus manufacturing method |
| TWI470371B (en) | 2003-12-03 | 2015-01-21 | 尼康股份有限公司 | An exposure apparatus, an exposure method, an element manufacturing method, and an optical component |
| KR101499405B1 (en) | 2003-12-15 | 2015-03-05 | 가부시키가이샤 니콘 | Stage system, exposure apparatus and exposure method |
| US20070081133A1 (en) * | 2004-12-14 | 2007-04-12 | Niikon Corporation | Projection exposure apparatus and stage unit, and exposure method |
| WO2005057635A1 (en) * | 2003-12-15 | 2005-06-23 | Nikon Corporation | Projection exposure apparatus, stage apparatus, and exposure method |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7324274B2 (en) * | 2003-12-24 | 2008-01-29 | Nikon Corporation | Microscope and immersion objective lens |
| DE602005019689D1 (en) * | 2004-01-20 | 2010-04-15 | Zeiss Carl Smt Ag | EXPOSURE DEVICE AND MEASURING DEVICE FOR A PROJECTION SECTOR |
| US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| WO2005076321A1 (en) * | 2004-02-03 | 2005-08-18 | Nikon Corporation | Exposure apparatus and method of producing device |
| US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8023100B2 (en) * | 2004-02-20 | 2011-09-20 | Nikon Corporation | Exposure apparatus, supply method and recovery method, exposure method, and device producing method |
| US8488102B2 (en) * | 2004-03-18 | 2013-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| KR20180042456A (en) | 2004-03-25 | 2018-04-25 | 가부시키가이샤 니콘 | Exposure apparatus and method for manufacturing device |
| US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005111722A2 (en) * | 2004-05-04 | 2005-11-24 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN101833247B (en) | 2004-06-04 | 2013-11-06 | 卡尔蔡司Smt有限责任公司 | Measuring system for the optical measurement of projecting object lens of micro-lithography projection exposure system |
| CN105467775B (en) | 2004-06-09 | 2018-04-10 | 株式会社尼康 | Exposure device and manufacturing method |
| JP2005353762A (en) * | 2004-06-09 | 2005-12-22 | Matsushita Electric Ind Co Ltd | Semiconductor manufacturing device and pattern forming method |
| US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4894515B2 (en) | 2004-07-12 | 2012-03-14 | 株式会社ニコン | Exposure apparatus, device manufacturing method, and liquid detection method |
| EP3267257B1 (en) * | 2004-08-03 | 2019-02-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| WO2006019124A1 (en) * | 2004-08-18 | 2006-02-23 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20060044533A1 (en) * | 2004-08-27 | 2006-03-02 | Asmlholding N.V. | System and method for reducing disturbances caused by movement in an immersion lithography system |
| DE102004047677B4 (en) * | 2004-09-30 | 2007-06-21 | Advanced Micro Devices, Inc., Sunnyvale | Method and system for contamination detection and monitoring in a lithographic exposure apparatus and method for operating the same under controlled atmospheric conditions |
| JP2006120674A (en) * | 2004-10-19 | 2006-05-11 | Canon Inc | Aligner and exposure method, and method for manufacturing device |
| US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1681597B1 (en) | 2005-01-14 | 2010-03-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG124351A1 (en) * | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US8692973B2 (en) * | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
| US20090262316A1 (en) * | 2005-01-31 | 2009-10-22 | Nikon Corporation | Exposure apparatus and method for producing device |
| US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
| WO2006106832A1 (en) * | 2005-03-30 | 2006-10-12 | Nikon Corporation | Method for determining exposure conditions, exposure method, exposure device, and apparatus for producing device |
| USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| US20060232753A1 (en) * | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
| US20070004182A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and system for inhibiting immersion lithography defect formation |
| US7357768B2 (en) * | 2005-09-22 | 2008-04-15 | William Marshall | Recliner exerciser |
| US7773195B2 (en) * | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
| US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| US20070124987A1 (en) * | 2005-12-05 | 2007-06-07 | Brown Jeffrey K | Electronic pest control apparatus |
| KR100768849B1 (en) * | 2005-12-06 | 2007-10-22 | 엘지전자 주식회사 | Power supply apparatus and method for line conection type fuel cell system |
| US7649611B2 (en) * | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE102006021797A1 (en) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optical imaging device with thermal damping |
| US20070296937A1 (en) * | 2006-06-26 | 2007-12-27 | International Business Machines Corporation | Illumination light in immersion lithography stepper for particle or bubble detection |
| US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
| US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
| US20080198347A1 (en) * | 2007-02-16 | 2008-08-21 | Canon Kabushiki Kaisha | Immersion exposure apparatus and method of manufacturing device |
| US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
| TWI389551B (en) * | 2007-08-09 | 2013-03-11 | Mstar Semiconductor Inc | Gamma correction apparatus |
| NL1036009A1 (en) * | 2007-10-05 | 2009-04-07 | Asml Netherlands Bv | An Immersion Lithography Apparatus. |
| KR101448152B1 (en) * | 2008-03-26 | 2014-10-07 | 삼성전자주식회사 | Distance measuring sensor having vertical photogate and three dimensional color image sensor having the same |
| US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
| MX2012007581A (en) * | 2009-12-28 | 2012-07-30 | Pioneer Hi Bred Int | Sorghum fertility restorer genotypes and methods of marker-assisted selection. |
| EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
| JP5457384B2 (en) * | 2010-05-21 | 2014-04-02 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| JP5797582B2 (en) * | 2012-02-24 | 2015-10-21 | 株式会社アドテックエンジニアリング | Exposure drawing apparatus, program, and exposure drawing method |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| IL66127A (en) | 1982-06-24 | 1987-11-30 | Israel State | Method and apparatus for measuring the index of refraction of fluids |
| US4670637A (en) | 1985-02-11 | 1987-06-02 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for transmitting a laser signal through fog |
| JPS62266447A (en) * | 1986-05-14 | 1987-11-19 | Eisai Co Ltd | Method and apparatus for detecting foreign matter in liquid within container |
| US5151752A (en) | 1988-06-16 | 1992-09-29 | Asahi Kogaku Kogyo K.K. | Method of measuring refractive indices of lens and sample liquid |
| JP2899360B2 (en) * | 1990-05-21 | 1999-06-02 | 興和株式会社 | Method and apparatus for measuring particles in fluid |
| JPH06124873A (en) * | 1992-10-09 | 1994-05-06 | Canon Inc | Liquid-soaking type projection exposure apparatus |
| JP2753930B2 (en) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | Immersion type projection exposure equipment |
| US5422714A (en) | 1993-06-07 | 1995-06-06 | Corning Incorporated | Device for comparing the refractive indices of an optical immersion liquid and a reference glass |
| GB9324926D0 (en) | 1993-12-04 | 1994-01-26 | Renishaw Plc | Combined interferometer and refractometer |
| KR100542414B1 (en) * | 1996-03-27 | 2006-05-10 | 가부시키가이샤 니콘 | Exposure Equipment and Air Conditioning Equipment |
| JP2982720B2 (en) * | 1996-04-26 | 1999-11-29 | 日本電気株式会社 | Particle monitor device and dust-free process device equipped with the same |
| US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| US6133995A (en) * | 1997-05-09 | 2000-10-17 | Sysmex Corporation | Particle measuring apparatus |
| US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| US6241827B1 (en) * | 1998-02-17 | 2001-06-05 | Tokyo Electron Limited | Method for cleaning a workpiece |
| JP3833810B2 (en) * | 1998-03-04 | 2006-10-18 | 株式会社日立製作所 | Semiconductor manufacturing method, plasma processing method and apparatus |
| DE10025789A1 (en) | 2000-05-19 | 2001-11-22 | Schmidt & Haensch Gmbh & Co Op | Refractometer for measuring refractive index of liquid, solid or gaseous materials, has optical element arranged in reflected radiation beam path between measuring surface and receiver, to split beam into color spectrum |
| WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
| JP4352874B2 (en) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
| JP2005277363A (en) * | 2003-05-23 | 2005-10-06 | Nikon Corp | Exposure device and device manufacturing method |
| US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1489461A1 (en) | 2003-06-11 | 2004-12-22 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1639391A4 (en) | 2003-07-01 | 2009-04-29 | Nikon Corp | Using isotopically specified fluids as optical elements |
| US7006209B2 (en) * | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
-
2003
- 2003-08-11 US US10/638,927 patent/US7061578B2/en not_active Expired - Lifetime
-
2004
- 2004-07-23 JP JP2006523208A patent/JP2007502539A/en active Pending
- 2004-07-23 CN CNA2004800208644A patent/CN1826559A/en active Pending
- 2004-07-23 KR KR1020067002882A patent/KR101152366B1/en not_active IP Right Cessation
- 2004-07-23 EP EP04757262A patent/EP1654593B1/en not_active Expired - Fee Related
- 2004-07-23 DE DE602004027261T patent/DE602004027261D1/en active Active
- 2004-07-23 WO PCT/US2004/023875 patent/WO2005017625A2/en active Application Filing
- 2004-07-23 TW TW093122003A patent/TWI359470B/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1637608B (en) * | 2003-06-11 | 2011-03-16 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN103885301A (en) * | 2014-03-21 | 2014-06-25 | 浙江大学 | Model matching method for controlled timing sequence of immersion liquid delivery system in immersion lithography machine |
| CN103885301B (en) * | 2014-03-21 | 2015-09-16 | 浙江大学 | The model matching method of the Control timing sequence of immersion liquid transfer system in immersed photoetching machine |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200511470A (en) | 2005-03-16 |
| JP2007502539A (en) | 2007-02-08 |
| DE602004027261D1 (en) | 2010-07-01 |
| TWI359470B (en) | 2012-03-01 |
| EP1654593A2 (en) | 2006-05-10 |
| KR101152366B1 (en) | 2012-06-05 |
| WO2005017625A2 (en) | 2005-02-24 |
| KR20060058713A (en) | 2006-05-30 |
| US7061578B2 (en) | 2006-06-13 |
| WO2005017625A3 (en) | 2005-09-01 |
| EP1654593B1 (en) | 2010-05-19 |
| US20050037269A1 (en) | 2005-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1826559A (en) | Method and apparatus for monitoring and controlling imaging in immersion lithography systems | |
| EP1652008B1 (en) | Method for monitoring an immersion lithography system | |
| KR101452852B1 (en) | Inspection method and apparatus | |
| TWI392974B (en) | Methods relating to immersion lithography and an immersion lithographic apparatus | |
| JP4672704B2 (en) | Method of measuring substrate overlay error, substrate manufacturing method, and inspection apparatus | |
| US9529278B2 (en) | Inspection apparatus to detect a target located within a pattern for lithography | |
| JP2007333729A (en) | Inspection method and device using it | |
| KR102101350B1 (en) | particle counter and immersion scanner used the same | |
| NL1036856A1 (en) | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. | |
| TWI402630B (en) | Method and system for determining a suppression factor of a suppression system and a lithographic apparatus | |
| KR101330116B1 (en) | Method of determining a characteristic | |
| CN110520800B (en) | Method for performing performance test on fluid handling structure | |
| JP2007221015A (en) | Liquid-immersing exposure apparatus | |
| US20070296937A1 (en) | Illumination light in immersion lithography stepper for particle or bubble detection | |
| KR20070052054A (en) | Lithography apparatus for semiconductor | |
| KR100791396B1 (en) | Apparatus for detecting hazes of photomask surface using real-time background-free detection of nanoscale particles and method for detecting thereof | |
| WO2021099047A1 (en) | A method of obtaining performance information about a lithography process | |
| Zabar et al. | Aera193i: aerial imaging mask inspection for immersion lithography | |
| KR20020036152A (en) | Wafer Stage Holder Examination Device of Semiconductor Lithography Apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: GLOBALFOUNDRIES INC. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20100730 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA STATE, USA TO: CAYMAN ISLANDS GRAND CAYMAN ISLAND |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20100730 Address after: Grand Cayman, Cayman Islands Applicant after: Globalfoundries Semiconductor Inc. Address before: American California Applicant before: Advanced Micro Devices Inc. |
|
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20060830 |