DE60041430D1 - Zusammensetzung zur Entfernung von Photoresist - Google Patents

Zusammensetzung zur Entfernung von Photoresist

Info

Publication number
DE60041430D1
DE60041430D1 DE60041430T DE60041430T DE60041430D1 DE 60041430 D1 DE60041430 D1 DE 60041430D1 DE 60041430 T DE60041430 T DE 60041430T DE 60041430 T DE60041430 T DE 60041430T DE 60041430 D1 DE60041430 D1 DE 60041430D1
Authority
DE
Germany
Prior art keywords
composition
removing photoresist
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60041430T
Other languages
English (en)
Inventor
Kazuto Ikemoto
Kojiro Abe
Tetsuo Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Application granted granted Critical
Publication of DE60041430D1 publication Critical patent/DE60041430D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/268—Carbohydrates or derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3227—Ethers thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Molecular Biology (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
DE60041430T 1999-09-28 2000-09-11 Zusammensetzung zur Entfernung von Photoresist Expired - Lifetime DE60041430D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27520099A JP2001100436A (ja) 1999-09-28 1999-09-28 レジスト剥離液組成物

Publications (1)

Publication Number Publication Date
DE60041430D1 true DE60041430D1 (de) 2009-03-12

Family

ID=17552090

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041430T Expired - Lifetime DE60041430D1 (de) 1999-09-28 2000-09-11 Zusammensetzung zur Entfernung von Photoresist

Country Status (8)

Country Link
US (1) US6372410B1 (de)
EP (1) EP1091254B1 (de)
JP (1) JP2001100436A (de)
KR (1) KR100859900B1 (de)
CN (1) CN1184299C (de)
DE (1) DE60041430D1 (de)
SG (1) SG97932A1 (de)
TW (1) TW557420B (de)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7144848B2 (en) * 1992-07-09 2006-12-05 Ekc Technology, Inc. Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal
TWI288777B (en) * 2000-04-26 2007-10-21 Daikin Ind Ltd Detergent composition
KR100393118B1 (ko) * 2001-02-22 2003-07-31 현만석 반도체 소자의 레지스트 패턴 형성 방법 및 이 방법에서 사용되는 반도체 웨이퍼 세척액
KR100410611B1 (ko) * 2001-04-03 2003-12-18 동우 화인켐 주식회사 스트립후 세정제
JP2002303993A (ja) * 2001-04-04 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US20050096246A1 (en) * 2003-11-04 2005-05-05 Johnson Robert C. Solvent compositions containing chlorofluoroolefins
US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
TWI297102B (en) 2001-08-03 2008-05-21 Nec Electronics Corp Removing composition
KR20030011480A (ko) * 2001-08-03 2003-02-11 주식회사 덕성 포토레지스트용 박리액 조성물
JP4661007B2 (ja) * 2001-08-23 2011-03-30 昭和電工株式会社 サイドウォール除去液
US6457479B1 (en) * 2001-09-26 2002-10-01 Sharp Laboratories Of America, Inc. Method of metal oxide thin film cleaning
JP2003122028A (ja) * 2001-10-17 2003-04-25 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
JP2003129089A (ja) * 2001-10-24 2003-05-08 Daikin Ind Ltd 洗浄用組成物
JP3820545B2 (ja) 2001-12-04 2006-09-13 ソニー株式会社 レジスト剥離用組成物及びそれを用いた半導体装置の製造方法
JP4252758B2 (ja) * 2002-03-22 2009-04-08 関東化学株式会社 フォトレジスト残渣除去液組成物
KR100444345B1 (ko) * 2002-03-28 2004-08-16 테크노세미켐 주식회사 평판디스플레이의 박막트랜지스터 형성을 위한 금속전극용식각액 조성물
US6652665B1 (en) * 2002-05-31 2003-11-25 International Business Machines Corporation Method of removing silicone polymer deposits from electronic components
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
JP4443864B2 (ja) * 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
US6849200B2 (en) * 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
JP2009031791A (ja) * 2002-08-14 2009-02-12 Sony Corp レジスト用剥離剤組成物及び半導体装置の製造方法
US7166419B2 (en) 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
KR20040041019A (ko) * 2002-11-08 2004-05-13 스미또모 가가꾸 고오교오 가부시끼가이샤 반도체 기판용 세정액
US7399365B2 (en) * 2003-04-18 2008-07-15 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
US20050003978A1 (en) * 2003-05-28 2005-01-06 Lonza Inc. Quaternary ammonium carbonates and bicarbonates as anticorrosive agents
US20050012077A1 (en) * 2003-05-28 2005-01-20 Lonza Inc. Quaternary ammonium carbonates and bicarbonates as anticorrosive agents
US20060261312A1 (en) * 2003-05-28 2006-11-23 Lonza Inc. Quaternary ammonium salts containing non-halogen anions as anticorrosive agents
US20050089489A1 (en) * 2003-10-22 2005-04-28 Carter Melvin K. Composition for exfoliation agent effective in removing resist residues
JP5162131B2 (ja) * 2003-10-28 2013-03-13 サッチェム， インコーポレイテッド 洗浄溶液およびエッチング液、ならびにそれらを用いる方法
CN1938412A (zh) * 2003-12-02 2007-03-28 高级技术材料公司 剥离抗蚀剂、barc和填隙材料的化学制剂及方法
JP2005268605A (ja) * 2004-03-19 2005-09-29 Daikin Ind Ltd ＳｉＮ膜の選択エッチング液及びエッチング方法
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
US9217929B2 (en) 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
KR100634401B1 (ko) * 2004-08-03 2006-10-16 삼성전자주식회사 반도체 제조공정의 기판 처리 방법
JP4463054B2 (ja) * 2004-09-17 2010-05-12 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いた基板の処理方法
MY148568A (en) * 2004-12-09 2013-04-30 Lonza Ag Quaternary ammonium salts as a conversion coating or coating enhancement
WO2006137497A1 (ja) * 2005-06-24 2006-12-28 Mitsubishi Gas Chemical Company, Inc. メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法
KR100655647B1 (ko) * 2005-07-04 2006-12-08 삼성전자주식회사 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법
TWI339780B (en) * 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
KR20070035722A (ko) * 2005-09-28 2007-04-02 동우 화인켐 주식회사 포토레지스트 박리 조성물 및 이를 이용한 반도체 소자의제조방법
TW200722505A (en) * 2005-09-30 2007-06-16 Rohm & Haas Elect Mat Stripper
EP1949424A2 (de) * 2005-10-05 2008-07-30 Advanced Technology Materials, Inc. Zusammensetzung und verfahren zum selektiven ätzen von gate-abstandsschicht-oxidmaterial
US8263539B2 (en) 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US20070243773A1 (en) * 2005-10-28 2007-10-18 Phenis Michael T Dynamic multi-purpose composition for the removal of photoresists and method for its use
US7632796B2 (en) * 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
WO2007063767A1 (ja) * 2005-12-01 2007-06-07 Mitsubishi Gas Chemical Company, Inc. 半導体素子又は表示素子用洗浄液および洗浄方法
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
KR100742122B1 (ko) * 2006-01-31 2007-07-24 주식회사 동진쎄미켐 컬러잉크 제거용 씬너 조성물
US20070219105A1 (en) * 2006-03-17 2007-09-20 Georgia Tech Research Corporation Ionic Additives to Solvent-Based Strippers
US20090250653A1 (en) 2006-08-07 2009-10-08 Kiely Donald E Hydroxycarboxylic Acids and Salts
CA2660389C (en) 2006-08-07 2014-12-02 The University Of Montana Method for the preparation of organic acids via oxidization using nitric acid
US20080096785A1 (en) * 2006-10-19 2008-04-24 Air Products And Chemicals, Inc. Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue
WO2008090418A1 (en) * 2007-01-22 2008-07-31 Freescale Semiconductor, Inc. Liquid cleaning composition and method for cleaning semiconductor devices
US20090029274A1 (en) * 2007-07-25 2009-01-29 3M Innovative Properties Company Method for removing contamination with fluorinated compositions
JP2010535422A (ja) * 2007-08-02 2010-11-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロ電子デバイスから残渣を除去するための非フッ化物含有組成物
US7655608B2 (en) * 2007-08-03 2010-02-02 Dynaloy, Llc Reduced metal etch rates using stripper solutions containing a copper salt
US8551682B2 (en) 2007-08-15 2013-10-08 Dynaloy, Llc Metal conservation with stripper solutions containing resorcinol
CN101412949A (zh) * 2007-10-19 2009-04-22 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗液
EP2209835A2 (de) 2007-11-15 2010-07-28 The University Of Montana Hydroxypolyamidgel bildende mittel
US20090229629A1 (en) * 2008-03-14 2009-09-17 Air Products And Chemicals, Inc. Stripper For Copper/Low k BEOL Clean
TWI450052B (zh) * 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
JP5206177B2 (ja) * 2008-07-09 2013-06-12 三菱瓦斯化学株式会社 レジスト剥離液組成物およびそれを用いた半導体素子の製造方法
US20100178887A1 (en) 2009-01-13 2010-07-15 Millam Michael J Blast shield for use in wireless transmission system
US8444768B2 (en) 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
US8309502B2 (en) * 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
SG178611A1 (en) * 2009-09-02 2012-03-29 Wako Pure Chem Ind Ltd Processing agent composition for semiconductor surface and method for processing semiconductor surface using same
CN101770098B (zh) * 2010-01-29 2014-06-11 东莞市亚马电子有限公司 一种液晶模组的重工流程
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
CN101838111B (zh) * 2010-05-20 2012-06-27 合肥茂丰电子科技有限公司 玻璃基板蚀刻液及其制备方法
KR101114502B1 (ko) * 2010-06-28 2012-02-24 램테크놀러지 주식회사 세정용 조성물 및 이를 이용한 반도체 패턴의 형성방법
US9404188B2 (en) * 2010-11-11 2016-08-02 Rivertop Renewables Corrosion inhibiting composition
EP2699660B1 (de) 2011-04-21 2015-08-12 Rivertop Renewables, Inc. Calciumsequestrierungszusammensetzung
US8987181B2 (en) 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
US9029268B2 (en) 2012-11-21 2015-05-12 Dynaloy, Llc Process for etching metals
EP2925826A1 (de) 2012-11-28 2015-10-07 Rivertop Renewables Korrosionshemmende und gefrierpunktsenkende zusammensetzungen
US9346736B2 (en) 2013-03-13 2016-05-24 Rivertop Renewables, Inc. Oxidation process
EP2970079A4 (de) 2013-03-13 2016-11-30 Rivertop Renewables Inc Verbessertes salpetersäureoxidationsverfahren
US9670124B2 (en) 2013-03-13 2017-06-06 Rivertop Renewables, Inc. Nitric acid oxidation process
KR102028484B1 (ko) * 2014-02-14 2019-10-04 동우 화인켐 주식회사 반응성 메소젠 유기배향막 제거용 조성물
US9593297B2 (en) 2014-10-15 2017-03-14 Micron Technology, Inc. Compositions for removing residues and related methods
JP6501492B2 (ja) 2014-10-31 2019-04-17 関東化學株式会社 フォトレジスト残渣および／またはポリマー残渣を除去するための組成物
TWI818893B (zh) * 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 清潔組成物及其使用方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727222B2 (ja) * 1987-10-28 1995-03-29 日本合成ゴム株式会社 ホトレジスト用剥離液
DE9304878U1 (de) * 1993-03-31 1993-06-09 Morton International, Inc., Chicago, Ill. Entschichterlösung für lichtvernetzte Photoresistschablonen
JP3255551B2 (ja) * 1995-01-31 2002-02-12 東京応化工業株式会社 レジスト用剥離液組成物
JP3236220B2 (ja) * 1995-11-13 2001-12-10 東京応化工業株式会社 レジスト用剥離液組成物
JP3755776B2 (ja) * 1996-07-11 2006-03-15 東京応化工業株式会社 リソグラフィー用リンス液組成物及びそれを用いた基板の処理方法
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
JPH1167632A (ja) * 1997-08-18 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
US6562726B1 (en) * 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue

Also Published As

Publication number Publication date
EP1091254A2 (de) 2001-04-11
KR20010030460A (ko) 2001-04-16
JP2001100436A (ja) 2001-04-13
CN1296064A (zh) 2001-05-23
US6372410B1 (en) 2002-04-16
SG97932A1 (en) 2003-08-20
EP1091254B1 (de) 2009-01-21
EP1091254A3 (de) 2001-05-09
TW557420B (en) 2003-10-11
KR100859900B1 (ko) 2008-09-23
CN1184299C (zh) 2005-01-12

Similar Documents

Publication Publication Date Title
DE60041430D1 (de) Zusammensetzung zur Entfernung von Photoresist
DE60128501D1 (de) Zusammensetzung zur Entschichtung von Photoresist
DE60013221D1 (de) Fotopolymerisierbare Zusammensetzung
DE60103686D1 (de) Verfahren zur Wiederherstellung von Schaufelblättern
DE60043034D1 (de) Verfahren und Zusammensetzung zur Entfernung von Photoresistschichten
DE69831027D1 (de) Vorrichtungen zur Entnahme von weichem Gewebe
DE60024562D1 (de) Gerät zur Entnahme von weichem Gewebe
IS6120A (is) Lyfjablanda
DE69940014D1 (de) Vorrichtung zur verhinderung von autodiebstahl
DE60011540D1 (de) Verfahren zur Desinfektion von Kontaktlinsen
DE69812475T2 (de) Photoresistzusammensetzung
DE60033236D1 (de) System zur vermeidung von heckcrashs bei flugzeugen
DE60022345T2 (de) Mechanismus zur reduzierung von softwaredatenvorausladenkosten
DE69908845D1 (de) Fotoresistzusammensetzung
DE60014928D1 (de) Retinoide zur behandlung von emphysem
NO20013331D0 (no) Snöfjerningsmaskin
DE69906724D1 (de) Antimonsilikatsorptionsmittel zur abtrennung von metallionen
DE69943245D1 (de) Gaserzeugende zusammensetzung
NO20003352L (no) Snöfjerningsmaskin
DE69809633D1 (de) Photoresistzusammensetzung
NO20010177D0 (no) Snöfjerningsmaskin
DE60207811D1 (de) Zusammensetzungen zur entfernung von menschlichem cerumen
DE69817687D1 (de) Positiv-Fotoresist-Zusammensetzung
DE59915132D1 (de) Lithographieverfahren
DE69931762D1 (de) Wässrige zusammensetzung zur entfernung von beschichtungen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition