CN1228837C - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN1228837C
CN1228837C CNB021416885A CN02141688A CN1228837C CN 1228837 C CN1228837 C CN 1228837C CN B021416885 A CNB021416885 A CN B021416885A CN 02141688 A CN02141688 A CN 02141688A CN 1228837 C CN1228837 C CN 1228837C
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CN
China
Prior art keywords
semiconductor device
electrode
resin
semiconductor chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021416885A
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English (en)
Chinese (zh)
Other versions
CN1405881A (zh
Inventor
森口浩治
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Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1405881A publication Critical patent/CN1405881A/zh
Application granted granted Critical
Publication of CN1228837C publication Critical patent/CN1228837C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/415—Leadframe inner leads serving as die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/856—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CNB021416885A 2001-09-11 2002-09-10 半导体装置 Expired - Fee Related CN1228837C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001274504A JP3868777B2 (ja) 2001-09-11 2001-09-11 半導体装置
JP274504/2001 2001-09-11

Publications (2)

Publication Number Publication Date
CN1405881A CN1405881A (zh) 2003-03-26
CN1228837C true CN1228837C (zh) 2005-11-23

Family

ID=19099523

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021416885A Expired - Fee Related CN1228837C (zh) 2001-09-11 2002-09-10 半导体装置

Country Status (3)

Country Link
US (1) US6784537B2 (https=)
JP (1) JP3868777B2 (https=)
CN (1) CN1228837C (https=)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323361B2 (en) * 2002-03-29 2008-01-29 Fairchild Semiconductor Corporation Packaging system for semiconductor devices
US6794740B1 (en) * 2003-03-13 2004-09-21 Amkor Technology, Inc. Leadframe package for semiconductor devices
JP4294405B2 (ja) * 2003-07-31 2009-07-15 株式会社ルネサステクノロジ 半導体装置
US7315081B2 (en) * 2003-10-24 2008-01-01 International Rectifier Corporation Semiconductor device package utilizing proud interconnect material
JP4312616B2 (ja) * 2004-01-26 2009-08-12 Ｎｅｃエレクトロニクス株式会社 半導体装置
EP1603157B1 (en) * 2004-05-31 2008-01-09 STMicroelectronics S.r.l. Vertical conduction power electronic device package and corresponding assembling method
JP4468115B2 (ja) 2004-08-30 2010-05-26 株式会社ルネサステクノロジ 半導体装置
JP4153932B2 (ja) 2004-09-24 2008-09-24 株式会社東芝 半導体装置および半導体装置の製造方法
WO2006058030A2 (en) * 2004-11-23 2006-06-01 Siliconix Incorporated Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys
US20060145319A1 (en) * 2004-12-31 2006-07-06 Ming Sun Flip chip contact (FCC) power package
US20060108635A1 (en) * 2004-11-23 2006-05-25 Alpha Omega Semiconductor Limited Trenched MOSFETS with part of the device formed on a (110) crystal plane
JP4547279B2 (ja) 2005-02-08 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE102005011159B4 (de) * 2005-03-09 2013-05-16 Infineon Technologies Ag Halbleiterbauteil mit oberflächenmontierbaren Außenkontaktflächen und Verfahren zur Herstellung desselben
US7230333B2 (en) * 2005-04-21 2007-06-12 International Rectifier Corporation Semiconductor package
US7402462B2 (en) * 2005-07-12 2008-07-22 Fairchild Semiconductor Corporation Folded frame carrier for MOSFET BGA
JP4860994B2 (ja) * 2005-12-06 2012-01-25 ルネサスエレクトロニクス株式会社 半導体装置
US20070215997A1 (en) * 2006-03-17 2007-09-20 Martin Standing Chip-scale package
US7768075B2 (en) 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
US7772036B2 (en) * 2006-04-06 2010-08-10 Freescale Semiconductor, Inc. Lead frame based, over-molded semiconductor package with integrated through hole technology (THT) heat spreader pin(s) and associated method of manufacturing
US8124460B2 (en) * 2006-07-17 2012-02-28 Stats Chippac Ltd. Integrated circuit package system employing an exposed thermally conductive coating
DE102007002157A1 (de) * 2007-01-15 2008-07-17 Infineon Technologies Ag Halbleiteranordnung und zugehörige Herstellungsverfahren
US7879652B2 (en) * 2007-07-26 2011-02-01 Infineon Technologies Ag Semiconductor module
US8426960B2 (en) * 2007-12-21 2013-04-23 Alpha & Omega Semiconductor, Inc. Wafer level chip scale packaging
US7955893B2 (en) * 2008-01-31 2011-06-07 Alpha & Omega Semiconductor, Ltd Wafer level chip scale package and process of manufacture
US8680658B2 (en) * 2008-05-30 2014-03-25 Alpha And Omega Semiconductor Incorporated Conductive clip for semiconductor device package
US8482119B2 (en) * 2008-06-24 2013-07-09 Infineon Technologies Ag Semiconductor chip assembly
US8373257B2 (en) * 2008-09-25 2013-02-12 Alpha & Omega Semiconductor Incorporated Top exposed clip with window array
US7851856B2 (en) * 2008-12-29 2010-12-14 Alpha & Omega Semiconductor, Ltd True CSP power MOSFET based on bottom-source LDMOS
US8222078B2 (en) 2009-07-22 2012-07-17 Alpha And Omega Semiconductor Incorporated Chip scale surface mounted semiconductor device package and process of manufacture
JP2011049311A (ja) * 2009-08-26 2011-03-10 Shinko Electric Ind Co Ltd 半導体パッケージ及び製造方法
US20110075392A1 (en) * 2009-09-29 2011-03-31 Astec International Limited Assemblies and Methods for Directly Connecting Integrated Circuits to Electrically Conductive Sheets
JP2011151109A (ja) * 2010-01-20 2011-08-04 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP5126278B2 (ja) * 2010-02-04 2013-01-23 株式会社デンソー 半導体装置およびその製造方法
US8362606B2 (en) 2010-07-29 2013-01-29 Alpha & Omega Semiconductor, Inc. Wafer level chip scale package
CN102005432B (zh) * 2010-09-30 2012-03-28 江苏长电科技股份有限公司 四面无引脚封装结构及其封装方法
US20120175688A1 (en) * 2011-01-10 2012-07-12 International Rectifier Corporation Semiconductor Package with Reduced On-Resistance and Top Metal Spreading Resistance with Application to Power Transistor Packaging
JP5822468B2 (ja) * 2011-01-11 2015-11-24 ローム株式会社 半導体装置
JP5601282B2 (ja) * 2011-06-01 2014-10-08 株式会社デンソー 半導体装置
JP5851897B2 (ja) * 2012-03-19 2016-02-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
TWI512851B (zh) * 2012-09-01 2015-12-11 萬國半導體股份有限公司 帶有厚底部基座的晶圓級封裝器件及其製備方法
US9087828B2 (en) 2013-03-12 2015-07-21 Alpha & Omega Semiconductor Incorporated Semiconductor device with thick bottom metal and preparation method thereof
JP6386746B2 (ja) * 2014-02-26 2018-09-05 株式会社ジェイデバイス 半導体装置
JP6538396B2 (ja) * 2015-03-27 2019-07-03 株式会社ジェイデバイス 半導体装置
WO2016203764A1 (ja) * 2015-06-17 2016-12-22 パナソニックＩｐマネジメント株式会社 半導体装置及びモジュール部品
US10777475B2 (en) 2015-12-04 2020-09-15 Renesas Electronics Corporation Semiconductor chip, semiconductor device, and electronic device
JP6851239B2 (ja) 2017-03-29 2021-03-31 エイブリック株式会社 樹脂封止型半導体装置およびその製造方法
WO2020129273A1 (ja) * 2018-12-21 2020-06-25 アオイ電子株式会社 半導体装置および半導体装置の製造方法
US11393743B2 (en) * 2019-12-18 2022-07-19 Infineon Technologies Ag Semiconductor assembly with conductive frame for I/O standoff and thermal dissipation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09312374A (ja) * 1996-05-24 1997-12-02 Sony Corp 半導体パッケージ及びその製造方法
US6075289A (en) * 1996-10-24 2000-06-13 Tessera, Inc. Thermally enhanced packaged semiconductor assemblies
JP3695893B2 (ja) 1996-12-03 2005-09-14 沖電気工業株式会社 半導体装置とその製造方法および実装方法
JP3460559B2 (ja) * 1997-12-12 2003-10-27 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
EP0978871A3 (en) * 1998-08-05 2001-12-19 Harris Corporation A low power packaging design
JP4260263B2 (ja) * 1999-01-28 2009-04-30 株式会社ルネサステクノロジ 半導体装置
US6215180B1 (en) * 1999-03-17 2001-04-10 First International Computer Inc. Dual-sided heat dissipating structure for integrated circuit package
US6963141B2 (en) * 1999-12-31 2005-11-08 Jung-Yu Lee Semiconductor package for efficient heat spreading
TW454321B (en) * 2000-09-13 2001-09-11 Siliconware Precision Industries Co Ltd Semiconductor package with heat dissipation structure
TW476147B (en) * 2001-02-13 2002-02-11 Siliconware Precision Industries Co Ltd BGA semiconductor packaging with through ventilator heat dissipation structure
US6534859B1 (en) * 2002-04-05 2003-03-18 St. Assembly Test Services Ltd. Semiconductor package having heat sink attached to pre-molded cavities and method for creating the package

Also Published As

Publication number Publication date
JP3868777B2 (ja) 2007-01-17
JP2003086737A (ja) 2003-03-20
US6784537B2 (en) 2004-08-31
US20030052405A1 (en) 2003-03-20
CN1405881A (zh) 2003-03-26

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