TWI585763B - 用於在相同時間提供設定及重設電壓之裝置及方法 - Google Patents

用於在相同時間提供設定及重設電壓之裝置及方法 Download PDF

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Publication number
TWI585763B
TWI585763B TW102113165A TW102113165A TWI585763B TW I585763 B TWI585763 B TW I585763B TW 102113165 A TW102113165 A TW 102113165A TW 102113165 A TW102113165 A TW 102113165A TW I585763 B TWI585763 B TW I585763B
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TW
Taiwan
Prior art keywords
voltage
suppression
memory cells
circuit
memory
Prior art date
Application number
TW102113165A
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English (en)
Chinese (zh)
Other versions
TW201403604A (zh
Inventor
馬可 多曼尼可 提伯西
吉里歐 吉塞普 瑪洛塔
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美光科技公司
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Application filed by 美光科技公司 filed Critical 美光科技公司
Publication of TW201403604A publication Critical patent/TW201403604A/zh
Application granted granted Critical
Publication of TWI585763B publication Critical patent/TWI585763B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0085—Write a page or sector of information simultaneously, e.g. a complete row or word line
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0088—Write with the simultaneous writing of a plurality of cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
TW102113165A 2012-04-12 2013-04-12 用於在相同時間提供設定及重設電壓之裝置及方法 TWI585763B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/445,577 US9053784B2 (en) 2012-04-12 2012-04-12 Apparatuses and methods for providing set and reset voltages at the same time

Publications (2)

Publication Number Publication Date
TW201403604A TW201403604A (zh) 2014-01-16
TWI585763B true TWI585763B (zh) 2017-06-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW102113165A TWI585763B (zh) 2012-04-12 2013-04-12 用於在相同時間提供設定及重設電壓之裝置及方法

Country Status (7)

Country Link
US (3) US9053784B2 (enExample)
EP (1) EP2837000B1 (enExample)
JP (1) JP2015518230A (enExample)
KR (1) KR101984681B1 (enExample)
CN (2) CN111640464B (enExample)
TW (1) TWI585763B (enExample)
WO (1) WO2013155326A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9053784B2 (en) 2012-04-12 2015-06-09 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
KR102151183B1 (ko) * 2014-06-30 2020-09-02 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
CN104794261A (zh) * 2015-03-27 2015-07-22 山东华芯半导体有限公司 一种具有复位功能的阻变型随机存储器模型及存储方法
GB2545264B (en) * 2015-12-11 2020-01-15 Advanced Risc Mach Ltd A storage array
TWI626660B (zh) * 2017-04-21 2018-06-11 瞻誠科技股份有限公司 記憶體裝置及其製作方法
JP6723402B1 (ja) * 2019-02-28 2020-07-15 ウィンボンド エレクトロニクス コーポレーション 抵抗変化型ランダムアクセスメモリ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070008785A1 (en) * 2005-07-11 2007-01-11 Scheuerlein Roy E Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements
US20090135637A1 (en) * 2007-10-05 2009-05-28 Kabushiki Kaisha Toshiba Resistance change memory device
US20090316474A1 (en) * 2008-06-23 2009-12-24 Samsung Electronics Co., Ltd. Phase change memory

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6032248A (en) * 1998-04-29 2000-02-29 Atmel Corporation Microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors
TWI355661B (en) 2003-12-18 2012-01-01 Panasonic Corp Method for using a variable-resistance material as
KR100757410B1 (ko) * 2005-09-16 2007-09-11 삼성전자주식회사 상 변화 메모리 장치 및 그것의 프로그램 방법
JP4203506B2 (ja) 2006-01-13 2009-01-07 シャープ株式会社 不揮発性半導体記憶装置及びその書き換え方法
KR100816748B1 (ko) * 2006-03-16 2008-03-27 삼성전자주식회사 프로그램 서스펜드/리줌 모드를 지원하는 상 변화 메모리장치 및 그것의 프로그램 방법
US7885102B2 (en) * 2006-09-15 2011-02-08 Renesas Electronics Corporation Semiconductor device
JP4088323B1 (ja) * 2006-12-06 2008-05-21 シャープ株式会社 不揮発性半導体記憶装置
US8154003B2 (en) 2007-08-09 2012-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Resistive non-volatile memory device
JP5214208B2 (ja) * 2007-10-01 2013-06-19 スパンション エルエルシー 半導体装置及びその制御方法
KR101202429B1 (ko) * 2007-10-11 2012-11-16 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
JP5072564B2 (ja) 2007-12-10 2012-11-14 株式会社東芝 半導体記憶装置及びメモリセル電圧印加方法
KR20100045077A (ko) 2008-10-23 2010-05-03 삼성전자주식회사 면적을 감소시킨 가변 저항 메모리 장치
JP5549105B2 (ja) 2009-04-15 2014-07-16 ソニー株式会社 抵抗変化型メモリデバイスおよびその動作方法
JP4796640B2 (ja) 2009-05-19 2011-10-19 シャープ株式会社 半導体記憶装置、及び、電子機器
JP2011004830A (ja) 2009-06-23 2011-01-13 Shimadzu Corp Ｘ線撮影装置
JP5214566B2 (ja) * 2009-09-02 2013-06-19 株式会社東芝 抵抗変化メモリ装置
JP4705204B1 (ja) 2009-10-15 2011-06-22 パナソニック株式会社 抵抗変化型不揮発性記憶装置
KR101068333B1 (ko) 2009-12-23 2011-09-28 주식회사 하이닉스반도체 Ｒｆｉｄ 장치
US8446753B2 (en) * 2010-03-25 2013-05-21 Qualcomm Incorporated Reference cell write operations at a memory
JP5054803B2 (ja) 2010-05-26 2012-10-24 シャープ株式会社 半導体記憶装置
JP5149414B2 (ja) * 2010-07-16 2013-02-20 シャープ株式会社 半導体記憶装置およびその駆動方法
JP5521850B2 (ja) * 2010-07-21 2014-06-18 ソニー株式会社 抵抗変化型メモリデバイスおよびその駆動方法
JP5598338B2 (ja) 2011-01-13 2014-10-01 ソニー株式会社 記憶装置およびその動作方法
US9087581B2 (en) * 2011-09-09 2015-07-21 Panasonic Intellectual Property Management Co., Ltd. Cross point variable resistance nonvolatile memory device and method of writing thereby
ITTO20120192A1 (it) * 2012-03-05 2013-09-06 St Microelectronics Srl Architettura e metodo di decodifica per dispositivi di memoria non volatile a cambiamento di fase
US9053784B2 (en) 2012-04-12 2015-06-09 Micron Technology, Inc. Apparatuses and methods for providing set and reset voltages at the same time
JP2013254545A (ja) * 2012-06-08 2013-12-19 Sharp Corp 不揮発性半導体記憶装置、及び、可変抵抗素子の抵抗制御方法
US8895437B2 (en) * 2012-06-15 2014-11-25 Sandisk 3D Llc Method for forming staircase word lines in a 3D non-volatile memory having vertical bit lines
KR20140028480A (ko) * 2012-08-29 2014-03-10 에스케이하이닉스 주식회사 가변 저항 메모리 장치 및 그것의 동작 방법
US9190146B2 (en) * 2013-02-28 2015-11-17 Kabushiki Kaisha Toshiba Variable resistance memory system with redundancy lines and shielded bit lines
KR102179275B1 (ko) * 2014-02-21 2020-11-16 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 리셋 방법
US9697896B2 (en) * 2014-02-26 2017-07-04 Stmicroelectronics S.R.L. High throughput programming system and method for a phase change non-volatile memory device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070008785A1 (en) * 2005-07-11 2007-01-11 Scheuerlein Roy E Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements
US20090135637A1 (en) * 2007-10-05 2009-05-28 Kabushiki Kaisha Toshiba Resistance change memory device
US20090316474A1 (en) * 2008-06-23 2009-12-24 Samsung Electronics Co., Ltd. Phase change memory

Also Published As

Publication number Publication date
US20130272053A1 (en) 2013-10-17
KR20150002759A (ko) 2015-01-07
CN111640464B (zh) 2023-09-29
EP2837000A1 (en) 2015-02-18
EP2837000A4 (en) 2015-07-08
US9053784B2 (en) 2015-06-09
EP2837000B1 (en) 2020-03-25
US20170154676A1 (en) 2017-06-01
JP2015518230A (ja) 2015-06-25
TW201403604A (zh) 2014-01-16
WO2013155326A1 (en) 2013-10-17
CN104335283A (zh) 2015-02-04
US20150269999A1 (en) 2015-09-24
US9570172B2 (en) 2017-02-14
KR101984681B1 (ko) 2019-05-31
US9711218B2 (en) 2017-07-18
CN111640464A (zh) 2020-09-08

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