JP7160469B2 - 基板の表面の金属汚染物を減少させるための方法 - Google Patents
基板の表面の金属汚染物を減少させるための方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 99
- 229910052751 metal Inorganic materials 0.000 title claims description 41
- 239000002184 metal Substances 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 32
- 238000011109 contamination Methods 0.000 title claims description 17
- 229910052594 sapphire Inorganic materials 0.000 claims description 50
- 239000010980 sapphire Substances 0.000 claims description 50
- 239000000356 contaminant Substances 0.000 claims description 42
- 238000009832 plasma treatment Methods 0.000 claims description 25
- 150000002500 ions Chemical class 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 14
- 229910052742 iron Inorganic materials 0.000 claims description 13
- 230000015556 catabolic process Effects 0.000 claims description 11
- 238000006731 degradation reaction Methods 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 9
- 230000005672 electromagnetic field Effects 0.000 claims description 8
- 229910052756 noble gas Inorganic materials 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000010849 ion bombardment Methods 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 238000004140 cleaning Methods 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000011282 treatment Methods 0.000 description 8
- 238000004630 atomic force microscopy Methods 0.000 description 7
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- 239000000463 material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000001627 detrimental effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004439 roughness measurement Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 238000003486 chemical etching Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000010070 molecular adhesion Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- -1 residues Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
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Description
本発明は、金属汚染物を2E+10atoms/cm2未満まで減少させることを可能にし、
金属汚染物は、Ti及び/又はNi及び/又はFe元素を含み、
基板は、5よりも大きい硬度(モース硬度スケール)、そして7よりも大きいことが好ましい硬度を有し、
基板は、絶縁体、例えば、サファイアであり、
基板は、半導体、例えば、シリコンである。
供給されたガスは、少なくとも1種類の希ガス、好ましくはアルゴンを含み、
高周波電磁場は、0.8ワット/cm2と4ワット/cm2との間、好ましくは2ワット/cm2と3ワット/cm2との間のパワー密度を与え、
供給されたガスは、30ミリトールと120ミリトールとの間のガス圧を有し、
供給されたガスは、75sccmのガス流で配送され、
プラズマ処理は、10~60秒間続く。
Claims (10)
- イオン照射によるサファイア基板の表面のプラズマ処理を含む、前記サファイア基板の前記表面の金属汚染物を減少させるための方法であって、供給されたガスのプラズマが生成され、前記プラズマ中のイオンの照射エネルギーが、2.0ワット/cm2と4.0ワット/cm2との間のパワー密度を与える高周波電磁場によって制御される、方法であって、前記イオンの前記照射エネルギーが、前記金属汚染物を前記サファイア基板の前記表面からはぎ取るのに十分な第1のしきい値よりも大きく、且つ前記イオンの前記照射エネルギーが、前記サファイア基板の前記表面の表面品質劣化を防止するように第2のしきい値よりも小さく、前記表面品質は、RMS値で表された前記サファイア基板の前記表面の表面粗さである、方法。
- 前記高周波電磁場が、2.0ワット/cm2と3.0ワット/cm2との間のパワー密度を与える、請求項1に記載の方法。
- 前記金属汚染物が、イオン照射による前記サファイア基板の前記表面の前記プラズマ処理によって2E10atoms/cm2未満まで減少される、請求項1に記載の方法。
- 前記金属汚染物が、Ti、Ni及びFeの1つ又は複数からの汚染物を含む、請求項3に記載の方法。
- 前記供給されたガスが、少なくとも1種類の希ガス、好ましくはアルゴンを含む、請求項1に記載の方法。
- 前記供給されたガスが、30ミリトールと120ミリトールとの間のガス圧を有する、請求項1に記載の方法。
- 前記供給されたガスが、75sscmのガス流で配送される、請求項1に記載の方法。
- 前記プラズマ処理が、10~60秒間続く、請求項1に記載の方法。
- ウェハボンディングによって、プラズマ処理したサファイア基板の表面と半導体基板表面との間にボンディングを形成するためのボンディングプロセスであって、前記サファイア基板の前記表面の金属汚染物が、請求項1~8のいずれか一項に記載の方法にしたがって、イオン照射を用いたプラズマ処理によって減少される、ボンディングプロセス。
- プラズマ処理した前記サファイア基板の前記表面と前記半導体基板表面との間のボンディング強度を増加させる熱処理ステップを含む、請求項9に記載のボンディングプロセス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR1552416A FR3034252B1 (fr) | 2015-03-24 | 2015-03-24 | Procede de reduction de la contamination metallique sur la surface d'un substrat |
FR1552416 | 2015-03-24 |
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JP2016058779A Division JP2016181699A (ja) | 2015-03-24 | 2016-03-23 | 基板の表面の金属汚染物を減少させるための方法 |
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JP2021082828A JP2021082828A (ja) | 2021-05-27 |
JP7160469B2 true JP7160469B2 (ja) | 2022-10-25 |
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JP2021013447A Active JP7160469B2 (ja) | 2015-03-24 | 2021-01-29 | 基板の表面の金属汚染物を減少させるための方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010278341A (ja) | 2009-05-29 | 2010-12-09 | Shin-Etsu Chemical Co Ltd | 貼り合わせsos基板 |
JP2010278337A (ja) | 2009-05-29 | 2010-12-09 | Shin-Etsu Chemical Co Ltd | 表面欠陥密度が少ないsos基板 |
WO2014017369A1 (ja) | 2012-07-25 | 2014-01-30 | 信越化学工業株式会社 | ハイブリッド基板の製造方法及びハイブリッド基板 |
WO2014017368A1 (ja) | 2012-07-25 | 2014-01-30 | 信越化学工業株式会社 | Sos基板の製造方法及びsos基板 |
WO2014178356A1 (ja) | 2013-05-01 | 2014-11-06 | 信越化学工業株式会社 | ハイブリッド基板の製造方法及びハイブリッド基板 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6399521A (ja) * | 1985-12-12 | 1988-04-30 | Agency Of Ind Science & Technol | 半導体薄膜の製造方法 |
KR19980050972A (ko) * | 1996-12-21 | 1998-09-15 | 양승택 | 리모트 수소 플라즈마를 이용한 금속오염 제거 방법 |
WO1999058739A1 (en) * | 1998-05-12 | 1999-11-18 | Applied Materials, Inc. | Oxygen-argon gas mixture for precleaning in vacuum processing system |
KR100275534B1 (ko) * | 1998-07-31 | 2000-12-15 | 정선종 | 실리콘 기판 표면위의 금속 오염물 제거방법 |
KR100573929B1 (ko) * | 2001-12-14 | 2006-04-26 | (주)에이피엘 | 플라즈마를 이용한 표면 세정 장치 및 방법 |
FR2938702B1 (fr) * | 2008-11-19 | 2011-03-04 | Soitec Silicon On Insulator | Preparation de surface d'un substrat saphir pour la realisation d'heterostructures |
JP2012004272A (ja) * | 2010-06-16 | 2012-01-05 | Sumitomo Electric Ind Ltd | 炭化珪素半導体の洗浄方法および炭化珪素半導体の洗浄装置 |
CN101912855B (zh) | 2010-07-21 | 2012-09-05 | 河北工业大学 | 蓝宝石衬底材料抛光后表面洁净方法 |
JP5613580B2 (ja) * | 2011-02-09 | 2014-10-22 | 三菱電機株式会社 | 基板の製造方法 |
CN102218410A (zh) | 2011-04-19 | 2011-10-19 | 浙江露笑光电有限公司 | 蓝宝石抛光后的清洗方法 |
CN103537453B (zh) | 2013-08-20 | 2015-06-10 | 曾锡强 | 一种蓝宝石衬底晶片抛光后的超声清洗方法 |
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JP2010278337A (ja) | 2009-05-29 | 2010-12-09 | Shin-Etsu Chemical Co Ltd | 表面欠陥密度が少ないsos基板 |
WO2014017369A1 (ja) | 2012-07-25 | 2014-01-30 | 信越化学工業株式会社 | ハイブリッド基板の製造方法及びハイブリッド基板 |
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