JP5155591B2 - 方法、インスペクションデバイス、および、リソグラフィ装置 - Google Patents
方法、インスペクションデバイス、および、リソグラフィ装置 Download PDFInfo
- Publication number
- JP5155591B2 JP5155591B2 JP2007113702A JP2007113702A JP5155591B2 JP 5155591 B2 JP5155591 B2 JP 5155591B2 JP 2007113702 A JP2007113702 A JP 2007113702A JP 2007113702 A JP2007113702 A JP 2007113702A JP 5155591 B2 JP5155591 B2 JP 5155591B2
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- Japan
- Prior art keywords
- patterning device
- speckle pattern
- pattern
- radiation beam
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
- G03F1/86—Inspecting by charged particle beam [CPB]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
上述の使用モードの組合せおよび/または変形、あるいは、全く異なる使用モードを使用することもできる。
Claims (14)
- パターン化構造を備えるパターニングデバイスに汚染粒子があるか否かを検査するための方法であって、
放射ビームを前記パターニングデバイスに誘導すること、および、
前記パターニングデバイス上の汚染粒子を表すものとして前記パターニングデバイスによる散乱放射を検査すること、
を含み、
前記検査することが、ディテクタによって前記散乱放射からスペックルパターンを検出することと、汚染粒子の存在を検出するように、検出されたスペックルパターンと粒子フリーのパターン化表面に関連付けられた所定のスペックルパターンとの差によって与えられるスペックル差パターンを生成することと、前記検出されたスペックルパターンと前記所定のスペックルパターンとの強度差から汚染粒子のサイズを推定することとを含む方法。 - 前記ディテクタが、1〜9マイクロメートルの前記パターニングデバイスにつき1画素の分解能を有する、請求項1に記載の方法。
- 前記ディテクタが、CCDまたは画像記録システムである、請求項1または2に記載の方法。
- 前記放射ビームが、かすめ入射レーザビームとして提供される、請求項1ないし3のいずれか一項に記載の方法。
- 前記放射ビームが、可視または近可視光である、請求項1ないし4のいずれか一項に記載の方法。
- 前記放射ビームが、極端紫外光である、請求項1ないし4のいずれか一項に記載の方法。
- パターン化構造を備えるパターニングデバイスに汚染粒子があるか否かを検査するためのインスペクションデバイスであって、
放射ビームを前記パターニングデバイスに誘導する放射システムと、
前記パターニングデバイスによる散乱放射からスペックルパターンを検出するディテクタと、
を備え、
汚染粒子の存在を検出するように、検出されたスペックルパターンと粒子フリーのパターン化表面に関連付けられた所定のスペックルパターンとの差によって与えられるスペックル差パターンを生成し、前記検出されたスペックルパターンと前記所定のスペックルパターンとの強度差から汚染粒子のサイズを推定するように構成される、インスペクションデバイス。 - 前記ディテクタが、1〜9マイクロメートルの前記パターニングデバイスにつき1画素の分解能を有する、請求項7に記載のインスペクションデバイス。
- 前記ディテクタが、CCDまたは画像記録システムである、請求項7または8に記載のインスペクションデバイス。
- 前記放射ビームが、かすめ入射レーザビームとして提供される、請求項7ないし9のいずれか一項に記載のインスペクションデバイス。
- 前記放射ビームが、可視または近可視光である、請求項7ないし10のいずれか一項に記載のインスペクションデバイス。
- 前記放射ビームが、極端紫外光である、請求項7ないし10のいずれか一項に記載のインスペクションデバイス。
- パターニングデバイスを支持する支持体であって、前記パターニングデバイスが、パターン化構造を備え、パターン付き放射ビームを形成可能である、支持体と、
前記パターン付き放射ビームを、基板のターゲット部分上に投影する投影システムと、
前記パターニングデバイスを検査するインスペクションデバイスと、
を含み、
前記インスペクションデバイスが、
放射ビームを前記パターニングデバイスに誘導する放射システムと、
前記パターニングデバイスによる散乱放射からスペックルパターンを検出するディテクタと、を備え、
汚染粒子の存在を検出するように、検出されたスペックルパターンと粒子フリーのパターン化表面に関連付けられた所定のスペックルパターンとの差によって与えられるスペックル差パターンを生成し、前記検出されたスペックルパターンと前記所定のスペックルパターンとの強度差から汚染粒子のサイズを推定するように構成される、リソグラフィ装置。 - 前記ディテクタが、1〜9マイクロメートルの前記パターニングデバイスにつき1画素の分解能を有する、請求項13に記載のリソグラフィ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/418,454 | 2006-05-05 | ||
US11/418,454 US7433033B2 (en) | 2006-05-05 | 2006-05-05 | Inspection method and apparatus using same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007333729A JP2007333729A (ja) | 2007-12-27 |
JP5155591B2 true JP5155591B2 (ja) | 2013-03-06 |
Family
ID=38660897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007113702A Expired - Fee Related JP5155591B2 (ja) | 2006-05-05 | 2007-04-24 | 方法、インスペクションデバイス、および、リソグラフィ装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7433033B2 (ja) |
JP (1) | JP5155591B2 (ja) |
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NL2002884A1 (nl) * | 2008-06-09 | 2009-12-10 | Asml Holding Nv | Particle detection on patterning devices with arbitrary patterns. |
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NL2004539A (en) | 2009-06-22 | 2010-12-23 | Asml Netherlands Bv | Object inspection systems and methods. |
JP5600166B2 (ja) * | 2009-08-04 | 2014-10-01 | エーエスエムエル ネザーランズ ビー.ブイ. | 対象検査システムおよび方法 |
JP2013518261A (ja) * | 2010-01-27 | 2013-05-20 | エーエスエムエル ホールディング エヌ.ブイ. | 空間フィルタを有するホログラフィックマスク検査システム |
KR20110110578A (ko) * | 2010-04-01 | 2011-10-07 | 삼성전자주식회사 | 극자외선 마스크의 위상 거칠기 측정 방법 및 이에 이용되는 장치 |
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-
2006
- 2006-05-05 US US11/418,454 patent/US7433033B2/en not_active Expired - Fee Related
-
2007
- 2007-04-24 JP JP2007113702A patent/JP5155591B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7433033B2 (en) | 2008-10-07 |
JP2007333729A (ja) | 2007-12-27 |
US20070258086A1 (en) | 2007-11-08 |
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