CN118266139A - 半导体激光器以及半导体激光器制造方法 - Google Patents

半导体激光器以及半导体激光器制造方法 Download PDF

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Publication number
CN118266139A
CN118266139A CN202180104326.7A CN202180104326A CN118266139A CN 118266139 A CN118266139 A CN 118266139A CN 202180104326 A CN202180104326 A CN 202180104326A CN 118266139 A CN118266139 A CN 118266139A
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CN
China
Prior art keywords
layer
type
ridge
type semiconductor
ridge structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180104326.7A
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English (en)
Chinese (zh)
Inventor
中村直干
河原弘幸
松本启资
铃木凉子
平聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN118266139A publication Critical patent/CN118266139A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN202180104326.7A 2021-11-30 2021-11-30 半导体激光器以及半导体激光器制造方法 Pending CN118266139A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/043737 WO2023100214A1 (ja) 2021-11-30 2021-11-30 半導体レーザ及び半導体レーザ製造方法

Publications (1)

Publication Number Publication Date
CN118266139A true CN118266139A (zh) 2024-06-28

Family

ID=86611642

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180104326.7A Pending CN118266139A (zh) 2021-11-30 2021-11-30 半导体激光器以及半导体激光器制造方法

Country Status (5)

Country Link
US (1) US20240413613A1 (https=)
JP (1) JP7612050B2 (https=)
CN (1) CN118266139A (https=)
TW (1) TWI819895B (https=)
WO (1) WO2023100214A1 (https=)

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622584A (ja) * 1985-06-27 1987-01-08 Nec Corp 埋込み構造半導体レ−ザ及び製造方法
JPH01309393A (ja) * 1988-06-08 1989-12-13 Hitachi Ltd 半導体レーザ装置及びその製造方法
JPH03133189A (ja) * 1989-10-18 1991-06-06 Nec Corp 高抵抗半導体層埋め込み型半導体レーザ
JPH07111361A (ja) * 1993-10-12 1995-04-25 Hitachi Ltd 埋込型半導体レーザ素子及びその製造方法
JP2000174390A (ja) * 1998-12-08 2000-06-23 Fujitsu Ltd 半導体レーザ及びその製造方法
JP3428501B2 (ja) * 1999-06-03 2003-07-22 日本電気株式会社 半導体光増幅器およびその製造方法
CA2328641A1 (en) * 2000-12-15 2002-06-15 Nortel Networks Limited Confinement layer of buried heterostructure semiconductor laser
JP3825652B2 (ja) * 2001-04-18 2006-09-27 日本電信電話株式会社 半導体光素子
DE60212755T2 (de) * 2001-04-18 2006-11-16 Nippon Telegraph And Telephone Corp. Optische Halbleitervorrichtung und Herstellungsverfahren
US20040125000A1 (en) * 2002-12-31 2004-07-01 Lee Yu Long Low noise keyboard pushbutton structure
US20090267195A1 (en) * 2005-12-20 2009-10-29 Nec Corporation Semiconductor element and method for manufacturing semiconductor element
JP2008294076A (ja) * 2007-05-22 2008-12-04 Sumitomo Electric Ind Ltd 半導体レーザ素子
JP2009266891A (ja) * 2008-04-22 2009-11-12 Sumitomo Electric Ind Ltd 半導体レーザおよびその製造方法
JP2009283822A (ja) * 2008-05-26 2009-12-03 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JP5660940B2 (ja) * 2010-04-27 2015-01-28 住友電工デバイス・イノベーション株式会社 光半導体装置の製造方法
JP2014045083A (ja) * 2012-08-27 2014-03-13 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及び半導体光素子の作製方法
JP2016031970A (ja) * 2014-07-28 2016-03-07 三菱電機株式会社 光半導体装置
JP2016184611A (ja) * 2015-03-25 2016-10-20 Ｎｔｔエレクトロニクス株式会社 半導体レーザ
JP6897928B2 (ja) * 2016-01-14 2021-07-07 住友電工デバイス・イノベーション株式会社 光半導体素子の製造方法および光半導体素子
JP2018101752A (ja) * 2016-12-21 2018-06-28 住友電気工業株式会社 半導体光素子およびその製造方法
WO2020240644A1 (ja) * 2019-05-27 2020-12-03 三菱電機株式会社 光半導体装置および光半導体装置の製造方法
US11462886B2 (en) * 2019-08-09 2022-10-04 Lumentum Japan, Inc. Buried-type semiconductor optical device
JP7457485B2 (ja) * 2019-08-09 2024-03-28 日本ルメンタム株式会社 埋め込み型半導体光素子
CN111048993B (zh) * 2019-12-27 2025-12-09 苏州矩阵光电有限公司 一种微碟激光器及其制备方法

Also Published As

Publication number Publication date
TWI819895B (zh) 2023-10-21
JPWO2023100214A1 (https=) 2023-06-08
JP7612050B2 (ja) 2025-01-10
WO2023100214A1 (ja) 2023-06-08
TW202324864A (zh) 2023-06-16
US20240413613A1 (en) 2024-12-12

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