JP2008205147A5 - - Google Patents

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Publication number
JP2008205147A5
JP2008205147A5 JP2007038937A JP2007038937A JP2008205147A5 JP 2008205147 A5 JP2008205147 A5 JP 2008205147A5 JP 2007038937 A JP2007038937 A JP 2007038937A JP 2007038937 A JP2007038937 A JP 2007038937A JP 2008205147 A5 JP2008205147 A5 JP 2008205147A5
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JP
Japan
Prior art keywords
polishing
single crystal
silicon single
crystal wafer
final
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007038937A
Other languages
English (en)
Japanese (ja)
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JP4696086B2 (ja
JP2008205147A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2007038937A external-priority patent/JP4696086B2/ja
Priority to JP2007038937A priority Critical patent/JP4696086B2/ja
Priority to KR1020097017021A priority patent/KR101399343B1/ko
Priority to PCT/JP2008/000101 priority patent/WO2008102521A1/ja
Priority to US12/449,017 priority patent/US8569148B2/en
Priority to DE112008000396T priority patent/DE112008000396T5/de
Priority to TW097104274A priority patent/TWI414012B/zh
Publication of JP2008205147A publication Critical patent/JP2008205147A/ja
Publication of JP2008205147A5 publication Critical patent/JP2008205147A5/ja
Publication of JP4696086B2 publication Critical patent/JP4696086B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007038937A 2007-02-20 2007-02-20 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ Active JP4696086B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007038937A JP4696086B2 (ja) 2007-02-20 2007-02-20 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ
DE112008000396T DE112008000396T5 (de) 2007-02-20 2008-01-29 Endpolierverfahren für Einkristall-Siliziumwafer und Einkristall-Siliziumwafer
PCT/JP2008/000101 WO2008102521A1 (ja) 2007-02-20 2008-01-29 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ
US12/449,017 US8569148B2 (en) 2007-02-20 2008-01-29 Final polishing method for silicon single crystal wafer and silicon single crystal wafer
KR1020097017021A KR101399343B1 (ko) 2007-02-20 2008-01-29 실리콘 단결정 웨이퍼의 마무리 연마방법 및 실리콘 단결정 웨이퍼
TW097104274A TWI414012B (zh) 2007-02-20 2008-02-04 Single crystal silicon wafer finishing grinding method and single crystal silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007038937A JP4696086B2 (ja) 2007-02-20 2007-02-20 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ

Publications (3)

Publication Number Publication Date
JP2008205147A JP2008205147A (ja) 2008-09-04
JP2008205147A5 true JP2008205147A5 (enExample) 2010-06-24
JP4696086B2 JP4696086B2 (ja) 2011-06-08

Family

ID=39709802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007038937A Active JP4696086B2 (ja) 2007-02-20 2007-02-20 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ

Country Status (6)

Country Link
US (1) US8569148B2 (enExample)
JP (1) JP4696086B2 (enExample)
KR (1) KR101399343B1 (enExample)
DE (1) DE112008000396T5 (enExample)
TW (1) TWI414012B (enExample)
WO (1) WO2008102521A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010131683A (ja) * 2008-12-02 2010-06-17 Sumco Corp シリコンウェーハの研磨方法
SG176631A1 (en) 2009-06-05 2012-01-30 Sumco Corp Method of polishing silicon wafer as well as silicon wafer
DE112010002718B4 (de) 2009-06-26 2019-11-21 Sumco Corp. Verfahren zur reinigung eines siliciumwafers sowie verfahren zur herstellung eines epitaktischen wafers unter verwendung des reinigungsverfahrens
JP5888280B2 (ja) 2013-04-18 2016-03-16 信越半導体株式会社 シリコンウエーハの研磨方法およびエピタキシャルウエーハの製造方法
JP6160579B2 (ja) * 2014-08-05 2017-07-12 信越半導体株式会社 シリコンウェーハの仕上げ研磨方法
JP6418174B2 (ja) * 2016-02-03 2018-11-07 株式会社Sumco シリコンウェーハの片面研磨方法
JP2018085411A (ja) * 2016-11-22 2018-05-31 株式会社ディスコ ウエーハの加工方法
US10636673B2 (en) 2017-09-28 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
JP6879272B2 (ja) 2018-03-22 2021-06-02 信越半導体株式会社 シリコンウェーハの製造方法
KR102104073B1 (ko) * 2018-09-06 2020-04-23 에스케이실트론 주식회사 웨이퍼의 마무리 연마 방법 및 장치
US11939491B2 (en) * 2019-03-27 2024-03-26 Fujimi Incorporated Method of polishing object to be polished containing material having silicon-silicon bond
JP6780800B1 (ja) 2020-04-09 2020-11-04 信越半導体株式会社 ウェーハの研磨方法及び研磨装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114526A (ja) * 1988-10-24 1990-04-26 Shin Etsu Handotai Co Ltd シリコンウエーハ及びその研磨方法並びにこのシリコンウエーハを用いた半導体電子装置
JP2001015460A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置の製造方法
DE10058305A1 (de) 2000-11-24 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Oberflächenpolitur von Siliciumscheiben
JPWO2003021651A1 (ja) * 2001-08-16 2004-12-24 旭化成ケミカルズ株式会社 金属膜用研磨液及びそれを用いた半導体基板の製造方法
JP2004193529A (ja) 2002-10-16 2004-07-08 Shin Etsu Handotai Co Ltd ウエーハの評価方法及び装置
JP4608856B2 (ja) 2003-07-24 2011-01-12 信越半導体株式会社 ウエーハの研磨方法

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