JP6488720B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6488720B2 JP6488720B2 JP2015011586A JP2015011586A JP6488720B2 JP 6488720 B2 JP6488720 B2 JP 6488720B2 JP 2015011586 A JP2015011586 A JP 2015011586A JP 2015011586 A JP2015011586 A JP 2015011586A JP 6488720 B2 JP6488720 B2 JP 6488720B2
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- 239000004065 semiconductor Substances 0.000 title claims description 46
- 230000005540 biological transmission Effects 0.000 claims description 43
- 230000000052 comparative effect Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010026749 Mania Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
- H01L27/0682—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors comprising combinations of capacitors and resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/22—Attenuating devices
- H01P1/227—Strip line attenuators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0005—Modifications of input or output impedance
Description
図1は、本発明の実施の形態1に係る半導体装置10の平面図である。半導体装置10はパッケージ12を備えている。パッケージ12は、例えば銅に金メッキをして形成された金属パッケージである。パッケージ12には入力電極14と出力電極40が固定されている。入力電極14と出力電極40は例えばフィードスルーで構成されている。
図12は、本発明の実施の形態2に係る半導体装置の入力整合回路基板等の平面図である。第1抵抗体20Aの太さL1は第2抵抗体20Bの太さL2より大きい。このように第1抵抗体20Aの太さと第2抵抗体20Bの太さとを相違させることで、抵抗値の調整が可能となる。また、実施の形態1で説明した第3接続体を設けることで、任意の抵抗値を実現できる。
図13は、本発明の実施の形態3に係る半導体装置の入力整合回路基板等の平面図である。第1抵抗体104は、第1部分104a、第2部分104b及び第3部分104cを備えている。第1部分104aは、第2部分104bと第3部分104cよりは下方にある。そのため、第1接続点P1から第1部分104aまでの距離と、第1接続点P1から第2部分104bまでの距離と、第1接続点P1から第3部分104cまでの距離は実質的に均等となっている。すなわち、第1抵抗体が直線的に形成された場合と比べて第1接続点P1から第1抵抗体の各部分までの距離が均一に近づくように、第1抵抗体104の各部分を配置した。
Claims (6)
- パッケージと、
前記パッケージに固定された入力電極と、
前記パッケージ内に設けられた入力整合回路基板と、
前記入力整合回路基板に形成された伝送線路パターンと、
前記入力整合回路基板に形成された、第1スリットの入った第1抵抗体と、
前記入力整合回路基板に形成された、第2スリットの入った第2抵抗体と、
前記パッケージ内に設けられた増幅器と、
前記入力電極と前記伝送線路パターンを電気的に接続する第1接続体と、
前記伝送線路パターンと前記増幅器を電気的に接続する第2接続体と、を備え、
前記第1スリット及び前記第2スリットには前記伝送線路パターンがあり、
前記第1抵抗体と前記第2抵抗体は、前記第1接続体が前記伝送線路パターンに接する第1接続点と、前記第2接続体が前記伝送線路パターンに接する第2接続点との間にあり、
前記第1スリットと前記第2スリットが対向することを特徴とする半導体装置。 - 前記第1抵抗体と前記第2抵抗体の間には前記伝送線路パターンがあることを特徴とする請求項1に記載の半導体装置。
- 前記第1抵抗体の太さと前記第2抵抗体の太さは等しいことを特徴とする請求項1又は2に記載の半導体装置。
- 前記第1抵抗体の太さと前記第2抵抗体の太さは異なることを特徴とする請求項1又は2に記載の半導体装置。
- パッケージと、
前記パッケージに固定された入力電極と、
前記パッケージ内に設けられた入力整合回路基板と、
前記入力整合回路基板に形成された伝送線路パターンと、
前記入力整合回路基板に形成された第1抵抗体と、
前記入力整合回路基板に形成された第2抵抗体と、
前記パッケージ内に設けられた増幅器と、
前記入力電極と前記伝送線路パターンを電気的に接続する第1接続体と、
前記伝送線路パターンと前記増幅器を電気的に接続する第2接続体と、を備え、
前記第1抵抗体と前記第2抵抗体は、前記第1接続体が前記伝送線路パターンに接する第1接続点と、前記第2接続体が前記伝送線路パターンに接する第2接続点との間にあり、
前記第1抵抗体は、前記第1接続点に対向する第1部分と、前記第1部分の左右に設けられた第2部分と第3部分とを有し、前記第1部分は前記第2部分と前記第3部分に比べて前記第1接続点から後退して設けられ、
前記第2抵抗体は、前記第1接続点に対向する第4部分と、前記第4部分の左右に設けられた第5部分と第6部分とを有し、前記第4部分は前記第5部分と前記第6部分に比べて前記第1接続点から後退して設けられたことを特徴とする半導体装置。 - 前記第1部分、前記第2部分、前記第3部分、前記第4部分、前記第5部分及び前記第6部分は千鳥形に設けられたことを特徴とする請求項5に記載の半導体装置。
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JP2015011586A JP6488720B2 (ja) | 2015-01-23 | 2015-01-23 | 半導体装置 |
US14/931,895 US9508787B2 (en) | 2015-01-23 | 2015-11-04 | Semiconductor device |
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JP2015011586A JP6488720B2 (ja) | 2015-01-23 | 2015-01-23 | 半導体装置 |
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JP2016136685A JP2016136685A (ja) | 2016-07-28 |
JP6488720B2 true JP6488720B2 (ja) | 2019-03-27 |
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Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04252036A (ja) * | 1991-01-10 | 1992-09-08 | Fujitsu Ltd | 半導体装置 |
JPH07307626A (ja) * | 1994-05-12 | 1995-11-21 | Mitsubishi Electric Corp | マイクロ波高出力増幅器 |
JPH10335575A (ja) * | 1997-06-04 | 1998-12-18 | Mitsubishi Electric Corp | 高周波信号伝送線路及びその高周波信号伝送線路を使用した半導体装置 |
JP3504472B2 (ja) | 1997-09-29 | 2004-03-08 | 三菱電機株式会社 | 半導体装置 |
US6518743B1 (en) * | 1998-05-28 | 2003-02-11 | Anritsu Corporation | Wide-band RF signal power detecting element and power detecting device using the same |
JP4663049B2 (ja) * | 1999-07-29 | 2011-03-30 | 三菱電機株式会社 | 電界効果トランジスタ、該電界効果トランジスタを含むモノリシックマイクロ波集積回路、及び設計方法 |
US20020074162A1 (en) * | 2000-12-15 | 2002-06-20 | Bor-Ray Su | Substrate layout method and structure for reducing cross talk of adjacent signals |
JP3735270B2 (ja) * | 2001-05-11 | 2006-01-18 | 松下電器産業株式会社 | 高周波半導体装置 |
JP2003168736A (ja) * | 2001-11-30 | 2003-06-13 | Hitachi Ltd | 半導体素子及び高周波電力増幅装置並びに無線通信機 |
JP2004228989A (ja) * | 2003-01-23 | 2004-08-12 | Renesas Technology Corp | 半導体装置 |
JP2004260364A (ja) * | 2003-02-25 | 2004-09-16 | Renesas Technology Corp | 半導体装置及び高出力電力増幅装置並びにパソコンカード |
JP2013065938A (ja) * | 2011-09-15 | 2013-04-11 | Toshiba Corp | 高周波増幅器 |
JP2013098339A (ja) * | 2011-10-31 | 2013-05-20 | Sumitomo Electric Device Innovations Inc | 高周波回路装置 |
JP6171427B2 (ja) * | 2013-03-13 | 2017-08-02 | 三菱電機株式会社 | 高周波電力増幅器 |
US8957496B2 (en) * | 2013-04-17 | 2015-02-17 | Freescale Semiconductor, Inc. | Integrated circuit chip with discontinuous guard ring |
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2015
- 2015-01-23 JP JP2015011586A patent/JP6488720B2/ja active Active
- 2015-11-04 US US14/931,895 patent/US9508787B2/en active Active
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US9508787B2 (en) | 2016-11-29 |
JP2016136685A (ja) | 2016-07-28 |
US20160218170A1 (en) | 2016-07-28 |
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