CN1638008A - 场发射器件、采用该器件的显示器及其制造方法 - Google Patents

场发射器件、采用该器件的显示器及其制造方法 Download PDF

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Publication number
CN1638008A
CN1638008A CNA2004100982497A CN200410098249A CN1638008A CN 1638008 A CN1638008 A CN 1638008A CN A2004100982497 A CNA2004100982497 A CN A2004100982497A CN 200410098249 A CN200410098249 A CN 200410098249A CN 1638008 A CN1638008 A CN 1638008A
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CN
China
Prior art keywords
photoresist layer
electrode
cnt
gate insulator
mask
Prior art date
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Pending
Application number
CNA2004100982497A
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English (en)
Chinese (zh)
Inventor
崔濬熙
安德烈·朱卡尼伊夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung SDI Co Ltd
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Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Publication of CN1638008A publication Critical patent/CN1638008A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48—Electron guns
    • H01J29/481—Electron guns using field-emission, photo-emission, or secondary-emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
CNA2004100982497A 2003-12-22 2004-11-30 场发射器件、采用该器件的显示器及其制造方法 Pending CN1638008A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR94415/2003 2003-12-22
KR1020030094415A KR20050062742A (ko) 2003-12-22 2003-12-22 전계방출소자와, 이를 적용한 표시소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
CN1638008A true CN1638008A (zh) 2005-07-13

Family

ID=34675895

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004100982497A Pending CN1638008A (zh) 2003-12-22 2004-11-30 场发射器件、采用该器件的显示器及其制造方法

Country Status (4)

Country Link
US (2) US7132304B2 (ko)
JP (1) JP2005183388A (ko)
KR (1) KR20050062742A (ko)
CN (1) CN1638008A (ko)

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* Cited by examiner, † Cited by third party
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CN1975976B (zh) * 2006-10-17 2010-08-25 中原工学院 多方型阴极栅控结构的平板显示器及其制作工艺
CN101071725B (zh) * 2007-06-19 2011-12-07 中原工学院 多柱型阴极发射结构的平板显示器及其制作工艺
CN106158551A (zh) * 2016-07-08 2016-11-23 中山大学 自对准聚焦结构的纳米线冷阴极电子源阵列及其制作方法
CN107026064A (zh) * 2017-04-10 2017-08-08 金华职业技术学院 一种发射电流可控的小型化非放射性电子源

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RU2455724C1 (ru) * 2010-11-13 2012-07-10 Открытое акционерное общество "НИИ молекулярной электроники и завод "Микрон" Структура и способ изготовления интегральных автоэмиссионных элементов с эмиттерами на основе наноалмазных покрытий
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1975976B (zh) * 2006-10-17 2010-08-25 中原工学院 多方型阴极栅控结构的平板显示器及其制作工艺
CN101071725B (zh) * 2007-06-19 2011-12-07 中原工学院 多柱型阴极发射结构的平板显示器及其制作工艺
CN106158551A (zh) * 2016-07-08 2016-11-23 中山大学 自对准聚焦结构的纳米线冷阴极电子源阵列及其制作方法
CN106158551B (zh) * 2016-07-08 2017-11-21 中山大学 自对准聚焦结构的纳米线冷阴极电子源阵列及其制作方法
CN107026064A (zh) * 2017-04-10 2017-08-08 金华职业技术学院 一种发射电流可控的小型化非放射性电子源
CN107026064B (zh) * 2017-04-10 2018-12-14 金华职业技术学院 一种发射电流可控的小型化非放射性电子源

Also Published As

Publication number Publication date
US20060255344A1 (en) 2006-11-16
US7508124B2 (en) 2009-03-24
US20050133779A1 (en) 2005-06-23
JP2005183388A (ja) 2005-07-07
US7132304B2 (en) 2006-11-07
KR20050062742A (ko) 2005-06-27

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