CN102339742A - 多晶硅化学机械研磨工艺的研磨垫预研磨方法 - Google Patents
多晶硅化学机械研磨工艺的研磨垫预研磨方法 Download PDFInfo
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- CN102339742A CN102339742A CN2011102574416A CN201110257441A CN102339742A CN 102339742 A CN102339742 A CN 102339742A CN 2011102574416 A CN2011102574416 A CN 2011102574416A CN 201110257441 A CN201110257441 A CN 201110257441A CN 102339742 A CN102339742 A CN 102339742A
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103208426A (zh) * | 2013-03-22 | 2013-07-17 | 上海宏力半导体制造有限公司 | 沟槽型功率晶体管及其制作方法 |
CN108966673A (zh) * | 2016-02-29 | 2018-12-07 | 福吉米株式会社 | 硅基板的研磨方法和研磨用组合物套组 |
CN112372508A (zh) * | 2020-11-09 | 2021-02-19 | 西安奕斯伟硅片技术有限公司 | 一种修整边缘抛光垫的系统及方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5890951A (en) * | 1996-04-15 | 1999-04-06 | Lsi Logic Corporation | Utility wafer for chemical-mechanical planarization |
CN1349446A (zh) * | 1999-04-20 | 2002-05-15 | Memc电子材料有限公司 | 调节晶片抛光垫的方法 |
US20050260924A1 (en) * | 2004-05-21 | 2005-11-24 | Mosel Vitelic, Inc. | Pad break-in method for chemical mechanical polishing tool which polishes with ceria-based slurry |
JP2006326760A (ja) * | 2005-05-26 | 2006-12-07 | Kao Corp | 基板の連続製造方法 |
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- 2011-09-01 CN CN2011102574416A patent/CN102339742A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5890951A (en) * | 1996-04-15 | 1999-04-06 | Lsi Logic Corporation | Utility wafer for chemical-mechanical planarization |
CN1349446A (zh) * | 1999-04-20 | 2002-05-15 | Memc电子材料有限公司 | 调节晶片抛光垫的方法 |
US20050260924A1 (en) * | 2004-05-21 | 2005-11-24 | Mosel Vitelic, Inc. | Pad break-in method for chemical mechanical polishing tool which polishes with ceria-based slurry |
JP2006326760A (ja) * | 2005-05-26 | 2006-12-07 | Kao Corp | 基板の連続製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103208426A (zh) * | 2013-03-22 | 2013-07-17 | 上海宏力半导体制造有限公司 | 沟槽型功率晶体管及其制作方法 |
CN108966673A (zh) * | 2016-02-29 | 2018-12-07 | 福吉米株式会社 | 硅基板的研磨方法和研磨用组合物套组 |
US11648641B2 (en) | 2016-02-29 | 2023-05-16 | Fujimi Incorporated | Method for polishing silicon substrate and polishing composition set |
CN108966673B (zh) * | 2016-02-29 | 2024-02-27 | 福吉米株式会社 | 硅基板的研磨方法和研磨用组合物套组 |
CN112372508A (zh) * | 2020-11-09 | 2021-02-19 | 西安奕斯伟硅片技术有限公司 | 一种修整边缘抛光垫的系统及方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140430 |
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Effective date of registration: 20140430 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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Application publication date: 20120201 |