CN1184299C - 光刻胶洗涤组合物 - Google Patents
光刻胶洗涤组合物 Download PDFInfo
- Publication number
- CN1184299C CN1184299C CNB001342371A CN00134237A CN1184299C CN 1184299 C CN1184299 C CN 1184299C CN B001342371 A CNB001342371 A CN B001342371A CN 00134237 A CN00134237 A CN 00134237A CN 1184299 C CN1184299 C CN 1184299C
- Authority
- CN
- China
- Prior art keywords
- ether
- glycol
- photoresist material
- cleaning composition
- material cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 54
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 106
- 238000004140 cleaning Methods 0.000 title claims description 48
- 239000000463 material Substances 0.000 claims abstract description 85
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000005260 corrosion Methods 0.000 claims abstract description 29
- 230000007797 corrosion Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 17
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 11
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 24
- -1 hydrofluoric acid amine Chemical class 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 18
- 238000004380 ashing Methods 0.000 claims description 17
- 239000003960 organic solvent Substances 0.000 claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 239000004210 ether based solvent Substances 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000003112 inhibitor Substances 0.000 claims description 11
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 9
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 claims description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 5
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 5
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 claims description 5
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 5
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 5
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 claims description 4
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 4
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 3
- UWIULCYKVGIOPW-UHFFFAOYSA-N Glycolone Natural products CCOC1=C(CC=CC)C(=O)N(C)c2c(O)cccc12 UWIULCYKVGIOPW-UHFFFAOYSA-N 0.000 claims description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 3
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 claims description 2
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 claims description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 2
- LJVNVNLFZQFJHU-UHFFFAOYSA-N 2-(2-phenylmethoxyethoxy)ethanol Chemical compound OCCOCCOCC1=CC=CC=C1 LJVNVNLFZQFJHU-UHFFFAOYSA-N 0.000 claims description 2
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- 150000003983 crown ethers Chemical class 0.000 claims description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 2
- 150000008442 polyphenolic compounds Chemical class 0.000 claims description 2
- 235000013824 polyphenols Nutrition 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 claims description 2
- 150000005846 sugar alcohols Chemical class 0.000 claims description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims 2
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 claims 1
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims 1
- RQUBQBFVDOLUKC-UHFFFAOYSA-N 1-ethoxy-2-methylpropane Chemical compound CCOCC(C)C RQUBQBFVDOLUKC-UHFFFAOYSA-N 0.000 claims 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims 1
- NAFPAOUIKZHXDV-UHFFFAOYSA-N 1-propan-2-yloxy-2-(2-propan-2-yloxypropoxy)propane Chemical compound CC(C)OCC(C)OCC(C)OC(C)C NAFPAOUIKZHXDV-UHFFFAOYSA-N 0.000 claims 1
- JOERQAIRIDZWHX-UHFFFAOYSA-N 1-propoxy-2-(2-propoxypropoxy)propane Chemical compound CCCOCC(C)OCC(C)OCCC JOERQAIRIDZWHX-UHFFFAOYSA-N 0.000 claims 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 claims 1
- 150000002222 fluorine compounds Chemical class 0.000 abstract description 7
- 239000002904 solvent Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 19
- 238000005406 washing Methods 0.000 description 19
- 229910000838 Al alloy Inorganic materials 0.000 description 16
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 16
- 239000000243 solution Substances 0.000 description 15
- 238000011010 flushing procedure Methods 0.000 description 14
- 229910018182 Al—Cu Inorganic materials 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000013522 chelant Substances 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- 239000012046 mixed solvent Substances 0.000 description 4
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- SPEUIVXLLWOEMJ-UHFFFAOYSA-N 1,1-dimethoxyethane Chemical compound COC(C)OC SPEUIVXLLWOEMJ-UHFFFAOYSA-N 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- SZNYYWIUQFZLLT-UHFFFAOYSA-N 2-methyl-1-(2-methylpropoxy)propane Chemical compound CC(C)COCC(C)C SZNYYWIUQFZLLT-UHFFFAOYSA-N 0.000 description 2
- JKTORXLUQLQJCM-UHFFFAOYSA-N 4-phosphonobutylphosphonic acid Chemical compound OP(O)(=O)CCCCP(O)(O)=O JKTORXLUQLQJCM-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- VEVZSMAEJFVWIL-UHFFFAOYSA-O cyanidin cation Chemical compound [O+]=1C2=CC(O)=CC(O)=C2C=C(O)C=1C1=CC=C(O)C(O)=C1 VEVZSMAEJFVWIL-UHFFFAOYSA-O 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N glutaric acid Chemical compound OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- WWIYWFVQZQOECA-UHFFFAOYSA-M tetramethylazanium;formate Chemical compound [O-]C=O.C[N+](C)(C)C WWIYWFVQZQOECA-UHFFFAOYSA-M 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- PFTAWBLQPZVEMU-DZGCQCFKSA-N (+)-catechin Chemical compound C1([C@H]2OC3=CC(O)=CC(O)=C3C[C@@H]2O)=CC=C(O)C(O)=C1 PFTAWBLQPZVEMU-DZGCQCFKSA-N 0.000 description 1
- ILZHHPCAMLILSP-UHFFFAOYSA-N 2-(dimethylamino)ethanol;hydrofluoride Chemical compound [F-].C[NH+](C)CCO ILZHHPCAMLILSP-UHFFFAOYSA-N 0.000 description 1
- PTOKDFKDUYQOAK-UHFFFAOYSA-N 2-aminoethanol;hydrofluoride Chemical compound F.NCCO PTOKDFKDUYQOAK-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- JTWWLFIDGOXEGI-UHFFFAOYSA-N C(=NO)C=NO.C1(=CC=CC=C1)C1=CC=CC=C1 Chemical compound C(=NO)C=NO.C1(=CC=CC=C1)C1=CC=CC=C1 JTWWLFIDGOXEGI-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- MPWRABSFFDBSMJ-UHFFFAOYSA-N F.CC(O)CN Chemical compound F.CC(O)CN MPWRABSFFDBSMJ-UHFFFAOYSA-N 0.000 description 1
- 229930091371 Fructose Natural products 0.000 description 1
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- 239000005715 Fructose Substances 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- LKDRXBCSQODPBY-AMVSKUEXSA-N L-(-)-Sorbose Chemical compound OCC1(O)OC[C@H](O)[C@@H](O)[C@@H]1O LKDRXBCSQODPBY-AMVSKUEXSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 1
- SPFXQZBXVCUHTR-UHFFFAOYSA-N P(O)(O)=O.OCC Chemical class P(O)(O)=O.OCC SPFXQZBXVCUHTR-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
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- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种光刻胶洗涤组合物包括0.001-0.5%重量氟化合物,50-99%重量醚溶剂和余量是水。由于含有这种特定含量范围的醚溶剂,该光刻胶洗涤组合物在冲洗步骤中用水稀释时表现出减小腐蚀性并可以完全去除光刻胶残余物而不腐蚀电路材料和基片材料。
Description
本发明涉及一种用于生产半导体集成电路的光刻胶洗涤组合物,并具体涉及一种在蚀刻或灰化后除去光刻胶残余物的光刻胶洗涤组合物。
半导体元件如IC和LSI,以及液晶板元件一般是通过以下步骤生产:在无机基片上形成光刻胶膜;通过曝光将光刻胶膜图案化并随后显影;反应性气体干蚀图案化的光刻胶膜作为掩膜的无机基片的未掩蔽的部分;灰化光刻胶膜;并从无机基片上除去光刻胶残余物(保护性沉积膜)。由于通常使用卤素反应性气体对图案化的光刻胶膜的无机基片进行干蚀,因此卤素活性气体和光刻胶反应产生不需要的光刻胶残余物。光刻胶残余物有可能引起各种问题如断路和反常的接线,因此必须将其完全除去。
通常使用碱性洗涤溶液去除光刻胶残余物。建议使用碱性洗涤溶液是含有链烷醇胺或聚亚烷基多胺的环氧乙烷加成物,砜化合物和乙二醇一烷基醚(日本专利申请公开No.62-49355)的洗涤溶液;洗涤溶液含有二甲基亚砜作为主要成分,以及二乙二醇一烷基醚和含氮有机羟基化合物(日本专利申请公开No.64-42653);等。然而,由于使用过程中吸收水的作用从加成物中释放出胺因此这些碱性洗涤溶液呈碱性,或在洗涤处理后清洗过程中如果使用水代替有机溶剂如醇进行清洗则呈碱性,因此可能引起普遍用作组成精密电路的铝等材料的严重腐蚀。因此,已知的洗涤溶液并不适用于要求新的严格尺寸精度的微处理技术。
由于具有高洗涤性能并使用简便,近来使用含氟化合物,酰胺,二甲基亚砜(DMSO)溶剂和腐蚀抑制剂的水溶液作为洗涤溶液(日本专利申请公开No.8-202052和美国专利No.5,962,385)。然而,洗涤处理后用水冲洗过程中这些含氟光刻胶洗涤溶液会腐蚀铝制线路。也就是说,用水稀释时这些洗涤溶液对电路材料具有高腐蚀性。此外,当用有机溶剂冲洗含氟光刻胶洗涤溶液时会有氟化合物沉积。因此,洗涤处理后仅用有机溶剂冲洗含氟光刻胶洗涤溶液除去光刻胶残余物是不够的。
为解决现有技术中的上述问题而完成了本发明,即本发明的目的是提供一种光刻胶洗涤组合物,该组合物可以完全除去生产半导体元件如IC和LSI或液晶板元件的电路过程中蚀刻或灰化后留下的光刻胶残余物,短时间低温冲洗过程中并不引起电路材料的腐蚀。本发明的另一个目的是提供一种半导体元件生产方法,该方法包括光刻胶洗涤组合物处理后使用冲洗溶液对半导体元件进行冲洗处理。
针对上述目的进行了大量研究,本发明人发现含有0.001-0.5%重量氟化合物和50-99%重量,特别是81-99%重量的醚溶剂的水溶液适于作为光刻胶洗涤组合物,因为它可以很容易地除去蚀刻或灰化后留下的光刻胶残余物并对电路材料等没有任何腐蚀以及水溶液处理后冲洗过程中对电路也没有腐蚀。基于上述发现实现了本发明。
因此,本发明提供了一种光刻胶洗涤组合物,其包括0.001-0.5%重量的氟化合物和50-99%重量的醚溶剂,余量基本是水。
另外本发明提供了一种半导体元件生产方法,包括以下步骤:(1)在无机基片上沉积的薄导电膜上形成光刻胶膜,(2)将光刻胶膜图案化,(3)使用图案化的树脂膜作为掩膜蚀刻薄导电膜,(4)将光刻胶残余物与上述的光刻胶洗涤组合物接触除去蚀刻后残留的光刻胶残余物,和(5)用可溶于水的有机溶剂或可溶于水的有机溶剂和水的混合溶剂冲洗所得元件。
本发明还进一步提供了一种半导体元件生产方法,包括以下步骤(1)在无机基片上沉积的薄导电膜上形成光刻胶膜,(2)将所述的光刻胶膜图案化,(3)使用图案化的光刻胶膜作为掩膜蚀刻薄导电膜,(4)灰化图案化的光刻胶膜,(5)将光刻胶残余物与上述的光刻胶洗涤组合物接触除去灰化后残留的光刻胶残余物和(6)用可溶于水的有机溶剂或可溶于水的有机溶剂和水的混合溶剂冲洗所得元件。
图1是氧-等离子体灰化后,洗涤前Al-Cu合金电路板透视局部剖视图;
图2曲线表示光刻胶洗涤组合物的腐蚀特性与水稀释程度的关系图
本发明使用的氟化合物是氢氟酸,氟化铵类和氢氟酸胺类包括氟化铵,酸性氟化铵,甲胺氢氟酸,乙胺氢氟酸,丙胺氢氟酸,氟化四甲基铵,氟化四乙基铵,乙醇胺氢氟酸,甲基乙醇胺氢氟酸,二甲基乙醇胺氢氟酸,羟胺氢氟酸,二甲基羟胺氢氟酸,三亚乙基二胺氢氟酸等。这些氟化合物中,优选氟化铵和氟化四甲基铵,以及更优选氟化铵。这些氟化合物可以一种或两种或多种结合使用。
以光刻胶洗涤组合物总重量计,含有0.001-0.5%重量的氟化合物。当氟化合物含量大于0.5%重量时,冲洗处理过程中腐蚀严重。通过将氟化合物含量调整至0.5%重量范围内或更低,可以明显降低冲洗处理过程中腐蚀的发生,特别是,用水稀释时光刻胶洗涤组合物的最大腐蚀程度明显降低。
本发明使用的醚溶剂是至少带一个醚键的化合物。醚溶剂实施例包括二醇醚类如乙二醇一甲醚,乙二醇一乙醚,乙二醇一丁醚,乙二醇二甲醚,乙二醇二乙醚,二乙二醇一甲醚,二乙二醇一乙醚,二乙二醇一丙醚,二乙二醇一异丙醚,二乙二醇一丁醚,二乙二醇一异丁醚,二乙二醇一苄醚,二乙二醇二甲醚,二乙二醇二乙醚,三乙二醇一甲醚,三乙二醇二甲醚,聚乙二醇一甲醚,二乙二醇甲乙醚,三乙二醇,乙二醇一甲醚乙酸酯,乙二醇一乙醚乙酸酯,丙二醇一甲醚,丙二醇二甲醚,丙二醇一丁醚,二丙二醇一甲醚,二丙二醇一丙醚,二丙二醇一异丙醚,二丙二醇一丁醚,二丙二醇二甲醚,二丙二醇二丙醚,二丙二醇二异丙醚,三丙二醇和三丙二醇一甲醚,1-甲氧基-2-丁醇,2-甲氧基-1-丁醇,2-甲氧基-2-甲基丁醇,二噁烷,三噁烷,1,1-二甲氧基乙烷,四氢呋喃,冠醚等。这些醚溶剂中,优选二醇醚,因为它们易于应用和易于处理。更优选二乙二醇一甲醚,二乙二醇一丁醚,二乙二醇二甲醚,三乙二醇一甲醚,和二丙二醇一甲醚。这些醚溶剂可以一种或两种或多种混合使用。
以光刻胶洗涤组合物总重量计,含有50-99%重量,优选70-99%重量,更优选81-99%重量的醚溶剂。当醚溶剂含量小于50%重量时,冲洗处理过程不能有效地使电路材料的腐蚀最小化,也就是说,当用水稀释时光刻胶洗涤组合物的最大腐蚀程度也不可能得到充分降低。
本发明光刻胶洗涤组合物中水的含量是根据氟化合物和醚溶剂的含量以及可选的腐蚀抑制剂和其他可选的添加剂的加入量而确定,以便加至100%重量。
本发明的光刻胶洗涤组合物可含有腐蚀抑制剂,它包括糖类如果糖,葡萄糖,半乳糖和山梨糖;糖醇类如山梨糖醇,木糖醇和赤藓醇;多酚类如倍单宁,鞣花单宁,儿茶素和亲花色素(proanthocyan);以及叔铵盐如氢氧化四甲铵,碳酸四甲铵和甲酸四甲铵。
本发明的光刻胶洗涤组合物可进一步含有腐蚀抑制剂,它可以包括芳族羟基化合物如儿茶酚,苯酚和联苯三酚;含羧基有机化合物如甲酸,乙酸,丙酸,丁酸,异丁酸,乙二酸,丙二酸,琥珀酸,戊二酸,马来酸,富马酸,苯甲酸,苯二甲酸,1,2,3-苯三羧酸,乙醇酸,乳酸,苹果酸,柠檬酸,乙酸酐,苯二甲酸酐,马来酸酐,琥珀酸酐和水杨酸;由上述的含羧基有机化合物和碱性物质如乙醇胺,三甲基胺,二乙基胺和吡啶衍生出的含羧基有机化合物的有机盐;以及螯合物如基于磷酸的螯合化合物如1,2-丙烷二胺四亚甲基膦酸和羟乙烷膦酸,基于羧酸的螯合化合物如乙二胺四乙酸,二羟乙基甘氨酸和次氮基三乙酸,基于胺的螯合化合物如联吡啶,四苯基卟啉和菲咯啉,以及基于肟的螯合化合物如二甲基乙二肟和二苯基乙二肟。
这些腐蚀抑制剂可以一种或两种或多种混合使用,其含量通常为光刻胶洗涤组合物总重的约0.01-30%重量。
另外,本发明光刻胶洗涤组合物可含有阳离子,阴离子或非离子表面活性剂,其含量通常为光刻胶洗涤组合物总重的约0.001-5%重量。
本发明光刻胶洗涤组合物可以通过已知方法制备。例如,将氟化合物,醚溶剂,水和可选的一种或多种组分机械混合形成均匀液体。组分加入的次序并不重要,各组分可以顺序加入或所有组分同时混合。如必要可以加热来获得均匀液体。
本发明半导体元件的生产方法包括以下步骤:在无机基片上沉积的薄导电膜上形成光刻胶膜;将光刻胶膜图案化;使用图案化的光刻胶膜作为掩膜蚀刻薄导电膜;将蚀刻后的基片与光刻胶洗涤组合物接触除去蚀刻后残留的光刻胶残余物;并用冲洗溶液冲洗处理过的基片。另一方面,蚀刻后可以将图案化的光刻胶膜灰化,然后使用光刻胶洗涤组合物除去残留的光刻胶残余物。形成图案化的光刻胶膜,洗涤和灰化的实际条件与本领域公知和应用的方法相同。洗涤条件,例如洗涤温度,洗涤时间,使用的光刻胶洗涤组合物数量等根据需去除的光刻胶残余物的性质和厚度以及本领域技术人员熟知的其它因素而很容易地确定。在常温或如必要加热条件下优选将基片与光刻胶洗涤组合物接触,有效洗涤时间一般为0.2-30分钟。
作为冲洗溶液,可以使用溶于水的有机溶剂如甲醇,乙醇,异丙醇,二甲基乙酰胺,二甲基亚砜(DMSO),二醇醚和乙醇胺,或上述任意溶于水的有机溶剂和纯水组成的混合溶剂。另外,可以单独使用纯水作为冲洗溶液。使用本发明光刻胶洗涤组合物,即使仅用溶于水的有机溶剂冲洗就能充分地完全除去光刻胶残余物而没有氟化合物沉积。
本发明方法中,当可溶于水的有机溶剂或可溶于水的有机溶剂和水的混合溶剂用作冲洗溶液时,光刻胶洗涤组合物用水稀释后腐蚀性显著降低。特别是,仅用可溶于水的有机溶剂作为冲洗溶液时,冲洗过程不发生腐蚀。
本发明洗涤方法使用的无机基片材料可以是半导体或电路材料如硅,无定形硅,多晶硅,氧化硅,氮化硅,铝,铝合金,钛,钛-钨,氮化钛,钨,钽,氧化钽,钽合金,铬,三氧化二铬,铬合金和ITO(氧化铟锡);半导体化合物如镓-砷,镓-磷和铟-磷;或LCD基片玻璃。
现参考以下实施例详述本发明。然而,应注意以下实施例仅作为解释说明绝非限制本发明。
实施例1
图1是干蚀和氧等离子体灰化后透视Al-合金(Al-0.5%Cu)电路板的局部剖视图。在硅基片1上形成氧化膜2。在氧化膜2上,依次形成钛阻挡层3,氮化钛阻挡层4,Al-合金膜和氮化钛阻挡层6。用图案化的光刻胶膜作为掩膜通过干蚀Al-合金膜形成Al-合金电路5,随后用氧等离子体灰化图案化的光刻胶膜。氧等离子体灰化后Al-合金电路5的侧壁上留有光刻胶残余物7。
将Al-合金电路板在含70%重量二乙二醇一甲醚,0.5%重量氟化铵和余量是水的溶液中于室温浸渍10分钟,用纯水冲洗然后干燥。而后,扫描电镜(SEM)下观察干燥的电路板以评估电路板侧壁上残留的光刻胶残余物的去除情况和Al-合金层表面的腐蚀情况。结果,可以肯定光刻胶残余物完全除去并且在电路板上没有发现腐蚀。
图2显示了Al合金电路板与用纯水稀释成各种比例的光刻胶洗涤组合物接触时Al-Cu的蚀刻率。在图2中,横坐标表示稀释度,即稀释度“1”代表初始浓度,稀释度“2”代表初始浓度的一半等。纵坐标表示Al-Cu的蚀刻率。如图2所示,可以肯定水稀释的光刻胶洗涤组合物的最大蚀刻率约为12A/min。
实施例2-10
除按照表1所示改变光刻胶洗涤组合物的组成外,重复实施例1的同样步骤。结果列于表1其中各种稀释度的蚀刻率用A,B或C表示,这里的A和B分别对应于图2中的A和B曲线以及C表示没有观察到Al-Cu蚀刻。
表1
实施例序号 醚溶剂 氟化合物 添加物 水
2 MDG90% NH4F0.2% - 9.8%
3 BDG85% NH4F0.05% - 14.95%
4 DMDG85% NH4F0.05% - 14.95%
5 MTG85% NH4F0.2% - 14.8%
6 MDG90% NH4F0.2% PDTP0.01% 9.79%
7 MDG85% NH4F0.2% TMAF0.1% 14.79%
8 MDG85% NH4F0.2% - 14.7995%
EAHF0.0005%
9 MDP75% NH4F0.05% - 24.95%
10 MDG85% NH4F0.2% PRA0.1% 14.7%
MDG:二乙二醇一甲醚
BDG:二乙二醇一丁醚
MTG:三乙二醇一甲醚
DMDG:二乙二醇二甲醚
MDP:二丙二醇一甲醚
EAHF:乙醇胺氢氟酸
PDTP:丙烷二胺四亚甲基膦酸
TMAF:甲酸四甲铵
PRA:丙酸
表1(续)
实施例序号 除去情况 Al的腐蚀 稀释时Al-Cu蚀刻
速度
2 完全除去 没有 B
3 完全除去 没有 C
4 完全除去 没有 C
5 完全除去 没有 B
6 完全除去 没有 B
7 完全除去 没有 B
8 完全除去 没有 B
9 完全除去 没有 C
10 完全除去 没有 B
实施例11
灰化后将Al-合金电路板在含70%重量二乙二醇一甲醚,0.5%重量氟化铵和余量是水的溶液中于室温浸渍10分钟,仅用异丙醇冲洗然后干燥。而后,以实施例1所述的同样方法评估干燥的电路板。结果,可以肯定光刻胶残余物被完全除去。
实施例12
灰化后将Al-合金电路板在含70%重量二乙二醇一甲醚,0.5%重量氟化铵和余量是水的溶液中于室温浸渍10分钟,用异丙醇/水=4/1的混合溶液冲洗然后干燥。而后,以实施例1所述的同样方法评估干燥的电路板。结果,可以肯定光刻胶残余物被完全除去。
对比实施例1
将Al-合金电路板在含69%重量二甲基甲酰胺(DMF),1%重量氟化铵和余量是水的溶液中于室温浸10分钟,仅用异丙醇冲洗然后干燥。而后,扫描电镜(SEM)下观察干燥的电路板以评估电路板侧壁上残留的光刻胶残余物的去除情况和Al-合金层表面的腐蚀情况。结果,可以肯定光刻胶残余物仍然存在没有除去并且腐蚀了Al-合金层表面。
图2显示了用水稀释成各种比例的光刻胶洗涤组合物的Al-Cu的蚀刻率。
对比实施例2
图2显示了用水稀释成各种比例的光刻胶洗涤组合物的Al-Cu的蚀刻率。溶液的初始组成为75%重量二乙二醇一甲醚,1%重量氟化铵和其余是水。
对比实施例3
将Al-合金电路板室温下在0.5重量%氟化铵水溶液中浸10分钟,用水冲洗然后干燥。而后,以实施例1所述的同样方法评估干燥的电路板。结果,肯定光刻胶残余物仍然存在未除去并且腐蚀了Al-合金层表面。
实施例13-22
除使用Cu替代Al-Cu合金制成线路的电路板外,重复实施例1-10的同样步骤。用水稀释的光刻胶洗涤组合物的最大的Cu蚀刻率列于表2。
表2
实施例序号 最大的Cu蚀刻速度(A/min)
13 <1
14 <1
15 <1
16 <1
17 <1
18 <1
19 <1
20 <1
21 <1
22 <1
如上所述,使用本发明的光刻胶洗涤组合物可以很容易地除去蚀刻或灰化后留下的光刻胶残余物并对电路材料等没有任何腐蚀,以及有效地减少了水冲洗过程中含Al电路材料的腐蚀。
Claims (13)
1.一种光刻胶洗涤组合物,包括0.001-0.5%重量氟化合物,50-99%重量醚溶剂及余量基本是水,其中所述的氟化合物选自氢氟酸、氟化铵和氢氟酸胺中的至少一种化合物,其中所述醚溶剂选自二醇醚、1-甲氧基-2-丁醇、2-甲氧基-1-丁醇、2-甲氧基-2-甲基丁醇、二噁烷、三噁烷、1、1-二甲氧基乙烷、四氢呋喃和冠醚中的至少一种化合物。
2.权利要求1的光刻胶洗涤组合物,其中所述氟化合物是氟化铵。
3.权利要求1或2的光刻胶洗涤组合物,其中所述醚溶剂是至少一种二醇醚。
4.权利要求3的光刻胶洗涤组合物,其中所述的至少一种二醇醚是选自下列化合物组:乙二醇一甲醚,乙二醇一乙醚,乙二醇一丁醚,乙二醇二甲醚,乙二醇二乙醚,二乙二醇一甲醚,二乙二醇一乙醚,二乙二醇一丙醚,二乙二醇一异丙醚,二乙二醇一丁醚,二乙二醇一异丁醚,二乙二醇一苄醚,二乙二醇二甲醚,二乙二醇二乙醚,三乙二醇一甲醚,三乙二醇二甲醚,聚乙二醇一甲醚,二乙二醇甲乙醚,三乙二醇,乙二醇一甲醚乙酸酯,乙二醇一乙醚乙酸酯,丙二醇一甲醚,丙二醇二甲醚,丙二醇一丁醚,二丙二醇一甲醚,二丙二醇一丙醚,二丙二醇一异丙醚,二丙二醇一丁醚,二丙二醇二甲醚,二丙二醇二丙醚,二丙二醇二异丙醚,三丙二醇和三丙二醇一甲醚。
5.权利要求3的光刻胶洗涤组合物,其中所述至少一种二醇醚选自下列一组化合物:二乙二醇一甲醚,二乙二醇一丁醚,二乙二醇二甲醚,三乙二醇一甲醚,和二丙二醇一甲醚。
6.权利要求1或2的光刻胶洗涤组合物,还包括腐蚀抑制剂。
7.权利要求3的光刻胶洗涤组合物,还包括腐蚀抑制剂。
8.权利要求4的光刻胶洗涤组合物,还包括腐蚀抑制剂。
9.权利要求5的光刻胶洗涤组合物,还包括腐蚀抑制剂。
10.权利要求6的光刻胶洗涤组合物,其中所述腐蚀抑制剂是选自芳族羟基化合物,含羧基有机化合物,含羧基有机化合物的有机盐和螯合物中的至少一种化合物。
11.权利要求6的光刻胶洗涤组合物,其中所述腐蚀抑制剂是选自糖,糖醇,多酚和叔铵盐中的至少一种化合物。
12.一种半导体元件的生产方法,包括以下步骤:
在无机基片上沉积的薄导电膜上形成光刻胶膜;
将上述光刻胶膜图案化;
使用图案化的光刻胶膜作为掩膜蚀刻薄导电膜;
将光刻胶残余物与权利要求1-11中任一项的光刻胶洗涤组合物接触除去蚀刻后残留的光刻胶残余物;以及
用可溶于水的有机溶剂或可溶于水的有机溶剂和水的混合溶液冲洗上述基片。
13.一种半导体元件的生产方法,包括以下步骤:
在无机基片上沉积的薄导电膜上形成光刻胶膜;
将上述光刻胶膜图案化;
使用图案化的光刻胶膜作为掩膜蚀刻薄导电膜;
灰化图案化的光刻胶膜;
将光刻胶残余物与权利要求1-11中任一项的光刻胶洗涤组合物接触除去灰化后残留的光刻胶残余物;以及
用可溶于水的有机溶剂或可溶于水的有机溶剂和水的混合溶液冲洗上述基片。
Applications Claiming Priority (2)
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JP275200/1999 | 1999-09-28 | ||
JP27520099A JP2001100436A (ja) | 1999-09-28 | 1999-09-28 | レジスト剥離液組成物 |
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CN1296064A CN1296064A (zh) | 2001-05-23 |
CN1184299C true CN1184299C (zh) | 2005-01-12 |
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US (1) | US6372410B1 (zh) |
EP (1) | EP1091254B1 (zh) |
JP (1) | JP2001100436A (zh) |
KR (1) | KR100859900B1 (zh) |
CN (1) | CN1184299C (zh) |
DE (1) | DE60041430D1 (zh) |
SG (1) | SG97932A1 (zh) |
TW (1) | TW557420B (zh) |
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-
1999
- 1999-09-28 JP JP27520099A patent/JP2001100436A/ja active Pending
-
2000
- 2000-09-11 EP EP00119370A patent/EP1091254B1/en not_active Expired - Lifetime
- 2000-09-11 DE DE60041430T patent/DE60041430D1/de not_active Expired - Lifetime
- 2000-09-12 SG SG200005155A patent/SG97932A1/en unknown
- 2000-09-21 KR KR1020000055425A patent/KR100859900B1/ko active IP Right Grant
- 2000-09-25 US US09/668,473 patent/US6372410B1/en not_active Expired - Lifetime
- 2000-09-27 TW TW089119938A patent/TW557420B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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DE60041430D1 (de) | 2009-03-12 |
TW557420B (en) | 2003-10-11 |
CN1296064A (zh) | 2001-05-23 |
EP1091254A2 (en) | 2001-04-11 |
KR100859900B1 (ko) | 2008-09-23 |
SG97932A1 (en) | 2003-08-20 |
EP1091254B1 (en) | 2009-01-21 |
KR20010030460A (ko) | 2001-04-16 |
JP2001100436A (ja) | 2001-04-13 |
EP1091254A3 (en) | 2001-05-09 |
US6372410B1 (en) | 2002-04-16 |
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