SG11201807050SA - Method for polishing silicon substrate and polishing composition set - Google Patents
Method for polishing silicon substrate and polishing composition setInfo
- Publication number
- SG11201807050SA SG11201807050SA SG11201807050SA SG11201807050SA SG11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- silicon substrate
- stock
- final
- sub
- Prior art date
Links
Classifications
-
- H10P52/00—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H10P70/15—
-
- H10P90/129—
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016037247A JP6377656B2 (ja) | 2016-02-29 | 2016-02-29 | シリコン基板の研磨方法および研磨用組成物セット |
| PCT/JP2017/005139 WO2017150157A1 (ja) | 2016-02-29 | 2017-02-13 | シリコン基板の研磨方法および研磨用組成物セット |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201807050SA true SG11201807050SA (en) | 2018-09-27 |
Family
ID=59743844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201807050SA SG11201807050SA (en) | 2016-02-29 | 2017-02-13 | Method for polishing silicon substrate and polishing composition set |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11648641B2 (enExample) |
| EP (1) | EP3425658B1 (enExample) |
| JP (1) | JP6377656B2 (enExample) |
| KR (1) | KR102612276B1 (enExample) |
| CN (1) | CN108966673B (enExample) |
| SG (1) | SG11201807050SA (enExample) |
| TW (1) | TWI797076B (enExample) |
| WO (1) | WO2017150157A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102818338B1 (ko) * | 2019-03-27 | 2025-06-11 | 가부시키가이샤 후지미인코퍼레이티드 | 규소-규소 결합을 갖는 재료를 포함하는 연마 대상물의 연마 방법 |
| WO2020255581A1 (ja) * | 2019-06-20 | 2020-12-24 | 富士フイルム株式会社 | 研磨液、及び、化学的機械的研磨方法 |
| CN110922897B (zh) * | 2019-11-18 | 2024-03-08 | 宁波日晟新材料有限公司 | 一种用于硅化合物的低雾值无损伤抛光液及其制备方法 |
| JPWO2021241505A1 (enExample) * | 2020-05-27 | 2021-12-02 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5860848A (en) * | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
| JP3219142B2 (ja) * | 1997-12-17 | 2001-10-15 | 信越半導体株式会社 | 半導体シリコンウエーハ研磨用研磨剤及び研磨方法 |
| JPH11214338A (ja) * | 1998-01-20 | 1999-08-06 | Memc Kk | シリコンウェハーの研磨方法 |
| US6431959B1 (en) * | 1999-12-20 | 2002-08-13 | Lam Research Corporation | System and method of defect optimization for chemical mechanical planarization of polysilicon |
| US20020004265A1 (en) * | 2000-03-17 | 2002-01-10 | Krishna Vepa | Grind polish cluster and methods to remove visual grind pattern |
| AU2001249277A1 (en) * | 2000-03-17 | 2001-10-03 | Wafer Solutions, Inc. | Grind polish cluster and double side polishing of substrates |
| CN1217387C (zh) * | 2000-10-26 | 2005-08-31 | 信越半导体株式会社 | 单晶片的制造方法及研磨装置以及单晶片 |
| JP2003297775A (ja) * | 2002-04-03 | 2003-10-17 | Komatsu Electronic Metals Co Ltd | 鏡面半導体ウェーハの製造方法および半導体ウェーハ用研磨スラリ |
| JP2004165424A (ja) * | 2002-11-13 | 2004-06-10 | Ekc Technology Inc | 研磨剤組成物とそれによる研磨方法 |
| JP4467241B2 (ja) * | 2003-01-28 | 2010-05-26 | 信越半導体株式会社 | 半導体ウエーハの製造方法 |
| KR101088594B1 (ko) * | 2003-03-18 | 2011-12-06 | 노무라마이크로사이엔스가부시키가이샤 | 반도체 연마 슬러리 정제용 소재, 반도체 연마 슬러리 정제용 모듈 및 반도체 연마 슬러리의 정제 방법 |
| JP2005268665A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| JP2006135059A (ja) * | 2004-11-05 | 2006-05-25 | Renesas Technology Corp | 半導体装置の製造方法 |
| CN100353518C (zh) * | 2004-12-08 | 2007-12-05 | 上海华虹Nec电子有限公司 | 浅沟槽隔离工艺中化学机械抛光工艺窗口确定方法 |
| JP4524643B2 (ja) | 2005-05-18 | 2010-08-18 | 株式会社Sumco | ウェーハ研磨方法 |
| JP2007103515A (ja) | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
| JP5219334B2 (ja) | 2005-11-30 | 2013-06-26 | 株式会社Ｓｕｍｃｏ | 半導体基板の製造方法および品質評価方法 |
| US20110027997A1 (en) | 2008-04-16 | 2011-02-03 | Hitachi Chemical Company, Ltd. | Polishing liquid for cmp and polishing method |
| JP2010021487A (ja) * | 2008-07-14 | 2010-01-28 | Sumco Corp | 半導体ウェーハおよびその製造方法 |
| SG192518A1 (en) | 2008-07-31 | 2013-08-30 | Shinetsu Handotai Kk | Wafer polishing method |
| JP2011142284A (ja) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Ｃｍｐ研磨液、基板の研磨方法及び電子部品 |
| SG182790A1 (en) | 2010-02-01 | 2012-09-27 | Jsr Corp | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method using same |
| CN102339742A (zh) * | 2011-09-01 | 2012-02-01 | 上海宏力半导体制造有限公司 | 多晶硅化学机械研磨工艺的研磨垫预研磨方法 |
| JP5460827B2 (ja) * | 2012-11-14 | 2014-04-02 | 株式会社フジミインコーポレーテッド | シリコンウエハの製造方法 |
| DE102013218880A1 (de) | 2012-11-20 | 2014-05-22 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe, umfassend das gleichzeitige Polieren einer Vorderseite und einer Rückseite einer Substratscheibe |
-
2016
- 2016-02-29 JP JP2016037247A patent/JP6377656B2/ja active Active
-
2017
- 2017-02-13 WO PCT/JP2017/005139 patent/WO2017150157A1/ja not_active Ceased
- 2017-02-13 CN CN201780014069.1A patent/CN108966673B/zh active Active
- 2017-02-13 EP EP17759628.5A patent/EP3425658B1/en active Active
- 2017-02-13 SG SG11201807050SA patent/SG11201807050SA/en unknown
- 2017-02-13 US US16/080,659 patent/US11648641B2/en active Active
- 2017-02-13 KR KR1020187019225A patent/KR102612276B1/ko active Active
- 2017-02-23 TW TW106106214A patent/TWI797076B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US11648641B2 (en) | 2023-05-16 |
| WO2017150157A1 (ja) | 2017-09-08 |
| KR102612276B1 (ko) | 2023-12-12 |
| CN108966673B (zh) | 2024-02-27 |
| US20190022821A1 (en) | 2019-01-24 |
| EP3425658A1 (en) | 2019-01-09 |
| EP3425658B1 (en) | 2024-04-03 |
| KR20180121481A (ko) | 2018-11-07 |
| JP6377656B2 (ja) | 2018-08-22 |
| CN108966673A (zh) | 2018-12-07 |
| TW201737334A (zh) | 2017-10-16 |
| EP3425658A4 (en) | 2019-11-13 |
| JP2017157608A (ja) | 2017-09-07 |
| TWI797076B (zh) | 2023-04-01 |
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