CN1437199A - 将数据写入电流提供给多个存储块的薄膜磁存储装置 - Google Patents
将数据写入电流提供给多个存储块的薄膜磁存储装置 Download PDFInfo
- Publication number
- CN1437199A CN1437199A CN03103169A CN03103169A CN1437199A CN 1437199 A CN1437199 A CN 1437199A CN 03103169 A CN03103169 A CN 03103169A CN 03103169 A CN03103169 A CN 03103169A CN 1437199 A CN1437199 A CN 1437199A
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- digital line
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- 238000003860 storage Methods 0.000 title claims description 148
- 239000010409 thin film Substances 0.000 title 1
- 238000012360 testing method Methods 0.000 claims description 123
- 230000008878 coupling Effects 0.000 claims description 62
- 238000010168 coupling process Methods 0.000 claims description 62
- 238000005859 coupling reaction Methods 0.000 claims description 62
- 238000005520 cutting process Methods 0.000 claims description 9
- 230000004913 activation Effects 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 5
- 230000005415 magnetization Effects 0.000 description 44
- 238000010586 diagram Methods 0.000 description 27
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- 230000004888 barrier function Effects 0.000 description 2
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- 238000013500 data storage Methods 0.000 description 2
- 230000005307 ferromagnetism Effects 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/06—Acceleration testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5002—Characteristic
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002026945 | 2002-02-04 | ||
JP26945/02 | 2002-02-04 | ||
JP26945/2002 | 2002-02-04 | ||
JP2002207044A JP4208507B2 (ja) | 2002-02-04 | 2002-07-16 | 薄膜磁性体記憶装置 |
JP207044/2002 | 2002-07-16 | ||
JP207044/02 | 2002-07-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1437199A true CN1437199A (zh) | 2003-08-20 |
CN1293569C CN1293569C (zh) | 2007-01-03 |
Family
ID=27624607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031031692A Expired - Fee Related CN1293569C (zh) | 2002-02-04 | 2003-01-31 | 将数据写入电流提供给多个存储块的薄膜磁存储装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6747910B2 (zh) |
JP (1) | JP4208507B2 (zh) |
KR (1) | KR100560135B1 (zh) |
CN (1) | CN1293569C (zh) |
DE (1) | DE10304453A1 (zh) |
TW (1) | TW582034B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7023727B2 (en) * | 2000-06-15 | 2006-04-04 | Pageant Technologies, Inc. | Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry |
US6822891B1 (en) * | 2003-06-16 | 2004-11-23 | Kabushiki Kaisha Toshiba | Ferroelectric memory device |
US7142442B1 (en) | 2004-03-08 | 2006-11-28 | Xilinx, Inc. | Segmented dataline scheme in a memory with enhanced full fault coverage memory cell testability |
KR100735748B1 (ko) * | 2005-11-09 | 2007-07-06 | 삼성전자주식회사 | 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들 |
JP5101084B2 (ja) * | 2005-11-09 | 2012-12-19 | 三星電子株式会社 | 磁気メモリセルアレイ素子 |
KR100735750B1 (ko) | 2005-12-15 | 2007-07-06 | 삼성전자주식회사 | 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들 |
US8120976B2 (en) * | 2006-08-28 | 2012-02-21 | Samsung Electronics Co., Ltd. | Line defect detection circuit for detecting weak line |
JP2009134794A (ja) * | 2007-11-29 | 2009-06-18 | Renesas Technology Corp | 半導体装置 |
JP5315940B2 (ja) * | 2008-11-06 | 2013-10-16 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
WO2010125941A1 (ja) * | 2009-04-28 | 2010-11-04 | 日本電気株式会社 | 磁気抵抗記憶装置のスクリーニング方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US226818A (en) * | 1880-04-20 | Eeastus woodwaed and matthias beook | ||
US26997A (en) * | 1860-01-31 | Brick-machine | ||
US4985473A (en) * | 1980-05-20 | 1991-01-15 | Minnesota Mining And Manufacturing Company | Compositions for providing abherent coatings |
US4567073A (en) * | 1982-07-02 | 1986-01-28 | Minnesota Mining And Manufacturing Company | Composite low surface energy liner of perfluoropolyether |
EP0186033B1 (en) * | 1984-12-12 | 1992-08-19 | Daikin Industries, Limited | A material for contact lenses |
IT1185520B (it) * | 1985-02-22 | 1987-11-12 | Montefluos Spa | Poliacrilati e poliacrilammidi fluorurati a grado di reticolazione controllato e loro procedimento di preparazione |
EP0247489B1 (en) * | 1986-05-28 | 1993-08-25 | Daikin Industries, Limited | Fluorine containing water and oil repellent composition |
US4957985A (en) * | 1986-12-29 | 1990-09-18 | Mitsui Petrochemical Industries, Ltd. | Fluorine-substituted hydrocarbon group grafted (meth)acrylate polymers |
EP0357051A3 (en) * | 1988-08-30 | 1990-08-01 | OMRON Corporation | Contactless switch |
US4929692A (en) * | 1989-01-11 | 1990-05-29 | Ciba-Geigy Corporation | Crosslinked copolymers and ophthalmic devices made from vinylic macromers containing perfluoropolyalkyl ether and polyalkyl ether segments and minor amounts of vinylic comonomers |
US5126971A (en) * | 1989-12-22 | 1992-06-30 | Magnex Corporation | Thin film magnetic core memory and method of making same |
CN1069595A (zh) * | 1991-08-15 | 1993-03-03 | 马格涅斯公司 | 薄膜磁芯存储器及其制造方法 |
IT1290462B1 (it) * | 1997-04-08 | 1998-12-03 | Ausimont Spa | Polimeri idrogenati modificati |
US6589650B1 (en) * | 2000-08-07 | 2003-07-08 | 3M Innovative Properties Company | Microscope cover slip materials |
US6238798B1 (en) * | 1999-02-22 | 2001-05-29 | 3M Innovative Properties Company | Ceramer composition and composite comprising free radically curable fluorochemical component |
IT1312344B1 (it) * | 1999-06-03 | 2002-04-15 | Ausimont Spa | Composizioni per film a basso indice di rifrazione. |
US6272041B1 (en) | 2000-08-28 | 2001-08-07 | Motorola, Inc. | MTJ MRAM parallel-parallel architecture |
US6646911B2 (en) * | 2001-10-26 | 2003-11-11 | Mitsubishi Denki Kabushiki Kaisha | Thin film magnetic memory device having data read current tuning function |
JP2003196973A (ja) * | 2001-12-21 | 2003-07-11 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
JP2003208796A (ja) * | 2002-01-15 | 2003-07-25 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
JP2003346474A (ja) * | 2002-03-19 | 2003-12-05 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
-
2002
- 2002-07-16 JP JP2002207044A patent/JP4208507B2/ja not_active Expired - Fee Related
- 2002-12-24 TW TW091137155A patent/TW582034B/zh not_active IP Right Cessation
-
2003
- 2003-01-02 US US10/334,713 patent/US6747910B2/en not_active Expired - Fee Related
- 2003-01-31 CN CNB031031692A patent/CN1293569C/zh not_active Expired - Fee Related
- 2003-02-04 DE DE10304453A patent/DE10304453A1/de not_active Withdrawn
- 2003-02-04 KR KR1020030006687A patent/KR100560135B1/ko not_active IP Right Cessation
-
2004
- 2004-05-24 US US10/851,159 patent/US6925029B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040218452A1 (en) | 2004-11-04 |
KR20030066438A (ko) | 2003-08-09 |
KR100560135B1 (ko) | 2006-03-13 |
TW582034B (en) | 2004-04-01 |
CN1293569C (zh) | 2007-01-03 |
DE10304453A1 (de) | 2003-08-21 |
US6925029B2 (en) | 2005-08-02 |
US6747910B2 (en) | 2004-06-08 |
TW200303021A (en) | 2003-08-16 |
JP2003297070A (ja) | 2003-10-17 |
JP4208507B2 (ja) | 2009-01-14 |
US20030147274A1 (en) | 2003-08-07 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: MISSUBISHI ELECTRIC CORP. Effective date: 20140416 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140416 Address after: Kawasaki, Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Patentee before: Missubishi Electric Co., Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: Renesas Electronics Corporation Address before: Kawasaki, Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
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CP02 | Change in the address of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070103 Termination date: 20190131 |
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CF01 | Termination of patent right due to non-payment of annual fee |