CN108352333A - 半导体用粘接剂、半导体装置以及制造该半导体装置的方法 - Google Patents
半导体用粘接剂、半导体装置以及制造该半导体装置的方法 Download PDFInfo
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- CN108352333A CN108352333A CN201680062779.7A CN201680062779A CN108352333A CN 108352333 A CN108352333 A CN 108352333A CN 201680062779 A CN201680062779 A CN 201680062779A CN 108352333 A CN108352333 A CN 108352333A
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
公开了一种制造半导体装置的方法,半导体装置具备:半导体芯片;基板及/或另外的半导体芯片;以及介于它们之间的粘接剂层。该方法包括下述工序:通过将具有半导体芯片、基板、另外的半导体芯片或半导体晶片、以及粘接剂层的层叠体用暂时压接用按压构件夹持来进行加热以及加压,由此将基板、另外的半导体芯片或半导体晶片暂时压接在半导体芯片上;通过将层叠体用不同于暂时压接用按压构件的另外准备的正式压接用按压构件夹持来进行加热以及加压,由此将半导体芯片的连接部与基板或另外的半导体芯片的连接部进行连接。
Description
技术领域
本发明涉及半导体用粘接剂、半导体装置以及制造该半导体装置的方法。
背景技术
以往,在半导体芯片与基板的连接中广泛应用使用金丝等金属细线的引线接合方式,但为了应对针对半导体装置的高功能、高集成、高速化等要求,在半导体芯片或基板上形成被称为凸块(bump)的导电性突起、将半导体芯片与基板间直接连接的倒装片连接方式(FC连接方式)逐渐推广。
作为倒装片连接方式,已知使用钎料、锡、金、银、铜等使金属接合的方法、施加超声波振动使金属接合的方法、利用树脂的收缩力保持机械性接触的方法等,从连接部的可靠性的观点出发,使用钎料、锡、金、银、铜等使金属接合的方法是常用的。
例如在半导体芯片与基板间的连接中,BGA(Ball Grid Array,球栅阵列)、CSP(Chip Size Package,芯片尺寸封装)等中广泛使用的COB(Chip On Board,板上芯片)型的连接方式也属于倒装片连接方式。倒装片连接方式还广泛用于在半导体芯片上形成凸块或配线、在半导体芯片间进行连接的COC(Chip On Chip,叠层芯片)型的连接方式(例如参见专利文献1)。
在CPU、MPU等中使用的面阵型的半导体封装中,强烈要求高功能化。作为具体的要求,可以举出芯片的大型化、针脚(凸块、配线)数的增加、间距以及间隙的高密度化。
在强烈要求进一步的小型化、薄型化、高功能化的封装中,也开始广泛普及将上述的连接方式层叠、多段化而成的芯片堆栈型封装、POP(Package On Package,封装叠加)、TSV(Through-Silicon Via,硅通孔)等。由于通过配置成立体状而非平面状而使得封装可以变小,因此这些技术对于半导体的性能提高以及噪音降低、安装面积的削减、节电也是有效的,作为下一代半导体配线技术而受到关注。
从生产率提高的观点出发,在晶片上压接(连接)半导体芯片后制成单片来制作半导体封装的COW(Chip On Wafer,芯片晶片叠层)、在将晶片彼此压接(连接)后制成单片来制作半导体封装的WOW(Wafer On Wafer,晶片叠层)也受到关注。进而,从同样的观点出发,在晶片上或MAP(Mold Array Package)基板上使多个芯片对位后进行暂时压接、然后将这些多个芯片一次性进行正式压接来确保连接的群焊方式也受到关注。群焊方式也用于上述的TSV-PKG(TSV封装)等。
现有技术文献
专利文献
专利文献1:日本特开2008-294382号公报
发明内容
发明要解决的技术问题
作为上述的倒装片封装的组装方法,例如可以考虑以下的方法。首先,从切割后的晶片中用弹簧夹抓取被供给了半导体用粘接剂的半导体芯片,供至压接用按压构件。接着,在芯片-芯片间或芯片-基板间进行对位后将它们彼此暂时压接。然后,按照达到芯片-芯片间或芯片-基板间的连接部的熔点以上的方式使压接用按压构件的温度上升,在连接部形成金属结合,将芯片与芯片或芯片与基板彼此进行正式压接。通过以上,可获得一个倒装片封装。然后,将正式压接时变成了高温的压接用按压构件冷却后,再次用压接用按压构件抓取半导体芯片。在对半导体芯片供给了半导体用粘接剂时,压接用按压构件是吸附半导体芯片的与被供给了半导体用粘接剂的面(要进行连接的面)相反侧的面来将半导体芯片进行抓取。
由于从抓取到正式压接的循环中使用1个压接用按压构件,因此需要将压接用按压构件的温度上升到连接部金属发生熔融的高温或者下降到能够将供给了半导体用粘接剂的半导体芯片进行抓取的低温。但是,使压接用按压构件的温度变化要耗费时间,半导体装置的制造时间延长,因此生产率容易降低。
在加热到连接部金属的熔点以上以确保连接的倒装片连接方式中,正式压接后的压接用按压构件变成高温(如果连接部的金属为钎料的话例如为240℃以上)。在此,如果将压接用按压构件不冷却而将半导体芯片由弹簧夹进行抓取时,压接用按压构件的热会转印到弹簧夹上,弹簧夹自身的温度上升,因此抓取时会发生不良,生产率容易降低。而且,在被供给了半导体用粘接剂的半导体芯片中,压接用按压构件的热会转印到弹簧夹上,因弹簧夹的热,半导体用粘接剂的温度上升。由此,如果半导体用粘接剂的粘性表现出来,则半导体用粘接剂容易附着在弹簧夹上,生产率容易降低。进而,如果弹簧夹发生高温化,则在将由切割胶带制成单片的半导体芯片进行抓取时,热经由弹簧夹传递到切割胶带,抓取性降低,生产率容易降低。
一个方面的本发明的目的在于涉及包含将连接部彼此进行金属接合来连接的半导体装置的制造,使得生产率更高。
用于解决课题的手段
本发明的一个方面涉及制造半导体装置的方法,所述半导体装置具备:半导体芯片;基板及/或另外的半导体芯片;以及介于它们之间的粘接剂层,半导体芯片、基板、以及另外的半导体芯片各自具有带有由金属材料形成的表面的连接部,半导体芯片的连接部与基板及/或另外的半导体芯片的连接部通过金属接合而电连接。该方法依次具备下述工序:
通过将层叠体用相向的一对暂时压接用按压构件夹持来进行加热以及加压,由此将基板、另外的半导体芯片或半导体晶片暂时压接在半导体芯片上,所述层叠体具有:所述半导体芯片;所述基板、所述另外的半导体芯片或含有相当于所述另外的半导体芯片的部分的所述半导体晶片;以及配置在它们之间的粘接剂层,半导体芯片的连接部与基板或另外的半导体芯片的连接部相向配置,
通过将层叠体用不同于暂时压接用按压构件的另外准备的相向的一对正式压接用按压构件夹持来进行加热以及加压,由此将半导体芯片的连接部与基板或另外的半导体芯片的连接部通过金属接合来进行电连接。
所述一对暂时压接用按压构件中的至少一个在对层叠体进行加热以及加压时,被加热到比形成半导体芯片的连接部的表面的金属材料的熔点、以及形成基板或另外的半导体芯片的连接部的表面的金属材料的熔点低的温度。一对正式压接用按压构件中的至少一个在对层叠体进行加热以及加压时,被加热到形成半导体芯片的连接部的表面的金属材料的熔点、或者形成基板或另外的半导体芯片的连接部的表面的金属材料的熔点中的至少任一个的熔点以上的温度。
通过使用分别的压接用按压构件实施在比形成连接部的表面的金属材料的熔点低的温度下进行暂时压接的工序、和在形成连接部的表面的金属材料的熔点以上的温度下进行正式压接的工序,可以将分别的压接用按压构件的加热以及冷却所需的时间缩短。因此,可以在比使用1个压接用按压构件进行压接时更短的时间内生产率良好地制造半导体装置。其结果是,可以在短时间内制造多的高可靠性的半导体装置。
上述方法中,可以在维持正式压接用按压构件被加热到形成连接构件的表面的金属材料的熔点以上的温度的状态的同时反复进行暂时压接以及正式压接,从而连续地制造多个半导体装置。
暂时压接时,在使半导体芯片的连接部与基板或另外的半导体芯片的连接部彼此接触时,可以抑制正式压接工序时连接部金属的流动和飞散。
通过设为将到暂时压接为止的工序和正式压接工序用分别另外准备的2个压接用按压构件来进行,并将正式压接用的按压构件维持在高温的方式,可以缩短压接用按压构件的加热以及冷却时间,可以期待生产率的提高。
但是,这种方式与现有方式相比,由于正式压接工序时会对半导体用粘接剂迅速施加连接部金属的熔点以上的高温,因此促进半导体用粘接剂的固化,发生树脂的流动不足,由此有时压接时有卷入空孔残留、或因树脂挥发而产生空孔。进而,由于连接部的金属的熔融和树脂流动同时发生,因此有时发生连接部的金属的流动或飞散、以及因树脂捕集引起的连接不良。
于是,为了充分地抑制空孔的产生、获得连接可靠性方面更为优异的半导体装置,粘接剂层的熔融粘度可以在暂时压接用按压构件被加热的温度下为7000Pa·s以下。通过暂时压接工序时的粘接剂层的熔融粘度为7000Pa·s以下,可以更有效地抑制空孔产生以及因树脂捕集引起的连接不良。
从生产率提高的观点出发,由于压接用按压构件的温度的上下需要时间,因此可以将暂时压接和正式压接用分别的压接用按压构件进行。另外,在进行一次性连接时,正式压接与暂时压接相比要压接更多的多个半导体芯片,因此具有使用具备大面积压接头的压接用按压构件的倾向。在可以如此将多个半导体芯片一次性地进行正式压接而确保连接时,半导体装置的生产率提高。
在一次性地将多个半导体芯片进行正式压接时,需要大面积的压接头。但是,与组装以往的1个封装时使用的小的压接头(例如工具尺寸小于20mm左右)相比,压接多个封装的大面积的压接头(例如工具尺寸为20mm左右以上)即使在同等的平行度下,如果面积增大的话,封装间的高低差也会增大。因此,由于在将多个半导体芯片压接的一次性连接中压接头的面积增大,有时按压部容易产生凹凸(高低差),将多个半导体芯片压接制成封装时会产生连接不良。在半导体芯片厚度的薄型化、或封装的小型化、薄型化等不断发展的半导体封装中,更高地要求连接的精度。
于是,在将多个半导体芯片与多个基板、多个另外的半导体芯片或半导体晶片一次性地进行正式压接时,为了减少连接不良的半导体装置的比例,在将半导体芯片的连接部与基板或另外的半导体芯片的连接部通过金属接合进行电连接的工序中,可以将载物台上配置的多个层叠体与按照将它们覆盖的方式配置的一次性连接用片材用载物台和与载物台相向的压接头夹持,由此一次性地将多个层叠体进行加热以及加压。一次性连接用片材可以具有250℃下为10GPa以下的贮藏弹性模量和250℃下为40μm以上的位移量。这里的位移量是在将具有直径为8μm的圆形端面的棒状的按压用夹具按端面与一次性连接用片材的主面平行的朝向抵压在所述主面上的压缩试验中、在250℃的环境下、压缩负荷为100N时的位移量。
将多个半导体芯片(层叠体)进行压接时,通过使用250℃下贮藏弹性模量为10GPa以下、250℃下位移量为40μm以上的一次性连接用片材,可以充分吸收多个层叠体间的高低差以表现良好的平行度,将它们均匀地加压,因此可以对任一的半导体装置都确保良好的连接。
在用与半导体芯片同等或小数百μm的压接头压接一个半导体芯片时,半导体用粘接剂的胶瘤(fiilet,从芯片的边缘鼓出的部分)量增大,即使在按压半导体芯片的压接头方向上半导体用粘接剂向上爬,半导体用粘接剂也难以附着在压接头上。另一方面,在用大面积的压接头压接多个半导体芯片时,胶瘤量增大而向上爬时,压接头被半导体用粘接剂污染而需要洗涤等,因此有时生产率降低。根据上述制造半导体装置的方法,即使压接时从半导体芯片的边缘鼓出的粘接剂附着在一次性连接用片材上也容易替换,因此生产率不容易降低。
本发明的另一方面的方法中,在将半导体芯片的连接部与基板或另外的半导体芯片的连接部通过金属接合进行电连接的工序中,层叠体在加热炉内或加热板上被加热到形成半导体芯片的连接部的表面的金属材料的熔点、或者形成基板或另外的半导体芯片的连接部的表面的金属材料的熔点中至少任一个的熔点以上的温度。
在为该方法时也是,通过分别实施在比形成连接部的表面的金属材料的熔点低的温度下进行暂时压接工序和在形成连接部的表面的金属材料的熔点以上的温度下进行加热的工序,可以缩短暂时压接用按压构件的加热以及冷却所需的时间。因此,可以在比用1个压接用按压构件压接时更短的时间内生产率良好地制造半导体装置。其结果是,可以在短时间内制造多的高可靠性的半导体装置。
根据上述方法,可以将多个层叠体在加热炉内或加热板上一次性地进行加热。由此可以以更高的生产率制造半导体装置。上述方法中的粘接剂层可以是含有后述的[1]~[7]的半导体用粘接剂的层。
上述粘接剂层可以是通过含有具有10000以下的分子量的热固性树脂及其固化剂的热固性树脂组合物形成的层。即上述粘接剂层可以是含有该热固性树脂组合物的层。
上述热固性树脂组合物可以进一步含有具有10000以上的重均分子量的高分子成分。上述高分子成分的重均分子量还可以是30000以上。上述高分子成分的玻璃化转变温度可以为100℃以下。
上述粘接剂层还可以是通过预先准备好的粘接剂膜形成的层。
但是,对于例如在将晶片上或MAP基板上制成单片的芯片对位后多个进行暂时压接后(第一工序)、将多个芯片一次性地用大面积压接工具加热压接以确保连接(第二工序)的群焊方式、和同样地将晶片上或MAP基板上制成单片的芯片对位后多个进行暂时压接后(第一工序)、在回流炉或烘箱等可进行高温处理可能的槽内进行热处理以确保连接(第二工序)的方式,由于第二工序可以一次性地组装多个封装,因此可以预见到生产率提高。这些方式中,从高可靠性的观点出发,具有加热到金属的熔点以上而形成金属结合的倾向。
另外,在用压接工具对被供给了半导体用粘接剂的半导体芯片进行抓取时,如果在连接部的金属的熔点以上(例如为Sn/Ag钎料时为约220℃以上)的温度下进行抓取,则会发生因半导体用粘接剂的粘性表现而导致的抓取不良或因半导体用粘接剂的固化进行所导致的安装不良(因流动性不足导致的连接不良或空孔产生),因此需要将压接工具进行冷却。
通过分为第一工序(对位后进行暂时压接的工序)和第二工序(在连接部的金属的熔点以上的温度下进行热处理以确保连接的工序)来组装封装,可以省去工具冷却,生产率提高。
在第二工序中,从抑制胶瘤、抑制对连接部的损伤的观点出发,期待在低负荷或无负荷下、在回流炉或烘箱等可进行高温处理的槽内进行热处理以确保连接的方式。
第二工序由于是无负荷的,具有缺乏会影响确保连接以及抑制空孔的树脂流动(半导体用粘接剂的流动)的倾向。因此,在低温的第一工序中需要确保流动性。
第一工序中通过无空孔化而确保连接(接触),由此可以提高第二工序后的安装性(抑制空孔、确保连接)。
在可提高生产率的分为第一工序和第二工序进行组装的制造法中,在第一工序中半导体用粘接剂缺乏流动性而容易残留空孔,难以确保连接(接触)。如果第一工序中抑制空孔和连接(接触)的确保不充分,则第二工序后也有空孔残留,有可能连接不良。
本发明的又一个方面是为了解决上述技术课题而作出的,目的在于提供半导体用粘接剂、使用了其的半导体装置的制造方法以及半导体装置,所述半导体用粘接剂即使用于经过上述第一工序以及第二工序制造半导体装置的方法中,也可以抑制空孔并确保良好的连接(接触),而且也可以获得良好的耐回流性。
本发明的另一方面的主要目的是,通过在第一工序中确保充分的流动性以抑制空孔和确保连接(接触)、在第二工序中进行可预见高生产率的一次性地组装的方式(回流炉等的加热处理),可以确保高可靠性(抑制空孔、确保连接、耐回流性),从而提供下述[1]~[7]。
[1]一种半导体用粘接剂,其含有(a)具有低于10000的重均分子量的树脂成分、(b)固化剂、以及(c)下述通式(1)所示的硅烷醇化合物。
[化学式编号1]
R1-R2-Si(OH)3 (1)
[式中,R1表示烷基或苯基,R2表示亚烷基。]
[2][1]所述的半导体用粘接剂,其中,上述R1为苯基。
[3][1]或[2]所述的半导体用粘接剂,其中,上述(c)硅烷醇化合物在25℃下为固态。
[4][1]~[3]中任一项所述的半导体用粘接剂,其进一步含有(d)具有10000以上的重均分子量的高分子成分。
[5][4]所述的半导体用粘接剂,其中,上述(d)具有10000以上的重均分子量的高分子成分的重均分子量为30000以上、且玻璃化转变温度为100℃以下。
[6][1]~[5]中任一项所述的半导体用粘接剂,其为膜状。
[7][1]~[6]中任一项所述的半导体用粘接剂,其用于在经过下述第一工序和第二工序制造半导体装置时密封下述连接部,所述半导体装置是半导体芯片以及配线电路基板各自的连接部彼此电连接而成的半导体装置、或者是多个半导体芯片各自的连接部彼此电连接而成的半导体装置,所述第一工序是在比所述连接部的金属的熔点低的温度下进行压接的工序,所述第二工序是通过在所述连接部的金属的熔点以上的高温下进行加热处理来形成金属结合的工序。
发明效果
根据本发明的一个方面,涉及含有将连接部彼此通过金属接合进行连接的半导体装置的制造,可以实现更高的生产率。
附图说明
图1为表示将基板暂时压接在半导体芯片上的工序的一例的工序图。
图2为表示将半导体芯片的连接部与基板的连接部通过金属接合进行电连接的工序的一例的工序图。
图3为表示使用一次性连接用片材将半导体芯片的连接部与基板的连接部通过金属接合进行电连接的工序的一例的工序图。
图4为表示将半导体芯片的连接部与基板的连接部通过金属接合进行电连接的工序的一例的工序图。
图5为表示半导体装置的一个实施方式的示意截面图。
图6为表示半导体装置的另一实施方式的示意截面图。
图7为表示半导体装置的又一实施方式的示意截面图。
图8为表示半导体装置的再一实施方式的示意截面图。
具体实施方法
以下,根据情况参照附图对本发明的优选实施方式进行详细说明。但本发明并不限定于以下的实施方式。附图中,相同或相当部分赋予相同符号,有时省略重复的说明。上下左右等位置关系如果没有特别说明则基于附图所示的位置关系。附图的尺寸比率并不限定于图示的比率。本说明书中记载的数值范围的上限值以及下限值可以任意组合。实施例中记载的数值也可以作为数值范围的上限值或下限值使用。本说明书中,“(甲基)丙烯酸”是指丙烯酸或与其相对应的甲基丙烯酸。
<半导体装置的制造方法>
第一实施方式
图1为表示在本实施方式的半导体装置的制造方法中将基板暂时压接到半导体芯片上的工序的一例的工序图。
首先,如图1的(a)所示,将半导体芯片1与基板2于在它们之间配置有粘接剂层40的状态下重叠,形成层叠体3,所述半导体芯片1具有半导体芯片主体10和作为连接部的凸块30,所述基板2具有基板主体20和作为连接部的配线16。半导体芯片1在通过半导体晶片的切割而形成后被抓取并被搬送到基板2,按照作为连接部的凸块30与配线16相向配置的方式对位。层叠体3在具有相向配置的作为一对暂时压接用按压构件的压接头41以及载物台42的暂时压接用的按压装置43的载物台42上形成。凸块30设置在设于半导体芯片主体10上的配线15上。基板2的配线16设置在基板主体20上的规定位置上。凸块30以及配线16分别具有由金属材料形成的表面。
粘接剂层40可以是通过将预先准备的粘接剂膜粘贴在基板2上而形成的层。粘接剂膜可以通过加热压制、轧辊层压、真空层压等进行粘贴。粘接剂膜的供给面积以及厚度可以根据半导体芯片1或基板2的尺寸、连接部的高度等适当设定。粘接剂膜也可以粘贴在半导体芯片1上。还可以在将粘接剂膜粘贴在半导体晶片上之后,通过将半导体晶片切割而将半导体晶片制成单片,由此制作粘贴有粘接剂膜的半导体芯片1。
接着如图1的(b)所示,通过将层叠体3用作为暂时压接用按压构件的载物台42以及压接头41夹持来进行加热以及加压,由此将基板2暂时压接在半导体芯片1上。为图1的实施方式时,压接头41配置在层叠体3的半导体芯片1一侧,载物台42配置在层叠体3的基板2一侧。暂时压接可以按照半导体芯片1的连接部与基板2的连接部接触的方式进行。由此,容易在接下来的加热工序中形成连接部间的金属接合,同时可以减少粘接剂层在连接部间的咬入,连接性进一步提高。
载物台42以及压接头41中的至少一个在为了暂时压接而对层叠体3进行加热以及加压时,被加热到比形成半导体芯片1的作为连接部的凸块30的表面的金属材料的熔点、以及形成基板2的作为连接部的配线16的表面的金属材料的熔点低的温度。
在将基板2暂时压接到半导体芯片1上的工序中,为了将半导体芯片进行抓取时热不转印到半导体芯片等上,优选暂时压接用按压构件为低温。在为了暂时压接而加热以及加压时,为了排除卷入时的空孔,暂时压接用按压构件也可以被加热到粘接剂层的流动性提高的程度的高温。为了缩短冷却时间,可以减小将半导体芯片进行抓取时的按压构件的温度与进行暂时压接时的按压构件的温度之差。该温度差可以为100℃以下或60℃以下。该温度差还可以恒定。温度差为100℃以下时,具有暂时压接用按压构件的冷却所需的时间缩短、生产率进一步提高的倾向。
暂时压接用按压构件的温度还可以低于粘接剂层的反应开始温度。反应开始温度是指使用DSC(PerkinElmer公司制、DSC-Pyirs1)、在样品量为10mg、升温速度为10℃/分钟、测定环境气体为空气或氮气的条件下、测定粘接剂层的反应所产生的散热时的On-set温度。
从以上的观点出发,载物台42及/或压接头41的温度在对半导体芯片进行抓取的期间例如可以为30℃以上且130℃以下、在为了暂时压接而对层叠体3进行加热以及加压的期间例如可以为50℃以上且150℃以下。
在为了暂时压接而加热暂时压接用按压构件的温度T(对层叠体进行加热以及加压的期间的暂时压接用按压构件的温度)下,粘接剂层的熔融粘度可以为7000Pa·s以下。这里的“熔融粘度”是指利用流变仪(株式会社AntonPaar Japan制、MCR301)、在样品厚度为400μm、升温速度为10℃/分钟、频率为1Hz的条件下使用测定夹具(一次性板(直径为8mm)以及一次性样品盘)测定时的温度T下的熔融状态的粘接剂层的粘度。
为了暂时压接而加热暂时压接用按压构件的温度T可以是粘接剂层的反应开始温度以下且粘接剂层的粘度最低、树脂容易流动的温度。但是,粘度过低时,有时树脂爬到芯片侧面而附着到压接用按压构件上,生产率降低。因此,在暂时压接的工序中,粘接剂层的熔融粘度还可以在为了暂时压接而加热暂时压接用按压构件的温度T下为1000Pa·s以上。
用于暂时压接的负荷从排除半导体芯片间或半导体芯片-基板间的空孔、使各自的连接部彼此充分接触的观点出发,例如可以是半导体芯片的每1针脚(1凸块)为0.009~0.2N。
图2为表示将半导体芯片的连接部与基板的连接部通过金属接合进行电连接的正式压接的工序的一例的工序图。
如图2的(a)以及(b)所示,使用不同于按压装置43的另外准备的、具有作为正式压接用按压构件的载物台45以及压接头44的正式压接用的按压装置46,对层叠体3进一步进行加热以及加压。通过将层叠体3用载物台45以及压接头44夹持来进行加热以及加压,由此将凸块30与配线16通过金属接合进行电连接。从而对半导体芯片1和基板2进行正式压接。为图2的实施方式时,压接头44配置在层叠体3的半导体芯片1一侧、载物台45配置在层叠体3的基板2一侧。
载物台45或压接头44中的至少一个在对层叠体3进行加热以及加压时、被加热到形成半导体芯片1的作为连接部的凸块30的表面的金属材料的熔点、或形成基板2的作为连接部的配线16的表面的金属材料的熔点中至少任一个的熔点以上的温度。该加热温度(正式压接中载物台45及/或压接头44的温度)在连接部的金属材料含有钎料时可以为230℃以上或250℃以上、可以为330℃以下或300℃以下。加热温度为230℃以上或250℃以上时,连接部的钎料熔融,容易形成充分的金属结合。加热温度为330℃以下或300℃以下时,不容易产生空孔,可以进一步抑制钎料的飞散。正式压接中的温度从省去冷却时间、提高生产率的观点出发,可以在正式压接的工序中是恒定的。
载物台45及/或压接头44的温度可以在重复进行对多个层叠体3依次加热以及加压以连续地制造多个半导体装置的期间被维持在一定以上的温度。换而言之,可以在将载物台45及/或压接头44维持在一定以上的同时依次放入层叠体3、多次连续地进行正式压接。通过将装置维持在一定范围的温度,可以不需要冷却时间,生产率进一步提高。载物台45及/或压接头44的温度在外部气体以及接触于半导体芯片时热逃散而有细微变动,但只要变动的范围为±10℃以下则其有变动也没有问题。
载物台45及/或压接头44的温度在对层叠体进行加热以及加压时还可以是高于粘接剂层的反应开始温度的温度。通过促进正式压接中粘接剂层的固化,具有抑制空孔以及连接性进一步提高的倾向。
暂时压接用按压构件以及正式压接用按压构件可以在2个以上的分别的装置内分别设置,也可以在1个装置内一起设置。可以使用具备暂时压接用按压构件以及正式压接用按压构件的双头型装置。
图1以及图2的实施方式中示出了将半导体芯片和基板进行压接的工序的例子,但制造半导体装置的方法还可以含有将半导体芯片彼此互相压接的工序。还可以代替半导体芯片1而使用含有相当于半导体芯片1的多个部分的切割前的半导体晶片。在将半导体芯片彼此加热到凸块的熔点以上的温度的同时进行按压以将半导体芯片间进行连接,同时利用粘接剂膜将半导体芯片间的空隙填充以密封连接部。连接部的金属材料含有钎料时,可以按照连接部(钎料部分)的温度达到230℃以上或250℃以上的方式加热半导体芯片。连接负荷虽然依赖于凸块数,但可以考虑凸块的高度不均吸收、以及凸块变形量的控制来设定。连接时间从生产率提高的观点出发,可以设定为短时间。可以在使钎料熔融并除去氧化膜以及表面的杂质的同时,在连接部形成金属接合。
暂时压接所花费的压接时间以及正式压接所花费的连接时间(压接时间)从生产率提高的观点出发,可以设定为短时间。短时间的连接时间(压接时间)是指连接形成(正式压接)中连接部被加热到230℃以上的时间(例如钎料使用时的时间)为5秒以下。连接时间还可以是4秒以下或3秒以下。各压接时间是短于冷却时间的时间时,可以进一步体现出本发明的制造方法的效果。
作为暂时压接用或正式压接用的按压装置,可以使用倒装片接合器、加压烘箱等。
暂时压接以及正式压接中,还可以压接多个芯片。例如在平面地压接多个芯片的群焊中,可以将多个半导体芯片一个个地暂时压接在晶片或MAP基板上,之后一次性地对多个芯片进行正式压接。
在TSV结构的封装中多见的堆栈压接中,立体地将多个芯片进行压接。此时也可以将多个半导体芯片一个个地重叠进行暂时压接,之后一次性地将多个芯片进行正式压接。
第二实施方式
第二实施方式的半导体装置的制造方法也具备将半导体芯片与基板或另外的半导体芯片暂时固定而获得层叠体后、利用具备载物台和压接头的正式压接用按压构件进行正式压接的工序。将半导体芯片与基板或另外的半导体芯片暂时固定而获得层叠体的工序可以是与第一实施方式的暂时压接同样的方式。第二实施方式在如下方面与第一实施方式不同:通过将载物台上配置的多个层叠体和按照将它们覆盖的方式配置的一次性连接用片材用载物台和与载物台相向的压接头夹持来一次性地对多个层叠体进行加热以及加压以进行正式压接,除此以外与第一实施方式相同。图3为表示使用一次性连接用片材将半导体芯片的连接部与基板的连接部通过金属接合进行电连接的正式压接的工序的一例的工序图。还可以将具有半导体晶片和多个半导体芯片的层叠体配置在载物台上,将它们用一次性连接用片材覆盖。
如图3的(a)以及(b)所示,使用不同于暂时压接用的按压装置43的另外准备的、具有作为正式压接用按压构件的载物台45以及压接头44的正式压接用的按压装置46,对层叠体3进一步进行加热以及加压。在载物台45上排列多个层叠体3,按照将层叠体3覆盖的方式配置一次性连接用片材47。然后,将一次性连接用片材47和多个层叠体3一起用载物台45以及压接头44夹持来一次性地对多个层叠体进行加热以及加压,由此将凸块30和配线16通过金属接合进行电连接。为图3的实施方式时,压接头44配置在层叠体3的半导体芯片1一侧、载物台45配置在层叠体3的基板2一侧。
压接头44与半导体芯片接触的面的面积从一次性地压接更多的半导体芯片以提高半导体装置的生产率的观点出发,可以为50mm×50mm以上。压接头44与半导体芯片接触的面的面积从可以对应12英寸尺寸的晶片的观点出发,可以为330mm×330mm左右。
<一次性连接用片材>
一次性连接用片材的原料只要是显示250℃下特定的贮藏弹性模量和位移量的树脂,则没有特别限定。作为树脂,例如可以举出聚四氟乙烯树脂、聚酰亚胺树脂、苯氧基树脂、环氧树脂、聚酰胺树脂、聚碳二酰亚胺树脂、氰酸酯酯树脂、丙烯酸树脂、聚酯树脂、聚乙烯树脂、聚醚砜树脂、聚醚酰亚胺树脂、聚乙烯缩丁醛树脂、聚氨酯树脂、以及丙烯酸橡胶。一次性连接用片材从耐热性以及膜形成性优异的观点出发,可以是含有选自聚四氟乙烯树脂、聚酰亚胺树脂、环氧树脂、苯氧基树脂、丙烯酸树脂、丙烯酸橡胶、氰酸酯酯树脂、以及聚碳二酰亚胺树脂中的至少1种树脂的片材。一次性连接用片材的树脂从耐热性以及膜形成性特别优异的观点出发,可以是含有选自聚四氟乙烯树脂、聚酰亚胺树脂、苯氧基树脂、丙烯酸树脂以及丙烯酸橡胶中的至少1种树脂的片材。这些树脂可以单独使用1种或组合使用2种以上。
250℃下一次性连接用片材的贮藏弹性模量低时,具有使用具有大面积的压接头按压半导体芯片时容易确保良好的连接的倾向。因此,250℃下一次性连接用片材的贮藏弹性模量例如可以为10GPa以下或8GPa以下。250℃下一次性连接用片材的贮藏弹性模量高时,具有因一次性连接用片材具有适当柔软性而进一步吸收多个层叠体间的高低差而体现良好的平行度、可以更均匀地对这些层叠体进行加压的倾向。因此,250℃下一次性连接用片材的贮藏弹性模量可以为0.01GPa以上或0.1GPa以上。250℃下的贮藏弹性模量可以使用通常的弹性模量测定装置进行测定。例如可以使用弹性模量测定装置RSA2(RheometricScientific公司制)等、在频率为10Hz、在升温速度5℃/分钟下从-30℃升温至300℃的同时测定样品的粘弹性、由其测定结果求出250℃下的贮藏弹性模量。
一次性连接用片材可以250℃下的贮藏弹性模量满足上述范围、且进一步显示250℃下充分的位移量、例如40μm以上。该位移量为40μm以上时,在一次性地对多个半导体芯片进行正式压接时可以确保特别良好的连接。250℃下的位移量可以为200μm以下。本说明书中,位移量是指在将具有直径为8μm的圆形端面的棒状的按压用夹具按主面与端面平行的朝向抵压在一次性连接片材的主面上的压缩试验中、在250℃的环境下、压缩负荷为100N时的位移量。位移量例如可以使用电气机械式万能试验机(INSTRON公司制)进行测定。
一次性连接用片材可以耐热性高。从提高半导体装置的生产率的观点出发,一次性连接用片材可以是在250℃以上的温度下压接时不发生熔融、不会附着于半导体芯片上的片材。
一次性连接用片材从被一次性连接用片材覆盖的半导体芯片或基板上的定位标记(用于对位的识别用标记)可以被正式压接用按压构件识别的观点出发,可以具有高透明性。一次性连接用片材的波长550nm下的透射率例如可以为10%以上。
一次性连接用片材的厚度可以按照满足上述性质的方式适当设计。厚度例如可以为50μm以上、80μm以上或100μm以上。一次性连接用片材的厚度可以为300μm以下。
一次性连接用片材还可以是市售的弹性体片材。作为市售的弹性体片材,可以举出NITOFLON 900UL(日东电工公司制)、UPILEX SGA(宇部兴产公司制)等。
通过使用具有上述特定的贮藏弹性模量以及位移量的一次性连接用片材,可以充分地吸收多个层叠体间的高低差以体现良好的平行度,可以将它们均匀地加压,因此对任一的半导体装置都可以确保进一步良好的连接。另外,由于即使压接时从半导体芯片的边缘鼓出的粘接剂附着到一次性连接用片材上也可以容易地替换,因此生产率不易降低。
第三实施方式
第三实施方式的半导体装置的制造方法中,接着与第一实施方式相同的暂时压接后,如图4所示,将暂时压接后的层叠体3在加热炉60内进行加热,由此将半导体芯片1的凸块30与基板2的配线16通过金属接合进行电连接。第三实施方式的方法在除此以外的方面与第一实施方式相同。可以在1个加热炉60内对多个层叠体进行加热,一次性地进行多个层叠体中的连接。
加热炉60内的气体在对层叠体进行加热时、被加热到形成半导体芯片1的连接部的表面的金属材料的熔点、或形成基板2的连接部的表面的金属材料的熔点中至少任一个的熔点以上的温度。
加热炉60内的气体的温度在加热层叠体的期间、在连接部的金属材料含有钎料时可以是230℃以上且330℃以下。加热炉60内的气体的温度为230℃以上时,连接部的钎料熔融,容易形成充分的金属结合。加热炉60内的气体的温度为330℃以下时,不易产生空孔,可以进一步抑制钎料的飞散。加热炉60内的压力没有特别限制,可以是大气压。
加热炉60内的气体的温度在加热层叠体的期间可以是高于粘接剂层的反应开始温度的温度。通过加热工序中促进粘接剂层的固化,可以进一步提高抑制空孔以及连接性。
加热炉60内,可以在层叠体上放置重物或将层叠体用夹子固定等的状态下加热层叠体。由此,可以进一步抑制由于半导体芯片与基板之间、以及半导体芯片与粘接剂层之间的热膨胀差所产生的翘曲以及连接不良。
作为加热炉,可以使用回流炉、烘箱等。或者也可以将层叠体在加热板上进行加热。此时,加热板的温度可以设定为与加热炉内的空气同样的温度。
将连接部进行连接的工序(加热工序)不仅形成金属结合,而且还促进粘接剂层的固化。使用压接用按压构件进行连接时,压接用按压构件的热难以传递到压接时的边缘鼓出到芯片侧面的粘接剂即胶瘤上。因此,为了使连接后胶瘤部分等的固化进一步充分,需要进一步的加热处理工序。但是,在不使用压接用按压构件而使用对层叠体的全体施加热的回流炉、烘箱、加热板等时,可以缩短或省去连接后的加热处理。
<半导体装置>
对通过本实施方式的半导体装置的制造方法获得的半导体装置进行说明。本实施方式的半导体装置中的连接部可以是凸块与配线的金属接合、以及凸块与凸块的金属接合中的任一种。本实施方式的半导体装置中,例如可以使用介由粘接剂层获得电连接的倒装片连接。
图5为表示半导体装置的一个实施方式(半导体芯片以及基板的COB型的连接方式)的示意截面图。图5的(a)所示的半导体装置100具备半导体芯片1、基板(配线电路基板)2、以及介于它们之间的粘接剂层40。为半导体装置100时,半导体芯片1具有半导体芯片主体10、配置在半导体芯片主体10的基板2一侧的面上的配线15、以及配置在配线15上的作为连接部的凸块30。基板2具有基板主体20和配置在基板主体20的半导体芯片1一侧的面上的作为连接部的配线16。半导体芯片1的凸块30与基板2的配线16通过金属接合而电连接。半导体芯片1以及基板2通过配线16以及凸块30而进行倒装片连接。配线15、16以及凸块30通过被粘接剂层40密封,与外部环境隔绝。
图5的(b)所示的半导体装置200具备半导体芯片1、基板2、以及介于它们之间的粘接剂层40。为半导体装置200时,半导体芯片1具有配置在半导体芯片1的基板2一侧的面上的凸块32作为连接部。基板2具有配置在基板2的半导体芯片1一侧的面的凸块33作为连接部。半导体芯片1的凸块32与基板2的凸块33通过金属接合而电连接。半导体芯片1以及基板2通过凸块32、33而进行倒装片连接。凸块32、33通过被粘接剂层40密封,与外部环境隔绝。
图6为半导体装置的另一实施方式(半导体芯片彼此的COC型的连接方式)的示意截面图。图6的(a)所示的半导体装置300的构成除了2个半导体芯片1介由配线15以及凸块30进行倒装片连接的方面之外,与半导体装置100相同。图6的(b)所示的半导体装置400的构成除了2个半导体芯片1介由凸块32进行倒装片连接的方面之外,与半导体装置200相同。
图5以及6中,配线15、凸块32等连接部可以是称为垫片的金属膜(例如金镀层),还可以是接线柱电极(例如铜柱)。例如在图6的(b)中一个半导体芯片具有铜柱以及连接凸块(钎料:锡-银)作为连接部、另一个半导体芯片具有金镀层作为连接部的方式中,连接部如果达到连接部的金属材料中熔点最低的钎料的熔点以上的温度,则钎料熔融而在连接部间形成金属接合,使得连接部间的电连接成为可能。
作为半导体芯片主体10,没有特别限制,可以使用由硅、锗等同种元素构成的元素半导体、镓砷、铟磷等化合物半导体等各种半导体。
作为基板2,只要是配线电路基板则没有特别限制,可以使用将在以玻璃环氧、聚酰亚胺、聚酯、陶瓷、环氧、双马来酰亚胺三嗪等为主成分的绝缘基板的表面上形成的金属层的不要的地方蚀刻除去而形成了配线(配线图案)的电路基板、在上述绝缘基板的表面通过金属镀覆等形成了配线(配线图案)的电路基板、在上述绝缘基板的表面上印刷导电性物质而形成了配线(配线图案)的电路基板等。
作为配线15以及16、凸块30、凸块32以及33(导电性突起)等连接部的材质,作为主成分可以使用金、银、铜、钎料(主成分例如为锡-银、锡-铅、锡-铋、锡-铜、锡-银-铜)、锡、镍等,可以仅由单一的成分构成,也可以由多个成分构成。连接部还可以具有这些金属层叠而成的结构。金属材料中铜、钎料比较廉价。从连接可靠性的提高以及翘曲抑制的观点出发,连接部可以含有钎料。
作为垫片的材质,作为主成分可以使用金、银、铜、钎料(主成分例如为锡-银、锡-铅、锡-铋、锡-铜、锡-银-铜)、锡、镍等,可以仅由单一的成分构成,也可以由多个成分构成。垫片还可以具有这些金属层叠而成的结构。从连接可靠性的观点出发,垫片可以含有金及/或钎料。
在配线15、16(配线图案)的表面上可以形成有以金、银、铜、钎料(主成分例如为锡-银、锡-铅、锡-铋、锡-铜)、锡、镍等为主成分的金属层。该金属层可以仅由单一的成分构成,也可以由多个成分构成。金属层还可以具有多个金属层层叠而成的结构。金属层可以含有比较廉价的铜及/或钎料。从连接可靠性的提高以及翘曲抑制的观点出发,金属层可以含有钎料。
可以层叠图5或图6所示的半导体装置(封装),通过金、银、铜、钎料(主成分例如为锡-银、锡-铅、锡-铋、锡-铜、锡-银-铜)、锡、镍等进行电连接。用于连接的金属可以是比较廉价的铜及/或钎料。例如还可以如TSV技术中所见的那样,使粘接剂层介于半导体芯片间进行倒装片连接或层叠,形成贯穿半导体芯片的孔而与图案面的电极相连。
图7为表示半导体装置的又一实施方式(半导体芯片层叠型的方式(TSV))的示意截面图。图7所示的半导体装置500中,通过在作为基板的插入器(Interposer)主体50上形成的配线15与半导体芯片1的凸块30连接,半导体芯片1与插入器5进行倒装片连接。在半导体芯片1与插入器5之间存在有粘接剂层40。在上述半导体芯片1中与插入器5相反侧的表面上,隔着配线15、凸块30以及粘接剂层40反复层叠半导体芯片1。半导体芯片1的表背面上的图案面的配线15通过贯穿半导体芯片主体10的内部的孔内填充的贯穿电极34而相互连接。作为贯穿电极34的材质,可以使用铜、铝等。
通过这样的TSV技术,从通常不使用的半导体芯片的背面也可以获取信号。进而,由于贯穿电极34垂直地在半导体芯片1内通过,因此可以缩短相向的半导体芯片1之间、以及半导体芯片1与插入器5之间的距离,可以进行柔软的连接。本实施方式的粘接剂层可以在这样的TSV技术中作为相向的半导体芯片1之间、以及半导体芯片1以及插入器5之间的密封材料进行应用。
在区域凸块芯片技术等自由度高的凸块形成方法中,可以不介由插入器而直接将半导体芯片安装在主板上。本实施方式的粘接剂层也可以应用在这样的将半导体芯片直接安装在主板上的情况中。本实施方式的粘接剂层在将2个配线电路基板进行层叠时、在对基板间的空隙进行密封或填充时也可以应用。
<热固性树脂组合物>
粘接剂层例如可以是由含有具有10000以下的分子量的热固性树脂及其固化剂的热固性树脂组合物形成的层。换而言之,粘接剂层可以是含有包含具有10000以下的分子量的热固性树脂及其固化剂的热固性树脂组合物的层。
(a)热固性树脂
热固性树脂是可通过加热形成交联结构的化合物。热固性树脂可以具有10000以下的分子量。热固性树脂组合物通过含有与固化剂反应而形成交联结构的化合物(热固性树脂),可以抑制分子量小的成分在加热时发生分解等而产生空孔,因此从耐热性的方面出发是有利的。作为热固性树脂,可以举出环氧树脂、丙烯酸树脂等。
热固性树脂的重均分子量从耐热性、流动性的观点出发,可以是100~9000或300~7000。热固性树脂的重均分子量的测定方法与后述的(d)高分子成分的重均分子量的测定方法相同。
(a1)丙烯酸树脂
丙烯酸树脂是分子内具有1个以上(甲基)丙烯酰基的化合物。作为丙烯酸树脂,例如可举出具有来自于选自双酚A、双酚F、萘、苯酚酚醛清漆、甲酚酚醛清漆、苯酚芳烷基酯、联苯、三苯基甲烷、二环戊二烯、芴、金刚烷以及异氰脲酸中的化合物的骨架以及(甲基)丙烯酰氧基的(甲基)丙烯酸酯、以及各种多官能(甲基)丙烯氧化合物。从耐热性的观点出发,丙烯酸树脂可以选自具有来自于双酚A、双酚F、萘、芴、金刚烷以及异氰脲酸中的化合物的骨架的(甲基)丙烯酸酯。丙烯酸树脂可以单独使用1种或组合使用2种以上。
丙烯酸树脂的含量相对于热固性树脂组合物的总量100质量份可以是10~50质量份或15~40质量份。丙烯酸树脂的含量为10质量%以上时,固化成分充分存在,因此容易控制热固性树脂组合物的固化后的流动。丙烯酸树脂的含量为50质量%以下时,可以进一步抑制固化物变得过硬所导致的封装的翘曲。
丙烯酸树脂在室温(25℃)下可以是固态。固态的丙烯酸树脂从难以产生空孔的方面、以及固化前(B阶段)的热固性树脂组合物的粘性(粘附)小而操作性优异的方面出发,与液态相比更有利。作为室温(25℃)下为固态的丙烯酸树脂,例如可以举出具有来自于选自双酚A、芴、金刚烷以及异氰脲酸中的化合物的骨架的(甲基)丙烯酸酯。
丙烯酸树脂中(甲基)丙烯酰基的数(官能团数)可以为3以下。官能团数为3以下时,热固性树脂组合物在短时间内即可充分固化,因此可以进一步抑制固化反应率的降低。固化反应率低时,未反应基会残留。
(a2)环氧树脂
环氧树脂是分子内具有2个以上环氧基的化合物。作为环氧树脂,例如可以举出双酚A型、双酚F型、萘型、苯酚酚醛清漆型、甲酚酚醛清漆型、苯酚芳烷基酯型、联苯型、三苯基甲烷型以及二环戊二烯型环氧树脂、以及各种多官能环氧树脂。从耐热性、操作性的观点出发,环氧树脂可以选自双酚F型、苯酚酚醛清漆型、甲酚酚醛清漆型、联苯型、以及三苯基甲烷型环氧树脂。从速固化性以及耐热性的观点出发,环氧树脂可以选自双酚F型以及三苯基甲烷型环氧树脂。环氧树脂可以单独使用1种或组合使用2种以上。
环氧树脂的含量相对于热固性树脂组合物的总量100质量份可以为10~50质量份。环氧树脂的含量为10质量份以上时,由于固化成分充分存在,因此易于控制热固性树脂组合物的固化后的流动。环氧树脂的含量为50质量份以下时,可以进一步抑制固化物过硬所导致的封装的翘曲。
(b)固化剂
固化剂是与热固性树脂反应、与热固性树脂一起形成交联结构的化合物。作为固化剂,例如可以举出酚醛树脂系固化剂、酸酐系固化剂、胺系固化剂、咪唑系固化剂、膦系固化剂、偶氮化合物以及有机过氧化物。固化反应(固化体系)可以是自由基聚合(自由基聚合体系)。固化剂可以单独使用1种或组合使用2种以上。酚醛树脂系固化剂、酸酐系固化剂以及胺系固化剂可以制成分别单独1种或分别2种以上的混合物进行使用。咪唑系固化剂以及膦系固化剂可以分别单独使用,还可以与酚醛树脂系固化剂、酸酐系固化剂或胺系固化剂一起使用。
热固性树脂与固化剂的组合只要固化进行则没有特别限制。与丙烯酸树脂组合的固化剂从操作性以及保存稳定性的观点出发,可以是有机过氧化物。与环氧树脂组合的固化剂从操作性、保存稳定性以及固化性优异的观点出发,可以选自酚醛树脂系固化剂与咪唑系固化剂、酸酐系固化剂与咪唑系固化剂、胺系固化剂与咪唑系固化剂、以及单独的咪唑系固化剂。从短时间内固化则生产率提高的方面出发,可以单独使用速固化性以及保存稳定性优异的咪唑系固化剂。如果热固性树脂组合物在短时间内固化,则可以减少低分子成分等挥发成分的量,因此可以进一步抑制空孔的产生。与丙烯酸树脂组合的固化剂从操作性、保存稳定性的观点出发,可以是有机过氧化物或偶氮化合物。
(b1)酚醛树脂系固化剂
酚醛树脂系固化剂在分子内具有2个以上的酚性羟基。作为酚醛树脂系固化剂,例如可以举出苯酚酚醛清漆、甲酚酚醛清漆、苯酚芳烷基酯树脂、甲酚萘醇甲醛缩聚物、三苯基甲烷型多官能苯酚以及各种多官能酚醛树脂。它们可以单独使用1种或组合使用2种以上。
酚醛树脂系固化剂相对于环氧树脂的当量比(酚性羟基/环氧基、摩尔比)从固化性、粘接性以及保存稳定性优异的观点出发,可以为0.3~1.5、0.4~1.0、或0.5~1.0。该当量比为0.3以上时,具有固化性提高、粘接力进一步提高的倾向。该当量比为1.5以下时,有未反应的酚性羟基不会过剩地残留、将吸水率抑制得较低、绝缘可靠性进一步提高的倾向。
(b2)酸酐系固化剂
作为酸酐系固化剂,例如可以举出甲基环己烷四羧酸二酐、偏苯三酸酐、均苯四酸酐、二苯甲酮四羧酸二酐以及乙二醇二脱水偏苯三酸酯。它们可以单独使用1种或组合使用2种以上。
酸酐系固化剂相对于环氧树脂的当量比(酸酐基/环氧基、摩尔比)从固化性、粘接性以及保存稳定性优异的观点出发,可以为0.3~1.5、0.4~1.0、或0.5~1.0。该当量比为0.3以上时,具有固化性提高、粘接力进一步提高的倾向。该当量比为1.5以下时,有未反应的酸酐不易过剩地残留、将吸水率抑制得较低、绝缘可靠性进一步提高的倾向。
(b3)胺系固化剂
作为胺系固化剂,例如可以举出双氰胺、十二烷二胺等。它们可以单独使用1种或组合使用2种以上。
胺系固化剂相对于环氧树脂的当量比(氨基的活性氢数/环氧基、摩尔比)从固化性、粘接性以及保存稳定性优异的观点出发,可以为0.3~1.5、0.4~1.0、或0.5~1.0。该当量比为0.3以上时,具有固化性提高、粘接力进一步提高的倾向。该当量比为1.5以下时,有未反应的胺不易过剩地残留、因而绝缘可靠性提高的倾向。
(b4)咪唑系固化剂
作为咪唑系固化剂,例如可以举出2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑、1-氰基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑偏苯三酸酯、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯、2,4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二氨基-6-[2’-十一烷基咪唑基-(1’)]-乙基-s-三嗪、2,4-二氨基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪异氰脲酸加成体、2-苯基咪唑异氰脲酸加成体、2-苯基-4,5-二羟基甲基咪唑、2-苯基-4-甲基-5-羟基甲基咪唑、以及环氧树脂与咪唑类的加成体。从固化性、保存稳定性以及连接可靠性优异的观点出发,咪唑系固化剂可以选自1-氰基乙基-2-十一烷基咪唑、1-氰基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑偏苯三酸酯、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯、2,4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二氨基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪异氰脲酸加成体、2-苯基咪唑异氰脲酸加成体、2-苯基-4,5-二羟基甲基咪唑以及2-苯基-4-甲基-5-羟基甲基咪唑。它们可以单独使用1种或组合使用2种以上。另外,还可以将它们制成微胶囊后作为潜在性固化剂使用。
咪唑系固化剂的含量相对于环氧树脂100质量份可以为0.1~20质量份或0.1~10质量份。该含量为0.1质量份以上时,具有固化性提高的倾向。该含量为20质量份以下时,具有在形成金属接合前热固性树脂组合物不易固化、因而难以发生连接不良的倾向。
(b5)膦系固化剂
作为膦系固化剂,例如可以举出三苯基膦、四苯基鏻四苯基硼酸酯、四苯基鏻四(4-甲基苯基)硼酸酯以及四苯基鏻(4-氟苯基)硼酸酯。它们可以单独使用1种或组合使用2种以上。
膦系固化剂的含量相对于环氧树脂100质量份可以为0.1~10质量份或0.1~5质量份。该含量为0.1质量份以上时,具有固化性提高的倾向。该含量为10质量份以下时,具有在形成金属接合前热固性树脂组合物不易固化、因而难以发生连接不良的倾向。
(b6)偶氮化合物
作为偶氮化合物,例如可以举出二甲基氨基偶氮苯、二甲基氨基偶氮苯-羧酸、二乙基氨基偶氮苯、以及二乙基氨基偶氮苯-羧酸。偶氮化合物可以单独使用1种或组合使用2种以上。
偶氮化合物的含量相对于丙烯酸树脂100质量份可以为0.5~10质量份或1~5质量份。该含量为0.5质量%以上时,具有固化性提高的倾向。该含量为10质量份以下时,具有在形成金属接合前热固性树脂组合物不易固化、因而难以发生连接不良的倾向。
(b7)有机过氧化物
作为有机过氧化物,例如可以举出过氧化酮、过氧化缩酮、过氧化氢、二烷基过氧化物、二酰基过氧化物、过氧化二碳酸酯、过氧化酯等。有机过氧化物从保存稳定性的观点出发,可以是选自过氧化氢、二烷基过氧化物以及过氧化酯中的1种以上。有机过氧化物从耐热性的观点出发,可以是选自过氧化氢以及二烷基过氧化物中的1种以上。它们可以单独使用1种或组合使用2种以上。
有机过氧化物的含量相对于丙烯酸树脂100质量份优选为0.5~10质量份、更优选为1~5质量份。该含量为0.5质量%以上时,具有固化性提高的倾向。该含量为10质量份以下时,具有在形成金属接合前热固性树脂组合物不易固化、因而难以发生连接不良的倾向。另外,该含量适度地少时,具有不易发生因固化剧烈进行、反应点增多而分子链变短或未反应基残留所引起的可靠性的降低的倾向。
(c)高分子成分
本实施方式的热固性树脂组合物可以进一步含有具有10000以上的重均分子量的高分子成分。热固性树脂、固化剂等除高分子成分以外的成分的重均分子量或分子量通常小于10000。作为高分子成分,例如可以举出环氧树脂、苯氧基树脂、聚酰亚胺树脂、聚酰胺树脂、聚碳二酰亚胺树脂、氰酸酯酯树脂、丙烯酸树脂、聚酯树脂、聚乙烯树脂、聚醚砜树脂、聚醚酰亚胺树脂、聚乙烯缩丁醛树脂、聚氨酯树脂以及丙烯酸橡胶。从耐热性以及膜形成性优异的观点出发,高分子量成分可以选自环氧树脂、苯氧基树脂、聚酰亚胺树脂、丙烯酸树脂、丙烯酸橡胶、氰酸酯酯树脂以及聚碳二酰亚胺树脂。从耐热性以及膜形成性更优异的观点出发,高分子量成分可以选自环氧树脂、苯氧基树脂、聚酰亚胺树脂、丙烯酸树脂以及丙烯酸橡胶。这些高分子成分可以单独使用1种或组合使用2种以上。
高分子成分与丙烯酸树脂的质量比没有特别限制。相对于高分子成分1质量份,丙烯酸树脂的含量可以是0.01~10质量份、0.05~5质量份、或0.1~5质量份。该质量比为0.01质量份以上时,具有固化性提高、粘接力进一步提高的倾向。该质量比为10质量份以下时,具有热固性树脂组合物的膜形成性特别优异的倾向。
高分子成分与环氧树脂的质量比没有特别限制。相对于高分子成分1质量份,环氧树脂的含量可以是0.01~5质量份、0.05~4质量份、或0.1~3质量份。该质量比为0.01质量份以上时,具有固化性提高、粘接力进一步提高的倾向。该质量比为5质量份以下时,具有热固性树脂组合物的膜形成性特别优异的倾向。
高分子成分的玻璃化转变温度(Tg)从热固性树脂组合物对基板以及芯片的粘贴性优异的观点出发,可以为120℃以下、100℃以下、或85℃以下。高分子量成分的Tg可以为0℃以上。高分子成分的Tg为120℃以下时,具有容易将半导体芯片上形成的凸块、基板上形成的电极或配线图案等的高低差埋入在热固性树脂组合物中、因此可抑制气泡的残留、不易产生空孔的倾向。本说明书中,Tg是指使用DSC(PerkinElmer公司制DSC-7型)、在样品量为10mg、升温速度为10℃/分钟、测定环境气体为空气的条件下、利用示差扫描热量测定求出的值。
高分子成分的重均分子量以聚苯乙烯换算计可以为10000以上,为了在单独使用下显示更良好的膜形成性,可以是30000以上、40000以上、或50000以上。本说明书中,重均分子量是指使用高效液相色谱仪(岛津制作所制C-R4A)测定的聚苯乙烯换算的重均分子量。
(d)填料
本实施方式的热固性树脂组合物为了控制粘度以及固化物的物性、以及进一步抑制连接半导体芯片彼此或半导体芯片与基板时的空孔的产生和吸湿率,可以进一步含有填料。作为填料,例如可以举出无机填料以及树脂填料。作为无机填料,例如可以举出玻璃、二氧化硅、氧化铝、氧化钛、炭黑、云母以及氮化硼等绝缘性无机填料。从操作性的观点出发,无机填料可以选自二氧化硅、氧化铝、氧化钛以及氮化硼,从形状统一性(操作性)的观点出发,无机填料可以选自二氧化硅、氧化铝以及氮化硼。绝缘性无机填料还可以是晶须。作为晶须,例如可以举出硼酸铝、钛酸铝、氧化锌、硅酸钙、硫酸镁以及氮化硼。作为树脂填料,例如可以举出聚氨酯、聚酰亚胺、甲基丙烯酸甲酯树脂以及甲基丙烯酸甲酯-丁二烯-苯乙烯共聚树脂(MBS)。填料可以单独使用1种或组合使用2种以上。填料的形状、粒径、以及含量没有特别限制。
从绝缘可靠性优异的观点出发,填料可以是绝缘性的。本实施方式的热固性树脂组合物可以实质上不含有银填料、钎料填料等导电性的金属填料。例如,导电性的金属填料的含量以热固性树脂组合物的全部固体成分(除溶剂以外的成分)为基准,可以小于1质量%。
填料还可以通过表面处理来适当调整物性。填料从分散性以及粘接力提高的观点出发,可以是经表面处理的填料。作为表面处理剂,可以举出缩水甘油基系(环氧系)、胺系、苯基系、苯基氨基系、(甲基)丙烯酸系、乙烯基系的化合物等。
作为表面处理,从表面处理的容易性出发,优选利用环氧硅烷系、氨基硅烷系、丙烯酸硅烷系等硅烷化合物的硅烷处理。表面处理剂从分散性、流动性、粘接力优异的观点出发,可以是选自缩水甘油基系、苯基氨基系、丙烯酸系以及甲基丙烯酸系的化合物中的化合物。从保存稳定性的观点出发,表面处理剂可以是选自苯基系、丙烯酸系以及甲基丙烯酸系的化合物中的化合物。
填料的平均粒径从防止倒装片连接时的咬入的观点出发,可以是1.5μm以下。填料的平均粒径从可视性(透明性)优异的观点出发,可以是1.0μm以下。填料的粒径是指粒子的长轴直径。
树脂填料与无机填料相比,可以在260℃等高温下赋予柔软性,因此适于提高耐回流性。另外,树脂填料由于可以赋予柔软性,因此还有助于提高热固性树脂组合物的膜形成性。
填料的含量以热固性树脂组合物的全部固体成分(除溶剂以外的成分)为基准,可以为30~90质量%或40~80质量%。该含量为30质量%以上时,热固性树脂组合物的放热性提高,而且可以进一步抑制空孔产生以及吸湿率。该含量为90质量%以下时,具有可以抑制粘度升高所导致的热固性树脂组合物的流动性降低以及填料在连接部中的咬入(捕获)、连接可靠性进一步提高的倾向。
(e)助熔剂
本实施方式的热固性树脂组合物可以进一步含有助熔剂(即显示助熔活性(除去氧化物以及杂质的活性)的助熔活化剂)。作为助熔剂,例如可以举出咪唑类以及胺类等具有非共价电子对的含氮化合物、羧酸类、酚类以及醇类。与醇等相比,有机酸(2-甲基戊二酸等羧酸等)可以更强地表现助熔活性,连接性以及稳定性可以进一步提高。
助熔剂的含量以热固性树脂组合物的全部固体成分(除溶剂以外的成分)为基准,可以为0.005~10.0质量%或0.005~0.05质量%。
本实施方式的热固性树脂组合物还可以进一步含有离子捕获剂、抗氧化剂、硅烷偶联剂、钛偶联剂、流平剂等添加剂。添加剂可以单独使用1种或组合使用2种以上。添加剂的含量按照表现各添加剂的效果的方式适当调整即可。
将本实施方式的热固性树脂组合物在200℃下保持5秒后的固化反应率可以是80%以上或90%以上。在钎料熔融温度以下的200℃下保持5秒后的热固性树脂组合物的固化反应率为80%以上时,具有在钎料熔融温度以上的连接时的温度下钎料难以飞散以及流动、连接可靠性以及绝缘可靠性进一步提高的倾向。固化反应率可以通过对放入在铝盘中的未固化以及热处理后的热固性树脂组合物(膜状粘接剂)10mg进行使用DSC(PerkinElmer公司制DSC-7型)、升温速度为20℃/min、30~300℃的温度范围的示差扫描热量测定来求得。例如将示差扫描热量测定中未处理的样品的散热量ΔH(J/g)设为“ΔH1”、将加热板上进行200℃/5秒的热处理后的样品的散热量ΔH(J/g)设为“ΔH2”,由以下的式子算出固化反应率。
固化反应率(%)=(ΔH1-ΔH2)/ΔH1×100
热固性树脂组合物的固化反应(固化体系)为自由基聚合时,如果热固性树脂组合物含有阴离子聚合性的环氧树脂(特别是重均分子量低于10000的环氧树脂),则有时难以将固化反应率调整为80%以上。在热固性树脂组合物含有丙烯酸树脂以及环氧树脂时,环氧树脂的含量相对于丙烯酸树脂80质量份,可以为20质量份以下。
本实施方式的热固性树脂组合物可以用于200℃以上的高温下的压接。另外,在使钎料等的金属熔融而形成连接的倒装片封装中,表现出更优异的固化性。
本实施方式的粘接剂层从生产率提高观点出发,可以是由预先准备好的粘接剂膜形成的层。以下示出粘接剂膜的制作方法的例子。
首先,根据需要将热固性树脂、固化剂、高分子成分、填料、其它的添加剂等加入到有机溶剂中后,进行搅拌混合、混炼等使其溶解或分散,制备树脂清漆。接着,在实施过脱模处理的基材膜上,利用气刀涂布机、辊涂机、分配器、模涂机、逗号涂布机等涂布树脂清漆后,通过加热使有机溶剂减少,在基材膜上形成粘接剂膜。也可以利用在通过加热使有机溶剂减少之前将树脂清漆旋涂在晶片等上形成膜后进行溶剂干燥的方法,从而在晶片上形成粘接剂膜。
作为基材膜,只要是具有能够耐受使有机溶剂挥发时的加热条件的耐热性的膜则没有特别限制,可以举出聚酯膜、聚丙烯膜、聚对苯二甲酸乙二醇酯膜、聚酰亚胺膜、聚醚酰亚胺膜、聚醚萘二甲酸酯膜、甲基戊烯膜等。作为基材膜,并不限于由这些膜中的1种形成的单层膜,还可以是由2种以上的膜形成的多层膜。
用于由涂布后的树脂清漆中使有机溶剂挥发的加热条件例如可以是50~200℃、0.1~90分钟的范围。如果对安装后的空孔以及粘度调整没有影响,则也可以将加热条件设为使有机溶剂挥发到1.5%以下的条件。
<半导体用粘接剂>
一个实施方式的半导体用粘接剂含有(a’)重均分子量低于10000的树脂成分、(b)固化剂、以及(f)下述通式(1)所示的硅烷醇化合物。
[化学式编号2]
R1-R2-Si(OH)3 (1)
式中,R1表示烷基、苯基或它们组合而成的基团,R2表示亚烷基。该半导体用粘接剂可以作为上述的半导体装置的制造方法中用于形成粘接剂层的热固性树脂组合物进行使用。
本实施方式的半导体用粘接剂可以进一步含有(c)重均分子量为10000以上的高分子成分、助熔剂、填料等。以下对各成分进行说明。
(a’)重均分子量低于10000的树脂成分
作为(a’)重均分子量低于10000的树脂成分,没有特别限制,可以是与(b)固化剂反应的化合物(热固性树脂)。重均分子量小的成分在加热时发生分解等而会导致产生空孔,但该成分通过与固化剂反应,易于确保高的耐热性。作为(a)重均分子量低于10000的树脂成分,例如可以举出环氧树脂、丙烯酸树脂等。(a’)重均分子量低于10000的树脂成分为热固性树脂时,可以是与上述的“(a)热固性树脂”同样的方式。
关于半导体粘接剂的(d)固化剂以及其它方式,可以是与上述的热固性树脂组合物的“(d)固化剂”以及其它方式同样的方式。
(f)硅烷醇化合物
上述通式(1)所示的硅烷醇化合物从耐热性的观点出发,可以是在25℃下为固态。式(1)中的R1从耐热性、流动性的观点出发,可以是烷基或苯基。R1还可以是烷基与苯基的组合所形成的基团(烷基取代苯基或苯基烷基)。作为R1所示的基团,例如可以举出苯基、丙基、苯基丙基、以及苯基甲基。式(1)中的R2没有特别限制,从耐热性的观点出发,可以是重均分子量为100~5000的亚烷基。R2是重均分子量为100~5000的亚烷基的硅烷醇化合物通常具有约100~5000的范围的重均分子量。从高反应性(固化物强度)的观点出发,硅烷醇化合物可以是3官能硅烷醇。
通过在半导体用粘接剂中添加(f)硅烷醇化合物,流动性提高,抑制空孔性和高连接性进一步提高。流动性提高(粘度下降)时,进行芯片接触时容易排除卷入的空孔。(f)硅烷醇化合物具有高耐热性,其热重量减少量小。通过使用耐热性高的硅烷醇化合物,可以进一步抑制空孔产生。如果热重量减少量小,则挥发成分少,因而空孔减少,可靠性(耐回流性)也进一步提高。
(f)硅烷醇化合物的含量以半导体用粘接剂(除溶剂以外的成分)的总量为基准,可以为2~20质量%,从高流动化和固化物强度(粘接力等)的观点出发,可以为2~10质量%或2~9质量%。该含量为2质量%以上时,在高流动化的方面易于表现出更显著的效果。该含量为20质量%以下时,具有固化后的强度增加、表现出特别高的粘接力的倾向。(f)硅烷醇化合物的含量为某种程度地小时,环氧树脂或丙烯酸树脂的固化物的比率增大,因此可预料到会表现出更高的粘接力。
半导体用粘接剂可以是膜状、即粘接剂膜。膜状的半导体粘接剂除了在树脂清漆含有(f)硅烷醇化合物的方面以外,可以利用与上述的粘接剂膜的制作方法的例子同样的方法进行制作。
本实施方式的半导体用粘接剂例如可以在半导体芯片以及配线电路基板的各自的连接部相互电连接而成的半导体装置、或多个半导体芯片的各自的连接部相互电连接而成的半导体装置中的连接部的密封中特别优选地使用。
对使用了本实施方式的半导体用粘接剂的半导体装置进行说明。半导体装置中的连接部可以是凸块与配线的金属接合、以及凸块与凸块的金属接合中的任一种。半导体装置中,例如还可以使用介由半导体用粘接剂获得电连接的倒装片连接。半导体装置的例子如图4~7所示。连接在上述的凸块-凸块之间、凸块-垫片之间、凸块-配线之间进行。
本实施方式的半导体装置的制造方法可以包括:使用本实施方式的半导体用粘接剂,将半导体芯片以及配线电路基板、或者多个半导体芯片彼此进行连接。本实施方式的半导体装置的制造方法例如具备:在介由半导体用粘接剂将半导体芯片以及配线电路基板相互进行连接的同时、将半导体芯片以及配线电路基板的各自的连接部相互电连接、从而获得半导体装置的工序,或者在介由半导体用粘接剂将多个半导体芯片相互连接的同时、将多个半导体芯片的各自的连接部相互电连接、从而获得半导体装置的工序。
本实施方式的半导体装置的制造方法中,可以将连接部相互通过金属接合来进行连接。即将半导体芯片以及配线电路基板的各自的连接部相互通过金属接合来连接、或将多个半导体芯片的各自的连接部相互通过金属接合来连接。
本实施方式的半导体用粘接剂还可以在上述的第一、第二或第三实施方式的半导体装置中作为热固性树脂组合物进行使用。本实施方式的半导体用粘接剂由于在高温下具有高流动性,因此在作为用于正式压接的加热装置使用加热炉或加热板的第三实施方式中是特别有用的。
作为使用了本实施方式的半导体用粘接剂的半导体装置的制造方法的另一例,对图8所示的实施方式的半导体装置600的制造方法进行说明。半导体装置600中基板(例如玻璃环氧基板)2与半导体芯片1介由由半导体用粘接剂形成的粘接剂层40相互连接,所述基板2具有基板主体20以及作为连接部的配线(铜配线)15,所述半导体芯片1具有半导体芯片主体10、作为连接部的配线(例如铜柱、铜接线柱)15以及凸块30(连接凸块、钎料凸块)。半导体芯片1的配线15与基板2的配线15通过凸块30(连接凸块、钎料凸块)电连接。基板主体20中形成有配线15的表面上,除了凸块30的形成位置以外配置有阻焊剂70。基板2的配线15上实施了金镀覆。连接部的金属可以是钎料(锡-银)-金,熔点低的钎料达到熔点以上即可连接。半导体装置600也可以是半导体芯片彼此连接而成的。即可以代替基板2,由另外的半导体芯片与半导体芯片1连接。
半导体装置600的制造方法中,首先在形成有阻焊剂70的基板2上粘贴作为粘接剂层40的半导体用粘接剂(膜状粘接剂等)。粘贴可以通过加热压制、轧辊层压、真空层压等进行。粘接剂层40的供给面积以及厚度根据半导体芯片1或基板2的尺寸、凸块高度等适当设定。粘接剂层40可以粘贴在半导体芯片1上,也可以对半导体晶片粘贴本实施方式的半导体用粘接剂后将半导体晶片通过切割而将半导体芯片1制成单片,由此制作粘贴了粘接剂层40的半导体芯片1。将粘接剂层40粘贴在基板2或半导体芯片1上后,将半导体芯片1的配线15上的凸块30与基板2的配线15使用倒装片接合器等连接装置(压接装置)对位后进行压接(第一工序、暂时压接),将半导体芯片1和基板2加热到凸块30的熔点以上的温度(第二工序、正式压接),在将半导体芯片1与基板2连接的同时、通过粘接剂层40将半导体芯片1和基板2之间的空隙填充以密封连接部。正式压接(正式连接工序、第二工序)只要达到任一方连接部的金属的熔点以上进行即可。凸块30含有钎料时,可以按照凸块30的温度达到250℃以上的方式加热半导体芯片1和基板2。
暂时压接(第一工序)的连接负荷虽然依赖于凸块数,但可以考虑凸块的高度不均的吸收、凸块变形量的控制来进行设定。暂时压接(第一工序)后,半导体芯片1和基板2之间的连接部金属可以接触。如果在第一工序中连接部金属接触或连接,则第二工序后容易形成金属结合,并且半导体用粘接剂的咬入变少,因此特别容易获得良好的连接性。
暂时压接(第一工序)时,为了排除空孔地形成半导体芯片1和基板2间的连接部金属接触或金属结合,可以增大负荷。负荷大时,易于排除空孔,连接部的金属也容易接触。负荷例如可以是半导体芯片的每1针脚(1凸块)为0.009N~0.3N。
暂时压接(第一工序)从生产率提高的观点出发,可以设为短时间。例如暂时压接的时间可以是5秒以下,从生产率提高的观点出发可以是3秒以下或2秒以下。
暂时压接(第一工序)的温度(压接装置的温度)可以是压接工具(带有半导体用粘接剂)将半导体芯片进行抓取时热不转印的程度的低。通过将暂时压接(第一工序)的温度(压接装置的温度)设为高温,可以提高半导体用粘接剂的流动性以使得能够排除卷入时的空孔。暂时压接(第一工序)的温度(压接装置的温度)还可以是比半导体用粘接剂的反应开始温度低的温度。为了缩短冷却时间,还可以减小压接工具对半导体芯片进行抓取时的温度与半导体芯片彼此或半导体芯片-基板间的接触时(暂时压接时)的温度之差。该温度差可以是100℃以下或60℃以下,还可以恒定(相同设定温度)。温度差为100℃以下时,压接工具的冷却所需的时间变短,生产率进一步提高。反应开始温度是指使用DSC(PerkinElmer公司制、DSC-Pyirs1)、在样品量为10mg、升温速度为10℃/分钟、测定环境气体为空气或氮气环境气体的条件下的示差扫描热量测定中的On-set温度。
正式压接(第二工序)中的加热温度需要对封装施加钎料的熔点以上的温度。例如,如果连接部的金属为钎料,则优选230℃以上且330℃以下。如果为低温,则连接部的金属不熔融,不能形成充分的金属结合。如果为高温,则容易产生空孔,钎料容易飞散。
正式压接(正式连接工序、第二工序)中的加热温度还可以是比半导体用粘接剂的反应开始温度高的温度,以使得不仅形成金属结合,还促进半导体用粘接剂的固化。通过在正式连接工序中促进半导体用粘接剂的固化,可以特别有效地抑制进一步的空孔产生以及连接不良。
正式压接的加热(第二工序)没有特别限制,例如可以使用回流炉、烘箱、加热板等加热装置进行。作为加热装置,例如可以举出回流炉(Tamura制作所制)以及洁净烘箱(ESPEC制)等。
正式压接(第二工序)中,在进行芯片-芯片、芯片-基板、芯片-晶片、晶片-晶片等的连接时,也可以在它们之上放置重物,还可以将它们用夹子夹持。由此,可以更有效地抑制因半导体芯片间或半导体芯片与半导体用粘接剂间的热膨胀差产生的翘曲以及连接不良。
在使用压接机进行正式连接工序(第二工序)时,压接机的热难以传递到压接时的边缘鼓出到芯片侧面的半导体用粘接剂即胶瘤上。因此,有时在第二工序后需要用于使胶瘤部分等的半导体用粘接剂的固化充分的加热处理。另一方面,在使用用于正式压接(第二工序)的加热的回流炉、烘箱等加热炉或加热板等进行时,由于对被加热体整体地施加热,因此可以缩短或省去第二工序后的加热处理。
暂时压接(第一工序)中,可以将多个芯片一次性地进行压接。在TSV结构的封装中多见的堆栈压接中,立体地将多个芯片进行压接。此时,可以在将多个半导体芯片一个个地重叠后进行暂时压接的第一工序之后、在第二工序中将多个芯片一次性地进行正式压接。
实施例
以下列举实施例更具体地说明本发明。但是本发明并不限定于以下的实施例。
1.主要关于第一实施方式的研究例
1-1.粘接剂膜的制作
以下示出粘接剂膜的制作中使用的化合物。
(a)热固性树脂
丙烯酸树脂
·环氧化异氰脲酸三丙烯酸酯(新中村化学工业株式会社制、A-9300)
·具有芴骨架的丙烯酸酯化合物(大阪燃气化学株式会社制、EA0200、丙烯酰基的官能团数:2)
环氧树脂
·具有三苯酚甲烷骨架的多官能固态环氧树脂(JapanEpoxy Resin株式会社制、EP1032H60)
·双酚F型液态环氧树脂(JapanEpoxy Resin株式会社制、YL983U)
(b)固化剂
·二枯基过氧化物(日油株式会社制、PERCUMYL D)
·2,4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪异氰脲酸加成体(四国化成株式会社制、2MAOK-PW)
(c)高分子成分
·苯氧基树脂(东都化成株式会社制、ZX1356、Tg:约71℃、重均分子量:约63000)
·丙烯酸橡胶(日立化成株式会社制、KH-C865、Tg:0~12℃、重均分子量:450000~650000)
(d)填料
无机填料
·二氧化硅填料(株式会社Admatechs制、SE2050、平均粒径:0.5μm)
·用环氧硅烷进行了表面处理的二氧化硅填料(株式会社Admatechs制、SE2050SEJ、平均粒径:0.5μm)
·甲基丙烯酸表面处理纳米二氧化硅填料(株式会社Admatechs制、YA050CSM、以下记为“SM纳米二氧化硅”、平均粒径:约50nm)
树脂填料
·有机填料(Rohm and Haas Japan株式会社制、EXL-2655:芯鞘型有机微粒)
(e)助熔剂(羧酸)
·2-甲基戊二酸(Aldrich制、熔点:约77℃、以下记为“戊二酸”)
(制造例1-1)
将表1所示配合量(单位:质量份)的丙烯酸树脂(A9300)、无机填料(SE2050、SE2050SEJ以及SM纳米二氧化硅)以及树脂填料(EXL2655)按照不挥发成分(固体成分、除溶剂以外的成分)的浓度达到60质量%的方式加入到作为溶剂的甲乙酮中。接着,添加与加入到甲乙酮中的丙烯酸树脂以及无机填料的合计量相同量的φ1.0mm、φ2.0mm的珠粒,使用珠磨机(Fritsch Japan株式会社制、行星型微粉砕机P-7)搅拌30分钟。之后,加入作为高分子成分的苯氧基树脂(ZX1356),再次用珠磨机搅拌30分钟。搅拌后添加固化剂(PERCUMYLD)并搅拌,通过过滤除去珠粒,获得清漆。将所得清漆用小型精密涂饰装置(株式会社廉井精机制)进行涂饰,将涂膜用洁净烘箱(ESPEC制)进行干燥(70℃/10min),获得粘接剂膜。
(制造例1-2以及1-3)
除了将所使用的材料如表1所示进行变更以外,与制造例1-1同样地操作,获得粘接剂膜。助熔剂与热固性树脂同时添加。
表1
1-2.半导体装置的制造
(实施例1-1)
准备具有相向的载物台以及压接头的2台按压构件I、II(FCB3、松下制),将按压构件I用作暂时压接用构件,将按压构件II用作正式压接用按压构件,按以下的顺序制造半导体装置。
将所制作的制造例1-1的粘接剂膜进行剪裁(8mm×8mm×0.045mmt),粘贴在半导体芯片(芯片尺寸:10mm×10mm×0.4mmt、连接部的金属:Au、制品名:WALTS-TEG IP80、WALTS制)上。接着,将粘贴了粘接剂膜的半导体芯片供至作为暂时压接用按压构件的按压构件I的载物台上。将该载物台上的半导体芯片和带有钎料凸块的半导体芯片(芯片尺寸:7.3mm×7.3mm×0.15mmt、连接部的金属:铜柱+钎料、凸块高度:铜柱+钎料合计约45μm、凸块数为1048针脚、间距为80μm、制品名:WALTS-TEG CC80、WALTS制)按照各自的连接部相互相向的方式对位。之后,将由半导体芯片、粘接剂膜以及半导体芯片形成的层叠体夹持在压接头与载物台之间进行加压以及加热,将半导体芯片彼此暂时压接。接着,将暂时压接后的层叠体用作为正式压接用按压构件的按压构件II夹持进行加热以及加压,将半导体芯片彼此电连接。
暂时压接条件以及正式压接条件如下。这些条件是按照有关所得半导体装置的空孔评价以及连接评价达到“A”的方式设定的。
·暂时压接条件
压接头的温度:80℃、负荷:75N、载物台温度:80℃
·正式压接条件
压接头的温度:280℃、负荷:75N、载物台温度:80℃
在使2台按压构件I、II同时并行地工作的同时连续地制造多个半导体装置。将暂时压接以及正式压接所需的制造时间、半导体装置每1个封装(PKG)的制造时间、以及每1小时的半导体装置的生产数(UPH)的结果示于表2。
1-3.评价
(1)空孔评价
利用超声波图像诊断装置(Insight-300、Insight制)拍摄所得半导体装置的外观画像,利用扫描仪GT-9300UF(EPSON公司制)读入半导体芯片上的粘接剂层的画像。使用画像处理软件Adobe Photoshop(注册商标)通过色调校正、二色调转化识别空孔部分,通过直方图算出粘接剂层中空孔部分所占的比例。将半导体芯片上的粘接剂层的面积设为100%。将空孔的所占面积为10%以下的情形判定为“A”,将超过10%的情形判定为“B”。
(2)连接评价
通过使用万用表(ADVANTEST制、商品名“R6871E”)测定所制作的半导体装置的连接电阻值,评价安装后的初期导通。将外围部分的内周的初期连接电阻值为45Ω以下、且外周的初期连接电阻值为85Ω以下的情形评价为“A”,将内周的初期连接电阻值超过45Ω的情形、外周的初期连接电阻值超过85Ω的情形、以及未导通(不显示电阻值)的情形都评价为“B”。
(比较例1-1)
在使2台按压构件I、II在相同的压接条件下同时平行地工作的同时,使用制造例1的粘接剂膜按照以下的顺序制造了多个半导体装置。
在按压构件I、II的各自的载物台上将半导体芯片与带有凸块的半导体芯片对位。之后,一边用按压构件的压接头和载物台进行加压,一边使压接头的温度在1秒钟内升温至280℃,然后在该状态下保持2秒钟。由此,在将半导体芯片与带有凸块的半导体芯片相互压接的同时进行电连接。压接所花费的时间合计为3秒。之后,将压接头的温度从280℃冷却到半导体芯片供给温度的80℃。上述的压接条件是按照半导体装置的空孔评价以及连接评价达到“A”的方式设定的。
将各阶段所需的制造时间、半导体装置每1个封装(PKG)的制造时间、以及每1小时的封装的生产数(UPH)的结果示于表2。
表2
(实施例1-2)
除了使用制造例1-2的粘接剂膜以外,与实施例1同样地操作,制造了半导体装置。将结果示于表3。
(比较例1-2)
除了使用制造例1-2的粘接剂膜以外,与比较例1同样地操作,制造了半导体装置。将结果示于表3。
表3
(实施例1-3)
除了使用制造例1-3的粘接剂膜以外,与实施例1同样地操作,制造了半导体装置。将结果示于表4。
(比较例1-3)
除了使用制造例1-3的粘接剂膜、将压接头的温度用1秒钟升温至280℃后保持4秒钟、压接所花费的时间的合计为5秒以外,与比较例1同样地操作,制造了半导体装置。将结果示于表4。
表4
由表2~4的结果可知,根据本实施方式的方法,可以缩短半导体装置的制造时间,可以增多每1小时的半导体装置的生产数(UPH)。
2.主要涉及第一实施方式的研究例
2-1.粘接剂膜的制作
以下示出粘接剂膜的制作中使用的化合物。
(a)热固性树脂
丙烯酸树脂
·具有来自于芴的骨架的丙烯酸酯(大阪燃气化学株式会社制、EA0200、丙烯酰基的数:2)
(b)固化剂
·二枯基过氧化物(日油株式会社制、PERCUMYL D)
(c)高分子成分
·丙烯酸橡胶(日立化成株式会社制、KH-C865、Tg:0~12℃、重均分子量:450000~650000)
(d)填料
无机填料
·二氧化硅填料(株式会社Admatechs制、SE2050、平均粒径:0.5μm)
·用环氧硅烷进行了表面处理的二氧化硅填料(株式会社Admatechs制、SE2050SEJ、平均粒径:0.5μm)
·甲基丙烯酸表面处理纳米二氧化硅填料(株式会社Admatechs制、YA050CSM、以下记为“SM纳米二氧化硅”、平均粒径:约50nm)
树脂填料
·有机填料(Rohm and Haas Japan株式会社制、EXL-2655:芯鞘型有机微粒)
(制造例2-1)
将表5所示配合量(单位:质量份)的丙烯酸树脂(A9300)、无机填料(SE2050、SE2050SEJ以及SM纳米二氧化硅)以及树脂填料(EXL2655)按照不挥发成分(固体成分、除溶剂以外的成分)的浓度达到60质量%的方式加入到作为溶剂的甲乙酮中。接着,加入与固体成分相同量的φ1.0mm、φ2.0mm的珠粒,使用珠磨机(Fritsch Japan株式会社制、行星型微粉砕机P-7)搅拌30分钟。之后,加入作为高分子成分的苯氧基树脂(ZX1356),再次用珠磨机搅拌30分钟。搅拌后添加固化剂(PERCUMYL D)并搅拌,通过过滤除去珠粒,获得清漆。将所得清漆用小型精密涂饰装置(株式会社廉井精机制)进行涂饰,将涂膜用洁净烘箱(ESPEC制)进行干燥(70℃/10min),获得粘接剂膜。
表5
对所得粘接剂膜,利用下述的方法测定暂时压接工序时的温度下的熔融粘度。
[熔融粘度的测定]
使用流变仪(株式会社AntonPaar Japan制、MCR301),在样品厚度为400μm、升温速度为10℃/分钟、频率为1Hz的条件下使用测定夹具(一次性板(直径为8mm)以及一次性样品盘),测定表6所示的暂时压接工序时的压接头温度(℃)下的熔融粘度。将结果示于表6。
2-2.半导体装置的制造
(实施例1)
准备具有相向的载物台以及压接头的2台按压构件I、II(FCB3、松下制),将按压构件I用作暂时压接用构件,将按压构件II用作正式压接用按压构件,按以下的顺序制造半导体装置。
将所制作的制造例2-1的粘接剂膜进行剪裁(8mm×8mm×0.045mmt),粘贴在半导体芯片(芯片尺寸:10mm×10mm×0.4mmt、连接部的金属:Au、制品名:WALTS-TEG IP80、WALTS制)上。接着,将粘贴了粘接剂膜的半导体芯片供至作为暂时压接用按压构件的按压构件I的载物台上。将该载物台上的半导体芯片和带有钎料凸块的半导体芯片(芯片尺寸:7.3mm×7.3mm×0.15mmt、连接部的金属:铜柱+钎料、凸块高度:铜柱+钎料合计约45μm、凸块数为1048针脚、间距为80μm、制品名:WALTS-TEG CC80、WALTS制)按照各自的连接部相互相向的方式对位。之后,将由半导体芯片、粘接剂膜以及半导体芯片形成的层叠体夹持在压接头与载物台之间进行加压以及加热,按照连接部彼此接触的方式将半导体芯片彼此暂时压接。接着,将暂时压接后的层叠体用作为正式压接用按压构件的按压构件II夹持进行加热以及加压,将半导体芯片彼此电连接。暂时压接条件以及正式压接条件如表6所示。暂时压接以及正式压接中均是载物台温度为80℃、压接时间为2秒。
(实施例2-2~2-8)
除了将暂时压接工序以及正式压接工序中的压接头的温度以及负荷按表2所示进行变更以外,与实施例1同样地操作,制造了实施例2-2~2-8的半导体装置。
2-3.评价
对所得的半导体装置进行空孔评价以及连接评价。
[空孔评价]
利用超声波图像诊断装置(Insight-300、Insight制)拍摄所得半导体装置的外观画像,利用扫描仪GT-9300UF(EPSON公司制)读入半导体芯片上的粘接剂层的画像。使用画像处理软件Adobe Photoshop(注册商标)通过色调校正、二色调转化识别空孔部分,通过直方图算出空孔部分所占的比例。将半导体芯片上的粘接剂层的面积设为100%。将空孔所占的面积为5%以下的情形评价为“A”,将超过5%的情形评价为“B”。将结果示于表6。
[连接评价]
通过使用万用表(ADVANTEST制、商品名“R6871E”)测定所制作的半导体装置的连接电阻值,评价暂时压接工序后及正式压接工序后的导通。暂时压接工序后,将外围部分中导通(显示电阻值)的情形评价为“A”,将未导通(不显示电阻值)的情形评价为“B”。正式压接工序后,将外围部分的内周的初期连接电阻值为45Ω以下、且外周的初期连接电阻值为85Ω以下的情形评价为“A”,将内周的初期连接电阻值超过45Ω的情形、外周的初期连接电阻值超过85Ω的情形、以及未导通(不显示电阻值)的情形都评价为“B”。将结果示于表6。
由表6中实施例2-1~2-5与实施例2-6~2-6的比较确认了,粘接剂层(粘接剂层)的熔融粘度在暂时压接工序时的压接头温度下为7000Pa·s以下时,有助于空孔产生的抑制以及半导体装置的可靠性提高。
3.主要涉及第二实施方式的研究例
3-1.原材料
以下示出实施例中使用的一次性连接用片材。
·NITOFLON 900UL(日东电工株式会社、厚度为50μm、100μm)
·UPILEX SGA(宇部兴产株式会社、50μm、100μm(50μm×2))
·铝箔(住轻铝箔株式会社、100μm(20μm×5))
以下示出实施例中使用的化合物。
(a)热固性树脂
环氧树脂
·含三苯酚甲烷骨架的多官能固态环氧树脂(EP1032H60、Japan Epoxy Resin株式会社、重均分子量:800~2000)
·双酚F型液态环氧树脂(YL983U、Japan Epoxy Resin株式会社、分子量:约336)
·挠性半固态状环氧树脂(YL7175-1000、Japan Epoxy Resin株式会社、重均分子量:1000~5000)
丙烯酸树脂
·芴骨架丙烯酸酯树脂(EA0200、大阪燃气化学株式会社、2官能团、分子量:约546)
(b)固化剂
·2,4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪异氰脲酸加成体(2MAOK-PW、四国化成株式会社制)
·二枯基过氧化物(PERCUMYL D、日油株式会社)
(c)高分子成分
·苯氧基树脂(ZX1356-2、东都化成株式会社、Tg:约71℃、重均分子量:约63000)
·丙烯酸橡胶(KH-C865、日立化成制、Tg:0~12℃、重均分子量:450000~650000)
(d)填料
树脂填料
·有机填料(EXL-2655、Rohm and Haas Japan株式会社、芯鞘型有机微粒)
无机填料
·二氧化硅填料(SE2050、株式会社Admatechs、平均粒径为0.5μm)
·甲基丙烯酸表面处理纳米二氧化硅填料(YA050C-SM、株式会社Admatechs、平均粒径为约50nm)
(e)助熔剂
·2-甲基戊二酸(Aldrich、熔点为约77℃)
添加剂
·3-甲基丙烯酰氧基三甲氧基硅烷(OFS6030、Dow Corning Toray株式会社)
3-2.热固性树脂组合物的制作
将各种原材料按表7所示的配合比例混合,制备热固性树脂组合物A以及B。以下示出具体的制作方法。将热固性树脂、填料、以及根据需要的助熔剂按照不挥发成分(固体成分)的浓度达到60质量%的方式添加到甲乙酮中。之后,在该混合液中加入与固体成分同质量的φ1.0mm、φ2.0mm的珠粒,利用珠磨机(Fritsch Japan株式会社、行星型微粉砕机P-7)搅拌30分钟。在混合液中加入高分子成分,用珠磨机搅拌30分钟。搅拌后加入固化剂以及根据需要的添加剂并搅拌,通过过滤混合液以除去珠粒,获得滤液作为热固性树脂组合物A或B。
表7
3-3.粘接剂膜的制作
将所制作的热固性树脂组合物A或B用小型精密涂饰装置(廉井精机)进行涂饰,用洁净烘箱(ESPEC制)进行干燥(70℃/10分钟),获得粘接剂膜。
3-4.半导体装置的制造
将具有8mm×8mm×0.045mmt的尺寸的粘接剂膜粘贴在半导体芯片(10mm、0.4mm厚、连接部金属:Au、制品名:WALTS-TEG IP80、WALTS制)上。将带有该粘接膜的半导体芯片介由粘接膜与带有钎料凸块的半导体芯片(芯片尺寸:7.3mm×7.3mm×0.15mmt、凸块高度:铜柱+钎料高度合计为约45μm、凸块数为1048针脚、间距为80μm、制品名:WALTS-TEG CC80、WALTS制)接触,将其用FCB3(松下制、压接头面积:7.3mm×7.3mm)暂时压接,制作了层叠体。对于使用了热固性树脂组合物A的层叠体,将FCB3的压接头的温度设定为130℃,在50N的压力下加热加压3秒钟,由此进行暂时压接。对于使用了热固性树脂组合物B的层叠体,将FCB3的压接头的温度设为130℃,在100N的压力下加热以及加压3秒钟,由此进行暂时压接。准备9个暂时压接后的层叠体,在压接头的面积为100mm×100mm的一次性连接用装置(ALPHADESIGN制、HTB-MM)的载物台上设置9个层叠体。设置后,将100mm×100mm的一次性连接用片材覆盖在层叠体上,一次性地进行正式压接,获得半导体装置。正式压接是将载物台温度设定为80℃、将压接头的温度设定为250℃、在900N(每1个层叠体为100N)的压力下加热以及加压5秒钟来进行的。
3-5.评价
[250℃下的一次性连接用片材的贮藏弹性模量]
使用弹性模量测定装置RSA2(Rheometric Scientific,Inc.),在频率为10Hz、升温速度为5℃/分钟的条件下从-30℃升温到300℃,同时测定从一次性连接用片材中切出的宽为4mm、长为40mm的试验片的粘弹性。由测定结果求出250℃下的贮藏弹性模量。
[250℃下的一次性连接用片材的位移量测定]
250℃下的一次性连接用片材的位移量是利用电气机械式万能试验机(INSTRON制、5900系列)、Bluehill3软件进行测定。在250℃的槽内设置一次性连接用片材,进行如下的压缩试验:使用具有直径为8μm的圆形端面的棒状的按压用夹具,按一次性连接用片材的主面与按压用夹具的端面平行的朝向抵压。通过按压用夹具,以0.001mm/秒的速度将100N(约2MPa)的负荷施加于一次性连接用片材。压缩负荷从0N变为100N后经过5秒,将负荷100N下稳定的时刻的位移量记录为一次性连接用片材的膜厚的位移量。
[连接评价]
在正式压接后,使用万用表(ADVANTEST制、R6871E)测定半导体装置的初期导通的能否。将外围部分的内周的初期连接电阻值为40Ω以下、外周的初期连接电阻值为85Ω以下的半导体装置评价为OK、将高于该电阻值或未连接的半导体装置评价为NG。9个半导体装置中达到OK评价的数目为全部9个的情形下将综合评价判定为A,除此以外的情形判定为B。
将使用热固性树脂组合物A以及各种一次性连接用片材一次性地制造半导体装置的结果示于表8。
表8
将使用热固性树脂组合物B以及各种一次性连接用片材一次性地制造半导体装置的结果示于表9。
表9
由表8以及9的结果确认了,在将多个半导体芯片与多个另外的半导体芯片一次性地正式压接时,通过使用具有250℃下为10GPa以下的贮藏弹性模量和250℃下为40μm以上的位移量的一次性连接用片材,可以更有效地制造良好连接的半导体装置。
4.主要涉及第三实施方式的研究例
4-1.粘接剂膜的制作
以下示出粘接剂膜的制作中使用的化合物。
(a)热固性树脂
丙烯酸树脂
·环氧化异氰脲酸三丙烯酸酯(新中村化学工业株式会社制、A-9300、丙烯酰基的官能团数:3)
·具有来自于芴的骨架的丙烯酸酯化合物(大阪燃气化学株式会社制、EA0200、丙烯酰基的官能团数:2)
(b)固化剂
·二枯基过氧化物(日油株式会社制、PERCUMYL D)
(c)高分子成分
·苯氧基树脂(东都化成株式会社制、ZX1356、Tg:约71℃、重均分子量:约63000)
·丙烯酸橡胶(日立化成株式会社制、KH-C865、Tg:0~12℃、重均分子量:450000~650000)
(d)填料
无机填料
·二氧化硅填料(株式会社Admatechs制、SE2050、平均粒径:0.5μm)
·用环氧硅烷进行了表面处理的二氧化硅填料(株式会社Admatechs制、SE2050SEJ、平均粒径:0.5μm)
·甲基丙烯酸表面处理纳米二氧化硅填料(株式会社Admatechs制、YA050CSM、以下记为“SM纳米二氧化硅”、平均粒径:约50nm)
树脂填料
·有机填料(Rohm and Haas Japan株式会社制、EXL-2655:芯鞘型有机微粒)
(制造例4-1)
将表1所示配合量(单位:质量份)的丙烯酸树脂(A9300)、无机填料(SE2050、SE2050SEJ以及SM纳米二氧化硅)以及树脂填料(EXL2655)按照不挥发成分(固体成分、除溶剂以外的成分)的浓度达到60质量%的方式加入到作为溶剂的甲乙酮中。接着,添加与加入到甲乙酮中的丙烯酸树脂以及无机填料的合计量相同量的φ1.0mm、φ2.0mm的珠粒,使用珠磨机(Fritsch Japan株式会社制、行星型微粉砕机P-7)搅拌30分钟。之后,加入作为高分子成分的苯氧基树脂(ZX1356),再次用珠磨机搅拌30分钟。搅拌后添加固化剂(PERCUMYLD)并搅拌,通过过滤除去珠粒,获得清漆。将所得清漆用小型精密涂饰装置(株式会社廉井精机制)进行涂饰,用洁净烘箱(ESPEC制)进行干燥(70℃/10min),获得粘接剂膜。
(制造例4-2)
除了将所使用的材料如表10所示进行变更以外,与制造例4-1同样地操作,获得粘接剂膜。
表10
4-2.半导体装置的制造
(实施例4-1)
将所制作的制造例4-1的粘接剂膜进行剪裁(8mm×8mm×0.045mmt),粘贴在半导体芯片(芯片尺寸:10mm×10mm×0.4mmt、连接部的金属:Au、制品名:WALTS-TEG IP80、WALTS制)上。接着,将粘贴了粘接剂膜的半导体芯片供至作为暂时压接用按压构件准备的按压构件的载物台上。将该载物台上的半导体芯片与带有钎料凸块的半导体芯片(芯片尺寸:7.3mm×7.3mm×0.15mmt、连接部的金属:铜柱+钎料、凸块高度:铜柱+钎料合计约为45μm、凸块数为1048针脚、间距为80μm、制品名:WALTS-TEG CC80、WALTS制)按照各自的连接部相互相向的方式对位。之后,将由半导体芯片、粘接剂膜以及半导体芯片形成的层叠体夹持在压接头与载物台之间进行加压以及加热,将半导体芯片彼此暂时压接。
接着,将所得的层叠体搬送到回流炉中,将最高温度设为260℃,加热600秒,从而将芯片-芯片间电连接。在暂时压接工序中形成多个层叠体,将它们一次性地搬送到回流炉中,从而一次性地制造多个半导体装置。
上述的半导体装置的制造中,按照下述的连接评价达到A的方式来设定条件。将半导体装置每1个封装(PKG)的暂时压接工序以及加热工序分别所需的制造时间、半导体装置每100个封装(PKG)的制造时间的结果示于表11。
·暂时压接条件
压接头的温度:80℃、负荷:75N、载物台温度:80℃
4-3.评价
[连接评价]
通过使用万用表(ADVANTEST制、商品名“R6871E”)测定所制作的半导体装置的连接电阻值,评价安装后的初期导通。将外围部分的内周的初期连接电阻值为45Ω以下、且外周的初期连接电阻值为85Ω以下的情形评价为“A”,将内周的初期连接电阻值超过45Ω的情形、外周的初期连接电阻值超过85Ω的情形、以及未导通(不显示电阻值)的情形都评价为“B”。
(比较例4-1)
除了在以下的方面变更了条件以外,与实施例4-1同样地操作,制造了半导体装置。在按压构件的载物台上将半导体芯片与带有凸块的半导体芯片对位。之后,一边用按压构件的压接头和载物台进行加压,一边将压接头的温度用1秒钟升温至280℃,然后在该状态下保持2秒钟。由此,将半导体芯片和带有凸块的半导体芯片相互压接,进行电连接。压接所花费的时间合计为3秒。之后,将压接头的温度从280℃冷却到半导体芯片供给温度的80℃。使用按压构件制造了多个半导体装置。上述的半导体装置的制造中,按照上述的连接评价达到“A”的方式来设定条件。将压接工序的各阶段所需的制造时间、半导体装置每100个封装(PKG)的制造时间的结果示于表11。
表11
(实施例4-2)
作为加热装置,代替回流炉而使用烘箱,将层叠体在260℃的烘箱内加热600秒,除此以外与实施例4-1同样地操作,进行半导体装置的制造。将结果示于表12。
表12
(实施例4-3)
除了使用制造例4-2的粘接剂膜以外,与实施例4-1同样地操作,进行半导体装置的制造。将结果示于表13。
(比较例4-2)
除了使用制造例4-2的粘接剂膜以外,与比较例4-1同样地操作,进行半导体装置的制造。将结果示于表13。
表13
(实施例4-4)
作为加热装置,代替回流炉而使用烘箱,将层叠体在260℃的烘箱内加热600秒,除此以外与实施例4-3同样地操作,进行半导体装置的制造。将结果示于表14。
表14
由表11~14的结果可知,根据本实施方式的制造半导体装置的方法,可以缩短半导体装置的制造时间。
5.主要涉及第三实施方式的研究例
5-1.原材料
以下示出实施例中使用的化合物。
(i)重均分子量低于10000的树脂成分
(环氧树脂)
·含三苯酚甲烷骨架的多官能固态环氧树脂(Japan Epoxy Resin株式会社、EP1032H60、以下记为“EP1032”)、重均分子量:800~2000
·双酚F型液态环氧树脂(Japan Epoxy Resin株式会社、YL983U、以下记为“YL983”)、重均分子量:约336
·挠性半固态状环氧(Japan Epoxy Resin株式会社、YL7175-1000、以下记为“YL7175”)、重均分子量:1000~5000
(ii)固化剂
·2,4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪异氰脲酸加成体(四国化成株式会社制、2MAOK-PW、以下记为“2MAOK”)
(iii)重均分子量为10000以上的高分子成分
·苯氧基树脂(东都化成株式会社、ZX1356-2、Tg:约71℃、Mw:约63000、以下记为“ZX1356”)
(iv)助熔剂(羧酸)
·2-甲基戊二酸(Aldrich、熔点约77℃、以下记为“戊二酸”)
(v)填料
(无机填料)
·二氧化硅填料(株式会社Admatechs、SE2050、平均粒径为0.5μm)
·苯基表面处理纳米二氧化硅填料(株式会社Admatechs、YA050C-SP、以下记为SP纳米二氧化硅、平均粒径为约50nm)
(树脂填料)
·有机填料(Rohm and Haas Japan株式会社公司制、EXL-2655:芯鞘型有机微粒)
(vi)有机硅树脂
准备具有以下的化学式所示的基本结构的有机硅树脂。
[化学式编号3]
R1-R2-Si(OX)3
(硅烷醇化合物)
·固态硅烷醇、R1:苯基或丙基、R2:亚烷基、X:H(Dow Corning Toray株式会社公司制、RSN-6018、分子量:约2000)
·固态硅烷醇、R1:苯基、R2:亚烷基、X:H(Dow Corning Toray株式会社公司制、FCA107、分子量:约3000)
(其它有机硅树脂)
·液态有机硅树脂、R1:甲基、R2:亚烷基、X:CH3(Dow Corning Toray株式会社公司制、SR2402、分子量:约1500)
5-2.膜状粘接剂的制作
(实施例5-1)
在环氧树脂、2MAOK、2-甲基戊二酸、无机填料、树脂填料以及硅烷醇中按照NV(不挥发成分)达到60质量%的方式添加有机溶剂(甲乙酮)。之后,加入与固体成分同质量的φ1.0mm、φ2.0mm的珠粒,使用珠磨机(Fritsch Japan株式会社、行星型微粉砕机P-7)搅拌30分钟。之后加入ZX1356,再次用珠磨机搅拌30分钟。通过过滤除去搅拌中用过的珠粒。将所制作的清漆(半导体用粘接剂)用小型精密涂饰装置(廉井精机)进行涂饰,将涂膜用洁净烘箱(ESPEC制)进行干燥(70℃/10min),获得膜状粘接剂。
(实施例5-2~5-4、参考例5-1~5-3)
除了将所使用的材料如表15所示进行变更以外,与实施例5-1的膜状粘接剂的制作方法同样地操作,制作了膜状粘接剂。表15中各材料的配合量是不挥发成分的配合量,单位为质量份。
5-3.评价
(1)热重量减少量评价
将约10mg的有机硅树脂单体放入Pt盘中,利用TG/DTA测定装置(SeikoInstruments株式会社制、EXSTAR6000)测定从35℃到400℃的热重量减少。升温速度设为10℃/min。将260℃的热重量减少量为20%以下的样品评价为A、将260℃的热重量减少量多于20%的情形评价为B。
(2)粘度测定
使用流变仪MCR301(株式会社AntonPaar Japan制)。在载物台上供给半导体用粘接剂,按照不产生空孔的方式设置测定夹具。测定条件是载物台与测定夹具(φ8mm)的间隔为0.3mm、摆角为gamma=5%、频率为f=1Hz、法向力FN=0μN、升温速度为10℃/min、测定范围为30℃~180℃。由粘度曲线求出130℃(下述(3)的第一工序的温度)下的粘度。
(3)半导体装置的制造(连接评价)
将所制作的膜状粘接剂进行剪裁(7.3mm×7.3mm×0.045mmt),粘贴在带有钎料凸块的半导体芯片(芯片尺寸:7.3mm×7.3mm×0.15mmt、凸块高度:铜柱+钎料合计为约45μm、凸块数为1048、间距80μm、WALTS-TEG CC80ModelI、WALTS制)上,以承受侧的半导体芯片(芯片尺寸:10mm×10mm×0.1mmt、WALTS-TEG IP80、WALTS制)用FCB3(松下制)进行暂时压接。载物台温度设为80℃。以130℃/100N/3s对位后进行暂时压接(第一工序)。将暂时压接后的层叠体通至达到最高温度260℃的回流炉(Tamura制作所制)中约600s(10min),由此进行正式压接,获得半导体装置封装的样品。在第一工序后以及第二工序后分别使用万用表(ADVANTEST制、R6871E)测定初期导通的能否。将外围部(内周部)的连接电阻值为32.0~38.0Ω的样品评价为A(连接良好)、将除此以外的电阻值或Open评价为B(连接不良)。
(4)空孔评价
对上述(3)制作的样品,在第一工序后以及第二工序后分别利用超声波图像诊断装置(Insight-300、Insight制)拍摄外观画像,利用扫描仪GT-9300UF(EPSON公司制)读入芯片上的由半导体用粘接剂形成的层(粘接剂层)的画像。使用画像处理软件AdobePhotoshop通过色调校正、二色调转化从画像中识别空孔部分,利用直方图算出空孔部分所占的比例。将芯片上的半导体用粘接剂部分的面积设为100%,将空孔产生率为5%以下评价为A、将空孔产生率多于5%的情形评价为B。
(5)耐回流性评价
将上述(3)中制作的封装用密封材料(日立化成制、CEL9750ZHF10)进行模塑(条件:180℃/6.75MPa/90s)。接着,在洁净烘箱(ESPEC制)中于175℃下进行后固化5小时。之后,在JEDEC level 2条件下进行高温吸湿后进行回流评价(回流炉:Tamura制作所制)(通回流炉3次)。将回流后无剥离、连接良好的样品评价为A,将产生了剥离或连接不良的样品评价为B。连接评价方法利用与上述(3)同样的方法进行。
表15
确认到:添加了通式(1)所示的固态硅烷醇的实施例5-1~5-4的半导体用粘接剂在第一工序后、第二工序后均没有空孔,均可以确保连接,并且耐回流性也均满足。
如以上所说明的,通过在将正式压接用的按压构件维持在高温的同时连续地制造半导体装置的方法,可以充分地抑制空孔的产生,获得连接可靠性优异的半导体装置。而且,在将多个半导体芯片与多个基板及/或多个另外的半导体芯片一次性地正式压接时,可以获得具有良好连接的半导体装置。
符号说明
1半导体芯片、2基板、3层叠体、5插入器、10半导体芯片主体、15、16配线、20基板主体、30、32、33凸块、34贯穿电极、40粘接剂层、41、44压接头、42、45载物台、43暂时压接用的按压装置、46正式压接用的按压装置、50插入器主体、70阻焊剂、100、200、300、400、500、600半导体装置。
Claims (18)
1.一种制造半导体装置的方法,
所述半导体装置具备:半导体芯片;基板及/或另外的半导体芯片;以及介于它们之间的粘接剂层,
所述半导体芯片、所述基板、以及所述另外的半导体芯片各自具有带有由金属材料形成的表面的连接部,所述半导体芯片的连接部与所述基板及/或所述另外的半导体芯片的连接部通过金属接合而电连接,
所述方法依次具备下述工序:
通过将层叠体用相向的一对暂时压接用按压构件夹持来进行加热以及加压,由此将所述基板、所述另外的半导体芯片或半导体晶片暂时压接在所述半导体芯片上,所述层叠体具有:所述半导体芯片;所述基板、所述另外的半导体芯片或含有相当于所述另外的半导体芯片的部分的所述半导体晶片;以及配置在它们之间的所述粘接剂层,所述半导体芯片的连接部与所述基板或所述另外的半导体芯片的连接部相向配置,
通过将所述层叠体用不同于所述暂时压接用按压构件的另外准备的相向的一对正式压接用按压构件夹持来进行加热以及加压,由此将所述半导体芯片的连接部与所述基板或所述另外的半导体芯片的连接部通过金属接合来进行电连接,
其中,所述一对暂时压接用按压构件中的至少一个在对所述层叠体进行加热以及加压时,被加热到比形成所述半导体芯片的连接部的表面的金属材料的熔点、以及形成所述基板或所述另外的半导体芯片的连接部的表面的金属材料的熔点低的温度,
所述一对正式压接用按压构件中的至少一个在对所述层叠体进行加热以及加压时,被加热到形成所述半导体芯片的连接部的表面的金属材料的熔点、或者形成所述基板或所述另外的半导体芯片的连接部的表面的金属材料的熔点中的至少任一个的熔点以上的温度。
2.根据权利要求1所述的方法,其中,在维持所述一对正式压接用按压构件中的至少一个被加热到形成所述半导体芯片的连接部的表面的金属材料的熔点、或者形成所述基板或所述另外的半导体芯片的连接部的表面的金属材料的熔点中的至少任一个的熔点以上的温度的状态的同时,连续地制造多个半导体装置。
3.根据权利要求2所述的方法,其中,所述粘接剂层的熔融粘度在所述暂时压接用按压构件被加热的温度下为7000Pa·s以下。
4.一种制造半导体装置的方法,
所述半导体装置具备:半导体芯片;基板及/或另外的半导体芯片;以及介于它们之间的粘接剂层,
所述半导体芯片、所述基板、以及所述另外的半导体芯片各自具有带有由金属材料形成的表面的连接部,所述半导体芯片的连接部与所述基板及/或所述另外的半导体芯片的连接部通过金属接合而电连接,
所述方法依次具备下述工序:
通过将层叠体用相向的一对暂时压接用按压构件夹持来进行加热以及加压,由此将所述基板或所述另外的半导体芯片或半导体晶片暂时压接在所述半导体芯片上,所述层叠体具有:所述半导体芯片;所述基板、所述另外的半导体芯片或含有相当于所述另外的半导体芯片的部分的所述半导体晶片;以及配置在它们之间的所述粘接剂层,所述半导体芯片的连接部与所述基板或所述另外的半导体芯片的连接部相向配置,
通过将配置在载物台上的多个所述层叠体或者多个具有所述半导体芯片、所述半导体晶片以及所述粘接剂的所述层叠体与按照将它们覆盖的方式配置的一次性连接用片材用所述载物台和与该载物台相向的压接头夹持,一次性地对多个所述层叠体进行加热以及加压,由此将所述半导体芯片的连接部与所述基板或所述另外的半导体芯片的连接部通过金属接合来进行电连接,
其中,所述一对暂时压接用按压构件中的至少一个在对所述层叠体进行加热以及加压时,被加热到比形成所述半导体芯片的连接部的表面的金属材料的熔点、以及形成所述基板或所述另外的半导体芯片的连接部的表面的金属材料的熔点低的温度,
所述载物台以及所述压接头中的至少一个被加热到形成所述半导体芯片的连接部的表面的金属材料的熔点、或者形成所述基板或所述另外的半导体芯片的连接部的表面的金属材料的熔点中的至少任一个的熔点以上的温度,
所述一次性连接用片材具有250℃下为10GPa以下的贮藏弹性模量和250℃下为40μm以上的位移量,
所述位移量是在将具有直径为8μm的圆形端面的棒状的按压用夹具按所述端面与所述一次性连接用片材的主面平行的朝向抵压在所述主面上的压缩试验中、在250℃的环境下、压缩负荷为100N时的位移量。
5.一种半导体用粘接剂,其含有(a)具有低于10000的重均分子量的树脂成分、(b)固化剂、以及(c)下述通式(1)所示的硅烷醇化合物,
[化学式编号1]
R1-R2-Si(OH)3 (1)
式中,R1表示烷基或苯基,R2表示亚烷基。
6.根据权利要求5所述的半导体用粘接剂,其中,所述R1为苯基。
7.根据权利要求5或6所述的半导体用粘接剂,其中,所述(c)硅烷醇化合物在25℃下为固态。
8.根据权利要求5~7中任一项所述的半导体用粘接剂,其进一步含有(d)具有10000以上的重均分子量的高分子成分。
9.根据权利要求8所述的半导体用粘接剂,其中,所述(d)具有10000以上的重均分子量的高分子成分具有30000以上的重均分子量以及100℃以下的玻璃化转变温度。
10.根据权利要求5~9中任一项所述的半导体用粘接剂,其用于在经过下述第一工序和第二工序制造半导体装置时形成密封下述连接部的粘接剂层,
所述半导体装置是半导体芯片以及配线电路基板各自的连接部彼此电连接而成的半导体装置、或者是多个半导体芯片各自的连接部彼此电连接而成的半导体装置,
所述第一工序是在比所述连接部的金属的熔点低的温度下进行压接的工序,
所述第二工序是通过在所述连接部的金属的熔点以上的高温下进行加热处理来形成金属结合的工序。
11.一种制造半导体装置的方法,
所述半导体装置具备:半导体芯片;基板及/或另外的半导体芯片;以及介于它们之间的粘接剂层,
所述半导体芯片、所述基板、以及所述另外的半导体芯片各自具有带有由金属材料形成的表面的连接部,所述半导体芯片的连接部与所述基板及/或所述另外的半导体芯片的连接部通过金属接合而电连接,
所述方法依次具备下述工序:
通过将层叠体用相向的一对暂时压接用按压构件夹持来进行加热以及加压,由此将所述基板、所述另外的半导体芯片或半导体晶片暂时压接在所述半导体芯片上,所述层叠体具有:所述半导体芯片;所述基板、所述另外的半导体芯片或含有相当于所述另外的半导体芯片的部分的所述半导体晶片;以及配置在它们之间的所述粘接剂层,所述半导体芯片的连接部与所述基板或所述另外的半导体芯片的连接部相向配置,
将所述半导体芯片的连接部与所述基板或所述另外的半导体芯片的连接部通过金属接合来进行电连接,
其中,所述一对暂时压接用按压构件中的至少一个在对所述层叠体进行加热以及加压时,被加热到比形成所述半导体芯片的连接部的表面的金属材料的熔点、以及形成所述基板或所述另外的半导体芯片的连接部的表面的金属材料的熔点低的温度,
在将所述半导体芯片的连接部与所述基板或所述另外的半导体芯片的连接部通过金属接合来进行电连接的工序中,所述层叠体在加热炉内或加热板上被加热到形成所述半导体芯片的连接部的表面的金属材料的熔点、或者形成所述基板或所述另外的半导体芯片的连接部的表面的金属材料的熔点中的至少任一个的熔点以上的温度。
12.根据权利要求11所述的方法,其中,多个所述层叠体在所述加热炉内或所述加热板上一次性地被加热。
13.根据权利要求11或12所述的方法,其中,所述粘接剂层是含有权利要求5~9中任一项所述的半导体用粘接剂的层。
14.根据权利要求1~4、11以及12中任一项所述的方法,其中,所述粘接剂层是含有热固性树脂组合物的层,所述热固性树脂组合物含有具有10000以下的分子量的热固性树脂及其固化剂。
15.根据权利要求14所述的方法,其中,所述热固性树脂组合物进一步含有具有10000以上的重均分子量的高分子成分。
16.根据权利要求15所述的方法,其中,所述高分子成分的重均分子量为30000以上,所述高分子成分的玻璃化转变温度为100℃以下。
17.根据权利要求1~4以及11~16中任一项所述的方法,其中,所述粘接剂层是利用预先准备好的粘接剂膜形成的层。
18.根据权利要求1~4以及11~17中任一项所述的方法,其中,在使所述半导体芯片的连接部与所述基板或所述另外的半导体芯片的连接部接触的同时,将所述基板或所述另外的半导体芯片暂时压接在所述半导体芯片上。
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