CN108966673B - 硅基板的研磨方法和研磨用组合物套组 - Google Patents

硅基板的研磨方法和研磨用组合物套组 Download PDF

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Publication number
CN108966673B
CN108966673B CN201780014069.1A CN201780014069A CN108966673B CN 108966673 B CN108966673 B CN 108966673B CN 201780014069 A CN201780014069 A CN 201780014069A CN 108966673 B CN108966673 B CN 108966673B
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China
Prior art keywords
polishing
slurry
grinding
final
silicon substrate
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CN201780014069.1A
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English (en)
Chinese (zh)
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CN108966673A (zh
Inventor
田畑诚
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Fujimi Inc
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Fujimi Inc
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • H10P52/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H10P70/15—
    • H10P90/129—

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201780014069.1A 2016-02-29 2017-02-13 硅基板的研磨方法和研磨用组合物套组 Active CN108966673B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016037247A JP6377656B2 (ja) 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット
JP2016-037247 2016-02-29
PCT/JP2017/005139 WO2017150157A1 (ja) 2016-02-29 2017-02-13 シリコン基板の研磨方法および研磨用組成物セット

Publications (2)

Publication Number Publication Date
CN108966673A CN108966673A (zh) 2018-12-07
CN108966673B true CN108966673B (zh) 2024-02-27

Family

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CN201780014069.1A Active CN108966673B (zh) 2016-02-29 2017-02-13 硅基板的研磨方法和研磨用组合物套组

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Country Link
US (1) US11648641B2 (enExample)
EP (1) EP3425658B1 (enExample)
JP (1) JP6377656B2 (enExample)
KR (1) KR102612276B1 (enExample)
CN (1) CN108966673B (enExample)
SG (1) SG11201807050SA (enExample)
TW (1) TWI797076B (enExample)
WO (1) WO2017150157A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102818338B1 (ko) * 2019-03-27 2025-06-11 가부시키가이샤 후지미인코퍼레이티드 규소-규소 결합을 갖는 재료를 포함하는 연마 대상물의 연마 방법
WO2020255581A1 (ja) * 2019-06-20 2020-12-24 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
JPWO2021241505A1 (enExample) * 2020-05-27 2021-12-02

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WO2001070457A1 (en) * 2000-03-17 2001-09-27 Wafer Solutions, Inc Grind polish cluster and double side polishing of substrates
WO2004068569A1 (ja) * 2003-01-28 2004-08-12 Shin-Etsu Handotai Co., Ltd. 半導体ウエーハの製造方法
CN1670115A (zh) * 2004-03-19 2005-09-21 福吉米株式会社 抛光用组合物及抛光方法
JP2006135059A (ja) * 2004-11-05 2006-05-25 Renesas Technology Corp 半導体装置の製造方法
CN1787202A (zh) * 2004-12-08 2006-06-14 上海华虹Nec电子有限公司 浅沟槽隔离工艺中化学机械研磨工艺窗口确定方法
CN1939663A (zh) * 2005-09-30 2007-04-04 福吉米株式会社 研磨方法、研磨用组合物以及研磨用组合物套装
CN102339742A (zh) * 2011-09-01 2012-02-01 上海宏力半导体制造有限公司 多晶硅化学机械研磨工艺的研磨垫预研磨方法
CN102473621A (zh) * 2009-12-10 2012-05-23 日立化成工业株式会社 Cmp研磨液、基板研磨方法和电子部件
CN102766409A (zh) * 2008-04-16 2012-11-07 日立化成工业株式会社 Cmp用研磨液以及研磨方法

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JPH11214338A (ja) * 1998-01-20 1999-08-06 Memc Kk シリコンウェハーの研磨方法
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US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
WO2001070457A1 (en) * 2000-03-17 2001-09-27 Wafer Solutions, Inc Grind polish cluster and double side polishing of substrates
WO2004068569A1 (ja) * 2003-01-28 2004-08-12 Shin-Etsu Handotai Co., Ltd. 半導体ウエーハの製造方法
CN1670115A (zh) * 2004-03-19 2005-09-21 福吉米株式会社 抛光用组合物及抛光方法
JP2006135059A (ja) * 2004-11-05 2006-05-25 Renesas Technology Corp 半導体装置の製造方法
CN1787202A (zh) * 2004-12-08 2006-06-14 上海华虹Nec电子有限公司 浅沟槽隔离工艺中化学机械研磨工艺窗口确定方法
CN1939663A (zh) * 2005-09-30 2007-04-04 福吉米株式会社 研磨方法、研磨用组合物以及研磨用组合物套装
CN102766409A (zh) * 2008-04-16 2012-11-07 日立化成工业株式会社 Cmp用研磨液以及研磨方法
CN102473621A (zh) * 2009-12-10 2012-05-23 日立化成工业株式会社 Cmp研磨液、基板研磨方法和电子部件
CN102339742A (zh) * 2011-09-01 2012-02-01 上海宏力半导体制造有限公司 多晶硅化学机械研磨工艺的研磨垫预研磨方法

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Also Published As

Publication number Publication date
US11648641B2 (en) 2023-05-16
WO2017150157A1 (ja) 2017-09-08
KR102612276B1 (ko) 2023-12-12
US20190022821A1 (en) 2019-01-24
EP3425658A1 (en) 2019-01-09
EP3425658B1 (en) 2024-04-03
KR20180121481A (ko) 2018-11-07
SG11201807050SA (en) 2018-09-27
JP6377656B2 (ja) 2018-08-22
CN108966673A (zh) 2018-12-07
TW201737334A (zh) 2017-10-16
EP3425658A4 (en) 2019-11-13
JP2017157608A (ja) 2017-09-07
TWI797076B (zh) 2023-04-01

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