CN1256515A - 具有栅格焊球阵列结构的半导体器件及其制造方法 - Google Patents
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Abstract
提供一种半导体器件,该半导体器件具有半导体芯片和连接到半导体芯片焊盘上的连接引线。连接引线有末端部分,该末端部分弯曲到在与焊盘相对一侧的半导体芯片表面上。该半导体器件还包括覆盖半导体芯片的树脂密封部分和设置于连接引线末端部分上的焊球。
Description
本发明涉及具有BGA结构的半导体器件及制造该半导体器件的方法,特别涉及这样一种具有BGA结构的半导体器件及制造该半导体器件的方法,该半导体器件能够防止焊球产生裂缝,并且在半导体器件安装在印刷电路板上的状态下进行下落冲击试验时和温度循环试验时,可防止从印刷电路板传播的冲击。
通常,采用其引线用于连接端的半导体器件。图1是展示其引线被用作连接端的半导体器件的剖面图。
如图1所示,在其引线被用作连接端的半导体器件50中,配备有半导体芯片71,在该半导体芯片71上,与半导体芯片71的上表面平行地排列多个连接引线73的内引线73a。用包括绝缘体的粘接胶带79粘接并固定半导体芯片71和连接引线73的内引线73a。并且,用金属线76电连接形成于半导体芯片71的上表面中心部分上的焊盘75和连接引线的内引线73a。
覆盖半导体芯片71、粘接胶带79、连接引线73的内引线73a、焊盘75和金属线76,结果就形成树脂密封部分72。并且,从树脂密封部分72伸出连接引线73的外引线73b并弯曲,外引线73b的末端排列在树脂密封部分72的下表面下。
在以这种方式构成的半导体器件50中,用焊接等方法固定外引线73b的末端并将其电连接到印刷电路板的预定部位上,从而在印刷电路板上设置半导体器件50。
可是,在半导体器件50中,由于连接端由引线构成,因而在连接端连接于印刷电路板上的情况下,在用焊料将连接端连接于印刷电路板上之前,需要分开准备焊料等。因而这种半导体器件存在连接操作麻烦的缺点。
作为克服该缺点的半导体器件,可采用BGA(栅格焊球阵列)结构。用具有包括焊料之类的连接引线的球构成BGA结构。下面将说明具有BGA结构的两种半导体器件。
图2A是展示公开于美国专利USP 5,677,566中的具有BGA结构的半导体器件的透视图,图2B是这种半导体器件的剖面图。如图2A和2B所示,在具有BGA结构110的第一常规半导体器件中,设置管芯焊盘140并在其上设置半导体芯片114。并且,用金属线122电连接多个连接引线115和形成于半导体芯片114上表面的端部上的焊盘118。此外,允许焊球128分别粘接于连接引线115的上表面上。一部分焊球128和连接引线115露出,同时另一部分与管芯焊盘140、半导体芯片114、焊盘118和金属线122一起被覆盖,从而形成树脂密封部分126。
在按这种方式构成的具有BGA结构的第一半导体器件110中,允许焊球128与印刷电路板的预定位置接触。因而利用使焊球128与印刷电路板的预定位置接触的回流法,加热或加压焊球128,使其熔化,将半导体器件固定于印刷电路板的预定位置上,同时,与印刷电路板电连接并粘贴于印刷电路板上。
图3A是展示公开于日本未审查专利公开平9-213839中的具有BGA结构的半导体器件的透视图,图3B是其剖面图。如图3A和3B所示,在具有BGA结构的第二常规半导体器件150中,设置半导体芯片151。在半导体芯片151上,多个连接引线的内引线155与半导体芯片151的上表面平行地排列。用包括绝缘体的粘接胶带152粘接和固定半导体芯片151和连接引线的内引线155。并且,用金属线154电连接形成在半导体芯片151上表面上的多个焊盘153和连接引线的内引线155。
此外,用包括密封树脂的上封装件156和下封装件157覆盖半导体芯片151、粘接胶带152、连接引线的内引线155、焊盘153和布线154,形成树脂密封部分。在下封装件157的内引线侧的表面位置上内引线155通过处设置小孔。在小孔内,按下列方式嵌入多个焊球158,即从下封装件157的表面伸出的各头部用作外部连接端。该焊球158与内引线155电连接。
在按这种方式构成的具有BGA结构的第二常规半导体器件150中,按与具有BGA结构的第一常规半导体器件110相同的方式,利用使焊球158与印刷电路板的预定位置接触的回流法,加热或加压焊球158,使其熔化,将半导体器件固定于印刷电路板169的预定位置上,同时半导体器件与印刷电路板169电连接并粘贴于印刷电路板169上。
可是,如上所述,在具有BGA结构的第一常规半导体器件110和具有BGA结构150的第二常规半导体器件中,焊球嵌入树脂密封部分中。结果,在焊球固定于印刷电路板上的状态下进行下落冲击试验时和温度循环试验时,冲击通过焊球传到树脂密封部分,而不能缓解从印刷电路板传播的冲击。由于从树脂密封部分施加作为反作用力的冲击,因而有在焊球与印刷电路板的粘接表面上和树脂密封部分的粘接表面上产生裂缝的问题。
本发明的目的在于提供具有BGA结构的半导体器件及其制造方法,该器件能够防止焊球产生裂缝,并且在焊球固定在印刷电路板上的状态下进行下落冲击试验时和温度循环试验时,可防止从印刷电路板传播冲击。
根据本发明的一个方面,提供一种半导体器件,该半导体器件具有半导体芯片和连接到半导体芯片的焊盘上的连接引线。连接引线有末端部分,该末端部分弯曲到在与焊盘相对一侧的半导体芯片表面上。该半导体器件还包括覆盖半导体芯片的树脂密封部分和设置于连接引线末端部分上的焊球。
根据本发明的另一个方面,提供一种半导体器件,该半导体器件具有半导体芯片和连接到半导体芯片的焊盘上的连接引线。连接引线有向后弯曲的末端部分。该半导体器件还包括覆盖半导体芯片的树脂密封部分和设置于连接引线末端部分上的焊球。
根据本发明的又一个方面,提供一种半导体器件,该半导体器件具有半导体芯片和连接到半导体芯片的焊盘上的连接引线。连接引线有向后弯曲的末端部分。该半导体器件还包括覆盖半导体芯片的树脂密封部分、设置于连接引线末端部分的引线树脂部分和设置于引线树脂部分上的焊球。
按照本发明,在焊球设置于印刷电路板上的状态下进行下落冲击试验和温度循环试验时,从印刷电路板传播到焊球的冲击由于连接引线的弹性变形而被吸收。从而可防止经过这样的试验程序在焊球上产生裂缝。
最好在与树脂部分相对的一侧,在连接引线的末端部分上设置缓冲件。通过这种结构,在上述下落冲击试验时和温度循环试验时,用弹性变形不能完全吸收从印刷电路板向焊球传播的冲击,因缓冲件设置在与树脂密封部分相对的表面上,因而可吸收传播到树脂密封部分的冲击。结果,因反作用力可缓解从树脂密封部分施加给焊球的冲击。由此,在冲击不能被连接引线的弹性变形吸收的情况下,可防止在焊球上产生裂缝。
在这种情况下,可用从包括硅树脂带、热固性树脂带和热塑性带的组中选择的一种材料构成上述缓冲件。
根据本发明的再一方面,提供一种具有BGA结构的半导体器件的制造方法,该方法包括连接连接引线与半导体芯片焊盘的步骤。然后,形成覆盖半导体芯片的树脂密封部分。接着,将连接引线切割到预定长度。随后向后弯曲连接引线的末端部分。在连接引线的末端部分上设置焊球。
本发明的半导体器件制造方法优选包括如下步骤:在切割连接引线的步骤之前,在与树脂密封部分相对的一侧,在连接引线的末端部分上设置缓冲件。
并且,在上述半导体器件制造方法中,所述设置缓冲件的步骤允许在将连接引线切割为预定长度的步骤之前,在连接引线的预定位置设置缓冲件。
图1是展示引线用作连接端的半导体器件的剖面图。
图2A是展示公开于美国专利USP 5677566中的具有BGA结构的半导体器件的透视图。
图2B是其剖面图。
图3A是展示公开于日本未审查专利公开平9-213839中的具有BGA结构的半导体器件的透视图。
图3B是其剖面图。
图4A是展示按照本发明第一实施例的具有BGA结构的半导体器件的整体剖面图。
图4B是其局部剖面图。
图5是展示按照本发明第一实施例的具有BGA结构的半导体器件的平面图。
图6A-6D是展示按照本发明第一实施例的具有BGA结构的半导体器件制造方法的步骤顺序的剖面图。
图7A是展示按照本发明第二实施例的具有BGA结构的半导体器件的整体剖面图。
图7B是其局部剖面图。
图8A是展示按照本发明第三实施例的具有BGA结构的半导体器件的整体剖面图。
图8B是其局部剖面图。
图9是展示按照本发明第四实施例的具有BGA结构的半导体器件的剖面图。
图10A是展示按照本发明第五实施例的具有BGA结构的半导体器件的整体平面图。
图10B是其剖面图。
图11A-11D是展示按照本发明第五实施例的具有BGA结构的半导体器件制造方法的步骤顺序的剖面图。
下面参照附图具体解释具有BGA结构的半导体器件及其制造方法。图4A是展示按照本发明第一实施例的具有BGA结构的半导体器件的整体剖面图。图4B是其局部剖面图。图5是也是其平面图。顺便指出,左半边是其顶视图,而右半边是其底视图,图5中省略一部分树脂密封部分。
如图4A、4B和5所示,按照本发明第一实施例的具有BGA结构的半导体器件1有半导体芯片21。在半导体芯片21上,与半导体芯片21的上表面平行地排列多个连接引线23的内引线23a。用包括硅树脂型或环氧树脂型绝缘体的粘接胶带粘接并固定半导体芯片21和连接引线23的内引线23a。并且,利用金属线键合法,用金属线26电连接多个焊盘25和连接引线23的内引线23a。
覆盖半导体芯片21、粘接胶带29、连接引线23的内引线23a、焊盘25和金属线26,形成树脂密封部分22。此外,允许连接引线23的外引线23b从树脂密封部分22延伸并进行弯曲。按如下方式设置外引线23b的末端部分:即相对于外引线23b交替地改变各末端部分的位置,使其与树脂密封部分22的下表面22a的下方相邻。顺便指出,在外引线23b与树脂密封部分的下表面22a相对的表面上,粘接硅树脂带30,树脂带30与下表面22a有一间隔。在该实施例中,使用硅树脂带,但本发明并不限于此。例如,也可使用热固性树脂带或热塑性树脂带。
此外,在各外引线23b的末端部分上,分别形成焊接区(land)12。在各焊接区12,分别粘接焊球28。为了改进焊料的浸润性,处理外引线23b的末端部分的表面。
利用使焊球28与印刷电路板的预定位置接触和加热或加压焊球28使其熔化的回流法,将半导体器件固定到印刷电路板的预定位置上,同时,将半导体器件电连接并附着于印刷电路板上。顺便指出,在组装之后,从连接引线23切断用于连接各连接引线23的系带(tie-bar)11。
下面附带地展示本实施例的主要测量参数。树脂密封部分22的厚度可以为300μm,树脂密封部分22的厚度可以为725μm,粘接胶带29的厚度可以为50μm,连接引线23的厚度可以为125μm,金属线26的外径可以为25-30μm,在内引线23a的上表面与树脂密封部分的上表面之间的距离可以为150μm,在半导体芯片21的下表面与树脂密封部分下表面22a之间的距离可以为100μm,在树脂密封部分的上表面22b与外引线23b的下表面之间的距离至多可以为900μm,在树脂密封部分的下表面22a与外引线23b的上表面之间的距离可以为50μm,焊接区12的外径可以为350μm,焊球28的外径可以为400-450μm,在外引线23b延伸的方向上相邻焊球28之间的距离可以为800μm,焊接区12的下表面与焊球28的下端部之间的距离可以为300μm,树脂密封部分的上表面22b与焊球28的下端部之间的距离至多可以为1200μm,半导体芯片21侧面与边界23c之间的水平距离可以为200μm,边界23c与外引线23b的弯曲部分之间的水平方向上的距离可以为200μm,边界23c与系带11之间的距离可以为200μm,系带11的宽度可以为80μm。
下面,详细说明按照本发明第一实施例的具有栅格焊球阵列结构的半导体器件的制造方法。图6A-6D是展示按照本发明第一实施例的具有栅格焊球阵列(BGA)结构的半导体器件制造方法的步骤顺序的剖面图。
首先,如图6A所示,在半导体芯片21的上表面上,粘接和固定用粘接胶带29连接于引线框上的连接引线23。
接着,如图6B所示,利用金属线键合(wire bonding)法,用金属线26将形成于半导体芯片21上表面中心部分的焊盘25与连接引线23电连接。
此后,如图6C所示,利用模具覆盖半导体芯片21、粘接胶带29、连接引线23、焊盘25和金属线26,形成树脂密封部分22。此时,使连接引线23的一部分(外引线23b)从树脂密封部分22伸出。然后,在外引线23b的下表面上,粘接硅树脂带30,将外引线23b切割为预定长度。此时,连接引线23与引线框分离。
接着,如图6D所示,使外引线23b向后弯曲,并以这样的方式设置硅树脂带30,即在树脂密封部分的下表面22a与外引线23b之间形成间隔。然后,在外引线23b的末端部分形成焊接区12。为了改善外引线23b末端部分的浸润性,处理外引线23b末端部分的表面。在焊接区12的下表面上粘接焊球28。接着,从连接引线23切割连接连接引线23的系带11。以这种方式,可以制备具有BGA结构的半导体器件1。
在以这种方式构成的本发明第一实施例的具有BGA结构的半导体器件1中,在半导体器件粘附于印刷电路板上的状态下进行下落冲击试验时和温度循环试验时,因连接引线23的弹性变形而吸收从印刷电路板传播到焊球28的冲击。经过这样的程序,可防止在焊球上产生的裂缝。
即使在从印刷电路板传播到焊球的冲击不能被连接引线23的弹性变形充分吸收的情况下,因硅树脂带30设置于与树脂密封部分下表面22a相对的表面上,因而连接引线23的末端部分也不与树脂密封部分的下表面22a接触。由此,可吸收传播到树脂密封部分22的冲击,结果是可减小因反作用力从树脂密封部分22施加给焊球28的冲击。这样,即使在连接引线23的弹性变形不足以吸收冲击的时候,也能够防止在焊球28上产生裂缝。
顺便指出,按照本发明的第一实施例,在半导体芯片21的上表面中心部分上形成了多个焊盘25,在树脂密封部分下表面22a的下方形成了焊球28,但本发明并不局限于这种结构。下面说明本发明的另一实施例。
图7A是展示按照本发明第二实施例的具有BGA结构的半导体器件的整体剖面图。图7B是该半导体器件的局部剖面图。如图7A和7B所示,在按照本发明第二实施例的具有BGA结构的半导体器件2中,在半导体芯片21上表面的端部形成多个焊盘25。用金属线26使这些焊盘25和连接引线23的内引线23a电连接。本实施例的其它方面与按照本发明第一实施例的具有BGA结构的半导体器件1相同,因而省略其说明。
图8A是展示按照本发明第三实施例的具有BGA结构的半导体器件的整体剖面图。图8B是其局部剖面图。如图8A和8B所示,在按照本发明第三实施例的具有BGA结构的半导体器件3中,在半导体芯片21下表面端部形成多个焊盘25。用金属线26使这些焊盘25和连接引线23的内引线23a电连接。
顺便指出,如下所述,在第三实施例中部件的主要测量与第一实施例的对应物不同。在内引线23a的上表面与树脂密封部分的上表面22b之间的距离可以为100μm,在半导体芯片21的下表面与树脂密封部分22下表面22a之间的距离可以为150μm,在半导体芯片21侧面与边界23c之间的水平距离可以为600μm。
其它结构和参数情况与按照本发明第一实施例的具有BGA结构的半导体器件1相同,因而省略其说明。
按照这种方式,第二和第三实施例可以提供与第一实施例相同的效果。
图9是展示按照本发明第四实施例的具有BGA结构的半导体器件的剖面图。如图9所示,在按照本发明第四实施例的具有BGA结构的半导体器件4中,连接引线的外引线23b从树脂密封部分22延伸以进行弯曲。外引线23b设置在树脂密封部分22的上表面上。在外引线23b的表面上,与密封部分的上表面22b相对,粘接硅树脂带30。分别在外引线23b各末端部分上形成焊接区12。本实施例的其它方面与按照本发明第一实施例的具有BGA结构的半导体器件1相同,因而省略其说明。
在按照本发明以这种方式构成器件的具有BGA结构的半导体器件4中,焊球28可设置于树脂密封部分22上,同时,可获得与第一实施例相同的效果。
图10A是展示按照本发明第五实施例的具有BGA结构的半导体器件的整体示意图。图10B是图10A所示半导体器件的剖面图。在按照第五实施例的具有BGA结构的半导体器件中,引线从树脂密封部分22延伸,在引线的末端部分形成引线树脂部分40。与形成树脂密封部分22相同地形成引线树脂部分40。在引线树脂部分40上键合焊球28。本实施例的引线树脂部分40分别密封两根引线,但可以任意设定引线的数量。
图11A-11D是展示按照本发明第五实施例的具有BGA结构的半导体器件制造方法的步骤顺序的剖面图。
首先,如图11A所示,在半导体芯片21的上表面上,用粘接胶带29粘接和固定连接于引线框上的连接引线23。
接着,如图11B所示,用金属线26电连接形成于半导体芯片21上表面中心部分的焊盘25与连接引线23。
此后,如图11C所示,利用模具覆盖半导体芯片21、粘接胶带29、连接引线23、焊盘25和金属线26,由此形成树脂密封部分22。此时,用树脂密封连接引线23的一部分(外引线23b),形成引线树脂部分40。然后,用诸如激光之类的方法使引线树脂部分40形成开口,形成焊球孔28a。利用采用激光等的切割方法,一根接一根或按多根引线一组的方式切割引线树脂部分40。
接着,如图11D所示,使外引线23b向后方弯曲,并将引线树脂部分40设置成为使树脂密封部分22的下表面与外引线23b之间形成间隔。然后,再利用回流法,在各引线树脂部分40上粘附并连接焊球28。
在按照本发明第五实施例的半导体芯片中,不将引线装上窄带(taping),并在进行封装主体的树脂密封的同时进行引线树脂的密封。结果,不需要装窄带的处理成本和材料成本,可按低成本制造引线树脂。并且,进行树脂密封的所有树脂不用于形成封装。相应于模具的树脂沟道的部分和树脂片(tablet)的部分被认为是不需要的并且被弃之。这样,仅通过减少被抛弃的部分就足以提供引线树脂。因此,不会增加影响材料成本的树脂量。
并且,如果仅将该封装件装在布线基片等上,用激光等切割用于固定引线的树脂,那么由于在封装件与布线基片之间的热膨胀率不同,会在焊球中产生裂缝或使焊球开裂。在第五实施例中,由于分开了引线固定树脂,引线的移动可吸收热膨胀率,从而防止在焊球中产生裂缝和损坏焊球本身。
按照本发明,以这些方式,在半导体器件粘附于印刷电路板上的状态下进行下落冲击试验时和温度循环试验时,因连接引线23的弹性变形可吸收从印刷电路板传播到焊球28的冲击。因此可防止在焊球上产生裂缝。
Claims (10)
1.一种具有栅格焊球阵列结构的半导体器件,包括:
半导体芯片;
连接到所述半导体芯片的焊盘上的连接引线,所述连接引线有末端部分,末端部分弯曲到在与所述焊盘相对一侧的所述半导体芯片表面上;
覆盖所述半导体芯片的树脂密封部分;和
设置于所述连接引线的所述末端部分上的焊球。
2.一种具有栅格焊球阵列结构的半导体器件,包括:
半导体芯片;
连接到所述半导体芯片的焊盘上的连接引线,所述连接引线有向后弯曲的末端部分;
覆盖所述半导体芯片的树脂密封部分;和
设置于所述连接引线的所述末端部分上的焊球。
3.一种具有栅格焊球阵列结构的半导体器件,包括:
半导体芯片;
连接到所述半导体芯片的焊盘上的连接引线,所述连接引线有向后弯曲的末端部分;
覆盖所述半导体芯片的树脂密封部分;
设置于所述连接引线的所述末端部分的引线树脂部分;和
设置于所述引线树脂部分上的焊球。
4.按照权利要求1的具有栅格焊球阵列结构的半导体器件,还包括:在与所述树脂密封部分相对的一侧,设置于所述连接引线的所述末端部分上的缓冲件。
5.按照权利要求2的具有栅格焊球阵列结构的半导体器件,还包括:在与所述树脂密封部分相对的一侧,设置于所述连接引线的所述末端部分上的缓冲件。
6.按照权利要求4的具有栅格焊球阵列结构的半导体器件,其中所述缓冲件由从包括硅树脂带、热固性带和热塑性带的组中选出的一种带构成。
7.按照权利要求5的具有栅格焊球阵列结构的半导体器件,其中所述缓冲件由从包括硅树脂带、热固性带和热塑性带的组中选出的一种带构成。
8.一种具有栅格焊球阵列结构的半导体器件的制造方法,包括下列步骤:
连接连接引线与半导体芯片的焊盘;
形成覆盖所述半导体芯片的树脂密封部分;
将所述连接引线切割成预定长度;
向后弯曲所述连接引线的末端部分;和
在所述连接引线的所述末端部分上设置焊球。
9.按照权利要求8的具有栅格焊球阵列结构的半导体器件的制造方法,还包括如下步骤:在切割所述连接引线的步骤之前,在与所述树脂密封部分相对的一侧,在所述连接引线的所述末端部分上设置缓冲件。
10.一种具有栅格焊球阵列结构的半导体器件的制造方法,包括下列步骤:
连接连接引线与半导体芯片的焊盘;
形成覆盖所述半导体芯片的树脂密封部分,和在所述连接引线外的外引线部分形成引线树脂部分;
切割所述连接引线到预定长度;
向后弯曲所述连接引线的末端部分;和
在所述连接引线的所述末端部分上设置焊球。
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JP349200/1998 | 1998-12-08 | ||
JP34920098 | 1998-12-08 | ||
JP28377599A JP2000232182A (ja) | 1998-12-08 | 1999-10-05 | Bga構造の半導体装置及びその製造方法 |
JP283775/1999 | 1999-10-05 |
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CN1256515A true CN1256515A (zh) | 2000-06-14 |
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CN99125420A Pending CN1256515A (zh) | 1998-12-08 | 1999-12-07 | 具有栅格焊球阵列结构的半导体器件及其制造方法 |
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US (1) | US6331738B1 (zh) |
JP (1) | JP2000232182A (zh) |
KR (1) | KR100353105B1 (zh) |
CN (1) | CN1256515A (zh) |
TW (1) | TW434861B (zh) |
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CN101546743B (zh) * | 2008-03-26 | 2012-11-14 | 日本电气株式会社 | 半导体器件的安装结构体及使用安装结构体的电子设备 |
CN103021891A (zh) * | 2012-12-27 | 2013-04-03 | 中国电子科技集团公司第四十一研究所 | 一种混合集成电路金属化互联方法 |
WO2017066930A1 (en) * | 2015-10-21 | 2017-04-27 | GM Global Technology Operations LLC | Systems and methods for reinforced adhesive bonding using textured solder elements |
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JP2001156237A (ja) * | 1999-11-25 | 2001-06-08 | Mitsubishi Electric Corp | リードフレーム及びそれを用いた樹脂封止型半導体装置 |
KR20020090419A (ko) * | 2001-05-25 | 2002-12-05 | 헵시바디지텍 주식회사 | 전력선 통신을 이용한 전광판의 디스플레이 데이타 전송장치 |
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- 1999-11-19 US US09/444,232 patent/US6331738B1/en not_active Expired - Fee Related
- 1999-12-07 KR KR1019990055370A patent/KR100353105B1/ko not_active IP Right Cessation
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CN101546743B (zh) * | 2008-03-26 | 2012-11-14 | 日本电气株式会社 | 半导体器件的安装结构体及使用安装结构体的电子设备 |
CN103021891A (zh) * | 2012-12-27 | 2013-04-03 | 中国电子科技集团公司第四十一研究所 | 一种混合集成电路金属化互联方法 |
CN103021891B (zh) * | 2012-12-27 | 2017-04-26 | 中国电子科技集团公司第四十一研究所 | 一种混合集成电路金属化互联方法 |
WO2017066930A1 (en) * | 2015-10-21 | 2017-04-27 | GM Global Technology Operations LLC | Systems and methods for reinforced adhesive bonding using textured solder elements |
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JP2000232182A (ja) | 2000-08-22 |
TW434861B (en) | 2001-05-16 |
KR100353105B1 (ko) | 2002-09-16 |
US6331738B1 (en) | 2001-12-18 |
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