HK1094279A1 - Gallium nitride semiconductor substrate and process for producing the same - Google Patents

Gallium nitride semiconductor substrate and process for producing the same

Info

Publication number
HK1094279A1
HK1094279A1 HK07101261.3A HK07101261A HK1094279A1 HK 1094279 A1 HK1094279 A1 HK 1094279A1 HK 07101261 A HK07101261 A HK 07101261A HK 1094279 A1 HK1094279 A1 HK 1094279A1
Authority
HK
Hong Kong
Prior art keywords
producing
same
semiconductor substrate
nitride semiconductor
gallium nitride
Prior art date
Application number
HK07101261.3A
Other languages
English (en)
Inventor
Masahiro Nakayama
Naoki Matsumoto
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of HK1094279A1 publication Critical patent/HK1094279A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
HK07101261.3A 2003-10-27 2007-02-01 Gallium nitride semiconductor substrate and process for producing the same HK1094279A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003365867 2003-10-27
PCT/JP2004/011683 WO2005041283A1 (ja) 2003-10-27 2004-08-06 窒化ガリウム系半導体基板と窒化ガリウム系半導体基板の製造方法

Publications (1)

Publication Number Publication Date
HK1094279A1 true HK1094279A1 (en) 2007-03-23

Family

ID=34510199

Family Applications (1)

Application Number Title Priority Date Filing Date
HK07101261.3A HK1094279A1 (en) 2003-10-27 2007-02-01 Gallium nitride semiconductor substrate and process for producing the same

Country Status (8)

Country Link
US (2) US20070018284A1 (xx)
EP (1) EP1679740A4 (xx)
JP (1) JP4479657B2 (xx)
KR (1) KR20060090827A (xx)
CN (2) CN100552888C (xx)
HK (1) HK1094279A1 (xx)
TW (1) TW200522187A (xx)
WO (1) WO2005041283A1 (xx)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9279193B2 (en) * 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
JP4232605B2 (ja) * 2003-10-30 2009-03-04 住友電気工業株式会社 窒化物半導体基板の製造方法と窒化物半導体基板
JP2006352075A (ja) 2005-05-17 2006-12-28 Sumitomo Electric Ind Ltd 窒化物系化合物半導体および化合物半導体の洗浄方法、これらの製造方法および基板
JP4277826B2 (ja) 2005-06-23 2009-06-10 住友電気工業株式会社 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
US8771552B2 (en) 2005-06-23 2014-07-08 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
US9708735B2 (en) 2005-06-23 2017-07-18 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
JP2007116057A (ja) * 2005-10-24 2007-05-10 Sumitomo Electric Ind Ltd 半導体素子の製造方法、半導体素子、半導体レーザ、面発光素子、および光導波路
JP2007234952A (ja) * 2006-03-02 2007-09-13 Sumitomo Electric Ind Ltd 化合物半導体基板の表面処理方法、化合物半導体の製造方法、化合物半導体基板、および半導体ウエハ
JP5157081B2 (ja) * 2006-04-24 2013-03-06 日亜化学工業株式会社 半導体発光素子及び半導体発光素子の製造方法
JP5218047B2 (ja) * 2006-04-28 2013-06-26 住友電気工業株式会社 窒化ガリウム結晶を作製する方法および窒化ガリウムウエハ
JP2008037705A (ja) * 2006-08-07 2008-02-21 Sumitomo Electric Ind Ltd ＧａｘＩｎ１−ｘＮ基板とＧａｘＩｎ１−ｘＮ基板の洗浄方法
US8283694B2 (en) * 2006-10-19 2012-10-09 Sumitomo Electric Industries, Ltd. GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
EP2080823B1 (en) * 2006-10-19 2020-03-25 Sumitomo Electric Industries, Ltd. Gan substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element
JP2008130799A (ja) * 2006-11-21 2008-06-05 Sharp Corp 半導体発光素子および半導体発光素子の製造方法
JP4321595B2 (ja) 2007-01-23 2009-08-26 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体基板の製造方法
EP1950326A1 (en) * 2007-01-29 2008-07-30 Interuniversitair Microelektronica Centrum Method for removal of bulk metal contamination from III-V semiconductor substrates
WO2009011100A1 (ja) * 2007-07-19 2009-01-22 Mitsubishi Chemical Corporation Iii族窒化物半導体基板およびその洗浄方法
JP5560528B2 (ja) * 2008-01-28 2014-07-30 住友電気工業株式会社 Ｉｉｉ族窒化物単結晶インゴットの製造方法、及びｉｉｉ族窒化物単結晶基板の製造方法
JP5575372B2 (ja) * 2008-03-04 2014-08-20 日立金属株式会社 窒化ガリウム基板
JP2009272380A (ja) * 2008-05-01 2009-11-19 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
CN101587859B (zh) * 2008-05-23 2011-03-23 中芯国际集成电路制造(北京)有限公司 形成半导体互联结构的方法
JP2009302409A (ja) * 2008-06-16 2009-12-24 Sumco Corp 半導体ウェーハの製造方法
JP5678402B2 (ja) * 2008-08-04 2015-03-04 住友電気工業株式会社 ショットキーバリアダイオードおよびその製造方法
EP2200077B1 (en) * 2008-12-22 2012-12-05 Soitec Method for bonding two substrates
JP4305574B1 (ja) 2009-01-14 2009-07-29 住友電気工業株式会社 Ｉｉｉ族窒化物基板、それを備える半導体デバイス、及び、表面処理されたｉｉｉ族窒化物基板を製造する方法
JP4513927B1 (ja) 2009-09-30 2010-07-28 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
JP5365454B2 (ja) * 2009-09-30 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
CN102148429B (zh) * 2010-02-06 2016-03-30 清华大学 纳米光学天线阵列的制造方法
TWI443741B (zh) * 2011-01-14 2014-07-01 Univ Nat Chiao Tung 一種平整化氮化物基板的方法
JP5265822B1 (ja) * 2011-07-28 2013-08-14 パナソニック株式会社 表面改質半導体及びその製造方法並びに粒子配置方法
CN102569065A (zh) * 2011-12-23 2012-07-11 重庆平伟实业股份有限公司 一种二极管芯片的酸洗工艺
JP5696734B2 (ja) * 2013-03-22 2015-04-08 住友電気工業株式会社 Ｉｉｉ族窒化物結晶基板、エピタキシャル層付ｉｉｉ族窒化物結晶基板および半導体デバイス
JP2014192353A (ja) * 2013-03-27 2014-10-06 Sumitomo Electric Ind Ltd 基板を処理する方法
EP2881982B1 (en) * 2013-12-05 2019-09-04 IMEC vzw Method for fabricating cmos compatible contact layers in semiconductor devices
JP6248359B2 (ja) * 2013-12-20 2017-12-20 住友電工デバイス・イノベーション株式会社 半導体層の表面処理方法
KR20150138479A (ko) 2014-05-29 2015-12-10 삼성전자주식회사 발광 소자 패키지의 제조 방법
WO2016013239A1 (ja) * 2014-07-22 2016-01-28 住友電気工業株式会社 化合物半導体を洗浄する方法、化合物半導体の洗浄用の溶液
JP6574104B2 (ja) * 2015-04-28 2019-09-11 一般財団法人ファインセラミックスセンター 窒化物系半導体のエッチング方法および窒化物系半導体の結晶欠陥検出方法
JP6038237B2 (ja) * 2015-06-18 2016-12-07 住友化学株式会社 窒化ガリウム基板の製造方法
US10186630B2 (en) * 2016-08-02 2019-01-22 QMAT, Inc. Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
DE102017121480B4 (de) * 2017-09-15 2024-04-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lichtemittierendes Halbleiterbauteil
CN110768106B (zh) * 2018-07-26 2021-01-26 山东华光光电子股份有限公司 一种激光二极管制备方法
US10867815B2 (en) * 2018-09-04 2020-12-15 Tokyo Electron Limited Photonically tuned etchant reactivity for wet etching
JP7056511B2 (ja) * 2018-10-25 2022-04-19 住友電気工業株式会社 面発光レーザの製造方法
CN110010461A (zh) * 2019-04-11 2019-07-12 中国科学院半导体研究所 氮化物材料的湿法腐蚀方法
CN110797259B (zh) * 2019-10-23 2022-03-29 中国电子科技集团公司第十三研究所 同质外延氮化镓衬底处理方法及氮化镓衬底
TWI741911B (zh) * 2020-12-16 2021-10-01 環球晶圓股份有限公司 磊晶層去除方法
CN113231386A (zh) * 2021-04-20 2021-08-10 南京纳科半导体有限公司 去除氮化镓表面污染物的方法及氮化镓基材

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5508829A (en) * 1992-12-18 1996-04-16 International Business Machines Corporation LTG AlGaAs non-linear optical material and devices fabricated therefrom
JP3398896B2 (ja) * 1994-12-06 2003-04-21 キヤノン販売株式会社 ドライエッチング方法
JP3649771B2 (ja) * 1995-05-15 2005-05-18 栗田工業株式会社 洗浄方法
JPH10233382A (ja) * 1997-02-17 1998-09-02 Hewlett Packard Co <Hp> 半導体の表面清浄方法
US6682402B1 (en) * 1997-04-04 2004-01-27 Rodel Holdings, Inc. Polishing pads and methods relating thereto
US6829273B2 (en) * 1999-07-16 2004-12-07 Agilent Technologies, Inc. Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2001244240A (ja) * 2000-02-25 2001-09-07 Speedfam Co Ltd 半導体ウエハの製造方法
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP3994640B2 (ja) * 2000-07-24 2007-10-24 松下電器産業株式会社 窒化ガリウム系化合物半導体成長用基板の洗浄方法
JP2002110688A (ja) * 2000-09-29 2002-04-12 Canon Inc Ｓｏｉの熱処理方法及び製造方法
EP1323188A1 (en) * 2000-10-06 2003-07-02 AOTI Operating Company, Inc. Method to detect surface metal contamination
JP3889933B2 (ja) * 2001-03-02 2007-03-07 シャープ株式会社 半導体発光装置
JP2002284600A (ja) * 2001-03-26 2002-10-03 Hitachi Cable Ltd 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
JP3711055B2 (ja) * 2001-09-25 2005-10-26 三洋電機株式会社 窒化物系半導体素子の形成方法
JP3957268B2 (ja) * 2002-01-17 2007-08-15 シルトロニック・ジャパン株式会社 半導体基板の洗浄方法
US6791120B2 (en) * 2002-03-26 2004-09-14 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
US6770536B2 (en) * 2002-10-03 2004-08-03 Agere Systems Inc. Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate
US6786390B2 (en) * 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
US7250114B2 (en) * 2003-05-30 2007-07-31 Lam Research Corporation Methods of finishing quartz glass surfaces and components made by the methods
JP3929939B2 (ja) * 2003-06-25 2007-06-13 株式会社東芝 処理装置、製造装置、処理方法及び電子装置の製造方法

Also Published As

Publication number Publication date
WO2005041283A1 (ja) 2005-05-06
KR20060090827A (ko) 2006-08-16
TW200522187A (en) 2005-07-01
JP4479657B2 (ja) 2010-06-09
CN1875465A (zh) 2006-12-06
EP1679740A1 (en) 2006-07-12
CN101661910B (zh) 2012-07-18
US20070018284A1 (en) 2007-01-25
CN101661910A (zh) 2010-03-03
CN100552888C (zh) 2009-10-21
TWI332236B (xx) 2010-10-21
JPWO2005041283A1 (ja) 2007-04-26
US20120135549A1 (en) 2012-05-31
EP1679740A4 (en) 2009-09-02

Similar Documents

Publication Publication Date Title
HK1094279A1 (en) Gallium nitride semiconductor substrate and process for producing the same
GB2416623B (en) Substrate of gallium nitride single crystal and process for producing the same
EP1655766A4 (en) SUBSTRATE FOR NITRITHAL SUPPLY GROWTH
EP1635396A4 (en) LAMINATED SEMICONDUCTOR SUBSTRATE AND PROCESS FOR ITS MANUFACTURE
AU2002354485A8 (en) Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
GB2393038B (en) Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device
SG112879A1 (en) Gan single crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
EP1542269A4 (en) HIGH RESISTANCE SILICON WAFER AND METHOD FOR PRODUCING SAME
TWI371782B (en) Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
EP1790759A4 (en) NITRIDE MONOCRYSTAL SEMICONDUCTOR COMPRISING Ga, METHOD FOR MANUFACTURING THE SAME, AND SUBSTRATE AND DEVICE USING THE CRYSTAL
AU7454501A (en) Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
AU2003298891A8 (en) Gallium nitride-based devices and manufacturing process
EP1736572A4 (en) GROUP III NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT
AU2003257717A1 (en) Nitride semiconductor led and fabrication method thereof
EP1501117A4 (en) SUBSTRATE FOR THE BREEDING OF GALLIUM NITRIDE, METHOD FOR THE PRODUCTION OF THE SUBSTRATE FOR THE BREEDING OF GALLIUM NITRIDE AND METHOD FOR THE PRODUCTION OF A GALLIUM NITRIDE SUBSTRATE
EP1801863A4 (en) SILICON EPITAXIAL WAFERS AND METHOD FOR THE PRODUCTION THEREOF
EP1620894A4 (en) SUBSTRATE, MANUFACTURING METHOD AND SEMICONDUCTOR COMPONENT
SG126899A1 (en) Light-emitting device, method for making the same,and nitride semiconductor substrate
SG135924A1 (en) Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate
EP1592045A4 (en) SILICON SUBSTRATE SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF
EP1622194A4 (en) SEMICONDUCTOR ELEMENT AND PROCESS FOR ITS MANUFACTURE
EP1465242A4 (en) SEMICONDUCTOR WAFERS AND METHOD FOR THE PRODUCTION THEREOF
EP1601009A4 (en) NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
AU2003209712A8 (en) Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
GB2419466B (en) Compound semiconductor and method for producing same

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20130806