SG11201900740XA - Slurry composition for polishing tungsten barrier layer - Google Patents

Slurry composition for polishing tungsten barrier layer

Info

Publication number
SG11201900740XA
SG11201900740XA SG11201900740XA SG11201900740XA SG11201900740XA SG 11201900740X A SG11201900740X A SG 11201900740XA SG 11201900740X A SG11201900740X A SG 11201900740XA SG 11201900740X A SG11201900740X A SG 11201900740XA SG 11201900740X A SG11201900740X A SG 11201900740XA
Authority
SG
Singapore
Prior art keywords
barrier layer
slurry composition
tungsten barrier
polishing
polishing tungsten
Prior art date
Application number
SG11201900740XA
Inventor
Han Teo Park
Hyun Goo Kong
Sang Mi Lee
Original Assignee
Kctech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kctech Co Ltd filed Critical Kctech Co Ltd
Publication of SG11201900740XA publication Critical patent/SG11201900740XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Abstract

The present invention relates to a slurry composition for polishing a tungsten barrier layer. A slurry composition for polishing a tungsten barrier layer according to an embodiment of the present invention comprises abrasive grains and a sulfur-containing amino acid, and can improve edge over erosion (EOE). 5
SG11201900740XA 2016-08-05 2017-06-16 Slurry composition for polishing tungsten barrier layer SG11201900740XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160099872A KR101833219B1 (en) 2016-08-05 2016-08-05 Slurry composition for tungsten barrier layer polishing
PCT/KR2017/006314 WO2018026099A1 (en) 2016-08-05 2017-06-16 Slurry composition for polishing tungsten barrier layer

Publications (1)

Publication Number Publication Date
SG11201900740XA true SG11201900740XA (en) 2019-02-27

Family

ID=61074054

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900740XA SG11201900740XA (en) 2016-08-05 2017-06-16 Slurry composition for polishing tungsten barrier layer

Country Status (8)

Country Link
US (1) US20200157382A1 (en)
EP (1) EP3495439A4 (en)
JP (1) JP2019530250A (en)
KR (1) KR101833219B1 (en)
CN (1) CN109563375B (en)
SG (1) SG11201900740XA (en)
TW (1) TWI651378B (en)
WO (1) WO2018026099A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019043819A1 (en) * 2017-08-30 2019-03-07 日立化成株式会社 Slurry and polishing method
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
KR20200109549A (en) 2019-03-13 2020-09-23 삼성전자주식회사 Polishing slurry and method of manufacturing semiconductor device
CN110923718B (en) * 2019-12-12 2022-05-06 广东红日星实业有限公司 Water-soluble fine polishing solution and preparation method thereof
CN111748286A (en) * 2020-06-30 2020-10-09 中国科学院上海微系统与信息技术研究所 Metal cobalt polishing solution and application thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
EP1086484A4 (en) * 1998-04-10 2003-08-06 Ferro Corp Slurry for chemical-mechanical polishing metal surfaces
US20030139047A1 (en) * 2002-01-24 2003-07-24 Thomas Terence M. Metal polishing slurry having a static etch inhibitor and method of formulation
JP4027929B2 (en) * 2004-11-30 2007-12-26 花王株式会社 Polishing liquid composition for semiconductor substrate
KR100770571B1 (en) 2006-06-05 2007-10-26 테크노세미켐 주식회사 Chemical mechanical polishing slurry of tungsten layer
WO2008080097A2 (en) * 2006-12-21 2008-07-03 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
JP6028432B2 (en) * 2012-07-17 2016-11-16 日立化成株式会社 Polishing liquid for CMP, storage liquid for polishing liquid for CMP, and polishing method
KR101465603B1 (en) * 2012-12-18 2014-11-27 주식회사 케이씨텍 Cmp slurry composition for polishing copper barrier layer and polishing method using the same
KR101465604B1 (en) * 2012-12-18 2014-11-27 주식회사 케이씨텍 Cmp slurry composition for polishing copper barrier layer and polishing method using the same
JP6057706B2 (en) * 2012-12-28 2017-01-11 株式会社フジミインコーポレーテッド Polishing composition
KR102390630B1 (en) * 2014-03-12 2022-04-26 씨엠씨 머티리얼즈, 인코포레이티드 Compositions and methods for cmp of tungsten materials
KR101674083B1 (en) * 2014-08-01 2016-11-08 주식회사 케이씨텍 Slurry for metal film polishing

Also Published As

Publication number Publication date
TWI651378B (en) 2019-02-21
CN109563375B (en) 2021-04-06
CN109563375A (en) 2019-04-02
KR101833219B1 (en) 2018-04-13
EP3495439A4 (en) 2020-07-29
JP2019530250A (en) 2019-10-17
KR20180016029A (en) 2018-02-14
US20200157382A1 (en) 2020-05-21
TW201805382A (en) 2018-02-16
EP3495439A1 (en) 2019-06-12
WO2018026099A1 (en) 2018-02-08

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