CN1721145A - 多区末端受动器组件 - Google Patents
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- 239000012636 effector Substances 0.000 title claims abstract description 161
- 210000000707 wrist Anatomy 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000011248 coating agent Substances 0.000 claims abstract description 28
- 238000000576 coating method Methods 0.000 claims abstract description 28
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 46
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 238000012546 transfer Methods 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 239000004411 aluminium Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004918 carbon fiber reinforced polymer Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims 1
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 238000007665 sagging Methods 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 238000004534 enameling Methods 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000011156 metal matrix composite Substances 0.000 description 4
- 229910001363 AlBeMet Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910000883 Ti6Al4V Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- B25J15/00—Gripping heads and other end effectors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10S294/00—Handling: hand and hoist-line implements
- Y10S294/902—Gripping element
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
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Abstract
本发明提供使用于基板机器人的一末端受动器的若干具体实施例。在一具体实施例中该末端受动器组件包含一腕部、以及连结至该腕部的具有间隔分离关系的一第一和一第二末端受动器。该第一末端受动器含有连结至该腕部的一基座以及一末梢其连结至位在该腕部相反侧的该基座上。该基座及该末梢可由相同或不同材料制成。该第一及第二末端受动器可具有不同共振频率来减少振动。或者,对该第一和第二受动器施加一低放射率涂层。该低放射率涂层可还具有复数个压力释放槽,用以减少或避免在该涂层与该在下面的末端受动器因为不同的热膨胀而使涂层剥落。
Description
技术领域
一般而言,本发明的具体实施例有关用以在一处理系统中处理大面积基板的一末端受动器组件。
背景技术
诸如一主动阵列或薄膜晶体管(TFT)显示器、液晶显示器(LCD)、等离子体显示器及其类似的平板显示器,通常是用作为一电脑或电视显示器、移动电话显示器、个人数字应用助理(PDA)、以及正在成长中的其他许多设备中。平板显示器通常包括具有一层液晶材料夹于其间的二片玻璃板。该等玻璃板至少其中一片玻璃板包含一配置于其上面的导电薄膜,用以连结一电源。从该电源施加电力至该导电性薄膜,用以改变该液晶材料的配向而产生一图案显示。
随着平板显示器技术受到市场认同,对更大型显示器、高产量低制造成本的需求,也带动设备厂商发展新系统来提供平板显示器制造厂更大尺寸的玻璃基板。目前的玻璃处理设备通常是设计成可提供高达一平方公尺的基板。预料在最近的将来,处理设备会被建造来提供更大尺寸的基板。
玻璃基板处理的实施,通常是对基板施行复数个连续处理,用以在该基板上制造出元件、导体、以及绝缘体。每一该等处理通常是在一建造来实施一或更多处理步骤的一工艺处理室内实施。为了有效率地完成整个连续的处理步骤,通常数个处理处理室被连结至一中心传送处理室,该中心传送处理室装有一机器人,用以协助在该等处理处理室之间传送该基板。具有如此架构的处理平台,一般习称为「组合机床(cluster tool)」。这类用于玻璃基板处理的组合机床,可以购自AKT公司,该公司是Applied Materials,Inc.,of Santa Clara,Caiifornia.的全部自拥有子公司。
当玻璃基板的尺寸增加,用以操作和处理该等基板的制造设备亦必须变大。该操作基板的设备(例如上述的传送机器人)的尺寸增加,会增加许多技术上的挑战,必须加以克服以维持基板可被精确地传送。例如,一用以操作平板基板的传送机器人,具有一组由一腕部(wrist)支撑的悬臂梁式末端受动器,用以支撑基板的下面。然而,该需要充分支撑大面积基板的该长的末端受动器容易″下垂″或″松垂″。该末端受动器的悬垂必须借助较大的机器人动作范围及/或较大的构件余隙来调整,但是此两者都会造成工具成本上升。
该末端受动器可由一单片陶瓷制成,用以减少下垂,因为陶瓷材料具有高杨氏模量(Young's modulus)。然而,因为陶瓷在烘焙时会收缩20~30%,烘焙炉最少必须比完成品大20~30%。不容易找到如此大的烘焙炉来制造该末端受动器。因此,由于烘焙炉的尺寸限制及高制造成本,不容得到用于大尺寸基板的大尺寸单片末端受动器。
因此,需要一种用于大尺寸基板的末端受动器。
发明内容
本发明的目的是提供一末端受动器组件,用于一传送机器人。本发明的末端受动器组件包含一腕部、以及连结至该腕部的具有间隔分离关系的一第一和一第二末端受动器。该第一末端受动器含有连结至该腕部的一基座、以及连结至一位于该腕部相反侧的该基座末梢。该基座及该末梢可由相同或不同材料制成。该第一及第二末端受动器可具有不同共振频率来减少振动。
或者,对该第一和第二受动器提供一低放射率涂层(low emissivitycoating)。该低放射率涂层可还具有复数个压力释放槽,用以减少或避免在该涂层与该在下面的末端受动器因为不同的热膨胀而使涂层剥落。
以下将结合附图对本发明的具体实施例进行详细说明,以更清楚理解本发明的目的、特点、和优点。
为了有助于了解,在这些附图中的相同元件以相同的标号来表示。
附图说明
图1是一组合机床的简化示意图。
图2示出适用于图1的组合机床的一传送机器人的一末端受动器和腕部组件的一具体实施例。
图3示出一多片末端受动器的接合的一具体实施例。
图4示出用以连结一末端受动器至传送机器人的该腕部的一托架的一具体实施例。
图5是一具有低放射率涂层的末端受动器的部分立体图。
图6是一具有热隔断层的末端受动器的部分立体图。
具体实施方式
图1是一至少具有本发明的末端受动组件的组合机床100的简化示意图。该组合机床100通常包含一传送处理室104、复数处理处理室102、以及至少一负载锁定处理室112。处理处理室102通常被设置成可实施该处理的一个或多个工序。例如,该处理处理室102可作为一CVD处理室、一蚀刻处理室或是任何其他习知的处理处理室。该中心传送处理室104通常包含一传送机器人106,适合将一基板114(以虚线表示)传送入或传送出该负载锁定处理室112以及该各种处理处理102。该基板传送机器人106通常具有一末端受动组件120。该末端受动组件120包含从一腕部108延伸出来的复数个末端受动器110。当机械人106传送该基板114时,该末端受动器110适合将基板114支撑于其上面。
虽然该具有末端受动器110的传送机器人106适合用于习知基板,但是此处所述的机器人对于大面积基板特别有用,亦即,具有面积大至四平方米甚至更大的基板。而且,虽然该末端受动器组件120显示连结至位在该传送处理室104中的传送机器人106,然而该传送机器人106也可以配置在例如电子束测试(EBT)处理室的一工序处理室中。一例示的EBT处理室揭示于申请日为2004年2月12日的美国专利申请第10/778,982号中,。而且,该末端受动器可以利用于其他自动化应用上,包括希望在非真空环境下有效率地传送一大面积基板的各式应用。
图2示出一末端受动器组件120的具体实施例。在图2所示的具体实施例中,腕部108保持有并排方式的复数个末端受动器110,如此该末端受动器110可以支撑一基板。虽然图2显示有4个末端受动器110其连结至腕部108,但可以考虑其他数量的末端受动器110,例如亦可有效利用至少2个。
该末端受动器110包含连结至一末梢204的一基座202。传送机器人106的该腕部108和其他构件通常选用可在传送基板时减少热效应的材料来制造。举出但未受到限定的适合制造该腕部108的材料,有铝/碳化硅复合材料、玻璃陶瓷(特别是例如Neoceram N-0及Neoceram N-11)、铝/铁复合材料、碳、碳基复合材料、铸造铝合金、商业纯铬、石墨、钼、钛合金、钼钨合金、商业纯钼、Zerodur、Invar、钛Ti-6Al-4V合金、8090铝MMC、以及金属基复合材料等。金属基复合材料通常含有铝及其他轻金属的铝或其他轻金属(例如镁、钛、铝、镁合金、钛合金、以及铝合金)、以及高达30%的填料,例如碳化硅及其他类似物。
该末端受动器110的基座202和该末梢204,通常由具有高温度耐久性的材料制造而成。该材料的密度亦是一种要因素,因为其末端可能会由于其自身重量而下垂或松垂。其结果可能因应用在高温而恶化。下述表1显示可以使用来制造该末端受动器110的非全包括的种种材料。该表提供各材料的对应密度(g/cm3)、以及杨氏模量(giga-Pascals;GPa)。而且,表1的最后一栏显示杨氏模量除以密度(一显示硬度/密度的有关参数)。该计算出的数值越高,该末端受动器110越不会发生下垂或松垂。相反地,该数值越低,该末端受动器110越会发生松垂。该末端受动器110的该基座202及该末梢204的制造材料选择,可以选自可以减少该末端受动器110下垂的一材料或一组合材料,或是可以提供依据系统设计容许量的下垂量。
表1
材料 | 密度(g/cm3) | 杨氏模量(Gpa) | 杨氏模量/密度 |
陶瓷(氧化铝) | 3.8 | 370 | 97 |
MMC(金属基质复合材料) | |||
基质材料:硅、强化材料:SiC | 2.8 | 270 | 96 |
基质材料:铝、强化材料:Al2O3 | 3.4 | 210 | 62 |
铝铍基质(AlBeMet 162) | 2.1 | 193 | 92 |
CFRP(碳纤维) | 1.7 | 300 | 176 |
铝(6061) | 2.7 | 69 | 26 |
SST(304L) | 8 | 200 | 25 |
如表1所示,碳纤维强化聚合物(CFRP)具有最高的单位密度硬度,接着是氧化铝、具有以碳化硅强化的硅基金属基复合材料(MMC)、接着是含有约38%铝和62%铍的铝铍基质。如此铝-铍合金的其中一个例子为AlBeMet162,可以购自Brush Wellman公司(located in Ceveland,Ohio.)。AlBeMet是BrushWellman公司的注册商标。
在一具体实施例中,该末端受动器110的该基座202和该末梢204可以由陶瓷制成,因为陶瓷具有低下垂性(高杨氏模量)及高温耐久性。适合的陶瓷包含是未限定的有例如氧化铝、碳化碳(SiC)、氮化硅(SiN)以及其他类似物。末端受动器110的该基座202和该末梢204通设被设计成该末端受动器110的每一片都可以使用现有的烘焙炉制造而成。或者,若是有适合尺寸的烘焙炉可以利用,亦考虑制造一片式末端受动器110。
或者,可以使用不同材料来制造二片式该末端受动器110的该基座202和该末梢204。例如在一具体实施例中,该末端受动器110的该基座202可以由金属或CFRP制造而成。使用金属或CFRP可以使该基座202能够忍受较大压力,由于其尺寸较小,对该末端受动器110的运动,不会增加太多的动量。在一具体实施例中,该末端受动器110的末梢204可由陶瓷制造而成。利用与其他材料比较时陶瓷在高温度的耐久性,其可以减少下垂或松垂。除了表1所列的材料以外,该末端受动器110的该基座202和该末梢204可以由上述所列出适合该腕部108的的任何材料制造而成。任何符合本揭示教导的其他材料和/或组合材料均可考虑同等地于此应用。
亦可进而考虑将连结至该传送机器人106的该腕部108的各末端受动器110,使用与其他该传送机器人106的末端受动器110不同材料和/或不同复合材料制造而成。例如,二个或更多个末端受动器110的复合材料,在传送机器人106的各自末端受动器110可以选择不同共振频率,如此可以减少该传送机器人106和/或末端受动器110的振动。
图3是将末端受动器的基座202固定于末梢204的方法的一具体实施例。一嵌槽316形成在留置有一突出部310和一侧壁312的该基座202内,如此,该末梢204配置在该突出部310并横靠着该侧壁312。一衬垫304可选择性地位于该末梢204与侧壁312之间,用以减少该末端受动器110的该基座202与该末梢204之间,由于热、膨胀、振动、组装及拆卸时的操作及其他类似所造成的磨耗。可选择性地,可以在该末梢204与该突出部310之间配置一衬垫(未图示),用以更减少该基座202与该末梢204之间的磨耗。该衬垫304(及该具有选择性的衬垫、未图示),可以由橡胶、铝薄膜、或是其他适合材料制造而成。该衬垫304可以更减少振动从基座202传送至该末端受动器110的末梢204。一边缘起伏面例如斜面314,可减少组装时的损害。亦可以使用与斜面314的不同边缘起伏面,例如一幅射状或其他形状。该末梢204是使用复数个固定件固定于该基座202。在图3所示的具体实施例中,具有5个螺栓306通过该末梢204和该基座所具有的复数个孔,并由5颗螺帽308保持固定。配置于该末端受动器110的各侧面的一对板件302均匀分布固定件通过该末端受动器110的基座202与该末梢204表面所带来的负载。板件302可由不锈钢、钛合金、或是其他适合材料制造而成。
图4示出用以连结一末端受动器110至传送机器人的腕部108的一托架组件的具体实施例。在该具体实施例中,一托架402用以连结该末端受动器110至该腕部108。该托架402包含一具有阶梯通道416及上肩部418的主体414。该该末端受动器110安置在该通道416中。在该末端受动器与该托架402之间可配置一衬垫404。在图4所示的实施例中,配置有复数个孔408,用以借助复数个固定件(未图示)将该末端受动器110固定在该托架402。配置有一负载分布板406,用以均匀分布固定件通过该末端受动器110所带来的负载。
可以在该负载分布板406与末端受动器110之间配置一衬垫404。该衬垫404可由橡胶、铝薄膜、或其他能够忍受处理条件的薄片材料制造而成。该衬垫404亦可以具有阻尼器作用,用以减少该末端受动器110的振动。
一槽420形成在该腕部108内用以收容该托架402,该槽420包含一形成在该槽420的一侧面的突出部422,用以支撑该托架402的该上肩部418。在该托架402的该上肩部418形成有复数个孔410,用以提供固定件(未图示)固定该托架402于该腕部108的该突出部422。在该托架402的该上肩部418形成有复数个第二孔412,用以提供复数个固定螺丝(未图示)来控制或调整该末端受动器110与该腕部108的对准。
具选择性地,该末端受动器110可以涂布一具有低表面放射率的材料,如图5的部分立体图所示,有助于减少该末端受动器110的温度。在一具体实施例中,具有一涂层504,例如借助溅射至该末端受动器502上面。在该涂层504内形成有复数个槽506。该槽506可以部分延伸于或完全通过该涂层504。各槽506通常是延伸围绕该末端受动器110的周围。该槽506用以减少因为涂层504和下面的末端受动器502因热膨胀速度不同而引起的剥落。考虑可以将涂层504与槽506配置该末端受动器110的选择表面。例如,该涂层504可以单独涂布在该末端受动器110的上部表面,或单独涂布在该末端受动器110的该末梢204(如图2所示),或该末端受动器110的任何表面或需要降低温度的部分。
该涂层504可以是例如溅射铝、或铬、或镀镍及其他类似物。通常任何具有低放射率的材料可借助电镀或是溅射而用于该涂层504。或者,该涂层504可以抛光或更降低该布层504的放射率。通常,放射率低至约0.04至0.11的范围为适合。该涂层504的低放射率代表反射大部分该末端受动器110所遭遇到的能量,如此可以避免吸收而将该能转变成为热量。
在另一具体实施例中,如图6所示,该末端受动器110被一热隔离件610覆盖。该热隔离件610可以包括一基座部602和一末梢部604,分别与该末端受动器110的该基座202和该末梢204同形。或者,该热隔离件610可以制成覆盖该末端受动器110的全部或部分的单片。该热隔离件610机械地固定于该末端受动器110,例如使用螺丝固定、栓紧、焊接、黏着、胶贴及其他类似方法。
该热隔离件610通常包含适应处理条件的一低放射率材料。在一具体实施例中,该热隔离件610是一铝片或铝箔。或者,可以抛光该热隔离件610或进行其他处理来更降低该热隔离件610的放射率。通常,放射率低至约0.04至0.11的范围为适合。虽然在图6中示出该热隔离件610只覆盖该末端受动器110的上表面,然而可以考虑将该热隔离件610配置在该末端受动器110的需要减少幅射热的任何表面,或多层表面。
如此,上述提供了一末端受动器组件的各种具体实施例。在一具体实施例中,一包括复数多片式末端受动器的末端受动器组件,适合用以操作大面积基板。该末端受动器可以由可以减少垂悬或下垂的一材料或一组合材料制造而成。在连结该末端受动器至该传送机器人的腕部的接合处、以及在连结该末端受动器的该基座和该末梢的接合处可以具备有减振衬垫。该末端受动器可以具选择性地还涂布一低放射率的材料,用以减少对该末端受动器加热。在该涂层可以具备复数个压力释放槽,用以避免该涂层从该末端受动器剥落。如此,可以利用一具有复数末端受动器(具有上述所揭示的一些或全部特色)的一机器人,以较小余隙和较小动作范围的处理系统来移动基板,借此,可以降低该设备成本。
虽然前述是参照本发明的较佳具体实施例,但是在不悖离本发明的基本范围,其他和进一步的具体实施例当可以被设计,本发明的范围是由下列本申请权利要求范围确定。
Claims (36)
1.一种一基板机器人用的末端受动器组件,包含:
一腕部;
一基座,连结至该腕部的第一面;
一末梢,连结至位于该腕部相反侧的该基座上,该末梢和该基座界定一第一末端受动器;以及
一第二末端受动器,以与该第一末端受动器具有间隔分离关系的方式连结至该腕部的第一面。
2.如权利要求1所述的末端受动器组件,其特征在于该基座和该末梢是由不同材料制造而成。
3.如权利要求2所述的末端受动器组件,其特征在于该基座是由一金属、金属基复合材料、金属合金或CFRP制造而成。
4.如权利要求2所述的末端受动器组件,其特征在于该末梢是由陶瓷制造而成。
5.如权利要求1所述的末端受动器组件,其特征在于该基座和该末梢是由相同材料制造而成。
6.如权利要求5所述的末端受动器组件,其特征在于该基座和该末梢是由陶瓷制造而成。
7.如权利要求1所述的末端受动器组件,其特征在于该第一末端受动器和该第二末端受动器具有不同共振频率。
8.如权利要求1所述的末端受动器组件,其特征在于该第一末端受动器还包含:
形成于该基座和该末梢的一低放射率涂层。
9.如权利要求8所述的末端受动器组件,其特征在于该涂层是以溅射或电镀其中之一种方式被溅射或电镀在该基座和该末梢上。
10.如权利要求8所述的末端受动器组件,其特征在于该涂层是由铝、铬、或镍形成。
11.如权利要求8所述的末端受动器组件,其特征在于还包含:
复数个形成在该涂层内的压力释放槽。
12.如权利要求1所述的末端受动器组件,其特征在于该第一末端受动器还包含:
位于该基座和该末梢之间的一衬垫夹层。
13.如权利要求12所述的末端受动器组件,其特征在于该衬垫是由橡胶或铝薄膜制造而成。
14.如权利要求1所述的末端受动器组件,其特征在于还含有:
配置在该腕部和该基座之间的一托架。
15.如权利要求14所述的末端受动器组件,其特征在于还含有:
配置在该托架和该基座之间的一衬垫。
16.如权利要求15所述的末端受动器组件,其特征在于该衬垫是由金属或橡胶制造而成。
17.如权利要求14所述的末端受动器组件,其特征在于还含有:
复数固定螺丝,用以调整该第一末端受动器与该腕部的对准。
18.如权利要求14所述的末端受动器组件,其特征在于该托架还含有:
一主体,具有适合收容该基座的通道;以及
一对肩部,形成在该主体的一上部。
19.如权利要求18所述的末端受动器组件,其特征在于该托架适合装入一形成在该腕部内的槽中,该托架的肩部是安置在一形成在该槽内的一对配对凸缘上。
20.如权利要求19所述的末端受动器组件,其特征在于还含有:
复数固定螺丝穿过形成于贯穿该肩部的复数孔,并且可调整地往该肩部下面延伸以衔接该凸缘的上表面,从而可控制地调整该第一末端受动器与该腕部的对准。
21.如权利要求19所述的末端受动器组件,其特征在于还含有:
一衬垫,配置在该通道内并夹在该托架与该基座之间。
22.如权利要求21所述的末端受动器组件,其特征在于该衬垫是由橡胶或金属制造而成。
23.一种用于基板机器人的末端受动器组件,包含:
一腕部;
一第一末端受动器,连结至该腕部的第一面;
一低放射率涂层,形成于该第一末端受动器上;
复数个压力释放槽,形成在该涂层内;以及
一第二末端受动器,以与该第一末端受动器具有间隔分离关系的方式连结至该腕部的第一面。
24.如权利要求23所述的末端受动器组件,其特征在于该涂层是以溅射或电镀其中之一种方式被溅射或电镀在该第一末端受动器上。
25.如权利要求23所述的末端受动器组件,其特征在于该涂层是由铝、铬、或镍形成。
26.如权利要求23所述的末端受动器组件,其特征在于该第一和第二末端受动器具有不同的共振频率。
27.如权利要求23所述的末端受动器组件,其特征在于该第一末端受动器是借助一托架连结至该腕部,该腕部包含:
一主体,具有适合收容该第一末端受动器的通道;以及
一对肩部,形成在该主体的上部。
28.如权利要求27所述的末端受动器组件,其特征在于该托架适合装入一形成在该腕部内的通道中,该托架的肩部是安置在一形成在该槽内的一对配对凸缘上。
29.如权利要求28所述的末端受动器组件,其特征在于还含有:
复数固定螺丝穿过形成于贯穿该肩部的复数个孔,并且可调整地往该肩部下面延伸以衔接该凸缘的上表面,因此能够可控制地调整该第一末端受动器与该腕部的对准。
30.如权利要求27所述的末端受动器组件,其特征在于还含有:
一衬垫,配置在该通道内并夹在该托架与该基座之间。
31.如权利要求30所述的末端受动器组件,其特征在于该衬垫是由橡胶或金属制造而成。
32.如权利要求27所述的末端受动器组件,其特征在于该第一末端受动器还包含:
一基座,连结至该腕部的第一面;
一末梢,连结至位于该腕部相反侧的基座上。
33.一种传送基板的方法,包含:
以一末端受动器组件支撑一基板,该组件包含:
一腕部;
一基座,连结至该腕部的第一面;
一末梢,连结至位于该腕部相反侧的基座上,该末梢和该基座界定一第一末端受动器;以及
一第二末端受动器,以与该第一末端受动器具有间隔分离关系的方式连结至该腕部的第一面;以及
传送该基板至一基板支撑件。
34.如权利要求33所述的传送基板的方法,其特征在于该末端受动器组件是配置在传送处理室中的一基板传送机器人的一部分。
35.一种制造末端受动器组件的方法,包含:
提供一具有第一面的腕部;
连结一基座至该腕部的第一面;
连结一末梢至位于该腕部相反侧的基座上,该末梢和该基座界定具有第一振动频率的一第一末端受动器;以及
以与该第一末端受动器具有间隔分离关系的方式连结该一第二末端受动器至该腕部的第一面,该第二末端受器具有与该第一振动频率不同的第二振动频率。
36.如权利要求35所述的制造末端受动器组件的方法,其特征在于还包含:
在该基座与该末梢之间插入一减振衬垫。
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- 2005-06-24 TW TW094121286A patent/TWI278005B/zh not_active IP Right Cessation
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CN107665845A (zh) * | 2016-07-29 | 2018-02-06 | 株式会社爱发科 | 基板搬运机器人及真空处理装置 |
CN107665845B (zh) * | 2016-07-29 | 2023-04-14 | 株式会社爱发科 | 基板搬运机器人及真空处理装置 |
Also Published As
Publication number | Publication date |
---|---|
US7073834B2 (en) | 2006-07-11 |
KR20060046530A (ko) | 2006-05-17 |
KR100802561B1 (ko) | 2008-02-13 |
CN100445048C (zh) | 2008-12-24 |
JP2006041496A (ja) | 2006-02-09 |
TWI278005B (en) | 2007-04-01 |
US20050285419A1 (en) | 2005-12-29 |
TW200601408A (en) | 2006-01-01 |
JP4357457B2 (ja) | 2009-11-04 |
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