SG11201807050SA - Method for polishing silicon substrate and polishing composition set - Google Patents

Method for polishing silicon substrate and polishing composition set

Info

Publication number
SG11201807050SA
SG11201807050SA SG11201807050SA SG11201807050SA SG11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA SG 11201807050S A SG11201807050S A SG 11201807050SA
Authority
SG
Singapore
Prior art keywords
polishing
silicon substrate
stock
final
sub
Prior art date
Application number
SG11201807050SA
Inventor
Makoto Tabata
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201807050SA publication Critical patent/SG11201807050SA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Provided are a method for polishing a silicon substrate according to which PID can be reduced and a polishing composition set usable in the polishing method. The silicon substrate polishing method provided by this invention comprises a stock polishing step and a final polishing step. The stock polishing step comprises several stock polishing sub-steps carried out on one same platen. The several stock polishing sub-steps comprise a final stock polishing sub-step carried out while supplying a final stock polishing slurry PF to the silicon substrate. The total amount of the final stock polishing slurry P F supplied to the silicon substrate during the final stock polishing sub-step has a total weight of Cu and a total weight of Ni, at least one of which being 1 µg or less.
SG11201807050SA 2016-02-29 2017-02-13 Method for polishing silicon substrate and polishing composition set SG11201807050SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016037247A JP6377656B2 (en) 2016-02-29 2016-02-29 Silicon substrate polishing method and polishing composition set
PCT/JP2017/005139 WO2017150157A1 (en) 2016-02-29 2017-02-13 Method for polishing silicon substrate and polishing composition set

Publications (1)

Publication Number Publication Date
SG11201807050SA true SG11201807050SA (en) 2018-09-27

Family

ID=59743844

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201807050SA SG11201807050SA (en) 2016-02-29 2017-02-13 Method for polishing silicon substrate and polishing composition set

Country Status (8)

Country Link
US (1) US11648641B2 (en)
EP (1) EP3425658B1 (en)
JP (1) JP6377656B2 (en)
KR (1) KR102612276B1 (en)
CN (1) CN108966673B (en)
SG (1) SG11201807050SA (en)
TW (1) TWI797076B (en)
WO (1) WO2017150157A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210144718A (en) * 2019-03-27 2021-11-30 가부시키가이샤 후지미인코퍼레이티드 A method of polishing an abrasive object comprising a material having a silicon-silicon bond
WO2020255581A1 (en) * 2019-06-20 2020-12-24 富士フイルム株式会社 Polishing fluid and chemical mechanical polishing method
CN110922897B (en) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 Low-haze nondestructive polishing solution for silicon compound and preparation method thereof
JPWO2021241505A1 (en) * 2020-05-27 2021-12-02

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US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
JP3219142B2 (en) * 1997-12-17 2001-10-15 信越半導体株式会社 Polishing agent for polishing semiconductor silicon wafer and polishing method
JPH11214338A (en) * 1998-01-20 1999-08-06 Memc Kk Method for polishing silicon wafer
US6431959B1 (en) * 1999-12-20 2002-08-13 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon
US20020004265A1 (en) * 2000-03-17 2002-01-10 Krishna Vepa Grind polish cluster and methods to remove visual grind pattern
WO2001070457A1 (en) * 2000-03-17 2001-09-27 Wafer Solutions, Inc Grind polish cluster and double side polishing of substrates
US7582221B2 (en) * 2000-10-26 2009-09-01 Shin-Etsu Handotai Co., Ltd. Wafer manufacturing method, polishing apparatus, and wafer
JP2003297775A (en) * 2002-04-03 2003-10-17 Komatsu Electronic Metals Co Ltd Method for manufacturing mirror-surface semiconductor wafer and polishing slurry
JP2004165424A (en) * 2002-11-13 2004-06-10 Ekc Technology Inc Polishing agent composition and polishing method using the same
JP4467241B2 (en) * 2003-01-28 2010-05-26 信越半導体株式会社 Manufacturing method of semiconductor wafer
US7625262B2 (en) * 2003-03-18 2009-12-01 Nomura Micro Science Co., Ltd. Material for purification of semiconductor polishing slurry, module for purification of semiconductor polishing slurry and process for producing semiconductor polishing slurry
JP2005268665A (en) * 2004-03-19 2005-09-29 Fujimi Inc Polishing composition
JP2006135059A (en) * 2004-11-05 2006-05-25 Renesas Technology Corp Method for manufacturing semiconductor device
CN100353518C (en) * 2004-12-08 2007-12-05 上海华虹Nec电子有限公司 Method for determining chemical mechanical milling tech. window in shallow slot isolation tech.
JP4524643B2 (en) 2005-05-18 2010-08-18 株式会社Ｓｕｍｃｏ Wafer polishing method
JP2007103515A (en) 2005-09-30 2007-04-19 Fujimi Inc Polishing method
JP5219334B2 (en) * 2005-11-30 2013-06-26 株式会社Ｓｕｍｃｏ Semiconductor substrate manufacturing method and quality evaluation method
TWI485234B (en) * 2008-04-16 2015-05-21 Hitachi Chemical Co Ltd Polishing agent for cmp and polishing method
JP2010021487A (en) 2008-07-14 2010-01-28 Sumco Corp Semiconductor wafer and manufacturing method thereof
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JP5460827B2 (en) * 2012-11-14 2014-04-02 株式会社フジミインコーポレーテッド Silicon wafer manufacturing method
DE102013218880A1 (en) 2012-11-20 2014-05-22 Siltronic Ag A method of polishing a semiconductor wafer, comprising simultaneously polishing a front side and a back side of a substrate wafer

Also Published As

Publication number Publication date
TWI797076B (en) 2023-04-01
KR20180121481A (en) 2018-11-07
JP6377656B2 (en) 2018-08-22
JP2017157608A (en) 2017-09-07
CN108966673B (en) 2024-02-27
CN108966673A (en) 2018-12-07
EP3425658B1 (en) 2024-04-03
US11648641B2 (en) 2023-05-16
EP3425658A1 (en) 2019-01-09
EP3425658A4 (en) 2019-11-13
KR102612276B1 (en) 2023-12-12
WO2017150157A1 (en) 2017-09-08
TW201737334A (en) 2017-10-16
US20190022821A1 (en) 2019-01-24

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