CN1143366C - 半导体集成电路装置的制造方法 - Google Patents

半导体集成电路装置的制造方法 Download PDF

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Publication number
CN1143366C
CN1143366C CNB951071661A CN95107166A CN1143366C CN 1143366 C CN1143366 C CN 1143366C CN B951071661 A CNB951071661 A CN B951071661A CN 95107166 A CN95107166 A CN 95107166A CN 1143366 C CN1143366 C CN 1143366C
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China
Prior art keywords
gas
integrated circuit
circuit device
manufacturing
etching
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Expired - Lifetime
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CNB951071661A
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English (en)
Chinese (zh)
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CN1128899A (zh
Inventor
德永尚文
֮
奥平定之
�ݶ�ũ�����޹�˾
水谷巽
田子一农
数见秀之
吉冈健
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Renesas Electronics Corp
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Hitachi Ltd
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Publication of CN1128899A publication Critical patent/CN1128899A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB951071661A 1994-06-13 1995-06-12 半导体集成电路装置的制造方法 Expired - Lifetime CN1143366C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP130232/94 1994-06-13
JP6130232A JPH07335612A (ja) 1994-06-13 1994-06-13 半導体集積回路装置の製造方法
JP130232/1994 1994-06-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN01143387A Division CN1412824A (zh) 1994-06-13 2001-12-21 半导体集成电路装置的制造方法

Publications (2)

Publication Number Publication Date
CN1128899A CN1128899A (zh) 1996-08-14
CN1143366C true CN1143366C (zh) 2004-03-24

Family

ID=15029273

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB951071661A Expired - Lifetime CN1143366C (zh) 1994-06-13 1995-06-12 半导体集成电路装置的制造方法
CN01143387A Pending CN1412824A (zh) 1994-06-13 2001-12-21 半导体集成电路装置的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN01143387A Pending CN1412824A (zh) 1994-06-13 2001-12-21 半导体集成电路装置的制造方法

Country Status (5)

Country Link
US (4) US5874013A (https=)
JP (1) JPH07335612A (https=)
KR (1) KR100384202B1 (https=)
CN (2) CN1143366C (https=)
TW (1) TW308717B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1959529B (zh) * 2005-11-02 2012-06-13 周星工程股份有限公司 形成蚀刻掩模的方法

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3623256B2 (ja) * 1993-06-30 2005-02-23 株式会社東芝 表面処理方法および表面処理装置
USRE39895E1 (en) * 1994-06-13 2007-10-23 Renesas Technology Corp. Semiconductor integrated circuit arrangement fabrication method
JPH1092792A (ja) * 1996-09-18 1998-04-10 Toshiba Corp 半導体装置の製造方法
JPH10177992A (ja) * 1996-12-16 1998-06-30 Sharp Corp 微細コンタクトホールのテーパエッチング方法
US6376386B1 (en) 1997-02-25 2002-04-23 Fujitsu Limited Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas
US6849557B1 (en) 1997-04-30 2005-02-01 Micron Technology, Inc. Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide
KR19990035454A (ko) * 1997-10-31 1999-05-15 윤종용 단일 챔버내에서 평면 광 도파로를 제작하는 방법
JP3910734B2 (ja) * 1997-12-03 2007-04-25 ジェームス・ダブリュー・ミッツェル 表面処理方法
KR100311487B1 (ko) * 1997-12-16 2001-11-15 김영환 산화막식각방법
US6242354B1 (en) * 1998-02-12 2001-06-05 National Semiconductor Corporation Semiconductor device with self aligned contacts having integrated silicide stringer removal and method thereof
US6403488B1 (en) * 1998-03-19 2002-06-11 Cypress Semiconductor Corp. Selective SAC etch process
US6074952A (en) * 1998-05-07 2000-06-13 Vanguard International Semiconductor Corporation Method for forming multi-level contacts
JP3956499B2 (ja) * 1998-09-07 2007-08-08 ソニー株式会社 半導体装置の製造方法
JP3764594B2 (ja) * 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
US6372634B1 (en) 1999-06-15 2002-04-16 Cypress Semiconductor Corp. Plasma etch chemistry and method of improving etch control
JP2001021919A (ja) * 1999-07-07 2001-01-26 Matsushita Electric Ind Co Ltd 液晶表示装置
JP3915365B2 (ja) * 2000-03-10 2007-05-16 コニカミノルタホールディングス株式会社 熱現像用ハロゲン化銀写真感光材料及びその製造方法
US6337285B1 (en) * 2000-03-21 2002-01-08 Micron Technology, Inc. Self-aligned contact (SAC) etch with dual-chemistry process
US6610614B2 (en) * 2001-06-20 2003-08-26 Texas Instruments Incorporated Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
JP2003068879A (ja) * 2001-08-27 2003-03-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6989108B2 (en) * 2001-08-30 2006-01-24 Micron Technology, Inc. Etchant gas composition
KR100474539B1 (ko) * 2002-07-15 2005-03-10 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP4729884B2 (ja) * 2003-09-08 2011-07-20 東京エレクトロン株式会社 プラズマエッチング方法
EP1687842A1 (en) * 2003-11-11 2006-08-09 Showa Denko K.K. Radical generating method, etching method and apparatus for use in these methods
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8679982B2 (en) * 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
KR101926418B1 (ko) * 2012-05-16 2018-12-10 삼성전자주식회사 반도체 소자의 제조 방법
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
JP6929148B2 (ja) * 2017-06-30 2021-09-01 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US11688650B2 (en) * 2019-07-05 2023-06-27 Tokyo Electron Limited Etching method and substrate processing apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920004171B1 (ko) * 1984-07-11 1992-05-30 가부시기가이샤 히다찌세이사꾸쇼 드라이에칭장치
US4966870A (en) * 1988-04-14 1990-10-30 International Business Machines Corporation Method for making borderless contacts
JP2949731B2 (ja) * 1989-09-25 1999-09-20 ソニー株式会社 半導体装置の製造方法
US5275972A (en) * 1990-02-19 1994-01-04 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor integrated circuit device including the self-aligned formation of a contact window
US5290383A (en) * 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
JPH04342164A (ja) * 1991-05-20 1992-11-27 Hitachi Ltd 半導体集積回路装置の形成方法
JPH04370934A (ja) * 1991-06-20 1992-12-24 Fujitsu Ltd 半導体装置の製造方法
US5269879A (en) * 1991-10-16 1993-12-14 Lam Research Corporation Method of etching vias without sputtering of underlying electrically conductive layer
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
US5324388A (en) * 1992-06-22 1994-06-28 Matsushita Electric Industrial Co., Ltd. Dry etching method and dry etching apparatus
JPH0689880A (ja) * 1992-09-08 1994-03-29 Tokyo Electron Ltd エッチング装置
JP3109728B2 (ja) 1996-05-22 2000-11-20 東洋製罐株式会社 林檎の内部品質検査装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1959529B (zh) * 2005-11-02 2012-06-13 周星工程股份有限公司 形成蚀刻掩模的方法

Also Published As

Publication number Publication date
US6074958A (en) 2000-06-13
KR100384202B1 (ko) 2003-08-14
US5874013A (en) 1999-02-23
JPH07335612A (ja) 1995-12-22
US5962347A (en) 1999-10-05
CN1128899A (zh) 1996-08-14
TW308717B (https=) 1997-06-21
US6309980B1 (en) 2001-10-30
KR960002600A (ko) 1996-01-26
CN1412824A (zh) 2003-04-23

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