CN1421927A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1421927A
CN1421927A CN02152669A CN02152669A CN1421927A CN 1421927 A CN1421927 A CN 1421927A CN 02152669 A CN02152669 A CN 02152669A CN 02152669 A CN02152669 A CN 02152669A CN 1421927 A CN1421927 A CN 1421927A
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China
Prior art keywords
electrode terminal
terminal
electrode
semiconductor device
transistor
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Pending
Application number
CN02152669A
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English (en)
Chinese (zh)
Inventor
赤岭均
铃木将司
山根正雄
安逹徹朗
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Hitachi Ltd
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Hitachi Ltd
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Publication of CN1421927A publication Critical patent/CN1421927A/zh
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    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
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    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
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    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
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    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H03F2200/00—Indexing scheme relating to amplifiers
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    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
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    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN02152669A 2001-11-30 2002-11-29 半导体器件 Pending CN1421927A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP366351/2001 2001-11-30
JP2001366351A JP2003168736A (ja) 2001-11-30 2001-11-30 半導体素子及び高周波電力増幅装置並びに無線通信機

Publications (1)

Publication Number Publication Date
CN1421927A true CN1421927A (zh) 2003-06-04

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ID=19176263

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02152669A Pending CN1421927A (zh) 2001-11-30 2002-11-29 半导体器件

Country Status (3)

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US (5) US6765268B2 (enExample)
JP (1) JP2003168736A (enExample)
CN (1) CN1421927A (enExample)

Cited By (6)

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CN104485361A (zh) * 2014-12-25 2015-04-01 上海华虹宏力半导体制造有限公司 绝缘体上硅射频开关器件结构
CN105075286A (zh) * 2012-12-17 2015-11-18 微软技术许可有限责任公司 设备的充分刚性互连结构
US9893015B2 (en) 2015-09-24 2018-02-13 Delta Electronics, Inc. Semiconductor device
CN109494204A (zh) * 2018-10-19 2019-03-19 隔空微电子（广州）有限公司 低噪声放大器芯片封装结构和卫星高频头电路
CN112420841A (zh) * 2020-11-09 2021-02-26 佛山立正不锈钢工业管有限公司 负微分电阻电路以及神经元晶体管结构
CN108292907B (zh) * 2015-12-08 2021-07-16 三菱电机株式会社 功率放大器

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US6825559B2 (en) 2003-01-02 2004-11-30 Cree, Inc. Group III nitride based flip-chip intergrated circuit and method for fabricating
JP2004260364A (ja) * 2003-02-25 2004-09-16 Renesas Technology Corp 半導体装置及び高出力電力増幅装置並びにパソコンカード
JP4146290B2 (ja) * 2003-06-06 2008-09-10 株式会社ルネサステクノロジ 半導体装置
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US7211840B2 (en) * 2003-10-31 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Transistor
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JP3999759B2 (ja) * 2004-04-02 2007-10-31 富士通株式会社 基板及び電子機器
US7135748B2 (en) * 2004-10-26 2006-11-14 Power Integrations, Inc. Integrated circuit with multi-length output transistor segment
US7548111B2 (en) * 2005-01-19 2009-06-16 Micro Mobio Corporation Miniature dual band power amplifier with reserved pins
US7508261B2 (en) * 2005-01-19 2009-03-24 Micro-Mobio, Inc. Systems of miniaturized compatible radio frequency wireless devices
EP1900022B1 (en) * 2005-07-01 2015-10-07 Vishay-Siliconix Complete power management system implemented in a single surface mount package
US7385263B2 (en) * 2006-05-02 2008-06-10 Atmel Corporation Low resistance integrated MOS structure
US7834662B2 (en) 2006-12-13 2010-11-16 Apple Inc. Level shifter with embedded logic and low minimum voltage
US8111001B2 (en) 2007-07-17 2012-02-07 Cree, Inc. LED with integrated constant current driver
JP4655083B2 (ja) * 2007-11-16 2011-03-23 セイコーエプソン株式会社 微小電気機械装置
EP2269219B1 (en) * 2008-04-15 2012-01-25 Nxp B.V. High frequency field-effect transistor
JP5644042B2 (ja) * 2008-10-20 2014-12-24 株式会社村田製作所 半導体装置
GB2466313A (en) * 2008-12-22 2010-06-23 Cambridge Silicon Radio Ltd Radio Frequency CMOS Transistor
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