TWI414012B - Single crystal silicon wafer finishing grinding method and single crystal silicon wafer - Google Patents

Single crystal silicon wafer finishing grinding method and single crystal silicon wafer Download PDF

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Publication number
TWI414012B
TWI414012B TW097104274A TW97104274A TWI414012B TW I414012 B TWI414012 B TW I414012B TW 097104274 A TW097104274 A TW 097104274A TW 97104274 A TW97104274 A TW 97104274A TW I414012 B TWI414012 B TW I414012B
Authority
TW
Taiwan
Prior art keywords
polishing
single crystal
finishing
crystal germanium
wafer
Prior art date
Application number
TW097104274A
Other languages
English (en)
Chinese (zh)
Other versions
TW200849365A (en
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200849365A publication Critical patent/TW200849365A/zh
Application granted granted Critical
Publication of TWI414012B publication Critical patent/TWI414012B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW097104274A 2007-02-20 2008-02-04 Single crystal silicon wafer finishing grinding method and single crystal silicon wafer TWI414012B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007038937A JP4696086B2 (ja) 2007-02-20 2007-02-20 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ

Publications (2)

Publication Number Publication Date
TW200849365A TW200849365A (en) 2008-12-16
TWI414012B true TWI414012B (zh) 2013-11-01

Family

ID=39709802

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097104274A TWI414012B (zh) 2007-02-20 2008-02-04 Single crystal silicon wafer finishing grinding method and single crystal silicon wafer

Country Status (6)

Country Link
US (1) US8569148B2 (enExample)
JP (1) JP4696086B2 (enExample)
KR (1) KR101399343B1 (enExample)
DE (1) DE112008000396T5 (enExample)
TW (1) TWI414012B (enExample)
WO (1) WO2008102521A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI602643B (zh) * 2014-08-05 2017-10-21 Shin-Etsu Handotai Co Ltd Polished silicon wafer polishing method

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010131683A (ja) * 2008-12-02 2010-06-17 Sumco Corp シリコンウェーハの研磨方法
SG176631A1 (en) 2009-06-05 2012-01-30 Sumco Corp Method of polishing silicon wafer as well as silicon wafer
DE112010002718B4 (de) 2009-06-26 2019-11-21 Sumco Corp. Verfahren zur reinigung eines siliciumwafers sowie verfahren zur herstellung eines epitaktischen wafers unter verwendung des reinigungsverfahrens
JP5888280B2 (ja) 2013-04-18 2016-03-16 信越半導体株式会社 シリコンウエーハの研磨方法およびエピタキシャルウエーハの製造方法
JP6418174B2 (ja) * 2016-02-03 2018-11-07 株式会社Sumco シリコンウェーハの片面研磨方法
JP2018085411A (ja) * 2016-11-22 2018-05-31 株式会社ディスコ ウエーハの加工方法
US10636673B2 (en) 2017-09-28 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
JP6879272B2 (ja) 2018-03-22 2021-06-02 信越半導体株式会社 シリコンウェーハの製造方法
KR102104073B1 (ko) * 2018-09-06 2020-04-23 에스케이실트론 주식회사 웨이퍼의 마무리 연마 방법 및 장치
US11939491B2 (en) * 2019-03-27 2024-03-26 Fujimi Incorporated Method of polishing object to be polished containing material having silicon-silicon bond
JP6780800B1 (ja) 2020-04-09 2020-11-04 信越半導体株式会社 ウェーハの研磨方法及び研磨装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114526A (ja) * 1988-10-24 1990-04-26 Shin Etsu Handotai Co Ltd シリコンウエーハ及びその研磨方法並びにこのシリコンウエーハを用いた半導体電子装置
US6429134B1 (en) * 1999-06-30 2002-08-06 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US6530826B2 (en) * 2000-11-24 2003-03-11 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for the surface polishing of silicon wafers
US20050176250A1 (en) * 2001-08-16 2005-08-11 Hideaki Takahashi Polishig fluid for metallic films and method for producing semiconductor substrate using the same
US20060246724A1 (en) * 2003-07-24 2006-11-02 Naoyuki Takamatsu Method for polishing wafer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193529A (ja) 2002-10-16 2004-07-08 Shin Etsu Handotai Co Ltd ウエーハの評価方法及び装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114526A (ja) * 1988-10-24 1990-04-26 Shin Etsu Handotai Co Ltd シリコンウエーハ及びその研磨方法並びにこのシリコンウエーハを用いた半導体電子装置
US6429134B1 (en) * 1999-06-30 2002-08-06 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US6530826B2 (en) * 2000-11-24 2003-03-11 WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG Process for the surface polishing of silicon wafers
US20050176250A1 (en) * 2001-08-16 2005-08-11 Hideaki Takahashi Polishig fluid for metallic films and method for producing semiconductor substrate using the same
US20060246724A1 (en) * 2003-07-24 2006-11-02 Naoyuki Takamatsu Method for polishing wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI602643B (zh) * 2014-08-05 2017-10-21 Shin-Etsu Handotai Co Ltd Polished silicon wafer polishing method
US10043673B2 (en) 2014-08-05 2018-08-07 Shin-Etsu Handotai Co., Ltd. Final polishing method of silicon wafer and silicon wafer

Also Published As

Publication number Publication date
JP4696086B2 (ja) 2011-06-08
KR20090125058A (ko) 2009-12-03
DE112008000396T5 (de) 2010-01-07
WO2008102521A1 (ja) 2008-08-28
US20100090314A1 (en) 2010-04-15
TW200849365A (en) 2008-12-16
US8569148B2 (en) 2013-10-29
JP2008205147A (ja) 2008-09-04
KR101399343B1 (ko) 2014-05-27

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