KR101984681B1 - 세트 및 리셋 전압들을 동시에 제공하기 위한 장치들 및 방법들 - Google Patents

세트 및 리셋 전압들을 동시에 제공하기 위한 장치들 및 방법들 Download PDF

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KR101984681B1
KR101984681B1 KR1020147030963A KR20147030963A KR101984681B1 KR 101984681 B1 KR101984681 B1 KR 101984681B1 KR 1020147030963 A KR1020147030963 A KR 1020147030963A KR 20147030963 A KR20147030963 A KR 20147030963A KR 101984681 B1 KR101984681 B1 KR 101984681B1
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voltage
memory device
state material
delete delete
variable state
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KR20150002759A (ko
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마르코-도메니코 티버지
지울리오-지우세페 마로타
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마이크론 테크놀로지, 인크.
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0085—Write a page or sector of information simultaneously, e.g. a complete row or word line
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0088—Write with the simultaneous writing of a plurality of cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
KR1020147030963A 2012-04-12 2013-04-11 세트 및 리셋 전압들을 동시에 제공하기 위한 장치들 및 방법들 Active KR101984681B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/445,577 2012-04-12
US13/445,577 US9053784B2 (en) 2012-04-12 2012-04-12 Apparatuses and methods for providing set and reset voltages at the same time
PCT/US2013/036209 WO2013155326A1 (en) 2012-04-12 2013-04-11 Apparatuses and methods for providing set and reset voltages at the same time

Publications (2)

Publication Number Publication Date
KR20150002759A KR20150002759A (ko) 2015-01-07
KR101984681B1 true KR101984681B1 (ko) 2019-05-31

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Country Status (7)

Country Link
US (3) US9053784B2 (enExample)
EP (1) EP2837000B1 (enExample)
JP (1) JP2015518230A (enExample)
KR (1) KR101984681B1 (enExample)
CN (2) CN111640464B (enExample)
TW (1) TWI585763B (enExample)
WO (1) WO2013155326A1 (enExample)

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US9053784B2 (en) 2012-04-12 2015-06-09 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
KR102151183B1 (ko) * 2014-06-30 2020-09-02 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
CN104794261A (zh) * 2015-03-27 2015-07-22 山东华芯半导体有限公司 一种具有复位功能的阻变型随机存储器模型及存储方法
GB2545264B (en) * 2015-12-11 2020-01-15 Advanced Risc Mach Ltd A storage array
TWI626660B (zh) * 2017-04-21 2018-06-11 瞻誠科技股份有限公司 記憶體裝置及其製作方法
JP6723402B1 (ja) * 2019-02-28 2020-07-15 ウィンボンド エレクトロニクス コーポレーション 抵抗変化型ランダムアクセスメモリ

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US20120014163A1 (en) * 2010-07-16 2012-01-19 Shinobu Yamazaki Semiconductor memory device and method of driving the same

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Also Published As

Publication number Publication date
US20130272053A1 (en) 2013-10-17
KR20150002759A (ko) 2015-01-07
CN111640464B (zh) 2023-09-29
EP2837000A1 (en) 2015-02-18
EP2837000A4 (en) 2015-07-08
US9053784B2 (en) 2015-06-09
EP2837000B1 (en) 2020-03-25
US20170154676A1 (en) 2017-06-01
JP2015518230A (ja) 2015-06-25
TW201403604A (zh) 2014-01-16
WO2013155326A1 (en) 2013-10-17
CN104335283A (zh) 2015-02-04
US20150269999A1 (en) 2015-09-24
US9570172B2 (en) 2017-02-14
US9711218B2 (en) 2017-07-18
TWI585763B (zh) 2017-06-01
CN111640464A (zh) 2020-09-08

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