TW202220154A - 半導體封裝 - Google Patents

半導體封裝 Download PDF

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Publication number
TW202220154A
TW202220154A TW110132459A TW110132459A TW202220154A TW 202220154 A TW202220154 A TW 202220154A TW 110132459 A TW110132459 A TW 110132459A TW 110132459 A TW110132459 A TW 110132459A TW 202220154 A TW202220154 A TW 202220154A
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Taiwan
Prior art keywords
cured layer
semiconductor
layer
semiconductor wafer
semiconductor package
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TW110132459A
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English (en)
Inventor
李銑浩
華日 陳
洪鍾波
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南韓商三星電子股份有限公司
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Priority claimed from US17/329,230 external-priority patent/US11842982B2/en
Application filed by 南韓商三星電子股份有限公司 filed Critical 南韓商三星電子股份有限公司
Publication of TW202220154A publication Critical patent/TW202220154A/zh

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Abstract

一種半導體封裝包括：下部半導體晶片，具有下部半導體基板及位於所述下部半導體基板的頂表面上的上部接墊；上部半導體晶片，堆疊於所述下部半導體晶片上，所述上部半導體晶片包括上部半導體基板及位於所述上部半導體基板的底表面上的焊料凸塊；以及固化層，位於所述下部半導體晶片與所述上部半導體晶片之間，所述固化層包括：第一固化層，鄰近於所述上部半導體晶片，所述第一固化層包含第一光固化劑；以及第二固化層，位於所述第一固化層與所述下部半導體基板的所述頂表面之間，所述第二固化層包含第一熱固化劑。

Description

半導體封裝
本揭露是有關於一種半導體封裝，且具體而言，是有關於一種使用處理帶（processing tape）製作的半導體封裝。 [相關申請案的交叉參考]
於2020年11月2日在韓國智慧財產局中提出申請且標題為「半導體封裝（Semiconductor Package）」的韓國專利申請案第10-2020-0144540號全文併入本案供參考。
隨著電子工業的發展，變得有可能經濟有效地製造輕、小、快及高性能的電子產品。半導體裝置可以包括多個垂直堆疊的半導體晶片的堆疊的形式製造。在形成半導體晶片的堆疊的製程中，可使用例如非導電膜等處理帶。
根據實施例，一種半導體封裝可包括：下部半導體晶片，具有下部半導體基板及設置於所述下部半導體基板的頂表面上的上部接墊；上部半導體晶片，堆疊於所述下部半導體晶片上，所述上部半導體晶片包括上部半導體基板及設置於所述上部半導體基板的底表面上的焊料凸塊；以及固化層，夾置於所述下部半導體晶片與所述上部半導體晶片之間。所述固化層可包括：第一固化層，鄰近於所述上部半導體晶片；以及第二固化層，夾置於所述第一固化層與所述下部半導體基板的所述頂表面之間。所述第一固化層可包含第一光固化劑，且所述第二固化層可包含第一熱固化劑。
根據另一實施例，一種半導體封裝可包括：下部半導體晶片，具有下部半導體基板及設置於所述下部半導體基板的頂表面上的上部接墊；上部半導體晶片，堆疊於所述下部半導體晶片上，所述上部半導體晶片包括上部半導體基板及設置於所述上部半導體基板的底表面上的焊料凸塊；以及固化層，夾置於所述下部半導體晶片與所述上部半導體晶片之間。所述固化層可包括：第一固化層，鄰近於所述上部半導體晶片；以及第二固化層，夾置於所述第一固化層與所述下部半導體基板的所述頂表面之間。所述第一固化層可包含第一熱固化劑，所述第二固化層可包含第二熱固化劑，且所述第一熱固化劑的固化溫度可低於所述第二熱固化劑的固化溫度。
根據又一實施例，一種半導體封裝可包括：中介層基板；外連接端子，設置於所述中介層基板的底表面上；晶片堆疊，安裝於所述中介層基板上，所述晶片堆疊包括垂直地且交替地堆疊的半導體晶片與固化層；以及模製層，設置於所述中介層基板上，以覆蓋所述晶片堆疊的側表面及所述中介層基板的頂表面。所述半導體晶片中的每一者可包括：半導體基板；穿透結構，穿透所述半導體基板；電路絕緣層及互連線，設置於所述半導體基板的底表面上；下部接墊，連接至所述互連線；上部接墊，設置於所述半導體基板上；以及焊料凸塊，設置於所述下部接墊的底表面上。所述穿透結構可將所述上部接墊連接至所述互連線。所述固化層可包括：第一固化層，與所述半導體晶片中的一者的所述焊料凸塊的上部部分接觸；以及第二固化層，與所述半導體晶片中的所述一者的所述焊料凸塊的下部部分接觸。所述第一固化層可包含光固化劑，且所述第二固化層可包含熱固化劑。
圖1是根據實施例的半導體封裝的剖視圖。圖2是圖1所示部分A的放大剖視圖。
參照圖1，半導體封裝1可包括晶片堆疊ST、中介層基板300、模製層500及外連接端子400。晶片堆疊ST中的每一者可包括垂直地且交替地堆疊的多個半導體晶片200與多個固化層TL。
中介層基板300可包括中間層310、導電支柱320、中介層絕緣層330、內部線340、外端子接墊350及晶片連接接墊360。中間層310可包括多個堆疊的層。晶片連接接墊360可設置於中間層310的頂表面上，且可連接至晶片堆疊ST。內部線340可設置於中介層絕緣層330中，且可連接至外端子接墊350。導電支柱320可被設置成穿透中間層310，以將晶片連接接墊360連接至內部線340。在本說明書中，表達「兩個元件彼此電性連接或電性耦合」意指所述元件彼此直接連接或直接耦合，或者藉由其他導電元件彼此間接連接或間接耦合。表達「元件電性連接至中介層基板300」意指所述元件電性連接至內部線340。外端子接墊350、內部線340、導電支柱320及晶片連接接墊360可由至少一種金屬材料（例如，銅、鋁、鎢及/或鈦中的至少一者）形成或者包含至少一種金屬材料（例如，銅、鋁、鎢及/或鈦中的至少一者）。在實施例中，中介層基板300可為印刷電路板（printed circuit board，PCB）。作為另一選擇，可使用重佈線層作為中介層基板300。
外連接端子400可設置於中介層基板300的底表面上。詳言之，外連接端子400可分別設置於中介層基板300的外端子接墊350的底表面上。外連接端子400可包括焊料球（solder ball）。外連接端子400可由至少一種焊料材料（solder material）（例如，錫（Sn）、銀（Ag）、鋅（Zn）及/或其合金中的至少一者）形成或者包含至少一種焊料材料（例如，錫（Sn）、銀（Ag）、鋅（Zn）及/或其合金中的至少一者）。
晶片堆疊ST可安裝於中介層基板300上，例如，晶片堆疊ST可沿第一方向D1彼此間隔開。模製層500可設置於中介層基板300的頂表面上，以填充晶片堆疊ST中鄰近的晶片堆疊ST之間的間隙區。模製層500可保護晶片堆疊ST免受外部衝擊，且可將晶片堆疊ST與外部電性分隔開。為簡單起見，以下說明將提及僅一個晶片堆疊ST。
晶片堆疊ST可包括例如沿第二方向D2垂直地堆疊的半導體晶片200與固化層TL。固化層TL可夾置於半導體晶片200之間，例如，一個固化層TL可位於沿第二方向D2彼此鄰近的兩個半導體晶片200之間以及中介層基板300與半導體晶片200中的最下一者之間。為簡單起見，以下說明將提及僅一個半導體晶片200及僅一個固化層TL。
半導體晶片200可包括高頻寬記憶體（high bandwidth memory，HBM）晶片。半導體晶片200可包括半導體基板210、穿透結構220、電路絕緣層230、互連線240、下部接墊250、焊料凸塊260及上部接墊270。
半導體基板210可由半導體材料（例如，矽、鍺或矽鍺）形成或者包含半導體材料（例如，矽、鍺或矽鍺）。半導體基板210可具有彼此相對的底表面與頂表面，例如，半導體基板210的底表面可面對中介層基板300。
電路絕緣層230及互連線240可設置於半導體基板210的底表面上。積體電路可設置於電路絕緣層230中。積體電路可設置於半導體基板210的底表面上，且可包括電晶體。電路絕緣層230可由例如氧化矽、氮化矽或氮氧化矽中的至少一者形成或者包含例如氧化矽、氮化矽或氮氧化矽中的至少一者。互連線240可電性連接至積體電路及穿透結構220。互連線240可由至少一種導電材料（例如，銅及/或鎢中的至少一者）形成或者包含至少一種導電材料（例如，銅及/或鎢中的至少一者）。電路絕緣層230的底表面230b可充當半導體晶片200的底表面230b。作為實例，如圖2中所示，電路絕緣層230的底表面230b可與下部接墊250的底表面250b共面。在另一實例中，電路絕緣層230的底表面230b可位於高於下部接墊250的底表面250b的水平高度處。
上部接墊270可設置於半導體基板210的頂表面上。上部接墊270可連接至穿透結構220。下部接墊250可設置於電路絕緣層230的底表面上。下部接墊250可連接至焊料凸塊260。上部接墊270及下部接墊250可由至少一種導電材料（例如，鋁、金及/或銅中的至少一者）形成或者包含至少一種導電材料（例如，鋁、金及/或銅中的至少一者）。在實施例中，半導體封裝1中可設置有多個上部接墊270及多個下部接墊250。
穿透結構220可設置於半導體基板210中。舉例而言，穿透結構220可被設置成穿透例如半導體基板210的整個厚度。穿透結構220可藉由互連線240電性連接至下部接墊250或積體電路。穿透結構220可由至少一種導電材料（例如，銅、鈦或鎢中的至少一者）形成或者包含至少一種導電材料（例如，銅、鈦或鎢中的至少一者）。在實施例中，可提供多個穿透結構220。
焊料凸塊260可分別設置於下部接墊250的底表面上。焊料凸塊260可包括例如焊料球、焊料凸塊、焊料柱或其任意組合。焊料凸塊260可由至少一種導電材料（例如，錫、鉛、銀及其合金中的至少一者）形成或者包含至少一種導電材料（例如，錫、鉛、銀及其合金中的至少一者）。焊料凸塊260可藉由互連線240連接至積體電路或穿透結構220。
晶片堆疊ST中的每一者的半導體晶片200可例如包括例如沿第二方向D2彼此鄰近設置的至少下部半導體晶片200與上部半導體晶片200。舉例而言，如圖1中所示，晶片堆疊ST中的每一者可包括沿第二方向D2堆疊於彼此頂上的多個半導體晶片200（例如，四個半導體晶片200），固化層TL與所述多個半導體晶片200（例如，四個半導體晶片200）交替佈置。上部半導體晶片200可設置於下部半導體晶片200上。上部半導體晶片200的焊料凸塊260可電性連接至且分別連接至下部半導體晶片200的上部接墊270。
在下文中，將參照圖2更詳細地闡述固化層TL。
參照圖1及圖2，固化層TL中的一者可夾置於下部半導體晶片200與上部半導體晶片200之間，即，夾置於堆疊於彼此頂上的兩個半導體晶片200之間。固化層TL可被設置成填充下部半導體晶片200與上部半導體晶片200之間的間隙區。固化層TL亦可被設置成環繞例如上部半導體晶片200的焊料凸塊260中的每一者的整個邊緣（perimeter）260c。固化層     TL可包括第一固化層120及夾置於第一固化層120與下部半導體晶片的頂表面之間的第二固化層130。
第一固化層120可設置於第二固化層130與上部半導體晶片200的底表面230b之間。第一固化層120可被設置成與上部半導體晶片200的焊料凸塊260的上部部分、上部半導體晶片200的下部接墊250的底表面250b的至少部分以及電路絕緣層230的底表面230b接觸。第一固化層120在第二方向D2上的厚度H1的範圍可介於0.1微米至20微米。在本說明書中，第一方向D1可為平行於中介層基板300的頂表面的方向，且第二方向D2可為垂直於中介層基板300的頂表面的方向。
第一固化層120可包含第一聚合物樹脂及第一填料顆粒。第一固化層120可更包含第一光固化劑及第一熱固化劑中的至少一者。第一聚合物樹脂可包括例如丙烯酸酯系聚合物、環氧系聚合物及/或聚(馬來醯亞胺)系聚合物。第一填料顆粒可包括例如二氧化矽顆粒及/或氧化鋁顆粒。以第一固化層120的總重量計，第一填料顆粒在第一固化層120中的含量的範圍可介於約20重量%（wt%）至約70重量%。第一填料顆粒可具有範圍介於約10奈米至約10微米的平均寬度（例如，直徑）。第一光固化劑可為光引發劑（photo-initiator）。第一光固化劑在第一固化層120中的含量的範圍可介於約0.1份/百份樹脂（parts per hundred resin，phr）至約5份/百份樹脂（phr），例如，每百重量份的第一聚合物樹脂約0.1份至約5份。第一光固化劑可包括例如偶氮化合物、偶氮二異丁腈（Azobisisobutyronitrile，AIBN）、過氧化苯甲醯、豔佳固（Irgacure）第184號、豔佳固第651號、豔佳固第819號、豔佳固第651號、豔佳固第784號、豔佳固第907號、豔佳固第2959號、豔佳固第754號或類似物。舉例而言，第一熱固化劑可包括過氧化物系材料。
第二固化層130可與上部半導體晶片200的焊料凸塊260的下部部分、下部半導體晶片200的上部接墊270的頂表面270a的至少部分及側表面以及半導體基板210的頂表面接觸。第二固化層130在第二方向D2上的厚度H2的範圍可介於約0.1微米至約20微米。
第二固化層130可由不同於第一固化層120的材料的材料形成或者包含不同於第一固化層120的材料的材料。舉例而言，第二固化層130可包含第二聚合物樹脂、第二填料顆粒及第二熱固化劑。第二聚合物樹脂可與上述第一固化層120的第一聚合物樹脂實質上相同。第二固化層130中的第二填料顆粒可與上述第一固化層120中的第一填料顆粒實質上相同。第二熱固化劑可由胺系材料中的至少一者（例如，咪唑）形成或者包括胺系材料中的至少一者（例如，咪唑）。第二熱固化劑在第二固化層130中的含量的範圍可介於約1份/百份樹脂至約30份/百份樹脂，例如，每百重量份的第二聚合物樹脂約1份至約30份。
第一固化層120與第二固化層130之間的介面可為可觀察的或不可觀察的。在其中第一固化層120與第二固化層130之間的介面為可觀察（例如，視覺上可檢測）的情形中，第一固化層120與第二固化層130之間的介面可位於上部半導體晶片200的焊料凸塊260的頂表面與底表面之間的水平高度處。焊料凸塊260在第二方向D2上的高度H3的範圍可介於約0.5微米至約10微米。第一固化層120的厚度H1對焊料凸塊260的高度H3的比率的範圍可介於約0.1至約1，且第二固化層130的厚度H2對焊料凸塊260的高度H3的比率的範圍可介於約0.1至約1。
圖3至圖6及圖8是根據實施例的製作半導體封裝的方法中的階段的剖視圖。圖7是圖6所示部分B的放大剖視圖。
參照圖3，可製備處理帶10。處理帶10可包括保護釋放膜110、初步固化層TLp、黏合層140及基底膜150。初步固化層TLp可包括第一初步固化層120p及第二初步固化層130p。處理帶10可用於堆疊半導體晶片200的製程中。
保護釋放膜110可由至少一種有機材料（例如，聚合物）形成或者包含至少一種有機材料（例如，聚合物）。舉例而言，保護釋放膜110可由聚對苯二甲酸乙二醇酯（polyethyleneterephthalate，PET）、聚烯烴（poly olefin，PO）、聚(乙烯醇)（poly(vinyl alcohol)，PVA）、聚(1-萘胺)（poly(1-naphthylamine)，PNA）、聚醚醚酮（polyether ether ketone，PEEK）及/或其混合物中的至少一者形成或者包含聚對苯二甲酸乙二醇酯（PET）、聚烯烴（PO）、聚(乙烯醇)（PVA）、聚(1-萘胺)（PNA）、聚醚醚酮（PEEK）及/或其混合物中的至少一者。保護釋放膜110可保護初步固化層TLp免受物理應力。所述物理應力可為外部影響，但實施例不限於此實例。可在使用處理帶10之前移除保護釋放膜110。將參照圖4至圖8闡述其中使用處理帶10的實例。
可在保護釋放膜110上設置初步固化層TLp。初步固化層TLp可包括第一初步固化層120p及第二初步固化層130p。可在保護釋放膜110上設置第一初步固化層120p，且可在第一初步固化層120p與黏合層140之間設置第二初步固化層130p。第一初步固化層120p可具有範圍介於約0.1微米至約20微米的厚度，且第二初步固化層130p可具有範圍介於約0.1微米至約20微米的厚度。第一初步固化層120p及第二初步固化層130p中的每一者可具有黏合性質與流體性質二者。
舉例而言，第一初步固化層120p可具有光固化性質，且第二初步固化層130p可具有熱固化性質。詳言之，第一初步固化層120p可包含第一聚合物樹脂、第一填料顆粒及第一光固化劑。第一聚合物樹脂可包括例如丙烯酸酯系聚合物、環氧系聚合物及/或聚(馬來醯亞胺)系聚合物。第一填料顆粒可包括例如二氧化矽顆粒及/或氧化鋁顆粒。以第一初步固化層120p的總重量計，第一填料顆粒在第一初步固化層120p中的含量的範圍可介於約20重量%至約70重量%。第一填料顆粒可具有範圍介於約10奈米至約10微米的平均寬度。第一光固化劑可為光引發劑。第一光固化劑在第一初步固化層120p中的含量的範圍可介於約0.1份/百份樹脂至約5份/百份樹脂。第一光固化劑可包括例如偶氮化合物、偶氮二異丁腈（AIBN）、過氧化苯甲醯、豔佳固第184號、豔佳固第651號、豔佳固第819號、豔佳固第651號、豔佳固第784號、豔佳固第907號、豔佳固第2959號、豔佳固第754號或類似物。在其中利用特定波長的光（例如，具有為約10奈米至約400奈米的波長的紫外（ultraviolet，UV）光）照射第一光固化劑的情形中，第一光固化劑可固化第一初步固化層120p。詳言之，當利用特定波長的光照射第一光固化劑時，第一光固化劑可產生引發（例如，活化）自由基聚合過程的自由基。隨著自由基的化學反應的進行，第一初步固化層120p可變得固化。
第二初步固化層130p可包含第二聚合物樹脂、第二填料顆粒及第二熱固化劑。第二聚合物樹脂可與上述第一聚合物樹脂實質上相同。第二初步固化層130p中的第二填料顆粒可與上述第一初步固化層120p中的第一填料顆粒實質上相同。第二熱固化劑可由胺系材料中的至少一者（例如，咪唑）形成或者包括胺系材料中的至少一者（例如，咪唑）。第二熱固化劑在第二初步固化層130p中的含量的範圍可介於約1份/百份樹脂至約30份/百份樹脂。當溫度在特定溫度範圍內時，可使用第二熱固化劑來固化第二初步固化層130p。舉例而言，若溫度在介於約150℃至約300℃的範圍內，則可藉由第二熱固化劑來固化第二初步固化層130p。
在另一實例中，第一初步固化層120p與第二初步固化層130p二者可具有熱固化性質，但其可具有彼此不同的固化溫度。相較於第二初步固化層130p而言，第一初步固化層120p可包含為不同種類的第一熱固化劑。因此，第一初步固化層120p的固化溫度可不同於第二初步固化層130p的固化溫度。舉例而言，第一初步固化層120p的固化溫度可低於第二初步固化層130p的固化溫度。
詳言之，第一初步固化層120p可包含第一聚合物樹脂、第一填料顆粒及第一熱固化劑。第一聚合物樹脂及第一填料顆粒可與上述者實質上相同。第一熱固化劑在第一初步固化層120p中的含量的範圍可介於約0.1份/百份樹脂至約5份/百份樹脂。在實施例中，第一熱固化劑可由過氧化物系材料中的至少一者形成或者包括過氧化物系材料中的至少一者。在特定溫度條件下，可使用所述光固化劑來固化第一初步固化層120p。舉例而言，當溫度在介於約80℃至約150℃的範圍內時，可藉由第一熱固化劑來固化第一初步固化層120p。
第二初步固化層130p可包含第二聚合物樹脂、第二填料顆粒及第二熱固化劑。第二聚合物樹脂可與上述第一聚合物樹脂實質上相同。第二初步固化層130p中的第二填料顆粒可與上述第一填料顆粒實質上相同。如上所述，第二熱固化劑可由胺系材料中的至少一者（例如，咪唑）形成或者包括胺系材料中的至少一者（例如，咪唑）。第二熱固化劑在第二初步固化層130p中的含量的範圍可介於約1份/百份樹脂至約30份/百份樹脂。當溫度在特定溫度範圍內時，可使用第二熱固化劑來固化第二初步固化層130p。舉例而言，若溫度在介於約150℃至約300℃的範圍內，則可藉由第二熱固化劑來固化第二初步固化層130p。
可在初步固化層TLp上設置黏合層140。黏合層140可為例如壓敏性黏合層。黏合層140可由光固化材料形成或者包含光固化材料，例如，所述光固化材料可呈非固化狀態。黏合層140中的光固化材料可包括聚合物，且所述聚合物可包含炔基及醇（-OH）基。舉例而言，黏合層140可由丙烯酸酯系材料中的至少一者（例如，丙烯酸酯聚合物）形成或者包含丙烯酸酯系材料中的至少一者（例如，丙烯酸酯聚合物）。黏合層140可更包含交聯劑、光固化劑或添加劑中的至少一者。添加劑可包括UV吸收劑或塗層整平劑（coating leveling agent）中的至少一者。UV吸收劑可包括具有芳環結構或共軛結構的材料。舉例而言，UV吸收劑可包括二苯甲酮及/或其衍生物。塗層整平劑可包括矽酮系表面活性劑中的至少一者。
可在黏合層140上設置基底膜150。基底膜150可由有機材料（例如，聚合物）中的至少一者形成或者包含有機材料（例如，聚合物）中的至少一者。舉例而言，基底膜150可由聚對苯二甲酸乙二醇酯（PET）、聚烯烴（PO）、聚(乙烯醇)（PVA）、聚(1-萘胺)（PNA）、聚醚醚酮（PEEK）及/或其混合物中的至少一者形成或者包含聚對苯二甲酸乙二醇酯（PET）、聚烯烴（PO）、聚(乙烯醇)（PVA）、聚(1-萘胺)（PNA）、聚醚醚酮（PEEK）及/或其混合物中的至少一者。在實施例中，基底膜150可由均聚物（homo-polymer）或共混聚合物（blend polymer）中的至少一者形成或者包含均聚物或共混聚合物中的至少一者。基底膜150可具有單層或多層結構。
參照圖4，可製備半導體晶片200。半導體晶片200可與參照圖2闡述的半導體晶片200實質上相同。可藉由自處理帶10移除保護釋放膜110來暴露出第一初步固化層120p（在圖3中）。可在半導體晶片200的底表面230b上設置被移除保護釋放膜110的處理帶10（在圖4中）。此處，可將半導體晶片200設置成使得底表面230b面對第一初步固化層120p。
詳言之，可以使得初步固化層TLp與焊料凸塊260及半導體晶片200的底表面230b接觸的方式將半導體晶片200貼合至第一初步固化層120p。處理帶10可覆蓋焊料凸塊260的表面。由於處理帶10的初步固化層TLp呈非固化狀態或者是軟的，因此焊料凸塊260可穿透初步固化層TLp。在實施例中，焊料凸塊260可穿透第一初步固化層120p以及第二初步固化層130p的部分，例如，焊料凸塊260可穿透整個第一初步固化層120p以及僅第二初步固化層130p的部分。因此，可將焊料凸塊260的部分放置於初步固化層TLp的內部部分中，例如使得位於下部接墊250上方的焊料凸塊260的表面可被初步固化層TLp完全覆蓋。在將處理帶10貼合至半導體晶片200之後，例如，在將初步固化層TLp貼合至半導體晶片200之後，可自處理帶10移除黏合層140及基底膜150，例如使得暴露出第二初步固化層130p的表面。
參照圖5，可將光L照射至處理帶10上，即照射至半導體晶片200上的初步固化層TLp上。光L可具有範圍介於約10奈米至約400奈米的波長，或者可為紫外光。舉例而言，可將光L照射至初步固化層TLp上，例如照射至被暴露出的第二初步固化層130p上。在其中第一初步固化層120p包含光固化劑的情形中，可藉由光L的照射以光固化方式來固化第一初步固化層120p，以形成第一固化層120。由於第二初步固化層130p不包含光引發劑，因此第二初步固化層130p可能不會藉由光L的照射而固化。
參照圖6，可製備載物台STG。載物台STG可為由金屬材料形成或者包含金屬材料的平板。載物台STG可包括設置於載物台STG中且用於調節載物台STG的表面溫度的溫度調節系統。可在載物台STG上放置中介層基板300。中介層基板300可與參照圖1闡述的中介層基板300實質上相同。可在中介層基板300上設置貼合有參照圖5闡述的第一固化層120及第二初步固化層130p的半導體晶片200。此處，可以使得焊料凸塊260例如沿第二方向D2與中介層基板300的晶片連接接墊360垂直對準的方式設置半導體晶片200。由於第二初步固化層130p具有黏合性質，因此第二初步固化層130p可貼合至中介層基板300的頂表面，且可物理固定至中介層基板300。
藉由重複進行參照圖4至圖5闡述的製程，可在貼合至中介層基板300的半導體晶片200上設置貼合有第一固化層120及第二初步固化層130p的附加半導體晶片200。由於第二初步固化層130p具有黏合性質，因此半導體晶片200中垂直鄰近的半導體晶片200可彼此物理固定。此處，如圖7中所示，上部半導體晶片200的焊料凸塊260可與下部半導體晶片200的上部接墊270的頂表面270a的至少部分接觸。舉例而言，參照圖6至圖7，當第二初步固化層130p被推向下部半導體晶片200以黏合至下部半導體晶片200時，焊料凸塊260可延伸穿過第二初步固化層130p以至少局部地接觸下部半導體晶片200的上部接墊270的頂表面270a。
可藉由數次重複進行堆疊製程來形成初步晶片堆疊STp。可將初步晶片堆疊STp設置成彼此水平間隔開。在重複進行堆疊製程的同時，載物台STG的表面溫度可維持在例如約50℃。
參照圖8，可在初步晶片堆疊STp上製備壓力頭HD。壓力頭HD可為由金屬材料形成或者包含金屬材料的平板。可將壓力頭HD被配置成在垂直方向上可移動，且壓力頭HD可包括用於調節壓力頭HD的表面溫度的溫度調節系統。可垂直移動壓力頭HD以執行第一按壓及加熱製程。第一按壓及加熱製程可包括對初步晶片堆疊STp施加熱量與壓力二者。詳言之，在第一按壓及加熱製程中，可控制壓力頭HD在垂直方向上對初步晶片堆疊STp施予壓力。在施予壓力期間，可將壓力頭HD的溫度維持在介於約200℃至約400℃的範圍內，且可將載物台STG的溫度維持在約70℃。由於對壓力頭HD及載物台STG的加熱，初步晶片堆疊STp附近的溫度可被增加成高於第二初步固化層130p中的熱固化劑的固化溫度。因此，如圖2中所示，焊料凸塊260可在上部半導體晶片200的下部接墊250與下部半導體晶片200的上部接墊270之間在側向方向上延伸，例如，在第一方向D1上延伸以增加焊料凸塊260與上部接墊270之間的接觸面積，且可例如在第二方向D2上對彼此鄰近的下部接墊250與上部接墊270進行連接。另外，可藉由在第二初步固化層130p中進行的固化反應（例如，由於壓力頭HD的溫度）來形成第二固化層130，且可藉由固化層TL更魯棒地固定半導體晶片200以形成晶片堆疊ST。
根據實施例，在第一按壓及加熱製程之前，可以光固化方式固化第一初步固化層120p以形成第一固化層120。在其中焊料凸塊260在第一按壓及加熱製程中在側向上膨脹的情形中，由於第一固化層120是硬的，因此焊料凸塊260的與第一固化層120接觸的上部部分可能不會在側向方向上膨脹或者可能幾乎不會膨脹，例如使得第二初步固化層130p中的焊料凸塊260的僅接觸上部接墊270的部分可能在側向上膨脹。因此，可降低焊料凸塊260中鄰近的焊料凸塊260之間可能當焊料凸塊260形成於高度積體的半導體封裝中時發生的短路故障的比率。
此外，一般而言，當使用壓力頭HD對彼此水平間隔開的初步晶片堆疊STp執行按壓及加熱製程時，例如相較於壓力頭HD的邊緣部分而言，非均勻的壓力及熱量可能潛在地施加至壓力頭HD的中心部。舉例而言，例如相較於鄰近於壓力頭HD的邊緣部分的初步晶片堆疊STp而言，鄰近於壓力頭HD的中心部分的初步晶片堆疊STp可能經歷較高的壓力及較高的溫度，藉此潛在地導致焊料凸塊的進一步側向膨脹。相反，根據實施例，由於焊料凸塊260的側向膨脹受到先前硬化的第一固化層120的約束，因此可防止或實質上抑制焊料凸塊260的側向膨脹。因此，即使當對初步晶片堆疊STp執行的按壓及加熱製程中存在壓力及熱量的非均勻性（此是由壓力頭HD上的位置變化導致），亦可防止或實質上最小化壓力頭HD的中心部分中的焊料凸塊260中鄰近的焊料凸塊260之間的短路。
重新參照圖1，可在中介層基板300上形成模製層500。模製層500可由環氧系聚合物中的至少一者形成或者包含環氧系聚合物中的至少一者。模製層500可填充晶片堆疊ST之間的間隙區，且可覆蓋晶片堆疊ST中的每一者的側表面及中介層基板300的頂表面。可在中介層基板300的外端子接墊350的底表面上分別形成外連接端子400。因此，可製作根據實施例的半導體封裝1。
圖9至圖12是根據實施例的製作半導體封裝的方法中的階段的剖視圖。為易於說明，先前闡述的元件可由相同的參考編號辨識，而不再對其予以贅述。
參照圖9，可藉由與先前參照圖3至圖5所述者相同的方法來製備半導體晶片200，且在此種情形中，可將第一固化層120及第二初步固化層130p貼合至半導體晶片200的底表面230b。可製備中介層基板300。中介層基板300可與參照圖1闡述的中介層基板300實質上相同。可在中介層基板300上堆疊貼合有第一固化層120及第二初步固化層130p的半導體晶片200。可將半導體晶片200設置成彼此水平間隔開，且可將半導體晶片200設置於中介層基板300上的同一水平高度處。
參照圖10，可在彼此水平間隔開的半導體晶片200上設置壓力頭HD。可垂直移動壓力頭HD以執行第一按壓及加熱製程。換言之，可垂直移動壓力頭HD，以向半導體晶片200的頂表面施加熱量及壓力。此處，可將壓力頭HD的溫度維持在介於約200℃至約400℃的範圍內，且可將載物台STG的溫度維持至約70℃。由於對壓力頭HD及載物台STG的加熱，因此半導體晶片200附近的溫度可被增加成高於第二初步固化層130p中的熱固化劑的固化溫度。因此，可藉由在第二初步固化層130p中進行的固化反應來形成第二固化層130，且可藉由固化層TL將半導體晶片200固定地貼合至中介層基板300。
參照圖11，可在固定地貼合至中介層基板300的半導體晶片200上分別堆疊貼合有第一固化層120及第二初步固化層130p的半導體晶片200。由於第二初步固化層130p具有黏合性質，因此半導體晶片200可物理固定至固定地貼合至中介層基板300的半導體晶片200。
參照圖12，可在被堆疊以形成雙層結構的半導體晶片200上設置壓力頭HD。可垂直移動壓力頭HD以執行第二按壓及加熱製程。換言之，可垂直移動壓力頭HD，以向被堆疊以形成雙層結構的半導體晶片200的頂表面施加熱量及壓力。此處，可將壓力頭HD的溫度維持在介於約200℃至約400℃的範圍內，且可將載物台STG的溫度維持在約70℃。由於對壓力頭HD及載物台STG的加熱，因此半導體晶片200中的最上一者附近的溫度可被增加成高於用於半導體晶片200中的最上一者的第二初步固化層130p中的熱固化劑的固化溫度。因此，可藉由在用於半導體晶片200中的最上一者的第二初步固化層130p中進行的固化反應來形成第二固化層130，且可藉由固化層TL將半導體晶片200中的最上一者固定地貼合至半導體晶片200中的最下一者。
可使用與參照圖11及圖12所述者實質上相同的方法重複進行半導體晶片200的堆疊製程以及使用壓力頭HD的按壓及加熱製程，且在此種情形中，可將晶片堆疊ST形成為具有多層結構。此後，可藉由使用參照圖6闡述的方法形成模製層500及外連接端子400來製作根據實施例的半導體封裝1。
圖13至圖15是示出根據實施例的製作半導體封裝的方法中的階段的剖視圖。為易於說明，先前闡述的元件可由相同的參考編號辨識，而不再對其予以贅述。
參照圖13，可藉由與參照圖3及圖4所述者相同的方法來製備半導體晶片200，且在此種情形中，可將初步固化層TLp貼合至半導體晶片200的底表面230b。可製備中介層基板300。中介層基板300可與參照圖1闡述的中介層基板300實質上相同。可藉由在中介層基板300上堆疊貼合有初步固化層TLp的半導體晶片200來形成初步晶片堆疊STp。初步晶片堆疊STp中的每一者的半導體晶片200可彼此垂直對準，且初步晶片堆疊STp可彼此水平間隔開。
參照圖14，可在初步晶片堆疊STp上設置壓力頭HD。可垂直移動壓力頭HD以執行第一按壓及加熱製程。第一按壓及加熱製程可包括向初步晶片堆疊STp施加熱量與壓力二者。在第一按壓及加熱製程中，可將壓力頭HD的溫度維持在介於約110℃至約120℃的範圍內，且可將載物台STG的溫度維持在約50℃。由於對壓力頭HD及載物台STG的加熱，初步晶片堆疊STp附近的區可維持在高於或等於第一初步固化層120p中的熱固化劑的固化溫度且低於或等於第二初步固化層130p中的熱固化劑的固化溫度的溫度。因此，可藉由在第一初步固化層120p中進行的固化反應來形成第一固化層120。此時，第二初步固化層130p可能不會被固化。
參照圖15，在第一按壓及加熱製程之後，可對初步晶片堆疊STp執行第二按壓及加熱製程。第二按壓及加熱製程可包括向初步晶片堆疊STp施加熱量與壓力二者。在第二按壓及加熱製程中，可將壓力頭HD的溫度維持在約320℃，且可將載物台STG的溫度維持在約70℃。由於對壓力頭HD及載物台STG的加熱，初步晶片堆疊STp附近的溫度可被維持成等於或高於第二初步固化層130p中的熱固化劑的固化溫度。因此，可藉由在第二初步固化層130p中進行的固化反應來形成第二固化層130，且可藉由固化層TL更魯棒地固定半導體晶片200以形成晶片堆疊ST。此後，可藉由使用參照圖6闡述的方法形成模製層500及外連接端子400來製作根據實施例的半導體封裝1。
藉由總結及回顧，實施例提供具有改善的可靠性的半導體封裝。即，根據實施例，可在垂直堆疊的半導體晶片之間設置固化層。固化層可具有包括第一固化層及第二固化層的雙層結構。第一固化層可與焊料凸塊的上部部分接觸，且可首先被固化，且因此，第一固化層可防止具有精細節距的焊料凸塊在側向方向上膨脹。因此，可防止可能當具有精細節距的焊料凸塊彼此連接時發生的短路故障。
本文中已揭露示例性實施例，且儘管採用特定用語，然而該些用語僅以一般性及闡述性意義加以使用及解釋，且並非用於限制目的。在一些情況下，如在本申請案提出申請之前對於此項技術中具有通常知識者而言顯而易見，除非另外明確地指示，否則結合特定實施例闡述的特徵、特性及/或元件可單獨使用或與結合其他實施例闡述的特徵、特性及/或元件組合使用。因此，熟習此項技術者應理解，在不背離以下申請專利範圍中所述的本發明的精神及範圍的條件下，可進行形式及細節上的各種改變。
1:半導體封裝 10:處理帶 110:保護釋放膜 120:第一固化層 120p:第一初步固化層 130:第二固化層 130p:第二初步固化層 140:黏合層 150:基底膜 200:上部半導體晶片/下部半導體晶片/半導體晶片 210:半導體基板 220:穿透結構 230:電路絕緣層 230b、250b:底表面 240:互連線 250:下部接墊 260:焊料凸塊 260c:邊緣 270:上部接墊 270a:頂表面 300:中介層基板 310:中間層 320:導電支柱 330:中介層絕緣層 340:內部線 350:外端子接墊 360:晶片連接接墊 400:外連接端子 500:模製層 A、B:部分 D1:第一方向 D2:第二方向 H1、H2:厚度 H3:高度 HD:壓力頭 L:光 ST:晶片堆疊 STp:初步晶片堆疊 STG:載物台 TL:固化層 TLp:初步固化層
藉由參照隨附圖式詳細闡述示例性實施例，各特徵對於熟習此項技術者而言將變得顯而易見，在隨附圖式中： 圖1是根據實施例的半導體封裝的剖視圖。 圖2是圖1所示部分A的放大剖視圖。 圖3至圖6及圖8是根據實施例的製作半導體封裝的方法中的階段的剖視圖。 圖7是圖6所示部分B的放大剖視圖。 圖9至圖12是根據實施例的製作半導體封裝的方法中的階段的剖視圖。 圖13至圖15是根據實施例的製作半導體封裝的方法中的階段的剖視圖。
1:半導體封裝
120:第一固化層
130:第二固化層
200:上部半導體晶片/下部半導體晶片/半導體晶片
210:半導體基板
220:穿透結構
230:電路絕緣層
240:互連線
250:下部接墊
260:焊料凸塊
270:上部接墊
300:中介層基板
310:中間層
320:導電支柱
330:中介層絕緣層
340:內部線
350:外端子接墊
360:晶片連接接墊
400:外連接端子
500:模製層
A:部分
D1:第一方向
D2:第二方向
ST:晶片堆疊
TL:固化層

Claims (20)

  1. 一種半導體封裝，包括： 下部半導體晶片，所述下部半導體晶片包括下部半導體基板及在所述下部半導體基板的頂表面上的上部接墊； 上部半導體晶片，堆疊於所述下部半導體晶片上，所述上部半導體晶片包括上部半導體基板及在所述上部半導體基板的底表面上的焊料凸塊；以及 固化層，在所述下部半導體晶片與所述上部半導體晶片之間，所述固化層包括： 第一固化層，鄰近於所述上部半導體晶片，所述第一固化層包含第一光固化劑；以及 第二固化層，在所述第一固化層與所述下部半導體基板的所述頂表面之間，所述第二固化層包含第一熱固化劑。
  2. 如請求項1所述的半導體封裝，其中所述第一固化層更包含第二熱固化劑。
  3. 如請求項2所述的半導體封裝，其中所述第一光固化劑包括過氧化物系材料，且所述第二熱固化劑包括胺系材料。
  4. 如請求項1所述的半導體封裝，其中所述第一光固化劑藉由具有介於10奈米至400奈米的波長的光來活化。
  5. 如請求項1所述的半導體封裝，其中所述第一固化層及所述第二固化層中的每一者的厚度為0.1微米至20微米。
  6. 如請求項1所述的半導體封裝，其中以所述第一固化層中的聚合物樹脂的總重量計，所述第一光固化劑在所述第一固化層中的含量為0.1份/百份樹脂至5份/百份樹脂。
  7. 如請求項1所述的半導體封裝，其中： 所述上部半導體晶片更包括在所述焊料凸塊的頂表面上的下部接墊，且 所述第一固化層與所述焊料凸塊中的每一者的上部部分及所述下部接墊中的每一者的底表面的至少部分接觸。
  8. 如請求項1所述的半導體封裝，其中所述第二固化層與所述焊料凸塊中的每一者的下部部分及所述下部半導體晶片的所述上部接墊中的每一者的頂表面的至少部分接觸。
  9. 如請求項1所述的半導體封裝，其中所述第一固化層及所述第二固化層獨立地包含環氧系聚合物、聚(馬來醯亞胺)系聚合物或丙烯酸酯系聚合物。
  10. 如請求項1所述的半導體封裝，其中所述固化層更包含填料顆粒，且所述填料顆粒的平均寬度為10奈米至10微米。
  11. 如請求項1所述的半導體封裝，其中所述第二固化層的厚度對所述焊料凸塊中的一者的高度的比率為0.1至1。
  12. 一種半導體封裝，包括： 下部半導體晶片，所述下部半導體晶片包括下部半導體基板及在所述下部半導體基板的頂表面上的上部接墊； 上部半導體晶片，堆疊於所述下部半導體晶片上，所述上部半導體晶片包括上部半導體基板及在所述上部半導體基板的底表面上的焊料凸塊；以及 固化層，在所述下部半導體晶片與所述上部半導體晶片之間，所述固化層包括： 第一固化層，鄰近於所述上部半導體晶片，所述第一固化層包含第一熱固化劑；以及 第二固化層，在所述第一固化層與所述下部半導體基板的所述頂表面之間，所述第二固化層包含第二熱固化劑，且所述第一熱固化劑的固化溫度低於所述第二熱固化劑的固化溫度。
  13. 如請求項12所述的半導體封裝，其中所述第一熱固化劑包括過氧化物系材料，且所述第二熱固化劑包括胺系材料。
  14. 如請求項12所述的半導體封裝，其中所述第二固化層的厚度為0.1微米至20微米。
  15. 如請求項12所述的半導體封裝，其中所述第一固化層的厚度對所述焊料凸塊中的一者的高度的比率為0.1至1。
  16. 如請求項12所述的半導體封裝，其中所述第一熱固化劑的所述固化溫度為80℃至150℃，且所述第二熱固化劑的所述固化溫度為150℃至300℃。
  17. 如請求項12所述的半導體封裝，其中所述固化層更在所述第一固化層及所述第二固化層中的每一者中包含填料顆粒，以所述第一固化層及所述第二固化層中的每一者的總重量計，所述填料顆粒在所述第一固化層及所述第二固化層中的每一者中的含量分別為20重量%至70重量%。
  18. 如請求項17所述的半導體封裝，其中所述填料顆粒包括二氧化矽顆粒或氧化鋁顆粒，所述填料顆粒的平均寬度為10奈米至10微米。
  19. 如請求項12所述的半導體封裝，其中所述第一固化層與所述第二固化層之間的介面在所述焊料凸塊中的每一者的頂表面與底表面之間的水平高度處。
  20. 一種半導體封裝，包括： 中介層基板； 外連接端子，在所述中介層基板的底表面上； 晶片堆疊，在所述中介層基板上，所述晶片堆疊中的每一者包括垂直地且交替地堆疊的半導體晶片與固化層；以及 模製層，在所述中介層基板上，以覆蓋所述晶片堆疊的側表面及所述中介層基板的頂表面， 其中所述半導體晶片中的每一者包括： 半導體基板； 穿透結構，穿透所述半導體基板； 電路絕緣層及互連線，在所述半導體基板的底表面上； 下部接墊，連接至所述互連線； 上部接墊，在所述半導體基板上，所述穿透結構將所述上部接墊連接至所述互連線；以及 焊料凸塊，在所述下部接墊的底表面上，且 其中所述固化層中的每一者包括： 第一固化層，與所述半導體晶片中的一者的所述焊料凸塊的上部部分接觸，所述第一固化層包含光固化劑；以及 第二固化層，與所述半導體晶片中的所述一者的所述焊料凸塊的下部部分接觸，所述第二固化層包含熱固化劑。
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JP6504263B2 (ja) * 2015-10-29 2019-04-24 日立化成株式会社 半導体用接着剤、半導体装置及びそれを製造する方法

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