JP6377656B2 - シリコン基板の研磨方法および研磨用組成物セット - Google Patents

シリコン基板の研磨方法および研磨用組成物セット Download PDF

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Publication number
JP6377656B2
JP6377656B2 JP2016037247A JP2016037247A JP6377656B2 JP 6377656 B2 JP6377656 B2 JP 6377656B2 JP 2016037247 A JP2016037247 A JP 2016037247A JP 2016037247 A JP2016037247 A JP 2016037247A JP 6377656 B2 JP6377656 B2 JP 6377656B2
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JP
Japan
Prior art keywords
polishing
final
slurry
preliminary
preliminary polishing
Prior art date
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Active
Application number
JP2016037247A
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English (en)
Japanese (ja)
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JP2017157608A5 (enExample
JP2017157608A (ja
Inventor
誠 田畑
誠 田畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2016037247A priority Critical patent/JP6377656B2/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Priority to PCT/JP2017/005139 priority patent/WO2017150157A1/ja
Priority to US16/080,659 priority patent/US11648641B2/en
Priority to CN201780014069.1A priority patent/CN108966673B/zh
Priority to SG11201807050SA priority patent/SG11201807050SA/en
Priority to EP17759628.5A priority patent/EP3425658B1/en
Priority to KR1020187019225A priority patent/KR102612276B1/ko
Priority to TW106106214A priority patent/TWI797076B/zh
Publication of JP2017157608A publication Critical patent/JP2017157608A/ja
Publication of JP2017157608A5 publication Critical patent/JP2017157608A5/ja
Application granted granted Critical
Publication of JP6377656B2 publication Critical patent/JP6377656B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H10P52/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H10P70/15—
    • H10P90/129—

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2016037247A 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット Active JP6377656B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2016037247A JP6377656B2 (ja) 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット
US16/080,659 US11648641B2 (en) 2016-02-29 2017-02-13 Method for polishing silicon substrate and polishing composition set
CN201780014069.1A CN108966673B (zh) 2016-02-29 2017-02-13 硅基板的研磨方法和研磨用组合物套组
SG11201807050SA SG11201807050SA (en) 2016-02-29 2017-02-13 Method for polishing silicon substrate and polishing composition set
PCT/JP2017/005139 WO2017150157A1 (ja) 2016-02-29 2017-02-13 シリコン基板の研磨方法および研磨用組成物セット
EP17759628.5A EP3425658B1 (en) 2016-02-29 2017-02-13 Method for polishing silicon substrate
KR1020187019225A KR102612276B1 (ko) 2016-02-29 2017-02-13 실리콘 기판의 연마 방법 및 연마용 조성물 세트
TW106106214A TWI797076B (zh) 2016-02-29 2017-02-23 矽基板之研磨方法及研磨用組成物套組

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016037247A JP6377656B2 (ja) 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット

Publications (3)

Publication Number Publication Date
JP2017157608A JP2017157608A (ja) 2017-09-07
JP2017157608A5 JP2017157608A5 (enExample) 2017-12-14
JP6377656B2 true JP6377656B2 (ja) 2018-08-22

Family

ID=59743844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016037247A Active JP6377656B2 (ja) 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット

Country Status (8)

Country Link
US (1) US11648641B2 (enExample)
EP (1) EP3425658B1 (enExample)
JP (1) JP6377656B2 (enExample)
KR (1) KR102612276B1 (enExample)
CN (1) CN108966673B (enExample)
SG (1) SG11201807050SA (enExample)
TW (1) TWI797076B (enExample)
WO (1) WO2017150157A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102818338B1 (ko) * 2019-03-27 2025-06-11 가부시키가이샤 후지미인코퍼레이티드 규소-규소 결합을 갖는 재료를 포함하는 연마 대상물의 연마 방법
WO2020255581A1 (ja) * 2019-06-20 2020-12-24 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
JPWO2021241505A1 (enExample) * 2020-05-27 2021-12-02

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US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
JP3219142B2 (ja) * 1997-12-17 2001-10-15 信越半導体株式会社 半導体シリコンウエーハ研磨用研磨剤及び研磨方法
JPH11214338A (ja) * 1998-01-20 1999-08-06 Memc Kk シリコンウェハーの研磨方法
US6431959B1 (en) * 1999-12-20 2002-08-13 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon
US20020004265A1 (en) * 2000-03-17 2002-01-10 Krishna Vepa Grind polish cluster and methods to remove visual grind pattern
AU2001249277A1 (en) * 2000-03-17 2001-10-03 Wafer Solutions, Inc. Grind polish cluster and double side polishing of substrates
CN1217387C (zh) * 2000-10-26 2005-08-31 信越半导体株式会社 单晶片的制造方法及研磨装置以及单晶片
JP2003297775A (ja) * 2002-04-03 2003-10-17 Komatsu Electronic Metals Co Ltd 鏡面半導体ウェーハの製造方法および半導体ウェーハ用研磨スラリ
JP2004165424A (ja) * 2002-11-13 2004-06-10 Ekc Technology Inc 研磨剤組成物とそれによる研磨方法
JP4467241B2 (ja) * 2003-01-28 2010-05-26 信越半導体株式会社 半導体ウエーハの製造方法
KR101088594B1 (ko) * 2003-03-18 2011-12-06 노무라마이크로사이엔스가부시키가이샤 반도체 연마 슬러리 정제용 소재, 반도체 연마 슬러리 정제용 모듈 및 반도체 연마 슬러리의 정제 방법
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
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JP2007103515A (ja) 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
JP5219334B2 (ja) 2005-11-30 2013-06-26 株式会社Ｓｕｍｃｏ 半導体基板の製造方法および品質評価方法
US20110027997A1 (en) 2008-04-16 2011-02-03 Hitachi Chemical Company, Ltd. Polishing liquid for cmp and polishing method
JP2010021487A (ja) * 2008-07-14 2010-01-28 Sumco Corp 半導体ウェーハおよびその製造方法
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CN102339742A (zh) * 2011-09-01 2012-02-01 上海宏力半导体制造有限公司 多晶硅化学机械研磨工艺的研磨垫预研磨方法
JP5460827B2 (ja) * 2012-11-14 2014-04-02 株式会社フジミインコーポレーテッド シリコンウエハの製造方法
DE102013218880A1 (de) 2012-11-20 2014-05-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe, umfassend das gleichzeitige Polieren einer Vorderseite und einer Rückseite einer Substratscheibe

Also Published As

Publication number Publication date
US11648641B2 (en) 2023-05-16
WO2017150157A1 (ja) 2017-09-08
KR102612276B1 (ko) 2023-12-12
CN108966673B (zh) 2024-02-27
US20190022821A1 (en) 2019-01-24
EP3425658A1 (en) 2019-01-09
EP3425658B1 (en) 2024-04-03
KR20180121481A (ko) 2018-11-07
SG11201807050SA (en) 2018-09-27
CN108966673A (zh) 2018-12-07
TW201737334A (zh) 2017-10-16
EP3425658A4 (en) 2019-11-13
JP2017157608A (ja) 2017-09-07
TWI797076B (zh) 2023-04-01

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