CN1220263C - 半导体芯片,半导体集成电路及选择半导体芯片的方法 - Google Patents
半导体芯片,半导体集成电路及选择半导体芯片的方法 Download PDFInfo
- Publication number
- CN1220263C CN1220263C CNB021184372A CN02118437A CN1220263C CN 1220263 C CN1220263 C CN 1220263C CN B021184372 A CNB021184372 A CN B021184372A CN 02118437 A CN02118437 A CN 02118437A CN 1220263 C CN1220263 C CN 1220263C
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- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 207
- 238000000034 method Methods 0.000 title description 17
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000008878 coupling Effects 0.000 claims description 84
- 238000010168 coupling process Methods 0.000 claims description 84
- 238000005859 coupling reaction Methods 0.000 claims description 84
- 239000004020 conductor Substances 0.000 claims description 30
- 239000007943 implant Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000003826 tablet Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
SO | S1 | S2 | |
L | L | L | 选择 |
L | H | H | |
H | L | H | |
H | H | H |
SO | S1 | S3 | |
L | L | H | |
L | H | L | 选择 |
H | L | H | |
H | H | H |
SO | S1 | S4 | |
L | L | H | |
L | H | H | |
H | L | H | |
H | H | L | 选择 |
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP243949/2001 | 2001-08-10 | ||
JP2001243949A JP2003060053A (ja) | 2001-08-10 | 2001-08-10 | 半導体チップ及びそれを用いた半導体集積回路装置及び半導体チップ選択方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1402347A CN1402347A (zh) | 2003-03-12 |
CN1220263C true CN1220263C (zh) | 2005-09-21 |
Family
ID=19073955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021184372A Expired - Fee Related CN1220263C (zh) | 2001-08-10 | 2002-04-25 | 半导体芯片,半导体集成电路及选择半导体芯片的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6649428B2 (zh) |
JP (1) | JP2003060053A (zh) |
KR (1) | KR100724653B1 (zh) |
CN (1) | CN1220263C (zh) |
TW (1) | TW538526B (zh) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3959264B2 (ja) * | 2001-09-29 | 2007-08-15 | 株式会社東芝 | 積層型半導体装置 |
US20030112758A1 (en) * | 2001-12-03 | 2003-06-19 | Pang Jon Laurent | Methods and systems for managing variable delays in packet transmission |
US20030105799A1 (en) * | 2001-12-03 | 2003-06-05 | Avaz Networks, Inc. | Distributed processing architecture with scalable processing layers |
US6969909B2 (en) * | 2002-12-20 | 2005-11-29 | Vlt, Inc. | Flip chip FET device |
JP2004296853A (ja) | 2003-03-27 | 2004-10-21 | Seiko Epson Corp | 半導体チップ、半導体装置及びその製造方法、回路基板並びに電子機器 |
JP4419049B2 (ja) | 2003-04-21 | 2010-02-24 | エルピーダメモリ株式会社 | メモリモジュール及びメモリシステム |
DE102004060345A1 (de) | 2003-12-26 | 2005-10-06 | Elpida Memory, Inc. | Halbleitervorrichtung mit geschichteten Chips |
JP2007250561A (ja) * | 2004-04-12 | 2007-09-27 | Japan Science & Technology Agency | 半導体素子および半導体システム |
JP4577688B2 (ja) * | 2005-05-09 | 2010-11-10 | エルピーダメモリ株式会社 | 半導体チップ選択方法、半導体チップ及び半導体集積回路装置 |
US7327592B2 (en) | 2005-08-30 | 2008-02-05 | Micron Technology, Inc. | Self-identifying stacked die semiconductor components |
JP4473215B2 (ja) * | 2005-12-28 | 2010-06-02 | 株式会社リキッド・デザイン・システムズ | 半導体集積回路 |
US7352602B2 (en) * | 2005-12-30 | 2008-04-01 | Micron Technology, Inc. | Configurable inputs and outputs for memory stacking system and method |
US7701045B2 (en) * | 2006-04-11 | 2010-04-20 | Rambus Inc. | Point-to-point connection topology for stacked devices |
KR100762206B1 (ko) * | 2006-06-08 | 2007-10-01 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 칩 선택 신호 발생방법 |
US8018071B2 (en) | 2007-02-07 | 2011-09-13 | Samsung Electronics Co., Ltd. | Stacked structure using semiconductor devices and semiconductor device package including the same |
JPWO2008126468A1 (ja) * | 2007-03-30 | 2010-07-22 | 日本電気株式会社 | 半導体装置及び半導体装置の製造方法 |
ITMI20070933A1 (it) * | 2007-05-08 | 2008-11-09 | St Microelectronics Srl | Sistema elettronico multi piastrina |
KR100871381B1 (ko) * | 2007-06-20 | 2008-12-02 | 주식회사 하이닉스반도체 | 관통 실리콘 비아 칩 스택 패키지 |
KR100900236B1 (ko) * | 2008-01-25 | 2009-05-29 | 주식회사 하이닉스반도체 | 반도체 칩 및 이를 갖는 적층 반도체 패키지 |
KR100900239B1 (ko) | 2008-02-18 | 2009-06-02 | 주식회사 하이닉스반도체 | 스택 패키지 및 그의 제조방법 |
EP2099031A1 (fr) * | 2008-03-07 | 2009-09-09 | Axalto S.A. | Procédés pour fabriquer un empilement de circuits mémoire et pour adresser un circuit mémoire, empilement et dispositif correspondants |
KR100990937B1 (ko) * | 2008-04-03 | 2010-11-01 | 주식회사 하이닉스반도체 | 반도체 패키지 |
KR101001635B1 (ko) * | 2008-06-30 | 2010-12-17 | 주식회사 하이닉스반도체 | 반도체 패키지, 이를 갖는 적층 반도체 패키지 및 적층반도체 패키지의 하나의 반도체 칩 선택 방법 |
US8102029B2 (en) | 2008-10-31 | 2012-01-24 | Fairchild Semiconductor Corporation | Wafer level buck converter |
JP5160396B2 (ja) * | 2008-12-18 | 2013-03-13 | 株式会社日立製作所 | 半導体装置 |
US8400781B2 (en) | 2009-09-02 | 2013-03-19 | Mosaid Technologies Incorporated | Using interrupted through-silicon-vias in integrated circuits adapted for stacking |
KR101053534B1 (ko) * | 2009-10-29 | 2011-08-03 | 주식회사 하이닉스반도체 | 반도체 장치 및 이의 칩 선택방법 |
KR20110112707A (ko) | 2010-04-07 | 2011-10-13 | 삼성전자주식회사 | 층간 연결 유닛을 갖는 적층 메모리 장치, 이를 포함하는 메모리 시스템, 및 전송선의 지연시간 보상 방법 |
KR20110119087A (ko) | 2010-04-26 | 2011-11-02 | 삼성전자주식회사 | 스택형 반도체 장치 |
KR101078744B1 (ko) | 2010-05-06 | 2011-11-02 | 주식회사 하이닉스반도체 | 적층 반도체 패키지 |
KR101805146B1 (ko) | 2011-05-03 | 2017-12-05 | 삼성전자주식회사 | 반도체 칩, 메모리 칩, 메모리 제어 칩, 반도체 패키지, 그리고 메모리 시스템 |
JP2013021001A (ja) * | 2011-07-07 | 2013-01-31 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP6073757B2 (ja) * | 2013-08-07 | 2017-02-01 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6515724B2 (ja) | 2015-07-31 | 2019-05-22 | 富士通株式会社 | 半導体装置 |
US9966363B1 (en) * | 2017-02-03 | 2018-05-08 | Nanya Technology Corporation | Semiconductor apparatus and method for preparing the same |
KR20210128681A (ko) * | 2020-04-17 | 2021-10-27 | 에스케이하이닉스 주식회사 | 저항 소자를 구비하는 반도체 장치 |
KR20220106617A (ko) | 2021-01-22 | 2022-07-29 | 삼성전자주식회사 | 멀티 레벨 칩 인에이블 신호를 생성하는 스토리지 장치 및 이의 동작 방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4822989A (en) * | 1986-05-21 | 1989-04-18 | Hitachi, Ltd. | Semiconductor device and method of manufacturing thereof |
US6067062A (en) * | 1990-09-05 | 2000-05-23 | Seiko Instruments Inc. | Light valve device |
USRE35807E (en) * | 1991-04-16 | 1998-05-26 | Iversen Arthur H | Power semiconductor packaging |
JP2966972B2 (ja) | 1991-07-05 | 1999-10-25 | 株式会社日立製作所 | 半導体チップキャリアとそれを実装したモジュール及びそれを組み込んだ電子機器 |
US6094370A (en) * | 1996-06-10 | 2000-07-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device and various systems mounting them |
JP2870530B1 (ja) * | 1997-10-30 | 1999-03-17 | 日本電気株式会社 | スタックモジュール用インターポーザとスタックモジュール |
JP3563604B2 (ja) * | 1998-07-29 | 2004-09-08 | 株式会社東芝 | マルチチップ半導体装置及びメモリカード |
JP3360655B2 (ja) * | 1999-07-08 | 2002-12-24 | 日本電気株式会社 | 半導体装置 |
JP2001053217A (ja) * | 1999-08-10 | 2001-02-23 | Nec Corp | 三次元半導体装置用スタックキャリアおよび三次元半導体装置 |
KR100364635B1 (ko) * | 2001-02-09 | 2002-12-16 | 삼성전자 주식회사 | 칩-레벨에 형성된 칩 선택용 패드를 포함하는 칩-레벨3차원 멀티-칩 패키지 및 그 제조 방법 |
JP5685501B2 (ja) * | 2011-07-22 | 2015-03-18 | 株式会社クボタ | 水中ポンプの制御ユニット、及び水中ポンプの制御盤 |
-
2001
- 2001-08-10 JP JP2001243949A patent/JP2003060053A/ja active Pending
-
2002
- 2002-03-13 US US10/096,512 patent/US6649428B2/en not_active Expired - Fee Related
- 2002-03-18 TW TW091105100A patent/TW538526B/zh not_active IP Right Cessation
- 2002-03-28 KR KR1020020017035A patent/KR100724653B1/ko not_active IP Right Cessation
- 2002-04-25 CN CNB021184372A patent/CN1220263C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1402347A (zh) | 2003-03-12 |
JP2003060053A (ja) | 2003-02-28 |
KR100724653B1 (ko) | 2007-06-04 |
US20030040131A1 (en) | 2003-02-27 |
TW538526B (en) | 2003-06-21 |
US6649428B2 (en) | 2003-11-18 |
KR20030014100A (ko) | 2003-02-15 |
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Effective date of registration: 20081219 Address after: Tokyo, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa, Japan Patentee before: Fujitsu Ltd. |
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Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Patentee before: Fujitsu Microelectronics Ltd. |
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Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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Granted publication date: 20050921 Termination date: 20120425 |