JPWO2023100214A1 - - Google Patents
Info
- Publication number
- JPWO2023100214A1 JPWO2023100214A1 JP2023564276A JP2023564276A JPWO2023100214A1 JP WO2023100214 A1 JPWO2023100214 A1 JP WO2023100214A1 JP 2023564276 A JP2023564276 A JP 2023564276A JP 2023564276 A JP2023564276 A JP 2023564276A JP WO2023100214 A1 JPWO2023100214 A1 JP WO2023100214A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/043737 WO2023100214A1 (ja) | 2021-11-30 | 2021-11-30 | 半導体レーザ及び半導体レーザ製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023100214A1 true JPWO2023100214A1 (https=) | 2023-06-08 |
| JPWO2023100214A5 JPWO2023100214A5 (https=) | 2024-01-04 |
| JP7612050B2 JP7612050B2 (ja) | 2025-01-10 |
Family
ID=86611642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023564276A Active JP7612050B2 (ja) | 2021-11-30 | 2021-11-30 | 半導体レーザ及び半導体レーザ製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240413613A1 (https=) |
| JP (1) | JP7612050B2 (https=) |
| CN (1) | CN118266139A (https=) |
| TW (1) | TWI819895B (https=) |
| WO (1) | WO2023100214A1 (https=) |
Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622584A (ja) * | 1985-06-27 | 1987-01-08 | Nec Corp | 埋込み構造半導体レ−ザ及び製造方法 |
| JPH01309393A (ja) * | 1988-06-08 | 1989-12-13 | Hitachi Ltd | 半導体レーザ装置及びその製造方法 |
| JPH03133189A (ja) * | 1989-10-18 | 1991-06-06 | Nec Corp | 高抵抗半導体層埋め込み型半導体レーザ |
| JPH07111361A (ja) * | 1993-10-12 | 1995-04-25 | Hitachi Ltd | 埋込型半導体レーザ素子及びその製造方法 |
| JP2000174390A (ja) * | 1998-12-08 | 2000-06-23 | Fujitsu Ltd | 半導体レーザ及びその製造方法 |
| JP2000349399A (ja) * | 1999-06-03 | 2000-12-15 | Nec Corp | 半導体光増幅器およびその製造方法 |
| JP2002314196A (ja) * | 2001-04-18 | 2002-10-25 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体及び半導体光素子 |
| US20040013143A1 (en) * | 2000-12-15 | 2004-01-22 | Springthorpe Anthony J. | Confinement layer of buried heterostructure semiconductor laser |
| US20040125000A1 (en) * | 2002-12-31 | 2004-07-01 | Lee Yu Long | Low noise keyboard pushbutton structure |
| WO2007072807A1 (ja) * | 2005-12-20 | 2007-06-28 | Nec Corporation | 半導体素子、および半導体素子の製造方法 |
| JP2009266891A (ja) * | 2008-04-22 | 2009-11-12 | Sumitomo Electric Ind Ltd | 半導体レーザおよびその製造方法 |
| JP2009283822A (ja) * | 2008-05-26 | 2009-12-03 | Mitsubishi Electric Corp | 半導体レーザ及びその製造方法 |
| JP2011249767A (ja) * | 2010-04-27 | 2011-12-08 | Sumitomo Electric Device Innovations Inc | 光半導体装置の製造方法 |
| JP2014045083A (ja) * | 2012-08-27 | 2014-03-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光素子及び半導体光素子の作製方法 |
| CN105305230A (zh) * | 2014-07-28 | 2016-02-03 | 三菱电机株式会社 | 光半导体装置 |
| JP2016184611A (ja) * | 2015-03-25 | 2016-10-20 | Ｎｔｔエレクトロニクス株式会社 | 半導体レーザ |
| JP2017130657A (ja) * | 2016-01-14 | 2017-07-27 | 住友電工デバイス・イノベーション株式会社 | 光半導体素子の製造方法および光半導体素子 |
| JP2018101752A (ja) * | 2016-12-21 | 2018-06-28 | 住友電気工業株式会社 | 半導体光素子およびその製造方法 |
| CN111048993A (zh) * | 2019-12-27 | 2020-04-21 | 苏州辰睿光电有限公司 | 一种微碟激光器及其制备方法 |
| WO2020240644A1 (ja) * | 2019-05-27 | 2020-12-03 | 三菱電機株式会社 | 光半導体装置および光半導体装置の製造方法 |
| JP2021028971A (ja) * | 2019-08-09 | 2021-02-25 | 日本ルメンタム株式会社 | 埋め込み型半導体光素子 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60212755T2 (de) * | 2001-04-18 | 2006-11-16 | Nippon Telegraph And Telephone Corp. | Optische Halbleitervorrichtung und Herstellungsverfahren |
| JP2008294076A (ja) * | 2007-05-22 | 2008-12-04 | Sumitomo Electric Ind Ltd | 半導体レーザ素子 |
| US11462886B2 (en) * | 2019-08-09 | 2022-10-04 | Lumentum Japan, Inc. | Buried-type semiconductor optical device |
-
2021
- 2021-11-30 US US18/697,834 patent/US20240413613A1/en active Pending
- 2021-11-30 WO PCT/JP2021/043737 patent/WO2023100214A1/ja not_active Ceased
- 2021-11-30 JP JP2023564276A patent/JP7612050B2/ja active Active
- 2021-11-30 CN CN202180104326.7A patent/CN118266139A/zh active Pending
-
2022
- 2022-11-15 TW TW111143537A patent/TWI819895B/zh active
Patent Citations (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622584A (ja) * | 1985-06-27 | 1987-01-08 | Nec Corp | 埋込み構造半導体レ−ザ及び製造方法 |
| JPH01309393A (ja) * | 1988-06-08 | 1989-12-13 | Hitachi Ltd | 半導体レーザ装置及びその製造方法 |
| JPH03133189A (ja) * | 1989-10-18 | 1991-06-06 | Nec Corp | 高抵抗半導体層埋め込み型半導体レーザ |
| JPH07111361A (ja) * | 1993-10-12 | 1995-04-25 | Hitachi Ltd | 埋込型半導体レーザ素子及びその製造方法 |
| JP2000174390A (ja) * | 1998-12-08 | 2000-06-23 | Fujitsu Ltd | 半導体レーザ及びその製造方法 |
| JP2000349399A (ja) * | 1999-06-03 | 2000-12-15 | Nec Corp | 半導体光増幅器およびその製造方法 |
| US20040013143A1 (en) * | 2000-12-15 | 2004-01-22 | Springthorpe Anthony J. | Confinement layer of buried heterostructure semiconductor laser |
| JP2002314196A (ja) * | 2001-04-18 | 2002-10-25 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体及び半導体光素子 |
| US20040125000A1 (en) * | 2002-12-31 | 2004-07-01 | Lee Yu Long | Low noise keyboard pushbutton structure |
| WO2007072807A1 (ja) * | 2005-12-20 | 2007-06-28 | Nec Corporation | 半導体素子、および半導体素子の製造方法 |
| JP2009266891A (ja) * | 2008-04-22 | 2009-11-12 | Sumitomo Electric Ind Ltd | 半導体レーザおよびその製造方法 |
| JP2009283822A (ja) * | 2008-05-26 | 2009-12-03 | Mitsubishi Electric Corp | 半導体レーザ及びその製造方法 |
| JP2011249767A (ja) * | 2010-04-27 | 2011-12-08 | Sumitomo Electric Device Innovations Inc | 光半導体装置の製造方法 |
| JP2014045083A (ja) * | 2012-08-27 | 2014-03-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光素子及び半導体光素子の作製方法 |
| CN105305230A (zh) * | 2014-07-28 | 2016-02-03 | 三菱电机株式会社 | 光半导体装置 |
| JP2016031970A (ja) * | 2014-07-28 | 2016-03-07 | 三菱電機株式会社 | 光半導体装置 |
| JP2016184611A (ja) * | 2015-03-25 | 2016-10-20 | Ｎｔｔエレクトロニクス株式会社 | 半導体レーザ |
| JP2017130657A (ja) * | 2016-01-14 | 2017-07-27 | 住友電工デバイス・イノベーション株式会社 | 光半導体素子の製造方法および光半導体素子 |
| JP2018101752A (ja) * | 2016-12-21 | 2018-06-28 | 住友電気工業株式会社 | 半導体光素子およびその製造方法 |
| WO2020240644A1 (ja) * | 2019-05-27 | 2020-12-03 | 三菱電機株式会社 | 光半導体装置および光半導体装置の製造方法 |
| JP2021028971A (ja) * | 2019-08-09 | 2021-02-25 | 日本ルメンタム株式会社 | 埋め込み型半導体光素子 |
| CN111048993A (zh) * | 2019-12-27 | 2020-04-21 | 苏州辰睿光电有限公司 | 一种微碟激光器及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI819895B (zh) | 2023-10-21 |
| JP7612050B2 (ja) | 2025-01-10 |
| WO2023100214A1 (ja) | 2023-06-08 |
| CN118266139A (zh) | 2024-06-28 |
| TW202324864A (zh) | 2023-06-16 |
| US20240413613A1 (en) | 2024-12-12 |
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