KR102612276B1 - 실리콘 기판의 연마 방법 및 연마용 조성물 세트 - Google Patents

실리콘 기판의 연마 방법 및 연마용 조성물 세트 Download PDF

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Publication number
KR102612276B1
KR102612276B1 KR1020187019225A KR20187019225A KR102612276B1 KR 102612276 B1 KR102612276 B1 KR 102612276B1 KR 1020187019225 A KR1020187019225 A KR 1020187019225A KR 20187019225 A KR20187019225 A KR 20187019225A KR 102612276 B1 KR102612276 B1 KR 102612276B1
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South Korea
Prior art keywords
polishing
final
slurry
preliminary
weight
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KR1020187019225A
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English (en)
Korean (ko)
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KR20180121481A (ko
Inventor
마코토 다바타
Original Assignee
가부시키가이샤 후지미인코퍼레이티드
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Publication of KR20180121481A publication Critical patent/KR20180121481A/ko
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Classifications

    • H10P52/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H10P70/15—
    • H10P90/129—

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020187019225A 2016-02-29 2017-02-13 실리콘 기판의 연마 방법 및 연마용 조성물 세트 Active KR102612276B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016037247A JP6377656B2 (ja) 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット
JPJP-P-2016-037247 2016-02-29
PCT/JP2017/005139 WO2017150157A1 (ja) 2016-02-29 2017-02-13 シリコン基板の研磨方法および研磨用組成物セット

Publications (2)

Publication Number Publication Date
KR20180121481A KR20180121481A (ko) 2018-11-07
KR102612276B1 true KR102612276B1 (ko) 2023-12-12

Family

ID=59743844

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187019225A Active KR102612276B1 (ko) 2016-02-29 2017-02-13 실리콘 기판의 연마 방법 및 연마용 조성물 세트

Country Status (8)

Country Link
US (1) US11648641B2 (enExample)
EP (1) EP3425658B1 (enExample)
JP (1) JP6377656B2 (enExample)
KR (1) KR102612276B1 (enExample)
CN (1) CN108966673B (enExample)
SG (1) SG11201807050SA (enExample)
TW (1) TWI797076B (enExample)
WO (1) WO2017150157A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102818338B1 (ko) * 2019-03-27 2025-06-11 가부시키가이샤 후지미인코퍼레이티드 규소-규소 결합을 갖는 재료를 포함하는 연마 대상물의 연마 방법
WO2020255581A1 (ja) * 2019-06-20 2020-12-24 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
JPWO2021241505A1 (enExample) * 2020-05-27 2021-12-02

Citations (2)

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US20020004265A1 (en) * 2000-03-17 2002-01-10 Krishna Vepa Grind polish cluster and methods to remove visual grind pattern
US20030060126A1 (en) 1999-12-20 2003-03-27 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon

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US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
JP3219142B2 (ja) * 1997-12-17 2001-10-15 信越半導体株式会社 半導体シリコンウエーハ研磨用研磨剤及び研磨方法
JPH11214338A (ja) * 1998-01-20 1999-08-06 Memc Kk シリコンウェハーの研磨方法
AU2001249277A1 (en) * 2000-03-17 2001-10-03 Wafer Solutions, Inc. Grind polish cluster and double side polishing of substrates
CN1217387C (zh) * 2000-10-26 2005-08-31 信越半导体株式会社 单晶片的制造方法及研磨装置以及单晶片
JP2003297775A (ja) * 2002-04-03 2003-10-17 Komatsu Electronic Metals Co Ltd 鏡面半導体ウェーハの製造方法および半導体ウェーハ用研磨スラリ
JP2004165424A (ja) * 2002-11-13 2004-06-10 Ekc Technology Inc 研磨剤組成物とそれによる研磨方法
JP4467241B2 (ja) * 2003-01-28 2010-05-26 信越半導体株式会社 半導体ウエーハの製造方法
KR101088594B1 (ko) * 2003-03-18 2011-12-06 노무라마이크로사이엔스가부시키가이샤 반도체 연마 슬러리 정제용 소재, 반도체 연마 슬러리 정제용 모듈 및 반도체 연마 슬러리의 정제 방법
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2006135059A (ja) * 2004-11-05 2006-05-25 Renesas Technology Corp 半導体装置の製造方法
CN100353518C (zh) * 2004-12-08 2007-12-05 上海华虹Nec电子有限公司 浅沟槽隔离工艺中化学机械抛光工艺窗口确定方法
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JP2007103515A (ja) 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
JP5219334B2 (ja) 2005-11-30 2013-06-26 株式会社Ｓｕｍｃｏ 半導体基板の製造方法および品質評価方法
US20110027997A1 (en) 2008-04-16 2011-02-03 Hitachi Chemical Company, Ltd. Polishing liquid for cmp and polishing method
JP2010021487A (ja) * 2008-07-14 2010-01-28 Sumco Corp 半導体ウェーハおよびその製造方法
SG192518A1 (en) 2008-07-31 2013-08-30 Shinetsu Handotai Kk Wafer polishing method
JP2011142284A (ja) * 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Ｃｍｐ研磨液、基板の研磨方法及び電子部品
SG182790A1 (en) 2010-02-01 2012-09-27 Jsr Corp Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method using same
CN102339742A (zh) * 2011-09-01 2012-02-01 上海宏力半导体制造有限公司 多晶硅化学机械研磨工艺的研磨垫预研磨方法
JP5460827B2 (ja) * 2012-11-14 2014-04-02 株式会社フジミインコーポレーテッド シリコンウエハの製造方法
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US20030060126A1 (en) 1999-12-20 2003-03-27 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon
US20020004265A1 (en) * 2000-03-17 2002-01-10 Krishna Vepa Grind polish cluster and methods to remove visual grind pattern

Also Published As

Publication number Publication date
US11648641B2 (en) 2023-05-16
WO2017150157A1 (ja) 2017-09-08
CN108966673B (zh) 2024-02-27
US20190022821A1 (en) 2019-01-24
EP3425658A1 (en) 2019-01-09
EP3425658B1 (en) 2024-04-03
KR20180121481A (ko) 2018-11-07
SG11201807050SA (en) 2018-09-27
JP6377656B2 (ja) 2018-08-22
CN108966673A (zh) 2018-12-07
TW201737334A (zh) 2017-10-16
EP3425658A4 (en) 2019-11-13
JP2017157608A (ja) 2017-09-07
TWI797076B (zh) 2023-04-01

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