CN111640464B - 用于同时提供设置及复位电压的设备及方法 - Google Patents

用于同时提供设置及复位电压的设备及方法 Download PDF

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Publication number
CN111640464B
CN111640464B CN202010488121.0A CN202010488121A CN111640464B CN 111640464 B CN111640464 B CN 111640464B CN 202010488121 A CN202010488121 A CN 202010488121A CN 111640464 B CN111640464 B CN 111640464B
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China
Prior art keywords
voltage
node
reset
memory cells
inhibit
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CN111640464A (zh
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马尔科-多梅尼科·蒂布尔齐
朱利奥-朱塞佩·马罗塔
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Micron Technology Inc
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Micron Technology Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0085—Write a page or sector of information simultaneously, e.g. a complete row or word line
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0088—Write with the simultaneous writing of a plurality of cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
CN202010488121.0A 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法 Active CN111640464B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010488121.0A CN111640464B (zh) 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/445,577 2012-04-12
US13/445,577 US9053784B2 (en) 2012-04-12 2012-04-12 Apparatuses and methods for providing set and reset voltages at the same time
CN201380026853.6A CN104335283A (zh) 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法
CN202010488121.0A CN111640464B (zh) 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法
PCT/US2013/036209 WO2013155326A1 (en) 2012-04-12 2013-04-11 Apparatuses and methods for providing set and reset voltages at the same time

Related Parent Applications (1)

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CN201380026853.6A Division CN104335283A (zh) 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法

Publications (2)

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CN111640464A CN111640464A (zh) 2020-09-08
CN111640464B true CN111640464B (zh) 2023-09-29

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CN201380026853.6A Pending CN104335283A (zh) 2012-04-12 2013-04-11 用于同时提供设置及复位电压的设备及方法

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US (3) US9053784B2 (enExample)
EP (1) EP2837000B1 (enExample)
JP (1) JP2015518230A (enExample)
KR (1) KR101984681B1 (enExample)
CN (2) CN111640464B (enExample)
TW (1) TWI585763B (enExample)
WO (1) WO2013155326A1 (enExample)

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US9053784B2 (en) 2012-04-12 2015-06-09 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
KR102151183B1 (ko) * 2014-06-30 2020-09-02 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
CN104794261A (zh) * 2015-03-27 2015-07-22 山东华芯半导体有限公司 一种具有复位功能的阻变型随机存储器模型及存储方法
GB2545264B (en) * 2015-12-11 2020-01-15 Advanced Risc Mach Ltd A storage array
TWI626660B (zh) * 2017-04-21 2018-06-11 瞻誠科技股份有限公司 記憶體裝置及其製作方法
JP6723402B1 (ja) * 2019-02-28 2020-07-15 ウィンボンド エレクトロニクス コーポレーション 抵抗変化型ランダムアクセスメモリ

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Also Published As

Publication number Publication date
US20130272053A1 (en) 2013-10-17
KR20150002759A (ko) 2015-01-07
EP2837000A1 (en) 2015-02-18
EP2837000A4 (en) 2015-07-08
US9053784B2 (en) 2015-06-09
EP2837000B1 (en) 2020-03-25
US20170154676A1 (en) 2017-06-01
JP2015518230A (ja) 2015-06-25
TW201403604A (zh) 2014-01-16
WO2013155326A1 (en) 2013-10-17
CN104335283A (zh) 2015-02-04
US20150269999A1 (en) 2015-09-24
US9570172B2 (en) 2017-02-14
KR101984681B1 (ko) 2019-05-31
US9711218B2 (en) 2017-07-18
TWI585763B (zh) 2017-06-01
CN111640464A (zh) 2020-09-08

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