JP2017157608A5 - - Google Patents

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Publication number
JP2017157608A5
JP2017157608A5 JP2016037247A JP2016037247A JP2017157608A5 JP 2017157608 A5 JP2017157608 A5 JP 2017157608A5 JP 2016037247 A JP2016037247 A JP 2016037247A JP 2016037247 A JP2016037247 A JP 2016037247A JP 2017157608 A5 JP2017157608 A5 JP 2017157608A5
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JP
Japan
Prior art keywords
polishing
final
preliminary
slurry
weight
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JP2016037247A
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English (en)
Japanese (ja)
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JP6377656B2 (ja
JP2017157608A (ja
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Priority claimed from JP2016037247A external-priority patent/JP6377656B2/ja
Priority to JP2016037247A priority Critical patent/JP6377656B2/ja
Priority to KR1020187019225A priority patent/KR102612276B1/ko
Priority to CN201780014069.1A priority patent/CN108966673B/zh
Priority to SG11201807050SA priority patent/SG11201807050SA/en
Priority to PCT/JP2017/005139 priority patent/WO2017150157A1/ja
Priority to EP17759628.5A priority patent/EP3425658B1/en
Priority to US16/080,659 priority patent/US11648641B2/en
Priority to TW106106214A priority patent/TWI797076B/zh
Publication of JP2017157608A publication Critical patent/JP2017157608A/ja
Publication of JP2017157608A5 publication Critical patent/JP2017157608A5/ja
Publication of JP6377656B2 publication Critical patent/JP6377656B2/ja
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JP2016037247A 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット Active JP6377656B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2016037247A JP6377656B2 (ja) 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット
US16/080,659 US11648641B2 (en) 2016-02-29 2017-02-13 Method for polishing silicon substrate and polishing composition set
CN201780014069.1A CN108966673B (zh) 2016-02-29 2017-02-13 硅基板的研磨方法和研磨用组合物套组
SG11201807050SA SG11201807050SA (en) 2016-02-29 2017-02-13 Method for polishing silicon substrate and polishing composition set
PCT/JP2017/005139 WO2017150157A1 (ja) 2016-02-29 2017-02-13 シリコン基板の研磨方法および研磨用組成物セット
EP17759628.5A EP3425658B1 (en) 2016-02-29 2017-02-13 Method for polishing silicon substrate
KR1020187019225A KR102612276B1 (ko) 2016-02-29 2017-02-13 실리콘 기판의 연마 방법 및 연마용 조성물 세트
TW106106214A TWI797076B (zh) 2016-02-29 2017-02-23 矽基板之研磨方法及研磨用組成物套組

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016037247A JP6377656B2 (ja) 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット

Publications (3)

Publication Number Publication Date
JP2017157608A JP2017157608A (ja) 2017-09-07
JP2017157608A5 true JP2017157608A5 (enExample) 2017-12-14
JP6377656B2 JP6377656B2 (ja) 2018-08-22

Family

ID=59743844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016037247A Active JP6377656B2 (ja) 2016-02-29 2016-02-29 シリコン基板の研磨方法および研磨用組成物セット

Country Status (8)

Country Link
US (1) US11648641B2 (enExample)
EP (1) EP3425658B1 (enExample)
JP (1) JP6377656B2 (enExample)
KR (1) KR102612276B1 (enExample)
CN (1) CN108966673B (enExample)
SG (1) SG11201807050SA (enExample)
TW (1) TWI797076B (enExample)
WO (1) WO2017150157A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102818338B1 (ko) * 2019-03-27 2025-06-11 가부시키가이샤 후지미인코퍼레이티드 규소-규소 결합을 갖는 재료를 포함하는 연마 대상물의 연마 방법
WO2020255581A1 (ja) * 2019-06-20 2020-12-24 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
JPWO2021241505A1 (enExample) * 2020-05-27 2021-12-02

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JPH11214338A (ja) * 1998-01-20 1999-08-06 Memc Kk シリコンウェハーの研磨方法
US6431959B1 (en) * 1999-12-20 2002-08-13 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon
US20020004265A1 (en) * 2000-03-17 2002-01-10 Krishna Vepa Grind polish cluster and methods to remove visual grind pattern
AU2001249277A1 (en) * 2000-03-17 2001-10-03 Wafer Solutions, Inc. Grind polish cluster and double side polishing of substrates
CN1217387C (zh) * 2000-10-26 2005-08-31 信越半导体株式会社 单晶片的制造方法及研磨装置以及单晶片
JP2003297775A (ja) * 2002-04-03 2003-10-17 Komatsu Electronic Metals Co Ltd 鏡面半導体ウェーハの製造方法および半導体ウェーハ用研磨スラリ
JP2004165424A (ja) * 2002-11-13 2004-06-10 Ekc Technology Inc 研磨剤組成物とそれによる研磨方法
JP4467241B2 (ja) * 2003-01-28 2010-05-26 信越半導体株式会社 半導体ウエーハの製造方法
KR101088594B1 (ko) * 2003-03-18 2011-12-06 노무라마이크로사이엔스가부시키가이샤 반도체 연마 슬러리 정제용 소재, 반도체 연마 슬러리 정제용 모듈 및 반도체 연마 슬러리의 정제 방법
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
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JP4524643B2 (ja) 2005-05-18 2010-08-18 株式会社Sumco ウェーハ研磨方法
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JP5219334B2 (ja) 2005-11-30 2013-06-26 株式会社Ｓｕｍｃｏ 半導体基板の製造方法および品質評価方法
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JP2010021487A (ja) * 2008-07-14 2010-01-28 Sumco Corp 半導体ウェーハおよびその製造方法
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JP2011142284A (ja) * 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Ｃｍｐ研磨液、基板の研磨方法及び電子部品
SG182790A1 (en) 2010-02-01 2012-09-27 Jsr Corp Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method using same
CN102339742A (zh) * 2011-09-01 2012-02-01 上海宏力半导体制造有限公司 多晶硅化学机械研磨工艺的研磨垫预研磨方法
JP5460827B2 (ja) * 2012-11-14 2014-04-02 株式会社フジミインコーポレーテッド シリコンウエハの製造方法
DE102013218880A1 (de) 2012-11-20 2014-05-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe, umfassend das gleichzeitige Polieren einer Vorderseite und einer Rückseite einer Substratscheibe

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