TW308717B - - Google Patents

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Publication number
TW308717B
TW308717B TW084102625A TW84102625A TW308717B TW 308717 B TW308717 B TW 308717B TW 084102625 A TW084102625 A TW 084102625A TW 84102625 A TW84102625 A TW 84102625A TW 308717 B TW308717 B TW 308717B
Authority
TW
Taiwan
Prior art keywords
insulating film
gas
film
species
etching
Prior art date
Application number
TW084102625A
Other languages
English (en)
Chinese (zh)
Inventor
Ken Yoshioka
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW308717B publication Critical patent/TW308717B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW084102625A 1994-06-13 1995-03-18 TW308717B (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6130232A JPH07335612A (ja) 1994-06-13 1994-06-13 半導体集積回路装置の製造方法

Publications (1)

Publication Number Publication Date
TW308717B true TW308717B (https=) 1997-06-21

Family

ID=15029273

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084102625A TW308717B (https=) 1994-06-13 1995-03-18

Country Status (5)

Country Link
US (4) US5874013A (https=)
JP (1) JPH07335612A (https=)
KR (1) KR100384202B1 (https=)
CN (2) CN1143366C (https=)
TW (1) TW308717B (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3623256B2 (ja) * 1993-06-30 2005-02-23 株式会社東芝 表面処理方法および表面処理装置
USRE39895E1 (en) * 1994-06-13 2007-10-23 Renesas Technology Corp. Semiconductor integrated circuit arrangement fabrication method
JPH1092792A (ja) * 1996-09-18 1998-04-10 Toshiba Corp 半導体装置の製造方法
JPH10177992A (ja) * 1996-12-16 1998-06-30 Sharp Corp 微細コンタクトホールのテーパエッチング方法
US6376386B1 (en) 1997-02-25 2002-04-23 Fujitsu Limited Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas
US6849557B1 (en) 1997-04-30 2005-02-01 Micron Technology, Inc. Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide
KR19990035454A (ko) * 1997-10-31 1999-05-15 윤종용 단일 챔버내에서 평면 광 도파로를 제작하는 방법
JP3910734B2 (ja) * 1997-12-03 2007-04-25 ジェームス・ダブリュー・ミッツェル 表面処理方法
KR100311487B1 (ko) * 1997-12-16 2001-11-15 김영환 산화막식각방법
US6242354B1 (en) * 1998-02-12 2001-06-05 National Semiconductor Corporation Semiconductor device with self aligned contacts having integrated silicide stringer removal and method thereof
US6403488B1 (en) * 1998-03-19 2002-06-11 Cypress Semiconductor Corp. Selective SAC etch process
US6074952A (en) * 1998-05-07 2000-06-13 Vanguard International Semiconductor Corporation Method for forming multi-level contacts
JP3956499B2 (ja) * 1998-09-07 2007-08-08 ソニー株式会社 半導体装置の製造方法
JP3764594B2 (ja) * 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
US6372634B1 (en) 1999-06-15 2002-04-16 Cypress Semiconductor Corp. Plasma etch chemistry and method of improving etch control
JP2001021919A (ja) * 1999-07-07 2001-01-26 Matsushita Electric Ind Co Ltd 液晶表示装置
JP3915365B2 (ja) * 2000-03-10 2007-05-16 コニカミノルタホールディングス株式会社 熱現像用ハロゲン化銀写真感光材料及びその製造方法
US6337285B1 (en) * 2000-03-21 2002-01-08 Micron Technology, Inc. Self-aligned contact (SAC) etch with dual-chemistry process
US6610614B2 (en) * 2001-06-20 2003-08-26 Texas Instruments Incorporated Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
JP2003068879A (ja) * 2001-08-27 2003-03-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6989108B2 (en) * 2001-08-30 2006-01-24 Micron Technology, Inc. Etchant gas composition
KR100474539B1 (ko) * 2002-07-15 2005-03-10 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP4729884B2 (ja) * 2003-09-08 2011-07-20 東京エレクトロン株式会社 プラズマエッチング方法
EP1687842A1 (en) * 2003-11-11 2006-08-09 Showa Denko K.K. Radical generating method, etching method and apparatus for use in these methods
KR20070047624A (ko) * 2005-11-02 2007-05-07 주성엔지니어링(주) 박막 패턴 형성 방법
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8679982B2 (en) * 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
KR101926418B1 (ko) * 2012-05-16 2018-12-10 삼성전자주식회사 반도체 소자의 제조 방법
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
JP6929148B2 (ja) * 2017-06-30 2021-09-01 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US11688650B2 (en) * 2019-07-05 2023-06-27 Tokyo Electron Limited Etching method and substrate processing apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920004171B1 (ko) * 1984-07-11 1992-05-30 가부시기가이샤 히다찌세이사꾸쇼 드라이에칭장치
US4966870A (en) * 1988-04-14 1990-10-30 International Business Machines Corporation Method for making borderless contacts
JP2949731B2 (ja) * 1989-09-25 1999-09-20 ソニー株式会社 半導体装置の製造方法
US5275972A (en) * 1990-02-19 1994-01-04 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor integrated circuit device including the self-aligned formation of a contact window
US5290383A (en) * 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
JPH04342164A (ja) * 1991-05-20 1992-11-27 Hitachi Ltd 半導体集積回路装置の形成方法
JPH04370934A (ja) * 1991-06-20 1992-12-24 Fujitsu Ltd 半導体装置の製造方法
US5269879A (en) * 1991-10-16 1993-12-14 Lam Research Corporation Method of etching vias without sputtering of underlying electrically conductive layer
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
US5324388A (en) * 1992-06-22 1994-06-28 Matsushita Electric Industrial Co., Ltd. Dry etching method and dry etching apparatus
JPH0689880A (ja) * 1992-09-08 1994-03-29 Tokyo Electron Ltd エッチング装置
JP3109728B2 (ja) 1996-05-22 2000-11-20 東洋製罐株式会社 林檎の内部品質検査装置

Also Published As

Publication number Publication date
US6074958A (en) 2000-06-13
KR100384202B1 (ko) 2003-08-14
US5874013A (en) 1999-02-23
JPH07335612A (ja) 1995-12-22
US5962347A (en) 1999-10-05
CN1143366C (zh) 2004-03-24
CN1128899A (zh) 1996-08-14
US6309980B1 (en) 2001-10-30
KR960002600A (ko) 1996-01-26
CN1412824A (zh) 2003-04-23

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