CN1875465A - 氮化镓半导体衬底及其制造方法 - Google Patents
氮化镓半导体衬底及其制造方法 Download PDFInfo
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- CN1875465A CN1875465A CNA2004800317980A CN200480031798A CN1875465A CN 1875465 A CN1875465 A CN 1875465A CN A2004800317980 A CNA2004800317980 A CN A2004800317980A CN 200480031798 A CN200480031798 A CN 200480031798A CN 1875465 A CN1875465 A CN 1875465A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 154
- 229910002601 GaN Inorganic materials 0.000 title claims description 82
- 239000000758 substrate Substances 0.000 title claims description 73
- 238000000034 method Methods 0.000 title claims description 29
- 230000008569 process Effects 0.000 title description 4
- 238000005530 etching Methods 0.000 claims abstract description 87
- 238000001312 dry etching Methods 0.000 claims abstract description 58
- 238000001039 wet etching Methods 0.000 claims abstract description 41
- 230000033116 oxidation-reduction process Effects 0.000 claims abstract description 19
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 11
- 150000002367 halogens Chemical class 0.000 claims abstract description 10
- 238000005406 washing Methods 0.000 claims description 74
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 62
- 238000005498 polishing Methods 0.000 claims description 32
- 239000003795 chemical substances by application Substances 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000003960 organic solvent Substances 0.000 claims description 14
- 229910052755 nonmetal Inorganic materials 0.000 claims description 5
- 239000012670 alkaline solution Substances 0.000 claims description 4
- 239000000356 contaminant Substances 0.000 claims 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract description 59
- 239000013078 crystal Substances 0.000 abstract description 43
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 29
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 25
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002923 metal particle Substances 0.000 abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 4
- 150000004767 nitrides Chemical class 0.000 abstract description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract description 2
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 65
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 54
- 239000000243 solution Substances 0.000 description 48
- 239000002253 acid Substances 0.000 description 37
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 32
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 27
- 230000003472 neutralizing effect Effects 0.000 description 27
- 239000013043 chemical agent Substances 0.000 description 24
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 22
- 238000010828 elution Methods 0.000 description 19
- 229910052742 iron Inorganic materials 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- 239000000460 chlorine Substances 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 210000002381 plasma Anatomy 0.000 description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 15
- 125000004429 atom Chemical group 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 238000004020 luminiscence type Methods 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000000227 grinding Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 238000005200 wet scrubbing Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 11
- 229910052801 chlorine Inorganic materials 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
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- 239000003513 alkali Substances 0.000 description 8
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- 230000009466 transformation Effects 0.000 description 7
- 229910021642 ultra pure water Inorganic materials 0.000 description 7
- 239000012498 ultrapure water Substances 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000000908 ammonium hydroxide Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 5
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- 150000002739 metals Chemical class 0.000 description 5
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000013528 metallic particle Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 230000003134 recirculating effect Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910000039 hydrogen halide Inorganic materials 0.000 description 2
- 239000012433 hydrogen halide Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 229910001573 adamantine Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000007516 brønsted-lowry acids Chemical class 0.000 description 1
- 150000007528 brønsted-lowry bases Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002730 mercury Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
化学溶液 | pH | 选择性 | 刻蚀能力 | 难闻气味 |
KOH | 10至12 | 强 | 无 | 无 |
NH4OH | 10至12 | 弱 | 弱 | 强 |
H2O2 | 3至4 | 无 | 弱 | 无 |
H3PO4 | 1 | 强 | 强 | 无 |
HF | 1至3 | 无 | 弱 | 无 |
HNO3 | 1 | 无 | 强 | 无 |
H2SO4 | 1 | 无 | 强 | 无 |
HCL | 1 | 无 | 强 | 强 |
化学溶液 | 电位(V) |
dHF(0.5%) | 0.83 |
HCl(10%) | 0.90 |
H2SO4(10%) | 0.92 |
O3(10ppm)/H2O | 1.22 |
dHF(0.5%)H2O2(10%) | 1.67 |
H2SO4/H2O2(4∶1)120℃ | 1.85 |
天线输出功率 | 800W |
偏压输出功率 | 500W |
刻蚀剂气体 | 氯气 |
刻蚀压力 | 0.2Pa |
刻蚀时间 | 150s |
试验例1 | 试验例2 | 试验例3 | 试验例4 | 试验例5 |
干法刻蚀 | 干法刻蚀 | 干法刻蚀 | 干法刻蚀 | 干法刻蚀 |
有机洗涤 | 有机洗涤 | 有机洗涤 | 有机洗涤 | 有机洗涤 |
KOH洗涤 | dHF洗涤 | HF+H2O2 | HF+H2O2 | |
有机洗涤 | KOH洗涤 | NH4OH | H2SO4+H2O2 | |
有机洗涤 | 有机洗涤 | NH4OH | ||
有机洗涤 |
试验例1 | 试验例2 | 试验例3 | 试验例4 | 试验例5 | |
Si | 2275.0 | 2174.0 | 174.0 | 58.0 | |
Cr | 3.7 | 1.5 | 0.8 | 1.3 | |
Mn | 0.6 | 1.2 | 0.5 | 0.4 | |
Fe | 154.0 | 47.5 | 6.7 | 6.5 | 3.2 |
Ni | 67.9 | 22.5 | 1.1 | 0.3 | 2.1 |
Cu | 47.9 | 11.0 | 5.6 | 9.8 | 5.1 |
Zn | 9.6 | 21.2 | 30.2 | 3.7 | 2.7 |
Al | 267.0 | ||||
颗粒量 | 1225.0 | 103.0 | 85.0 | 21.0 | 24.0 |
光致发光输出(任意单位) | |
试验例1 | 1250 |
试验例2 | 1420 |
试验例3 | 2350 |
试验例4 | 3330 |
试验例5 | 5800 |
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003365867 | 2003-10-27 | ||
JP365867/2003 | 2003-10-27 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101706533A Division CN101661910B (zh) | 2003-10-27 | 2004-08-06 | 氮化镓半导体衬底和蓝色发光器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1875465A true CN1875465A (zh) | 2006-12-06 |
CN100552888C CN100552888C (zh) | 2009-10-21 |
Family
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JP (1) | JP4479657B2 (zh) |
KR (1) | KR20060090827A (zh) |
CN (2) | CN101661910B (zh) |
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CN110797259A (zh) * | 2019-10-23 | 2020-02-14 | 中国电子科技集团公司第十三研究所 | 同质外延氮化镓衬底处理方法及氮化镓衬底 |
CN112534551A (zh) * | 2018-09-04 | 2021-03-19 | 东京毅力科创株式会社 | 用于湿法刻蚀的光调整刻蚀剂反应性 |
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-
2004
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- 2004-08-06 JP JP2005514909A patent/JP4479657B2/ja active Active
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- 2004-08-06 KR KR1020067007108A patent/KR20060090827A/ko not_active Application Discontinuation
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Cited By (9)
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CN101587859B (zh) * | 2008-05-23 | 2011-03-23 | 中芯国际集成电路制造(北京)有限公司 | 形成半导体互联结构的方法 |
CN102471931A (zh) * | 2009-09-30 | 2012-05-23 | 住友电气工业株式会社 | Iii族氮化物半导体衬底、外延衬底及半导体器件 |
US8952494B2 (en) | 2009-09-30 | 2015-02-10 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor substrate having a sulfide in a surface layer |
CN102471931B (zh) * | 2009-09-30 | 2015-07-29 | 住友电气工业株式会社 | Iii族氮化物半导体衬底、外延衬底及半导体器件 |
US9299890B2 (en) | 2009-09-30 | 2016-03-29 | Sumitomo Electric Industries, Ltd. | III nitride semiconductor substrate, epitaxial substrate, and semiconductor device |
CN112534551A (zh) * | 2018-09-04 | 2021-03-19 | 东京毅力科创株式会社 | 用于湿法刻蚀的光调整刻蚀剂反应性 |
CN112534551B (zh) * | 2018-09-04 | 2024-03-05 | 东京毅力科创株式会社 | 用于湿法刻蚀的光调整刻蚀剂反应性 |
CN110797259A (zh) * | 2019-10-23 | 2020-02-14 | 中国电子科技集团公司第十三研究所 | 同质外延氮化镓衬底处理方法及氮化镓衬底 |
CN110797259B (zh) * | 2019-10-23 | 2022-03-29 | 中国电子科技集团公司第十三研究所 | 同质外延氮化镓衬底处理方法及氮化镓衬底 |
Also Published As
Publication number | Publication date |
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JP4479657B2 (ja) | 2010-06-09 |
CN100552888C (zh) | 2009-10-21 |
JPWO2005041283A1 (ja) | 2007-04-26 |
WO2005041283A1 (ja) | 2005-05-06 |
CN101661910B (zh) | 2012-07-18 |
CN101661910A (zh) | 2010-03-03 |
US20070018284A1 (en) | 2007-01-25 |
KR20060090827A (ko) | 2006-08-16 |
TW200522187A (en) | 2005-07-01 |
EP1679740A1 (en) | 2006-07-12 |
TWI332236B (zh) | 2010-10-21 |
EP1679740A4 (en) | 2009-09-02 |
US20120135549A1 (en) | 2012-05-31 |
HK1094279A1 (en) | 2007-03-23 |
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