TWI819895B - 半導體雷射及半導體雷射製造方法 - Google Patents

半導體雷射及半導體雷射製造方法 Download PDF

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Publication number
TWI819895B
TWI819895B TW111143537A TW111143537A TWI819895B TW I819895 B TWI819895 B TW I819895B TW 111143537 A TW111143537 A TW 111143537A TW 111143537 A TW111143537 A TW 111143537A TW I819895 B TWI819895 B TW I819895B
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Taiwan
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layer
type
aforementioned
ridge
type cladding
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TW111143537A
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Chinese (zh)
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TW202324864A (zh
Inventor
幹
河原弘幸
松本啓資
鈴木涼子
平聡
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日商三菱電機股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
TW111143537A 2021-11-30 2022-11-15 半導體雷射及半導體雷射製造方法 TWI819895B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2021/043737 2021-11-30
PCT/JP2021/043737 WO2023100214A1 (ja) 2021-11-30 2021-11-30 半導体レーザ及び半導体レーザ製造方法

Publications (2)

Publication Number Publication Date
TW202324864A TW202324864A (zh) 2023-06-16
TWI819895B true TWI819895B (zh) 2023-10-21

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US (1) US20240413613A1 (https=)
JP (1) JP7612050B2 (https=)
CN (1) CN118266139A (https=)
TW (1) TWI819895B (https=)
WO (1) WO2023100214A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060030065A1 (en) * 2001-04-18 2006-02-09 Susumu Kondo Semiconductor optical device and the fabrication method
US20090001408A1 (en) * 2007-05-22 2009-01-01 Atsushi Matsumura Method for forming a semiconductor light-emitting device and a semiconductor light-emitting device
CN101593930A (zh) * 2008-05-26 2009-12-02 三菱电机株式会社 半导体激光器及其制造方法
CN106972345A (zh) * 2016-01-14 2017-07-21 住友电工光电子器件创新株式会社 形成半导体光学器件的方法及半导体光学器件
US20210044083A1 (en) * 2019-08-09 2021-02-11 Lumentum Japan, Inc. Buried-type semiconductor optical device

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JPS622584A (ja) * 1985-06-27 1987-01-08 Nec Corp 埋込み構造半導体レ−ザ及び製造方法
JPH01309393A (ja) * 1988-06-08 1989-12-13 Hitachi Ltd 半導体レーザ装置及びその製造方法
JPH03133189A (ja) * 1989-10-18 1991-06-06 Nec Corp 高抵抗半導体層埋め込み型半導体レーザ
JPH07111361A (ja) * 1993-10-12 1995-04-25 Hitachi Ltd 埋込型半導体レーザ素子及びその製造方法
JP2000174390A (ja) * 1998-12-08 2000-06-23 Fujitsu Ltd 半導体レーザ及びその製造方法
JP3428501B2 (ja) * 1999-06-03 2003-07-22 日本電気株式会社 半導体光増幅器およびその製造方法
CA2328641A1 (en) * 2000-12-15 2002-06-15 Nortel Networks Limited Confinement layer of buried heterostructure semiconductor laser
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US20040125000A1 (en) * 2002-12-31 2004-07-01 Lee Yu Long Low noise keyboard pushbutton structure
US20090267195A1 (en) * 2005-12-20 2009-10-29 Nec Corporation Semiconductor element and method for manufacturing semiconductor element
JP2009266891A (ja) * 2008-04-22 2009-11-12 Sumitomo Electric Ind Ltd 半導体レーザおよびその製造方法
JP5660940B2 (ja) * 2010-04-27 2015-01-28 住友電工デバイス・イノベーション株式会社 光半導体装置の製造方法
JP2014045083A (ja) * 2012-08-27 2014-03-13 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及び半導体光素子の作製方法
JP2016031970A (ja) * 2014-07-28 2016-03-07 三菱電機株式会社 光半導体装置
JP2016184611A (ja) * 2015-03-25 2016-10-20 Ｎｔｔエレクトロニクス株式会社 半導体レーザ
JP2018101752A (ja) * 2016-12-21 2018-06-28 住友電気工業株式会社 半導体光素子およびその製造方法
WO2020240644A1 (ja) * 2019-05-27 2020-12-03 三菱電機株式会社 光半導体装置および光半導体装置の製造方法
JP7457485B2 (ja) * 2019-08-09 2024-03-28 日本ルメンタム株式会社 埋め込み型半導体光素子
CN111048993B (zh) * 2019-12-27 2025-12-09 苏州矩阵光电有限公司 一种微碟激光器及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060030065A1 (en) * 2001-04-18 2006-02-09 Susumu Kondo Semiconductor optical device and the fabrication method
US20090001408A1 (en) * 2007-05-22 2009-01-01 Atsushi Matsumura Method for forming a semiconductor light-emitting device and a semiconductor light-emitting device
CN101593930A (zh) * 2008-05-26 2009-12-02 三菱电机株式会社 半导体激光器及其制造方法
CN106972345A (zh) * 2016-01-14 2017-07-21 住友电工光电子器件创新株式会社 形成半导体光学器件的方法及半导体光学器件
US20210044083A1 (en) * 2019-08-09 2021-02-11 Lumentum Japan, Inc. Buried-type semiconductor optical device

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Publication number Publication date
JPWO2023100214A1 (https=) 2023-06-08
JP7612050B2 (ja) 2025-01-10
WO2023100214A1 (ja) 2023-06-08
CN118266139A (zh) 2024-06-28
TW202324864A (zh) 2023-06-16
US20240413613A1 (en) 2024-12-12

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