CN1244731A - 半导体集成电路及其制造方法 - Google Patents
半导体集成电路及其制造方法 Download PDFInfo
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- CN1244731A CN1244731A CN99111786A CN99111786A CN1244731A CN 1244731 A CN1244731 A CN 1244731A CN 99111786 A CN99111786 A CN 99111786A CN 99111786 A CN99111786 A CN 99111786A CN 1244731 A CN1244731 A CN 1244731A
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/18—Peripheral circuit regions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP226663/1998 | 1998-08-11 | ||
JP22666398A JP4030198B2 (ja) | 1998-08-11 | 1998-08-11 | 半導体集積回路装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1244731A true CN1244731A (zh) | 2000-02-16 |
CN100459132C CN100459132C (zh) | 2009-02-04 |
Family
ID=16848717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991117867A Expired - Lifetime CN100459132C (zh) | 1998-08-11 | 1999-08-11 | 半导体集成电路的制造方法 |
Country Status (8)
Country | Link |
---|---|
US (4) | US6436753B1 (zh) |
EP (1) | EP0980101A3 (zh) |
JP (1) | JP4030198B2 (zh) |
KR (1) | KR100612756B1 (zh) |
CN (1) | CN100459132C (zh) |
MY (1) | MY133113A (zh) |
SG (1) | SG75973A1 (zh) |
TW (1) | TW432678B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100426526C (zh) * | 2002-09-10 | 2008-10-15 | 日本电气株式会社 | 薄膜半导体装置及其制造方法 |
CN104078427B (zh) * | 2013-03-26 | 2017-02-08 | 中芯国际集成电路制造(上海)有限公司 | 一种sram存储器及其制备方法 |
Families Citing this family (65)
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JP2001127270A (ja) * | 1999-10-27 | 2001-05-11 | Nec Corp | 半導体装置及びその製造方法 |
JP4142228B2 (ja) * | 2000-02-01 | 2008-09-03 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP4772183B2 (ja) * | 2000-11-30 | 2011-09-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
TWI230392B (en) | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
JP4313986B2 (ja) * | 2002-06-05 | 2009-08-12 | パナソニック株式会社 | 半導体集積回路とその製造方法 |
JP4030839B2 (ja) * | 2002-08-30 | 2008-01-09 | スパンション エルエルシー | メモリ集積回路装置の製造方法 |
US20040228168A1 (en) | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
JP4002219B2 (ja) * | 2003-07-16 | 2007-10-31 | 株式会社ルネサステクノロジ | 半導体装置及び半導体装置の製造方法 |
US7335934B2 (en) | 2003-07-22 | 2008-02-26 | Innovative Silicon S.A. | Integrated circuit device, and method of fabricating same |
US7141468B2 (en) * | 2003-10-27 | 2006-11-28 | Texas Instruments Incorporated | Application of different isolation schemes for logic and embedded memory |
KR100587669B1 (ko) * | 2003-10-29 | 2006-06-08 | 삼성전자주식회사 | 반도체 장치에서의 저항 소자 형성방법. |
JP2005167081A (ja) * | 2003-12-04 | 2005-06-23 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2005302231A (ja) | 2004-04-15 | 2005-10-27 | Toshiba Corp | スタティックランダムアクセスメモリ |
US7606066B2 (en) | 2005-09-07 | 2009-10-20 | Innovative Silicon Isi Sa | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
KR100719219B1 (ko) * | 2005-09-20 | 2007-05-16 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US7683430B2 (en) | 2005-12-19 | 2010-03-23 | Innovative Silicon Isi Sa | Electrically floating body memory cell and array, and method of operating or controlling same |
JP4855786B2 (ja) * | 2006-01-25 | 2012-01-18 | 株式会社東芝 | 半導体装置 |
US7492632B2 (en) | 2006-04-07 | 2009-02-17 | Innovative Silicon Isi Sa | Memory array having a programmable word length, and method of operating same |
WO2007128738A1 (en) | 2006-05-02 | 2007-11-15 | Innovative Silicon Sa | Semiconductor memory cell and array using punch-through to program and read same |
US8069377B2 (en) | 2006-06-26 | 2011-11-29 | Micron Technology, Inc. | Integrated circuit having memory array including ECC and column redundancy and method of operating the same |
US7542340B2 (en) | 2006-07-11 | 2009-06-02 | Innovative Silicon Isi Sa | Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same |
JP2008042059A (ja) * | 2006-08-09 | 2008-02-21 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR101277402B1 (ko) | 2007-01-26 | 2013-06-20 | 마이크론 테크놀로지, 인코포레이티드 | 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 dram 트랜지스터 |
US8518774B2 (en) | 2007-03-29 | 2013-08-27 | Micron Technology, Inc. | Manufacturing process for zero-capacitor random access memory circuits |
US8064274B2 (en) | 2007-05-30 | 2011-11-22 | Micron Technology, Inc. | Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same |
US8085594B2 (en) | 2007-06-01 | 2011-12-27 | Micron Technology, Inc. | Reading technique for memory cell with electrically floating body transistor |
JP2009032793A (ja) * | 2007-07-25 | 2009-02-12 | Panasonic Corp | イオン注入方法および半導体装置の製造方法 |
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JP3419597B2 (ja) * | 1995-07-11 | 2003-06-23 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
TW435007B (en) | 1996-04-08 | 2001-05-16 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH10256539A (ja) * | 1997-03-10 | 1998-09-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPH11354652A (ja) * | 1998-06-09 | 1999-12-24 | Mitsubishi Electric Corp | 半導体装置 |
JP3718058B2 (ja) * | 1998-06-17 | 2005-11-16 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
TW448537B (en) * | 1999-10-29 | 2001-08-01 | Taiwan Semiconductor Mfg | Manufacturing method of shallow trench isolation |
-
1998
- 1998-08-11 JP JP22666398A patent/JP4030198B2/ja not_active Expired - Lifetime
-
1999
- 1999-07-19 SG SG1999003487A patent/SG75973A1/en unknown
- 1999-07-29 MY MYPI99003214A patent/MY133113A/en unknown
- 1999-07-30 EP EP99306081A patent/EP0980101A3/en not_active Withdrawn
- 1999-08-05 TW TW088113383A patent/TW432678B/zh not_active IP Right Cessation
- 1999-08-09 KR KR1019990032506A patent/KR100612756B1/ko not_active IP Right Cessation
- 1999-08-11 CN CNB991117867A patent/CN100459132C/zh not_active Expired - Lifetime
- 1999-08-11 US US09/372,007 patent/US6436753B1/en not_active Expired - Lifetime
-
2002
- 2002-05-31 US US10/157,978 patent/US6559006B2/en not_active Expired - Lifetime
-
2003
- 2003-03-06 US US10/379,543 patent/US6753231B2/en not_active Expired - Lifetime
-
2004
- 2004-04-08 US US10/820,128 patent/US20040191991A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100426526C (zh) * | 2002-09-10 | 2008-10-15 | 日本电气株式会社 | 薄膜半导体装置及其制造方法 |
CN104078427B (zh) * | 2013-03-26 | 2017-02-08 | 中芯国际集成电路制造(上海)有限公司 | 一种sram存储器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US6559006B2 (en) | 2003-05-06 |
CN100459132C (zh) | 2009-02-04 |
US20030153147A1 (en) | 2003-08-14 |
EP0980101A3 (en) | 2004-11-03 |
SG75973A1 (en) | 2000-10-24 |
US6436753B1 (en) | 2002-08-20 |
KR20000017183A (ko) | 2000-03-25 |
TW432678B (en) | 2001-05-01 |
JP2000058675A (ja) | 2000-02-25 |
JP4030198B2 (ja) | 2008-01-09 |
US20040191991A1 (en) | 2004-09-30 |
MY133113A (en) | 2007-10-31 |
US6753231B2 (en) | 2004-06-22 |
EP0980101A2 (en) | 2000-02-16 |
KR100612756B1 (ko) | 2006-08-18 |
US20020155657A1 (en) | 2002-10-24 |
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