JP5160396B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5160396B2 JP5160396B2 JP2008322224A JP2008322224A JP5160396B2 JP 5160396 B2 JP5160396 B2 JP 5160396B2 JP 2008322224 A JP2008322224 A JP 2008322224A JP 2008322224 A JP2008322224 A JP 2008322224A JP 5160396 B2 JP5160396 B2 JP 5160396B2
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Description
図1は、本発明の実施の形態1による半導体装置において、その構成の一例を示す概略図である。図1の半導体装置は、4枚のロジックLSI(LSIL_0,LSIL_0,LSIL_2,LSIL_3)と、2枚のメモリLSI(LSIM_0,LSIM_1)を積層し、その間を貫通電極で接続した積層型LSIの形態となっている。4枚のロジックLSIは例えば同一のLSIであり、CPU(Central Processing Unit)などの演算器を搭載する。2枚のメモリLSIも例えば同一のLSIであり、DRAMなどのメモリアレイを搭載する。TSVGL_0,TSVGL_1,TSVGL_2,TSVGL_3は、ロジックLSI間の通信を行うための貫通電極群であり、TSVGM_0,TSVGM_1は、ロジックLSIとメモリLSI間の通信を行うための貫通電極群である。
図12は、本発明の実施の形態2による半導体装置において、その主要部の構成の一例を示す概略図である。図12では、前述した図1における4枚のロジックLSI(LSIL_0〜LSIL_3)を例として、そのクロック信号の接続の形態が示されている。CLKGはクロック供給回路であり、発振回路OCM、クロックセレクタ回路CSEL、分周回路DIVMを含む。CALLはCLKG以外のすべてを含む部分を指し、その中のCKREGはCLKGを制御するための書き換え可能な記憶素子である。
図7は、本発明の実施の形態3による半導体装置において、その構成の一例を示す概略図である。図7では、前述した図1における、複数のロジックLSI(LSIL)の上に複数のメモリLSI(LSIM)を積層した構造を例として、各LSIにおける各貫通電極群の配置例が示されている。LSIWは、LSILとLSIMの貫通電極群の位置を合わせるためのインタポーザLSIである。一般的には、LSILとLSIMは大きさなどが異なり、端子の位置を様々な製品で合わせることは困難であり、LSIWにより端子位置を変更する。これにより、様々な製品で共通のLSIの利用が可能となり汎用性が向上する。
図9は、本発明の実施の形態4による半導体装置において、その構成の一例を示す概略図であり、前述した図7とは別の積層構造をとる場合の貫通電極群の配置例を示したものである。最下層に積層されるLSICはLSI外部との通信を行う通信回路を複数搭載した通信LSIであり、LSIMはメモリLSIであり、LSILはロジックLSIである。積層型LSIの外部との通信を行う回路をLSICとして独立させることで、LSILに積層型LSI外部との回路が必要でなくなり面積効率が向上する。
CKREG 記憶素子
CLKG クロック供給回路
CMC 外部通信回路
CSEL クロックセレクタ回路
DIVM 分周回路
FUNC ロジック回路、
IDGEN 識別子生成回路
INI リクエスト系処理ブロック
LGC ロジックブロック
LSIC 通信LSI
LSIIDR LSI識別子レジスタ
LSIL ロジックLSI
LSIM メモリLSI
LSIW インタポーザLSI
MEM メモリブロック
MEMA メモリアレイ
OCM 発振回路
PU プロセッサ回路
PKGB パッケージ基板
R 貫通電極受信回路
RCVR レシーバ回路
RFIFO 受信用のバッファ回路
RQTBL ARBQ用のルーティング情報格納レジスタ
RSTBL ARBS用のルーティング情報格納レジスタ
SRC 記憶素子
T 貫通電極送信回路
TCVR トランシーバ回路
TGT レスポンス系処理ブロック
TR 貫通電極送受信回路
TRTBL 貫通電極送受信設定用レジスタ
TSVA 受信可否認識用の貫通電極ポート
TSVC タイミング制御用の貫通電極ポート
TSVCS 貫通電極
TSVD 情報送受信用の貫通電極ポート
TSVGL ロジックLSI間の貫通電極群
TSVGLA ロジックLSIと通信LSI間の貫通電極群
TSVGLB ロジックLSI間の貫通電極群
TSVGM ロジックLSIとメモリLSI間の貫通電極群
TSVGP:電源&グラウンド用貫通電極群
TSVGPL ロジックLSIへの電源供給用貫通電極群
TSVGPM メモリLSIへの電源供給用貫通電極群
TSVQ 受信回路選択用の貫通電極ポート
TSVREG 各種設定用レジスタ
Claims (16)
- 互いに積層される第1、第2、および第3半導体チップと、
前記第1〜前記第3半導体チップ間で通信を行うための第1、第2、および第3貫通電極群とを備え、
前記第1半導体チップは、前記第1貫通電極群を介して前記第2半導体チップに対して要求信号を送信し、これに応じて、前記第2半導体チップは、前記第2貫通電極群を介して前記第1半導体チップに対して返答信号を返信し、
前記第1半導体チップは、前記第1貫通電極群を介して前記第3半導体チップに対して要求信号を送信し、これに応じて、前記第3半導体チップは、前記第3貫通電極群を介して前記第1半導体チップに対して返答信号を返信することを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記第1半導体チップは、前記第1貫通電極群とのインタフェースとなる第1送受信回路と、前記第2貫通電極群とのインタフェースとなる第2送受信回路と、前記第3貫通電極群とのインタフェースとなる第3送受信回路と、前記第1、第2及び第3送受信回路に対して設定を行う第1送受信設定部とを備え、
前記第2半導体チップは、前記第1貫通電極群とのインタフェースとなる第4送受信回路と、前記第2貫通電極群とのインタフェースとなる第5送受信回路と、前記第3貫通電極群とのインタフェースとなる第6送受信回路と、前記第4、第5及び第6送受信回路に対して設定を行う第2送受信設定部とを備え、
前記第3半導体チップは、前記第1貫通電極群とのインタフェースとなる第7送受信回路と、前記第2貫通電極群とのインタフェースとなる第8送受信回路と、前記第3貫通電極群とのインタフェースとなる第9送受信回路と、前記第7、第8及び第9送受信回路に対して設定を行う第3送受信設定部とを備え、
前記第1送受信設定部は、前記第1送受信回路を送信専用回路に、前記第2送受信回路を受信専用回路に、前記第3送受信回路を受信専用回路にそれぞれ設定し、
前記第2送受信設定部は、前記第4送受信回路を受信専用回路に、前記第5送受信回路を送信専用回路に、前記第6送受信回路を受信専用回路にそれぞれ設定し、
前記第3送受信設定部は、前記第7送受信回路を受信専用回路に、前記第8送受信回路を受信専用回路に、前記第9送受信回路を送信専用回路にそれぞれ設定することを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記第1、第2及び第3送受信設定部のそれぞれは、書き換え可能な記憶素子によって実現されることを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記第1半導体チップは、さらに、第1識別子が割り当てられた第1処理ブロックと、第1経路設定部とを備え、
前記第2半導体チップは、さらに、第1アドレスが割り当てられた第2処理ブロックと、第2経路設定部とを備え、
前記第3半導体チップは、さらに、第2アドレスが割り当てられた第3処理ブロックと、第3経路設定部とを備え、
前記要求信号には、宛先を示すアドレスと、要求元を示す識別子が含まれ、
前記第1経路設定部は、前記第1処理ブロックから前記第1アドレスに向けた前記要求信号と、前記第1処理ブロックから前記第2アドレスに向けた前記要求信号とが前記第1送受信回路に繋がるように経路設定を行い、
前記第2経路設定部は、前記第2処理ブロックから前記第1識別子に向けた前記返答信号が前記第5送受信回路に繋がるように経路設定を行い、
前記第3経路設定部は、前記第3処理ブロックから前記第1識別子に向けた前記返答信号が前記第9送受信回路に繋がるように経路設定を行うことを特徴とする半導体装置。 - 請求項4記載の半導体装置において、
前記第1、第2及び第3経路設定部のそれぞれは、複数のスイッチ回路と、前記複数のスイッチ回路のオン・オフを設定する書き換え可能な記憶素子によって実現されることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記第1半導体チップは、前記要求信号として、トリガ信号と、要求内容を示すデータ信号とを並行して送信し、
前記第2半導体チップまたは前記第3半導体チップは、前記トリガ信号を用いて前記データ信号を内部に取り込むことを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記第1、第2及び第3半導体チップのそれぞれは、プロセッサ回路を含み、
前記第1、第2及び第3送受信設定部での設定は、前記プロセッサ回路のプログラムに基づいて行われることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記第1、第2及び第3半導体チップのそれぞれは、チップ識別子を記憶するための記憶素子を備え、
前記チップ識別子は、貫通電極を介したシフトチェーン構成による書き込みによって、前記第1、第2及び第3半導体チップ毎にそれぞれ異なる値に設定されることを特徴とする半導体装置。 - 他の半導体チップと積層搭載して用いられる第1半導体チップを備え、
前記第1半導体チップは、
第1、第2及び第3貫通電極ポート群と、
前記第1、第2及び第3貫通電極ポート群にそれぞれ接続される第1〜第3送受信回路と、
前記第1、第2及び第3送受信回路に対して設定を行う送受信設定部とを有し、
前記送受信設定部は、前記他の半導体チップとなる第2半導体チップおよび第3半導体チップに要求信号を送信するため、前記第1送受信回路を送信専用回路に設定し、前記要求信号に対する返答を前記第2半導体チップから受信するため前記第2送受信回路を受信専用回路に設定し、前記要求信号に対する返答を前記第3半導体チップから受信するため前記第3送受信回路を受信専用回路に設定することを特徴とする半導体装置。 - 請求項9記載の半導体装置において、
前記送受信設定部は、書き換え可能な記憶素子によって実現されることを特徴とする半導体装置。 - 請求項9記載の半導体装置において、
前記第1半導体チップは、さらに、所定の処理を行う処理ブロックと、経路設定部とを備え、
前記経路設定部は、前記処理ブロックの出力が前記第1送受信回路に繋がるように設定を行い、前記第2送受信回路からの入力と前記第3送受信回路からの入力が前記処理ブロックの入力に繋がるように設定を行うことを特徴とする半導体装置。 - 請求項11記載の半導体装置において、
前記経路設定部は、複数のスイッチ回路と、前記複数のスイッチ回路のオン・オフを設定する書き換え可能な記憶素子によって実現されることを特徴とする半導体装置。 - それぞれ積層搭載される複数の半導体チップと、
前記複数の半導体チップ間で通信を行うための複数の貫通電極とを備え、
前記複数の半導体チップのそれぞれは、
前記複数の貫通電極とのインタフェースとなる複数の送受信回路と、
前記複数の送受信回路のそれぞれを送信専用回路または受信専用回路に設定するための送受信設定部とを備え、
前記送受信設定部は、前記複数の貫通電極のそれぞれに、1個の前記送信専用回路と複数の前記受信専用回路が接続されるように設定を行うことを特徴とする半導体装置。 - 請求項13記載の半導体装置において、
前記送受信設定部は、書き換え可能な記憶素子によって実現されることを特徴とする半導体装置。 - 請求項13記載の半導体装置において、
前記複数の半導体チップは、第1および第2半導体チップを含み、
前記複数の貫通電極は、第1および第2貫通電極を含み、
前記第1半導体チップは、
第1リクエスト処理回路と第1レスポンス処理回路を含む第1処理ブロックと、
前記第1貫通電極に接続され、前記送受信設定部で設定された第1送信専用回路と、
前記第2貫通電極に接続され、前記送受信設定部で設定された第1受信専用回路と、
第1経路設定部とを備え、
前記第2半導体チップは、
第2リクエスト処理回路と第2レスポンス処理回路を含む第2処理ブロックと、
前記第1貫通電極に接続され、前記送受信設定部で設定された第2受信専用回路と、
前記第2貫通電極に接続され、前記送受信設定部で設定された第2送信専用回路と、
第2経路設定部とを備え、
前記第1経路設定部は、前記第1リクエスト処理回路の出力が前記第1送信専用回路に繋がるように設定を行い、前記第2レスポンス処理回路からの前記第1受信専用回路への入力が前記第1リクエスト処理回路に繋がるように設定を行い、前記第2リクエスト処理回路からの前記第1受信専用回路への入力が前記第1レスポンス処理回路に繋がるように設定を行い、
前記第2経路設定部は、前記第2リクエスト処理回路の出力が前記第2送信専用回路に繋がるように設定を行い、前記第1レスポンス処理回路からの前記第2受信専用回路への入力が前記第2リクエスト処理回路に繋がるように設定を行い、前記第1リクエスト処理回路からの前記第2受信専用回路への入力が前記第2レスポンス処理回路に繋がるように設定を行うことを特徴とする半導体装置。 - 請求項15記載の半導体装置において、
前記第1および第2経路設定部のそれぞれは、複数のスイッチ回路と、前記複数のスイッチ回路のオン・オフを設定する書き換え可能な記憶素子によって実現されることを特徴とする半導体装置。
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US8648345B2 (en) | 1999-10-29 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
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US8184463B2 (en) | 2012-05-22 |
US20100155921A1 (en) | 2010-06-24 |
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US20120217620A1 (en) | 2012-08-30 |
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