JP2007502539A - 浸漬リソグラフィシステムの監視・制御方法及び装置 - Google Patents

浸漬リソグラフィシステムの監視・制御方法及び装置 Download PDF

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Publication number
JP2007502539A
JP2007502539A JP2006523208A JP2006523208A JP2007502539A JP 2007502539 A JP2007502539 A JP 2007502539A JP 2006523208 A JP2006523208 A JP 2006523208A JP 2006523208 A JP2006523208 A JP 2006523208A JP 2007502539 A JP2007502539 A JP 2007502539A
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Japan
Prior art keywords
wafer
laser beam
immersion medium
immersion
monitoring
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JP2006523208A
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English (en)
Japanese (ja)
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JP2007502539A5 (enExample
Inventor
ジェイ． レビンソン ハリー
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication of JP2007502539A publication Critical patent/JP2007502539A/ja
Publication of JP2007502539A5 publication Critical patent/JP2007502539A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP2006523208A 2003-08-11 2004-07-23 浸漬リソグラフィシステムの監視・制御方法及び装置 Pending JP2007502539A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/638,927 US7061578B2 (en) 2003-08-11 2003-08-11 Method and apparatus for monitoring and controlling imaging in immersion lithography systems
PCT/US2004/023875 WO2005017625A2 (en) 2003-08-11 2004-07-23 Method and apparatus for monitoring and controlling imaging in immersion lithography systems

Publications (2)

Publication Number Publication Date
JP2007502539A true JP2007502539A (ja) 2007-02-08
JP2007502539A5 JP2007502539A5 (enExample) 2009-06-18

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JP2006523208A Pending JP2007502539A (ja) 2003-08-11 2004-07-23 浸漬リソグラフィシステムの監視・制御方法及び装置

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Country Link
US (1) US7061578B2 (enExample)
EP (1) EP1654593B1 (enExample)
JP (1) JP2007502539A (enExample)
KR (1) KR101152366B1 (enExample)
CN (1) CN1826559A (enExample)
DE (1) DE602004027261D1 (enExample)
TW (1) TWI359470B (enExample)
WO (1) WO2005017625A2 (enExample)

Cited By (2)

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JP2012009812A (ja) * 2010-05-21 2012-01-12 Tokyo Electron Ltd 液処理装置
JP2012151513A (ja) * 2003-08-29 2012-08-09 Asml Netherlands Bv リソグラフィック装置及びデバイス製造方法

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CN1826559A (zh) 2006-08-30
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