CN1237767A - 半导体存储器件 - Google Patents
半导体存储器件 Download PDFInfo
- Publication number
- CN1237767A CN1237767A CN99107446A CN99107446A CN1237767A CN 1237767 A CN1237767 A CN 1237767A CN 99107446 A CN99107446 A CN 99107446A CN 99107446 A CN99107446 A CN 99107446A CN 1237767 A CN1237767 A CN 1237767A
- Authority
- CN
- China
- Prior art keywords
- ring oscillator
- storage unit
- voltage
- word line
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 230000000630 rising effect Effects 0.000 claims description 30
- 230000003068 static effect Effects 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 12
- 230000010355 oscillation Effects 0.000 claims description 9
- 238000004904 shortening Methods 0.000 claims description 5
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP138757/98 | 1998-05-20 | ||
JP13875798A JPH11328973A (ja) | 1998-05-20 | 1998-05-20 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1237767A true CN1237767A (zh) | 1999-12-08 |
CN100389469C CN100389469C (zh) | 2008-05-21 |
Family
ID=15229481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991074467A Expired - Fee Related CN100389469C (zh) | 1998-05-20 | 1999-05-19 | 半导体存储器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6137732A (zh) |
JP (1) | JPH11328973A (zh) |
KR (1) | KR100328331B1 (zh) |
CN (1) | CN100389469C (zh) |
TW (1) | TW425549B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100461299C (zh) * | 2004-10-07 | 2009-02-11 | 海力士半导体有限公司 | 内部电压提供电路 |
CN106409340A (zh) * | 2015-05-01 | 2017-02-15 | 拉碧斯半导体株式会社 | 写入电压生成电路以及存储器装置 |
CN106601289A (zh) * | 2011-09-22 | 2017-04-26 | 瑞萨电子株式会社 | 半导体装置 |
CN107545913A (zh) * | 2016-06-24 | 2018-01-05 | 拉碧斯半导体株式会社 | 电压供给电路以及半导体存储装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3303823B2 (ja) * | 1999-02-23 | 2002-07-22 | 日本電気株式会社 | 電源回路 |
US6292406B1 (en) * | 2000-07-03 | 2001-09-18 | Advanced Micro Devices, Inc. | Method and low-power circuits used to generate accurate boosted wordline voltage for flash memory core cells in read mode |
JP2003168959A (ja) * | 2001-11-30 | 2003-06-13 | Sharp Corp | 発振回路、昇圧回路、不揮発性記憶装置、および半導体装置 |
US7333357B2 (en) * | 2003-12-11 | 2008-02-19 | Texas Instruments Incorproated | Static random access memory device having reduced leakage current during active mode and a method of operating thereof |
US8248842B2 (en) * | 2005-01-25 | 2012-08-21 | Samsung Electronics Co., Ltd. | Memory cell array biasing method and a semiconductor memory device |
KR100680441B1 (ko) * | 2005-06-07 | 2007-02-08 | 주식회사 하이닉스반도체 | 안정적인 승압 전압을 발생하는 승압 전압 발생기 |
KR100765439B1 (ko) | 2006-04-11 | 2007-10-11 | 경북대학교 산학협력단 | 이중 승압 셀 바이어스 기법을 이용한 스태틱 램 |
US9379604B2 (en) * | 2013-01-29 | 2016-06-28 | Rf Micro Devices, Inc. | Low noise radio frequency switching circuitry |
US9460778B2 (en) | 2013-08-15 | 2016-10-04 | Samsung Electronics Co., Ltd. | Static random access memory with bitline boost |
JP6510288B2 (ja) | 2015-03-30 | 2019-05-08 | ローム株式会社 | チャージポンプ回路 |
CN112349320A (zh) * | 2019-08-06 | 2021-02-09 | 长鑫存储技术有限公司 | 字线驱动电路及存储单元 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3112019B2 (ja) * | 1989-12-08 | 2000-11-27 | 株式会社日立製作所 | 半導体装置 |
JP3228759B2 (ja) * | 1990-01-24 | 2001-11-12 | セイコーエプソン株式会社 | 半導体記憶装置及びデータ処理装置 |
JPH05120882A (ja) * | 1991-10-29 | 1993-05-18 | Hitachi Ltd | 半導体記憶装置 |
JPH05313795A (ja) * | 1992-05-12 | 1993-11-26 | Nec Ic Microcomput Syst Ltd | 半導体集積回路 |
JP3170038B2 (ja) * | 1992-05-19 | 2001-05-28 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JPH06152334A (ja) * | 1992-11-06 | 1994-05-31 | Mitsubishi Electric Corp | リングオシレータおよび定電圧発生回路 |
US5555204A (en) * | 1993-06-29 | 1996-09-10 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
JP3626221B2 (ja) * | 1993-12-13 | 2005-03-02 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JPH08147219A (ja) * | 1994-09-22 | 1996-06-07 | Toshiba Microelectron Corp | 不揮発性半導体記憶装置 |
US5838613A (en) * | 1994-09-22 | 1998-11-17 | Kabushiki Kaisha Toshiba | Semiconductor memory device having security function |
JP3497601B2 (ja) * | 1995-04-17 | 2004-02-16 | 松下電器産業株式会社 | 半導体集積回路 |
JPH1145574A (ja) * | 1997-07-25 | 1999-02-16 | Nec Corp | 半導体記憶装置 |
-
1998
- 1998-05-20 JP JP13875798A patent/JPH11328973A/ja active Pending
-
1999
- 1999-05-17 US US09/313,078 patent/US6137732A/en not_active Expired - Lifetime
- 1999-05-19 TW TW088108209A patent/TW425549B/zh not_active IP Right Cessation
- 1999-05-19 KR KR1019990018064A patent/KR100328331B1/ko not_active IP Right Cessation
- 1999-05-19 CN CNB991074467A patent/CN100389469C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100461299C (zh) * | 2004-10-07 | 2009-02-11 | 海力士半导体有限公司 | 内部电压提供电路 |
CN106601289A (zh) * | 2011-09-22 | 2017-04-26 | 瑞萨电子株式会社 | 半导体装置 |
CN106601289B (zh) * | 2011-09-22 | 2020-09-04 | 瑞萨电子株式会社 | 半导体装置 |
CN106409340A (zh) * | 2015-05-01 | 2017-02-15 | 拉碧斯半导体株式会社 | 写入电压生成电路以及存储器装置 |
CN106409340B (zh) * | 2015-05-01 | 2021-07-02 | 拉碧斯半导体株式会社 | 写入电压生成电路以及存储器装置 |
CN107545913A (zh) * | 2016-06-24 | 2018-01-05 | 拉碧斯半导体株式会社 | 电压供给电路以及半导体存储装置 |
Also Published As
Publication number | Publication date |
---|---|
KR19990088406A (ko) | 1999-12-27 |
JPH11328973A (ja) | 1999-11-30 |
US6137732A (en) | 2000-10-24 |
TW425549B (en) | 2001-03-11 |
CN100389469C (zh) | 2008-05-21 |
KR100328331B1 (ko) | 2002-03-12 |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030604 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030604 Address after: Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080521 Termination date: 20140519 |