CN1216059A - 一种清洗和腐蚀电子显示器以及衬片的组合物 - Google Patents
一种清洗和腐蚀电子显示器以及衬片的组合物 Download PDFInfo
- Publication number
- CN1216059A CN1216059A CN199898800045A CN98800045A CN1216059A CN 1216059 A CN1216059 A CN 1216059A CN 199898800045 A CN199898800045 A CN 199898800045A CN 98800045 A CN98800045 A CN 98800045A CN 1216059 A CN1216059 A CN 1216059A
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- Prior art keywords
- composition
- fluoride
- acid
- ammonium
- persulfate
- Prior art date
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Links
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 239000010453 quartz Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 52
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 47
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 39
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 235000012431 wafers Nutrition 0.000 claims description 33
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 claims description 31
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 26
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- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 22
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 21
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 17
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- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 8
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- ASZZHBXPMOVHCU-UHFFFAOYSA-N 3,9-diazaspiro[5.5]undecane-2,4-dione Chemical compound C1C(=O)NC(=O)CC11CCNCC1 ASZZHBXPMOVHCU-UHFFFAOYSA-N 0.000 claims description 6
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 6
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- 150000002823 nitrates Chemical class 0.000 claims description 3
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/12—Light metals
- C23G1/125—Light metals aluminium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
- Liquid Crystal (AREA)
Abstract
Description
清洗(SiO2) | 1.H2SO4∶H2O2(6∶1),120℃2.50%HF∶H2O(1∶100~1000)3.NH4OH∶H2O2∶H2O(1∶1∶7)SC-14.HCl∶H2O2∶H2O(1∶1∶6)SC-25.去离子水漂洗 |
腐蚀(SiO2) | 1.40%NH4F∶50%HF(7∶1)BOE2.40%NH4F∶50%HF(7∶1)+H2O2 |
腐蚀(SiNx) | H3PO4∶H2O(85∶1)或40%NH4F∶50%HF(20∶1) |
腐蚀(Al和Al合金) | H3PO4∶CH3COOH∶HNO3∶H2O(65∶5∶5∶25) |
测试件 | 组合物溶液 | 处理时间(秒) | 水湿润性 | 备注 |
a | A | 8 | 好 | |
a | B | 7 | 好 | 加入5v%异丙醇 |
a | 10%HF | 10 | 好 | |
b | A | 10 | 好 | 加入5v%异丙醇 |
b | A | 6 | 好 | |
b | B | 6 | 好 | 加入5v%异丙醇 |
b | B | 5 | 好 | 加入15v%异丙醇 |
b | 10%HF | 12 | 好 | |
c | C | 50 | 好 | |
c | 20%HF | 50 | 好 | |
d | A | 12 | 好 | |
d | A | 9 | 好 | 加入5v%异丙醇 |
d | B | 8 | 好 | 加入5v%异丙醇 |
d | B | 7 | 好 | 加入15v%异丙醇 |
d | 10%HF | 12 | 好 | |
e | B | 10 | 好 | B溶液∶H2O=1∶4 |
e | 2%HF | 15 | 好 | |
f | B | 10 | 好 | B溶液∶H2O=1∶2 |
f | 30%NH4HF2 | 15 | 好 | |
g | B | 10 | 好 |
测试件 | 组合物 | 处理时间(秒) | 处理温度(℃) | 水湿润性 |
a | F | 4 | 25 | 好 |
a | 10%HF | 6 | 25 | 好 |
b | F | 6 | 25 | 好 |
b | 10%HF | 9 | 25 | 好 |
c | F | 8 | 25 | 好 |
c | 20%HF | 12 | 25 | 好 |
测试件 | 组合物溶液 | 处理时间(秒) | 处理温度(℃) | 表面粗糙度 |
a | A | 60 | 25 | Ra:0.064μmRt:0.501μm |
a | 10%HF | 60 | 25 | Ra:0.069μmRt:0.724μm |
光泽度 | 水湿润性 | |
新管 | 97.25% | 不好 |
CeO2抛光 | 96.4% | 不好 |
组合物B | 97.25% | 好 |
光泽度 | 水湿润性 | |
新管 | 97.25% | 好 |
CeO2抛光 | 96.4% | 好 |
组合物G | 97.25% | 好 |
12%HF | 组合物A | 50%稀释组合物A | 组合物B | ||
重量(g) | 浸渍前 | 36.78 | 37.52 | 37.05 | 35.78 |
浸渍后 | 35.78 | 37.05 | 36.78 | 35.64 | |
重量损失(%) | 2.72 | 1.25 | 0.73 | 0.39 | |
F离子量(ppm) | 55,000 | 80,000 | 40,000 | 26,000 |
化合物溶液B1 | B1+5v%异丙醇 | B1+25v%异丙醇 | DHF | DHF | |
F离子量(ppm) | 532 | 505 | 399 | 475 | 475 |
浸渍时间(秒) | 10 | 5 | 3 | 30 | 40 |
水湿润性 | 好 | 好 | 好 | 不好 | 好 |
组合物G | DHF | DHF | |
F离子量(ppm) | 532 | 475 | 475 |
浸渍时间(秒) | 3 | 30 | 40 |
水湿润性 | 好 | 不好 | 不好 |
组合物 | 处理温度(25℃) | 处理时间(秒) | |
SiNx | F | 25 | 120 |
G | 25 | 90 | |
H | 25 | 120 | |
I | 25 | 90 | |
BOE | 25 | 180 | |
Al-Nb | F | 25 | 360 |
G | 25 | 360 | |
H | 25 | 90 | |
I | 25 | 60 | |
Al腐蚀剂 | 25 | 300 |
处理时间(分) | 重量损失(%) | 水湿润性 | 目测检查颗粒 | |
15%HF | 10 | 0.12 | 好 | 好 |
组合物溶液A | 10 | 0.06 | 好 | 好 |
粗糙度(μm) | 第一次检测 | 第二次检测 | 第三次检测 | 第四次检测 | 第五次检测 | 平均 | |
组合物溶液D | Ra | 0.024 | 0.022 | 0.019 | 0.016 | 0.016 | 0.0194 |
Rq | 0.031 | 0.03 | 0.024 | 0.021 | 0.021 | 0.0254 | |
Rt | 0.234 | 0.312 | 0.143 | 0.202 | 0.141 | 0.2064 | |
MAE | Ra | 0.079 | 0.08 | 0.103 | 0.08 | 0.08 | 0.0844 |
Rq | 0.101 | 0.103 | 0.145 | 0.104 | 0.105 | 0.1116 | |
Rt | 0.644 | 0.793 | 1.223 | 1.027 | 0.739 | 0.8852 |
测试件 | 腐蚀溶液 | 处理时间(分) | 处理温度(℃) | 表面粗糙度(μm) | 腐蚀厚度(μm) |
a | 组合物D | 20 | 25-27 | Ra:0.019Rt:0.206 | 25 |
a | MAE | 1.5 | 25-45 | Ra:0.084Rt:0.885 | 32 |
测试件 | 组合物 | 处理时间(分) | 处理温度(℃) | 疏水性 | 颗粒检验 |
b | A | 5 | 25 | O | 好 |
c | A | 8 | 25 | O | 好 |
d | A | 2 | 25 | O | 好 |
d | B | 6 | 25 | O | 好 |
Claims (19)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1997/1539 | 1997-01-21 | ||
KR19970001539 | 1997-01-21 | ||
KR1019970053384A KR100248113B1 (ko) | 1997-01-21 | 1997-10-17 | 전자 표시 장치 및 기판용 세정 및 식각 조성물 |
KR1997/53384 | 1997-10-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1216059A true CN1216059A (zh) | 1999-05-05 |
CN1064986C CN1064986C (zh) | 2001-04-25 |
Family
ID=26632476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN988000458A Expired - Fee Related CN1064986C (zh) | 1997-01-21 | 1998-01-21 | 一种清洗和腐蚀电子显示器以及衬片的组合物 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6194365B1 (zh) |
EP (1) | EP0892840B1 (zh) |
JP (3) | JP4069961B2 (zh) |
KR (1) | KR100248113B1 (zh) |
CN (1) | CN1064986C (zh) |
DE (1) | DE69817275D1 (zh) |
MY (1) | MY118541A (zh) |
WO (1) | WO1998031768A1 (zh) |
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- 1998-01-21 EP EP98901121A patent/EP0892840B1/en not_active Expired - Lifetime
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- 1998-01-21 CN CN988000458A patent/CN1064986C/zh not_active Expired - Fee Related
- 1998-01-21 DE DE69817275T patent/DE69817275D1/de not_active Expired - Lifetime
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CN101560058B (zh) * | 2008-04-15 | 2012-03-21 | 株式会社东进世美肯 | 液晶显示装置用玻璃基板的清洗及蚀刻组成物以及利用它的玻璃基板的蚀刻方法 |
CN103205766A (zh) * | 2012-01-13 | 2013-07-17 | 苏州汉扬精密电子有限公司 | 镁合金酸洗活化剂及酸洗方法和产品 |
CN103205766B (zh) * | 2012-01-13 | 2016-06-29 | 苏州汉扬精密电子有限公司 | 镁合金酸洗活化剂及酸洗方法和产品 |
CN105340057B (zh) * | 2013-04-30 | 2018-01-16 | 康宁股份有限公司 | 清洁玻璃基材的方法 |
CN105340057A (zh) * | 2013-04-30 | 2016-02-17 | 康宁股份有限公司 | 清洁玻璃基材的方法 |
CN104250814A (zh) * | 2013-06-27 | 2014-12-31 | 东友精细化工有限公司 | 蚀刻剂组合物 |
CN104669069A (zh) * | 2013-12-03 | 2015-06-03 | 汕头超声显示器(二厂)有限公司 | 一种ogs电容触摸屏的边缘抛光方法 |
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CN106783527A (zh) * | 2015-11-23 | 2017-05-31 | 东莞新科技术研究开发有限公司 | 半导体晶片的清洗方法 |
CN109072077A (zh) * | 2016-03-30 | 2018-12-21 | 东京毅力科创株式会社 | 胶体二氧化硅生长抑制剂以及相关的方法和系统 |
US10763120B2 (en) | 2016-03-30 | 2020-09-01 | Tokyo Electron Limited | Colloidal silica growth inhibitor and associated method and system |
US10916440B2 (en) | 2016-03-30 | 2021-02-09 | Tokyo Electron Limited | Process and apparatus for processing a nitride structure without silica deposition |
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CN108265295A (zh) * | 2016-12-30 | 2018-07-10 | 鸿富锦精密工业(深圳)有限公司 | 退镀液 |
CN108753478A (zh) * | 2018-06-19 | 2018-11-06 | 成都青洋电子材料有限公司 | 一种半导体单晶硅清洗剂及其清洗方法 |
Also Published As
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WO1998031768A1 (en) | 1998-07-23 |
JP2007154205A (ja) | 2007-06-21 |
JP2007201459A (ja) | 2007-08-09 |
JP4069961B2 (ja) | 2008-04-02 |
JP2000507304A (ja) | 2000-06-13 |
US6194365B1 (en) | 2001-02-27 |
KR100248113B1 (ko) | 2000-03-15 |
DE69817275D1 (de) | 2003-09-25 |
EP0892840A1 (en) | 1999-01-27 |
KR19980070026A (ko) | 1998-10-26 |
EP0892840B1 (en) | 2003-08-20 |
MY118541A (en) | 2004-12-31 |
CN1064986C (zh) | 2001-04-25 |
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