CN111066142B - 功率半导体装置及功率半导体装置的制造方法 - Google Patents

功率半导体装置及功率半导体装置的制造方法 Download PDF

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CN111066142B
CN111066142B CN201780094087.5A CN201780094087A CN111066142B CN 111066142 B CN111066142 B CN 111066142B CN 201780094087 A CN201780094087 A CN 201780094087A CN 111066142 B CN111066142 B CN 111066142B
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resin
semiconductor device
power semiconductor
encapsulation
semiconductor element
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CN111066142A (zh
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佐佐木太志
吉冈佑毅
原田启行
梶勇辅
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于，对于功率半导体装置，抑制封装树脂的裂纹和半导体装置的翘曲。本发明的功率半导体装置具有：半导体元件(4、6)；端子(9)，其与所述半导体元件(4、6)的上表面接合；框体(14)，其将半导体元件(4、6)以及端子(9)收容；以及封装树脂，其在框体(14)内将半导体元件(4、6)以及端子(9)封装，封装树脂具有：第1封装树脂(21)，其至少将半导体元件(4、6)覆盖；以及第2封装树脂(22)，其形成于第1封装树脂(21)的上方，在半导体元件(4、6)的工作温度下，第1封装树脂(21)与第2封装树脂(22)相比线膨胀系数小，第1封装树脂(21)与端子(9)之间的线膨胀系数之差比第2封装树脂(22)与端子(9)之间的线膨胀系数之差小。

Description

功率半导体装置及功率半导体装置的制造方法
技术领域
本发明涉及功率半导体装置及功率半导体装置的制造方法。
背景技术
以往的功率半导体装置具有：基座板；壳体，其设置于基座板之上；以及封装树脂，其填充于壳体内。在专利文献1中记载有功率半导体装置，该功率半导体装置通过在由Al合金构成的基座板中埋入以Cu或Fe为材料的加强板，从而减小基座板的线膨胀系数，降低使基座板的背面凸出的翘曲。
但是，在专利文献1的功率半导体装置中存在如下问题，即，由于向基座板加入不同的材料而导致成本增加、以及在不同的材料之间的接触部处热阻恶化。
专利文献1：日本特开2006-100320号公报
发明内容
近年来，对于功率半导体装置，要求确保高温下的工作，但由于封装树脂与被封装树脂封装的内材之间的线膨胀系数之差，在高温时应力施加于封装树脂，有时产生裂纹。
作为使封装树脂的线膨胀系数接近内材的线膨胀系数而减小应力的方法，想到提高封装树脂的固化温度。但是，如果提高封装树脂的固化温度，则固化收缩量变大，因此存在功率半导体装置大幅翘曲的问题。如此，抑制封装树脂的裂纹与抑制功率半导体装置的翘曲处于折衷选择的关系。
本发明就是为了解决上述这样的问题而提出的，其目的在于，对于功率半导体装置，抑制封装树脂的裂纹和半导体装置的翘曲。
本发明的功率半导体装置具有：半导体元件；端子，其与半导体元件的上表面接合；框体，其将半导体元件以及端子收容；以及封装树脂，其在框体内将半导体元件以及端子封装。封装树脂具有：第1封装树脂，其至少将半导体元件覆盖；以及第2封装树脂，其形成于第1封装树脂的上方。在半导体元件的工作温度下，第1封装树脂与第2封装树脂相比线膨胀系数小，第1封装树脂与端子之间的线膨胀系数之差比第2封装树脂与端子之间的线膨胀系数之差小。
发明的效果
就本发明的功率半导体装置而言，使封装树脂由至少将半导体元件覆盖的第1封装树脂和在第1封装树脂的上方形成的第2封装树脂构成。并且，设定为，在半导体元件的工作温度下，第1封装树脂与第2封装树脂相比线膨胀系数小，第1封装树脂与端子之间的线膨胀系数之差比第2封装树脂与端子之间的线膨胀系数之差小。就容易对半导体元件产生影响的第1封装树脂而言，由与端子的线膨胀系数之差引起的应力比第2封装树脂小，因此能够抑制由该应力引起的裂纹。另外，由于第2封装树脂与第1封装树脂相比线膨胀系数大，因此能够将固化温度设定得低。因此，能够减小第2封装树脂的热固化时的收缩量，抑制功率半导体装置的翘曲。
附图说明
图1是表示实施方式1的功率半导体装置的结构的剖面图。
图2是表示对比例的功率半导体装置的结构的剖面图。
图3是按封装树脂的固化温度分别示出封装树脂的线膨胀系数的温度依赖性的图。
图4是对实施方式1的功率半导体装置的制造工序进行说明的图。
图5是表示实施方式2的功率半导体装置的结构的剖面图。
图6是表示实施方式3的功率半导体装置的结构的剖面图。
具体实施方式
＜A.实施方式1＞
＜A-1.结构＞
图1是表示本实施方式的功率半导体装置101的结构的剖面图。功率半导体装置101例如广泛用于家电、工业、汽车、电车等。以下，参照图1对功率半导体装置101的结构进行说明。
功率半导体装置101具有绝缘图案1、导电图案2、IGBT芯片4、二极管芯片6、内框9、12、主端子10、铝线11、信号端子13、内嵌壳体14以及散热针鳍16。在绝缘图案1的上表面形成有2个导电图案2，在这些导电图案2之上分别通过焊料3、5而接合有作为半导体元件的IGBT芯片4以及二极管芯片6。
内框9分别通过焊料7而与IGBT芯片4的上表面接合，通过焊料8而与二极管芯片6的上表面接合。内框9例如由铜形成，与主端子10是相同部件。
在IGBT芯片4的上表面接合有铝线11。铝线11的一端与IGBT芯片4的上表面接合，另一端与内框12接合。内框12例如由铜形成，与信号端子13是相同部件。
在绝缘图案1的下表面接合有散热针鳍16。换言之，绝缘图案1设置在导电图案2与散热针鳍16之间，使两者绝缘。绝缘图案1、导电图案2、IGBT芯片4、二极管芯片6、内框9、12以及铝线11被收容于内嵌壳体14。内嵌壳体14是形成功率半导体装置的外形的框体，具有绝缘功能。散热针鳍16从内嵌壳体14的下表面露出，用于功率半导体装置101的散热。
在内嵌壳体14的内部填充作为第1封装树脂的封装树脂21和作为第2封装树脂的封装树脂22。封装树脂21填充于内嵌壳体14的内部的下侧，将IGBT芯片4和二极管芯片6覆盖。封装树脂22填充于封装树脂21的上侧，即内嵌壳体14的内部的上侧。另外，封装树脂21在大于或等于125℃而小于或等于200℃的高温域具有比封装树脂22低的线膨胀系数。即，如果将封装树脂21的线膨胀系数设为α1，将封装树脂22的线膨胀系数设为α2，则在上述高温域呈α1＜α2的关系。
图2是表示本实施方式的对比例的功率半导体装置101E的结构的剖面图。就功率半导体装置101E而言，在内嵌壳体14的内部仅填充有一种封装树脂23来代替封装树脂21、22，仅这一点与功率半导体装置101不同。
图3是按封装树脂的固化温度分别示出封装树脂的线膨胀系数的温度依赖性的图表。纵轴表示线膨胀系数α(ppm/℃)，横轴表示温度(℃)。并且，双点划线示出固化温度为140℃的封装树脂的特性，实线示出固化温度为160℃的封装树脂的特性，单点划线示出固化温度为180℃的封装树脂的特性，虚线示出固化温度为200℃的封装树脂的特性。
另外，就功率半导体装置101E而言，被封装树脂23封装、通过焊料7、8而与IGBT芯片4以及二极管芯片6接合的内框9通常使用铜。这是因为铜的电阻低，由此抑制了功率半导体装置101E的通电时损耗。在大于或等于20℃而小于或等于227℃的温度范围，铜的线膨胀系数α为16.5-18.3(ppm/℃)，为大约17(ppm/℃)。
参照图3，对固化温度为140℃的封装树脂23的线膨胀系数进行讨论。在功率半导体装置的工作温度为125℃时，封装树脂23的线膨胀系数为大约17-20(ppm/℃)，与内框9的线膨胀系数的大约17(ppm/℃)大致相等。因此，在封装树脂23和内框9之间的接触部处产生的应力小。
但是，目前由于半导体元件采用SiC等，因此对于功率半导体装置，要求确保高温工作，要求使工作确保范围的上限从以往的125℃上升25℃而上升至150℃。在这里，如果对功率半导体装置101E的工作温度为150℃时进行讨论，则封装树脂23的线膨胀系数变为大于或等于30(ppm/℃)，相对于内框9的线膨胀系数的大约17(ppm/℃)，成为比它还大10(ppm/℃)以上的值。这样，如果线膨胀系数不同的2个部件接触，则产生应力，作为结果而可能在封装树脂23产生裂纹。
作为针对该问题的对策，有效的是通过将封装树脂23的固化温度例如从140℃升高到160℃，从而抑制封装树脂23与内框9之间的线膨胀系数之差。在功率半导体装置101E的工作温度为150℃时，固化温度为160℃的封装树脂23的线膨胀系数为17(ppm/℃)左右，与内框9的线膨胀系数的大约17(ppm/℃)大致相等。由此，能够抑制通过线膨胀系数之差而产生的应力。
但是，由于封装树脂23通常采用热固性树脂，因此固化温度与热固化时的收缩量存在正相关。例如，如果使封装树脂23的固化温度从140℃升高到160℃，则热固化时的收缩量也变大。其结果，存在散热针鳍16等功率半导体装置101E的翘曲量变大的问题。
图1所示的功率半导体装置101同时抑制由线膨胀系数之差引起的封装树脂的裂纹和由封装树脂的热固化时的收缩引起的功率半导体装置的翘曲。
首先，通过使封装树脂21的固化温度比封装树脂22高，从而在大于或等于125℃而小于或等于200℃的高温域，使封装树脂21的线膨胀系数为大约17(ppm/℃)。这样，通过使封装树脂21的线膨胀系数接近内框9，从而能够抑制由线膨胀系数之差引起的封装树脂21的裂纹。
由于封装树脂21与封装树脂22相比固化温度高，因此在热固化时封装树脂21与封装树脂22相比收缩得大。但是，由于封装树脂21设置于功率半导体装置101的中央部的下侧，因此能够抑制由封装树脂21的收缩引起的功率半导体装置101的翘曲。此外，这里，将内框9的从下表面向上表面的高度方向的中央部设为功率半导体装置101的中央部。
封装树脂22设置于功率半导体装置101的中央部的上侧，但由于与封装树脂21相比固化温度低，因此热固化时不会像封装树脂21那样收缩。因此，功率半导体装置101整体的翘曲得到抑制。
此外，由于封装树脂22在大于或等于125℃而小于或等于200℃的高温域的线膨胀系数比内框9大，因此可能产生由线膨胀系数之差引起的应力。但是，由于封装树脂22不直接覆盖IGBT芯片4以及二极管芯片6，因此，即使在封装树脂22产生了裂纹，对IGBT芯片4以及二极管芯片6的影响也小，确保了功率半导体装置101的可靠性。
＜A-2.制造方法＞
对功率半导体装置101的制造方法进行说明。
首先，在绝缘图案1的上表面形成导电图案2，在导电图案2之上经由焊料3、5而接合IGBT芯片4和二极管芯片6。
接下来，在IGBT芯片4的上表面经由焊料7、8而接合内框9。
在绝缘图案1的下表面接合散热针鳍16。
接下来，将散热针鳍16、绝缘图案1、导电图案2、IGBT芯片4、二极管芯片6以及内框9的接合体收容于内嵌壳体14。此时，使散热针鳍16的下表面从内嵌壳体14露出。
接下来，在内嵌壳体14形成信号端子侧的内框12，通过铝线11将内框12与IGBT芯片4的上表面键合。
然后，使用树脂注入装置向内嵌壳体14内浇注封装树脂21。此时，封装树脂21是以至少将IGBT芯片4以及二极管芯片6覆盖的方式填充的。并且，通过封装树脂21将特别地施加由线膨胀系数之差引起的应力的内框9的下表面的边缘覆盖，由此能够有效地抑制由线膨胀系数之差引起的应力所导致的裂纹。
另外，如图1所示，优选铝线11全部被封装树脂21覆盖。如果铝线11由封装树脂21和封装树脂22这两者封装，则由封装树脂21与封装树脂22的线膨胀系数之差引起的应力会施加于铝线11。但是，通过由封装树脂21覆盖铝线11的整体，从而能够防止上述应力施加于铝线11。
接下来，通过加热使封装树脂21固化。这里的封装树脂21的固化温度即第1温度设为例如140℃，设定得比后述的封装树脂22的固化温度即第2温度低。
在内框9使用铜的情况下，由于封装树脂21固化时的热量而使内框9的表面氧化，内框9与内嵌壳体14之间的粘接强度下降。因此，在封装树脂21固化之后，如图4的箭头31所示，对封装树脂21以及内框9的上表面进行紫外线(UV)照射。由此，除了内框9与内嵌壳体14之间的粘接强度增加以外，还提高了封装树脂21、22间的粘接强度。其结果，能够得到具有高可靠性的功率半导体装置101。
然后，使用树脂注入装置向内嵌壳体14内浇注封装树脂22，在封装树脂21的上方填充封装树脂22。然后，通过加热而使封装树脂22固化。将封装树脂22的固化温度即第2温度设为例如180℃，设定得比封装树脂21的固化温度即第1温度低。由此，完成功率半导体装置101。
＜A-3.效果＞
如以上说明的那样，实施方式1的功率半导体装置101具有：作为半导体元件的IGBT芯片4以及二极管芯片6；作为端子的内框9，其与半导体元件的上表面接合；作为框体的内嵌壳体14，其对半导体元件以及内框9进行收容；以及封装树脂，其在内嵌壳体内将半导体元件以及内框9封装。并且，封装树脂具有至少将半导体元件覆盖的第1封装树脂即封装树脂21和在封装树脂21的上方形成的第2封装树脂即封装树脂22。另外，在半导体元件的工作温度下，封装树脂21与封装树脂22相比线膨胀系数小，封装树脂21与内框9之间的线膨胀系数之差比封装树脂22与内框9之间的线膨胀系数之差小。
如上所述，通过使将半导体元件覆盖的封装树脂21的线膨胀系数接近内框9，从而能够缓和由于封装树脂21与内框9之间的线膨胀系数之差而施加至封装树脂21的应力。因此，抑制了封装树脂21的裂纹。另外，通过在封装树脂21的上方设置线膨胀系数更大的封装树脂22，从而能够使封装树脂22的固化温度比封装树脂21小。因此，封装树脂22热固化时的收缩量比封装树脂21小。其结果，与仅通过封装树脂21而将内嵌壳体14内进行封装的情况相比，能够将功率半导体装置101的翘曲抑制两成。
在内框9的半导体元件侧的面即下表面的边缘的周边，强烈地施加有由与内框9之间的线膨胀系数之差引起的应力，容易产生裂纹。因此，就功率半导体装置101而言，通过由封装树脂21将内框9的下表面的边缘覆盖，从而能够有效地抑制由于因与内框9之间的线膨胀系数之差引起的应力而使封装树脂21产生的裂纹。
就功率半导体装置101而言，在内框9使用铜的情况下。铜的线膨胀系数在大于或等于20℃而小于或等于227℃的温度范围为大约17(ppm/℃)。因此，通过将封装树脂21的固化温度设为大于或等于160℃，从而能够在150℃的工作温度下实现与内框9接近的线膨胀系数。因此，能够抑制由于线膨胀系数之差而使封装树脂21产生的裂纹。
在IGBT芯片4或二极管芯片6这样的半导体元件是SiC半导体元件的情况下，功率半导体装置101要求确保高温工作。但是，在高温工作区域，通过使封装树脂21的线膨胀系数比封装树脂22小，使封装树脂21与内框9之间的线膨胀系数之差比封装树脂22与内框9之间的线膨胀系数之差小，从而能够缓和施加于封装树脂21的应力，并且抑制功率半导体装置101整体的翘曲。
封装树脂21和封装树脂22也可以使用相同的材料。通过使用相同的材料，从而能够使封装树脂21和封装树脂22共用树脂注入装置，可以削减树脂注入装置的引入费用以及配置面积。因此，能够降低功率半导体装置101的制造成本。
在实施方式1的功率半导体装置101的制造方法中，使内框9与IGBT芯片4以及二极管芯片6的上表面接合，由内嵌壳体14收容IGBT芯片4、二极管芯片6以及内框9，以内框9的上表面露出的方式通过封装树脂21将内嵌壳体14内的IGBT芯片4以及二极管芯片6覆盖，使封装树脂21在第1温度下固化，在内嵌壳体14内在封装树脂21之上形成封装树脂22，使封装树脂22在比第1温度低的第2温度下固化。
另外，根据实施方式1的功率半导体装置101的制造方法，在封装树脂21固化之后、封装树脂22形成之前，对封装树脂21的上表面以及内框9的上表面照射紫外线。因此，除了能够增加内框9与内嵌壳体14之间的粘接强度以外，还能够提高封装树脂21、22间的粘接强度，得到具有高可靠性的功率半导体装置101。
＜B.实施方式2＞
＜B-1.结构＞
图5是表示实施方式2的功率半导体装置102的结构的剖面图。就功率半导体装置102而言，内嵌壳体14的内侧面具有凹部15。除此以外，功率半导体装置102的结构与实施方式1的功率半导体装置101相同。
在图5中，凹部15形成于横跨封装树脂21与封装树脂22的边界的位置，封装树脂21和封装树脂22这两者以进入凹部15的方式形成。由此，封装树脂21和封装树脂22通过锚固效应而与内嵌壳体14牢固地接合。其结果，即使在高温时产生了由封装树脂21、22的线膨胀系数差引起的应力的情况下，也能够抑制封装树脂21、22的界面剥离。
此外，也可以是封装树脂21和封装树脂22中的某一者以进入凹部15的方式形成。即使在这种情况下，由于进入凹部15的封装树脂与内嵌壳体14之间的接合变得牢固，所以作为结果，也能够抑制由于因封装树脂21、22的线膨胀系数差引起的应力而产生的封装树脂21、22的界面剥离。
＜B-2.效果＞
实施方式2的功率半导体装置102在框体即内嵌壳体14的内侧面具有凹部15。因此，进入凹部15的封装树脂与内嵌壳体14之间的接合变得牢固，抑制了封装树脂21、22的界面剥离。
另外，在封装树脂21、22这两者以进入该凹部15的方式形成的情况下，锚定效应对于封装树脂21、22这两者起作用而使它们与内嵌壳体14牢固地接合，因此更进一步抑制了封装树脂21、22的界面剥离。
＜C.实施方式3＞
＜C-1.结构＞
图6是表示实施方式3的功率半导体装置103的结构的剖面图。功率半导体装置103在封装树脂21与封装树脂22之间具有聚酰亚胺层17。除此以外，功率半导体装置103的结构与实施方式2的功率半导体装置102相同。
聚酰亚胺层17与固化后的封装树脂21、22相比维氏硬度低，因此吸收封装树脂21、22间的应力。因此，能够提高封装树脂21与聚酰亚胺层17之间、以及聚酰亚胺层17与封装树脂22之间的密接性。由此，得到可靠性高的功率半导体装置103。
＜C-2.效果＞
由于实施方式3的功率半导体装置103在封装树脂21与封装树脂22之间具有聚酰亚胺层17，因此封装树脂21与聚酰亚胺层17之间、以及聚酰亚胺层17与封装树脂22之间的密接性提高，得到高可靠性。
此外，本发明能够在其发明的范围内对各实施方式自由地组合，或者对各实施方式适当地进行变形、省略。
对于本发明进行了详细说明，但上述说明在所有方面均为例示，本发明不限定于此。可以理解为在不脱离该发明的范围的情况下能够想到未例示出的无数的变形例。
标号的说明
1绝缘图案，2导电图案，3、5、7、8焊料，4IGBT芯片，6二极管芯片，9、12内框，10主端子，11铝线，13信号端子，14内嵌壳体，15凹部，16散热针鳍，17聚酰亚胺层，21、22、23封装树脂，101、101E、102、103功率半导体装置。

Claims (11)

1.一种功率半导体装置，其具有：
绝缘图案；
导电图案，其形成于所述绝缘图案的上表面；
半导体元件，其搭载于所述导电图案之上；
端子，其与所述半导体元件的上表面接合；
框体，其将所述半导体元件以及所述端子收容；以及
封装树脂，其在所述框体内将所述半导体元件以及所述端子封装，
所述封装树脂具有：
第1封装树脂，其至少将所述绝缘图案、所述导电图案以及所述半导体元件覆盖；以及
第2封装树脂，其形成于所述第1封装树脂的上方，
在所述半导体元件的工作温度下，所述第1封装树脂与所述第2封装树脂相比线膨胀系数小，所述第1封装树脂与所述端子之间的线膨胀系数之差比所述第2封装树脂与所述端子之间的线膨胀系数之差小。
2.根据权利要求1所述的功率半导体装置，其中，
所述第1封装树脂将所述端子的所述半导体元件侧的边缘覆盖。
3.根据权利要求1或2所述的功率半导体装置，其中，
所述端子是铜。
4.根据权利要求1或2所述的功率半导体装置，其中，
所述半导体元件是SiC半导体元件。
5.根据权利要求1或2所述的功率半导体装置，其中，
所述第1封装树脂和所述第2封装树脂由相同的材料构成。
6.根据权利要求1或2所述的功率半导体装置，其中，
还具有与所述半导体元件连接的铝线，
所述铝线不与所述第2封装树脂接触，而被所述第1封装树脂覆盖。
7.根据权利要求1或2所述的功率半导体装置，其中，
所述框体的内侧面具有凹部。
8.根据权利要求7所述的功率半导体装置，其中，
所述第1封装树脂以及所述第2封装树脂以进入所述凹部的方式形成。
9.根据权利要求1或2所述的功率半导体装置，其中，
在所述第1封装树脂与所述第2封装树脂之间还具有聚酰亚胺层。
10.一种功率半导体装置的制造方法，其中，
将半导体元件搭载至在绝缘图案的上表面形成的导电图案之上，
将端子与所述半导体元件的上表面接合，
通过框体将所述半导体元件以及所述端子收容，
以使所述端子的上表面露出的方式通过第1封装树脂将所述框体内的所述绝缘图案、所述导电图案以及所述半导体元件覆盖，
使所述第1封装树脂在第1温度下固化，
在所述框体内，在所述第1封装树脂之上形成第2封装树脂，
使所述第2封装树脂在比所述第1温度低的第2温度下固化。
11.根据权利要求10所述的功率半导体装置的制造方法，其中，
在所述第1封装树脂固化之后、所述第2封装树脂形成之前，对所述第1封装树脂以及所述端子的上表面照射紫外线。
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