JP2015518230A - セット電圧とリセット電圧とを同時に供給する装置および方法 - Google Patents

セット電圧とリセット電圧とを同時に供給する装置および方法 Download PDF

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Publication number
JP2015518230A
JP2015518230A JP2015505916A JP2015505916A JP2015518230A JP 2015518230 A JP2015518230 A JP 2015518230A JP 2015505916 A JP2015505916 A JP 2015505916A JP 2015505916 A JP2015505916 A JP 2015505916A JP 2015518230 A JP2015518230 A JP 2015518230A
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Prior art keywords
voltage
memory cells
circuit
reset
array
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JP2015518230A5 (enExample
Inventor
ティブルジ，マルコ‐ドメニコ
マロッタ，ジュリオ‐ジュゼッペ
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マイクロン テクノロジー， インク．
マイクロン テクノロジー， インク．
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Publication of JP2015518230A publication Critical patent/JP2015518230A/ja
Publication of JP2015518230A5 publication Critical patent/JP2015518230A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0085—Write a page or sector of information simultaneously, e.g. a complete row or word line
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0088—Write with the simultaneous writing of a plurality of cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
JP2015505916A 2012-04-12 2013-04-11 セット電圧とリセット電圧とを同時に供給する装置および方法 Pending JP2015518230A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/445,577 2012-04-12
US13/445,577 US9053784B2 (en) 2012-04-12 2012-04-12 Apparatuses and methods for providing set and reset voltages at the same time
PCT/US2013/036209 WO2013155326A1 (en) 2012-04-12 2013-04-11 Apparatuses and methods for providing set and reset voltages at the same time

Publications (2)

Publication Number Publication Date
JP2015518230A true JP2015518230A (ja) 2015-06-25
JP2015518230A5 JP2015518230A5 (enExample) 2016-09-15

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JP2015505916A Pending JP2015518230A (ja) 2012-04-12 2013-04-11 セット電圧とリセット電圧とを同時に供給する装置および方法

Country Status (7)

Country Link
US (3) US9053784B2 (enExample)
EP (1) EP2837000B1 (enExample)
JP (1) JP2015518230A (enExample)
KR (1) KR101984681B1 (enExample)
CN (2) CN111640464B (enExample)
TW (1) TWI585763B (enExample)
WO (1) WO2013155326A1 (enExample)

Cited By (1)

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JP2020140754A (ja) * 2019-02-28 2020-09-03 ウィンボンド エレクトロニクス コーポレーション 抵抗変化型ランダムアクセスメモリ

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US9053784B2 (en) 2012-04-12 2015-06-09 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
KR102151183B1 (ko) * 2014-06-30 2020-09-02 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
CN104794261A (zh) * 2015-03-27 2015-07-22 山东华芯半导体有限公司 一种具有复位功能的阻变型随机存储器模型及存储方法
GB2545264B (en) * 2015-12-11 2020-01-15 Advanced Risc Mach Ltd A storage array
TWI626660B (zh) * 2017-04-21 2018-06-11 瞻誠科技股份有限公司 記憶體裝置及其製作方法

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JP2012027972A (ja) * 2010-07-21 2012-02-09 Sony Corp 抵抗変化型メモリデバイスおよびその駆動方法
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JP2012146368A (ja) * 2011-01-13 2012-08-02 Sony Corp 記憶装置およびその動作方法

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JP2012038408A (ja) * 2010-07-16 2012-02-23 Sharp Corp 半導体記憶装置およびその駆動方法
JP2012027972A (ja) * 2010-07-21 2012-02-09 Sony Corp 抵抗変化型メモリデバイスおよびその駆動方法
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Publication number Priority date Publication date Assignee Title
JP2020140754A (ja) * 2019-02-28 2020-09-03 ウィンボンド エレクトロニクス コーポレーション 抵抗変化型ランダムアクセスメモリ

Also Published As

Publication number Publication date
US20130272053A1 (en) 2013-10-17
KR20150002759A (ko) 2015-01-07
CN111640464B (zh) 2023-09-29
EP2837000A1 (en) 2015-02-18
EP2837000A4 (en) 2015-07-08
US9053784B2 (en) 2015-06-09
EP2837000B1 (en) 2020-03-25
US20170154676A1 (en) 2017-06-01
TW201403604A (zh) 2014-01-16
WO2013155326A1 (en) 2013-10-17
CN104335283A (zh) 2015-02-04
US20150269999A1 (en) 2015-09-24
US9570172B2 (en) 2017-02-14
KR101984681B1 (ko) 2019-05-31
US9711218B2 (en) 2017-07-18
TWI585763B (zh) 2017-06-01
CN111640464A (zh) 2020-09-08

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