JP7612050B2 - 半導体レーザ及び半導体レーザ製造方法 - Google Patents

半導体レーザ及び半導体レーザ製造方法 Download PDF

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JP7612050B2
JP7612050B2 JP2023564276A JP2023564276A JP7612050B2 JP 7612050 B2 JP7612050 B2 JP 7612050B2 JP 2023564276 A JP2023564276 A JP 2023564276A JP 2023564276 A JP2023564276 A JP 2023564276A JP 7612050 B2 JP7612050 B2 JP 7612050B2
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layer
ridge
type
type semiconductor
ridge structure
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JPWO2023100214A5 (https=
JPWO2023100214A1 (https=
Inventor
直幹 中村
弘幸 河原
啓資 松本
涼子 鈴木
聡 平
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2023564276A 2021-11-30 2021-11-30 半導体レーザ及び半導体レーザ製造方法 Active JP7612050B2 (ja)

Applications Claiming Priority (1)

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PCT/JP2021/043737 WO2023100214A1 (ja) 2021-11-30 2021-11-30 半導体レーザ及び半導体レーザ製造方法

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JPWO2023100214A1 JPWO2023100214A1 (https=) 2023-06-08
JPWO2023100214A5 JPWO2023100214A5 (https=) 2024-01-04
JP7612050B2 true JP7612050B2 (ja) 2025-01-10

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US (1) US20240413613A1 (https=)
JP (1) JP7612050B2 (https=)
CN (1) CN118266139A (https=)
TW (1) TWI819895B (https=)
WO (1) WO2023100214A1 (https=)

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174390A (ja) 1998-12-08 2000-06-23 Fujitsu Ltd 半導体レーザ及びその製造方法
JP2000349399A (ja) 1999-06-03 2000-12-15 Nec Corp 半導体光増幅器およびその製造方法
JP2002314196A (ja) 2001-04-18 2002-10-25 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体及び半導体光素子
US20040013143A1 (en) 2000-12-15 2004-01-22 Springthorpe Anthony J. Confinement layer of buried heterostructure semiconductor laser
WO2007072807A1 (ja) 2005-12-20 2007-06-28 Nec Corporation 半導体素子、および半導体素子の製造方法
JP2009266891A (ja) 2008-04-22 2009-11-12 Sumitomo Electric Ind Ltd 半導体レーザおよびその製造方法
JP2009283822A (ja) 2008-05-26 2009-12-03 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JP2011249767A (ja) 2010-04-27 2011-12-08 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
JP2014045083A (ja) 2012-08-27 2014-03-13 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及び半導体光素子の作製方法
CN105305230A (zh) 2014-07-28 2016-02-03 三菱电机株式会社 光半导体装置
JP2016184611A (ja) 2015-03-25 2016-10-20 Ｎｔｔエレクトロニクス株式会社 半導体レーザ
JP2017130657A (ja) 2016-01-14 2017-07-27 住友電工デバイス・イノベーション株式会社 光半導体素子の製造方法および光半導体素子
JP2018101752A (ja) 2016-12-21 2018-06-28 住友電気工業株式会社 半導体光素子およびその製造方法
CN111048993A (zh) 2019-12-27 2020-04-21 苏州辰睿光电有限公司 一种微碟激光器及其制备方法
WO2020240644A1 (ja) 2019-05-27 2020-12-03 三菱電機株式会社 光半導体装置および光半導体装置の製造方法
JP2021028971A (ja) 2019-08-09 2021-02-25 日本ルメンタム株式会社 埋め込み型半導体光素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622584A (ja) * 1985-06-27 1987-01-08 Nec Corp 埋込み構造半導体レ−ザ及び製造方法
JPH01309393A (ja) * 1988-06-08 1989-12-13 Hitachi Ltd 半導体レーザ装置及びその製造方法
JPH03133189A (ja) * 1989-10-18 1991-06-06 Nec Corp 高抵抗半導体層埋め込み型半導体レーザ
JPH07111361A (ja) * 1993-10-12 1995-04-25 Hitachi Ltd 埋込型半導体レーザ素子及びその製造方法
DE60212755T2 (de) * 2001-04-18 2006-11-16 Nippon Telegraph And Telephone Corp. Optische Halbleitervorrichtung und Herstellungsverfahren
US20040125000A1 (en) * 2002-12-31 2004-07-01 Lee Yu Long Low noise keyboard pushbutton structure
JP2008294076A (ja) * 2007-05-22 2008-12-04 Sumitomo Electric Ind Ltd 半導体レーザ素子
US11462886B2 (en) * 2019-08-09 2022-10-04 Lumentum Japan, Inc. Buried-type semiconductor optical device

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174390A (ja) 1998-12-08 2000-06-23 Fujitsu Ltd 半導体レーザ及びその製造方法
JP2000349399A (ja) 1999-06-03 2000-12-15 Nec Corp 半導体光増幅器およびその製造方法
US20040013143A1 (en) 2000-12-15 2004-01-22 Springthorpe Anthony J. Confinement layer of buried heterostructure semiconductor laser
JP2002314196A (ja) 2001-04-18 2002-10-25 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体及び半導体光素子
WO2007072807A1 (ja) 2005-12-20 2007-06-28 Nec Corporation 半導体素子、および半導体素子の製造方法
JP2009266891A (ja) 2008-04-22 2009-11-12 Sumitomo Electric Ind Ltd 半導体レーザおよびその製造方法
JP2009283822A (ja) 2008-05-26 2009-12-03 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JP2011249767A (ja) 2010-04-27 2011-12-08 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
JP2014045083A (ja) 2012-08-27 2014-03-13 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及び半導体光素子の作製方法
CN105305230A (zh) 2014-07-28 2016-02-03 三菱电机株式会社 光半导体装置
JP2016031970A (ja) 2014-07-28 2016-03-07 三菱電機株式会社 光半導体装置
JP2016184611A (ja) 2015-03-25 2016-10-20 Ｎｔｔエレクトロニクス株式会社 半導体レーザ
JP2017130657A (ja) 2016-01-14 2017-07-27 住友電工デバイス・イノベーション株式会社 光半導体素子の製造方法および光半導体素子
JP2018101752A (ja) 2016-12-21 2018-06-28 住友電気工業株式会社 半導体光素子およびその製造方法
WO2020240644A1 (ja) 2019-05-27 2020-12-03 三菱電機株式会社 光半導体装置および光半導体装置の製造方法
JP2021028971A (ja) 2019-08-09 2021-02-25 日本ルメンタム株式会社 埋め込み型半導体光素子
CN111048993A (zh) 2019-12-27 2020-04-21 苏州辰睿光电有限公司 一种微碟激光器及其制备方法

Also Published As

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TWI819895B (zh) 2023-10-21
JPWO2023100214A1 (https=) 2023-06-08
WO2023100214A1 (ja) 2023-06-08
CN118266139A (zh) 2024-06-28
TW202324864A (zh) 2023-06-16
US20240413613A1 (en) 2024-12-12

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