KR100560244B1 - 탄소나노구조체 또는 나노와이어를 이용한 전계 방출어레이 및 그 제조 방법 - Google Patents
탄소나노구조체 또는 나노와이어를 이용한 전계 방출어레이 및 그 제조 방법 Download PDFInfo
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- KR100560244B1 KR100560244B1 KR1020030038236A KR20030038236A KR100560244B1 KR 100560244 B1 KR100560244 B1 KR 100560244B1 KR 1020030038236 A KR1020030038236 A KR 1020030038236A KR 20030038236 A KR20030038236 A KR 20030038236A KR 100560244 B1 KR100560244 B1 KR 100560244B1
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- carbon
- nanowire
- carbon nanostructure
- field emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
- Y10S977/759—Quantum well dimensioned for intersubband transitions, e.g. for use in unipolar light emitters or quantum well infrared photodetectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
Abstract
Description
Claims (8)
- 삭제
- (1) 성장기판 상에 촉매를 사용하여 탄소나노구조체 또는 나노와이어를 형성시키는 단계;(2) 상기 탄소나노구조체 또는 나노와이어의 한쪽 말단을 코팅하는 단계;(3) 코팅된 탄소나노구조체 또는 나노와이어를 상기 성장기판으로부터 분리하는 단계;(4) 상기 코팅된 탄소나노구조체 또는 나노와이어를 금속 전극 상부에 배치시키는 단계;(5) 상기 전극 상부에 배치된 탄소나노구조체 또는 나노와이어의 코팅된 말단을 금속전극과 접합시키는 단계를 포함하는, 전계 방출 어레이의 제조방법.
- 제 2 항에 있어서,(2) 단계의 코팅 처리 전에 탄소나노구조체 또는 나노와이어를 표면 처리하거나, 코팅 처리 후에 표면 처리하고 다시 코팅하는 단계를 더 포함하는 전계 방출 어레이의 제조방법.
- 제 2 항에 있어서,(1) 단계에서 사용하는 촉매는 Li, K, Mg, Ca, Sc, Y, La, Ac, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, P, As 및 Sb으로 이루어진 군으로부터 선택된 하나 이상의 복합체, 산화물, 질화물, 탄화물, 황화물, 염화물, 황산화합물, 질산화합물 또는 그 혼합물인 것을 특징으로 하는 제조 방법.
- 제 2 항에 있어서,(2) 단계에서 탄소나노구조체 또는 나노와이어의 한쪽 말단을 금속, 합금, 및 이들의 산화물, 질화물, 황화물, 탄화물 및 염화물로 이루어진 군으로부터 선택된 하나 이상의 물질로 코팅하는 것을 특징으로 하는 제조 방법.
- 제 3 항에 있어서,표면처리제는 오존, 질소산화물(NOx), 암모니아, 시안화수소(HCN), 황산화물(SOx), 염소, 이산화탄소, 염산, 질산, 불산, 인산, 황산, 과산화수소, 과망간산칼륨, 이산화염소, 요오드산칼륨, 피리딘 및 황화수소로 구성된 군에서 선택된 하나 이상을 조합한 액체나 그 희석액인 것을 특징으로 하는 제조 방법.
- 제 2 항에 있어서,(2) 단계의 코팅시 전극의 재료와 동일한 코팅제를 사용하는 것을 특징으로 하는 제조 방법.
- 전극층 및 한쪽 말단이 코팅된 탄소나노구조체 또는 나노와이어층을 포함하고, 탄소나노구조체 또는 나노와이어의 코팅된 말단과 전극층이 접합된, 제 2 항의 방법에 의해 제조된 전계방출 어레이.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR1020030038236A KR100560244B1 (ko) | 2003-06-13 | 2003-06-13 | 탄소나노구조체 또는 나노와이어를 이용한 전계 방출어레이 및 그 제조 방법 |
US10/865,578 US7098112B2 (en) | 2003-06-13 | 2004-06-09 | Preparation of field emission array comprising nanostructures |
JP2004172110A JP3853333B2 (ja) | 2003-06-13 | 2004-06-10 | ナノ構造体を含む電界放出アレイの製造方法 |
CNB2004100639204A CN100545985C (zh) | 2003-06-13 | 2004-06-11 | 制备包含纳米结构的场致发射阵列 |
Applications Claiming Priority (1)
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KR1020030038236A KR100560244B1 (ko) | 2003-06-13 | 2003-06-13 | 탄소나노구조체 또는 나노와이어를 이용한 전계 방출어레이 및 그 제조 방법 |
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KR20040107229A KR20040107229A (ko) | 2004-12-20 |
KR100560244B1 true KR100560244B1 (ko) | 2006-03-10 |
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KR1020030038236A KR100560244B1 (ko) | 2003-06-13 | 2003-06-13 | 탄소나노구조체 또는 나노와이어를 이용한 전계 방출어레이 및 그 제조 방법 |
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US (1) | US7098112B2 (ko) |
JP (1) | JP3853333B2 (ko) |
KR (1) | KR100560244B1 (ko) |
CN (1) | CN100545985C (ko) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050062742A (ko) * | 2003-12-22 | 2005-06-27 | 삼성에스디아이 주식회사 | 전계방출소자와, 이를 적용한 표시소자 및 그 제조방법 |
KR20050106670A (ko) * | 2004-05-06 | 2005-11-11 | 삼성에스디아이 주식회사 | Cnt 전계방출소자의 제조방법 |
KR100590632B1 (ko) | 2004-06-24 | 2006-06-19 | 한국기계연구원 | 유전영동을 이용한 나노물질의 패터닝방법 |
EP2586744B1 (en) * | 2005-04-25 | 2016-01-13 | Smoltek AB | Nanostructure and precursor formation on conducting substrate |
KR100702531B1 (ko) * | 2006-03-20 | 2007-04-02 | 전자부품연구원 | 나노와이어 소자 및 제조방법 |
JP2008041289A (ja) | 2006-08-02 | 2008-02-21 | Hitachi High-Technologies Corp | 電界放出型電子銃およびそれを用いた電子線応用装置 |
CN101205060B (zh) | 2006-12-20 | 2011-05-04 | 清华大学 | 碳纳米管阵列的制备方法 |
CN101206979B (zh) * | 2006-12-22 | 2010-05-19 | 清华大学 | 场发射阴极的制备方法 |
CN101206980B (zh) * | 2006-12-22 | 2010-04-14 | 清华大学 | 场发射阴极的制备方法 |
KR20080082338A (ko) * | 2007-03-08 | 2008-09-11 | 삼성에스디아이 주식회사 | 전자 방출 소자, 이를 구비한 전자 방출 디스플레이 장치및 이의 제조방법 |
KR100924766B1 (ko) * | 2007-06-22 | 2009-11-05 | 삼성전자주식회사 | 금속 나노입자를 포함하는 탄소 나노튜브(cnt) 박막 및그 제조방법 |
KR100987385B1 (ko) * | 2007-09-03 | 2010-10-12 | 금오공과대학교 산학협력단 | 나노 구조물 복합체 및 그의 제조 방법 |
KR100926219B1 (ko) * | 2008-01-31 | 2009-11-09 | 경희대학교 산학협력단 | 전자방출 특성이 향상된 필드 에미터의 제조방법 |
JP2009245672A (ja) * | 2008-03-31 | 2009-10-22 | Univ Of Tokyo | フィールドエミッション装置、ならびに、その製造方法 |
CN101811658B (zh) * | 2009-02-20 | 2012-09-19 | 清华大学 | 碳纳米管阵列传感器及其制备方法 |
CN101825736B (zh) | 2009-03-03 | 2013-07-24 | 北京京东方光电科技有限公司 | 增强棱镜膜 |
EP2502263B1 (en) * | 2009-11-18 | 2014-09-03 | 3M Innovative Properties Company | Wet etching method for ii-vi semiconductors |
TWI482192B (zh) | 2012-08-22 | 2015-04-21 | Univ Nat Defense | 場發射陰極元件之製造方法、其場發射陰極元件及其場發射發光燈源 |
DE102016121462A1 (de) * | 2016-11-09 | 2018-05-09 | Aixtron Se | Strukturierte Keimschicht |
KR101893000B1 (ko) * | 2017-03-09 | 2018-08-29 | 성균관대학교 산학협력단 | Chloride계 전자방출 물질 및 이의 제조방법 |
JP6999877B2 (ja) | 2017-07-31 | 2022-01-19 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
JP7136020B2 (ja) | 2019-06-28 | 2022-09-13 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
JP7056628B2 (ja) | 2019-06-28 | 2022-04-19 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
JP2021057443A (ja) | 2019-09-30 | 2021-04-08 | セイコーエプソン株式会社 | 発光装置、および、プロジェクター |
JP7424038B2 (ja) | 2019-12-23 | 2024-01-30 | セイコーエプソン株式会社 | 発光装置、および、プロジェクター |
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AU2003304297A1 (en) * | 2002-08-23 | 2005-01-21 | Sungho Jin | Article comprising gated field emission structures with centralized nanowires and method for making the same |
US6864571B2 (en) * | 2003-07-07 | 2005-03-08 | Gelcore Llc | Electronic devices and methods for making same using nanotube regions to assist in thermal heat-sinking |
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2003
- 2003-06-13 KR KR1020030038236A patent/KR100560244B1/ko active IP Right Grant
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2004
- 2004-06-09 US US10/865,578 patent/US7098112B2/en active Active
- 2004-06-10 JP JP2004172110A patent/JP3853333B2/ja not_active Expired - Fee Related
- 2004-06-11 CN CNB2004100639204A patent/CN100545985C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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KR20040107229A (ko) | 2004-12-20 |
US20040253758A1 (en) | 2004-12-16 |
US7098112B2 (en) | 2006-08-29 |
CN100545985C (zh) | 2009-09-30 |
JP3853333B2 (ja) | 2006-12-06 |
JP2005005266A (ja) | 2005-01-06 |
CN1574161A (zh) | 2005-02-02 |
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