TWI714653B - 半導體用接著劑、製造半導體裝置的方法 - Google Patents
半導體用接著劑、製造半導體裝置的方法 Download PDFInfo
- Publication number
- TWI714653B TWI714653B TW105134663A TW105134663A TWI714653B TW I714653 B TWI714653 B TW I714653B TW 105134663 A TW105134663 A TW 105134663A TW 105134663 A TW105134663 A TW 105134663A TW I714653 B TWI714653 B TW I714653B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor wafer
- semiconductor
- substrate
- crimping
- connection
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 569
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 91
- 239000000853 adhesive Substances 0.000 title claims description 91
- 230000001070 adhesive effect Effects 0.000 title claims description 90
- 235000012431 wafers Nutrition 0.000 claims abstract description 332
- 238000002788 crimping Methods 0.000 claims abstract description 224
- 239000000758 substrate Substances 0.000 claims abstract description 133
- 238000003825 pressing Methods 0.000 claims abstract description 132
- 238000010438 heat treatment Methods 0.000 claims abstract description 96
- 239000012790 adhesive layer Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims description 92
- 239000002184 metal Substances 0.000 claims description 92
- 229920005989 resin Polymers 0.000 claims description 85
- 239000011347 resin Substances 0.000 claims description 85
- 229920001187 thermosetting polymer Polymers 0.000 claims description 83
- 238000002844 melting Methods 0.000 claims description 64
- 230000008018 melting Effects 0.000 claims description 64
- 239000011342 resin composition Substances 0.000 claims description 58
- 239000002313 adhesive film Substances 0.000 claims description 47
- 239000003795 chemical substances by application Substances 0.000 claims description 45
- 239000007769 metal material Substances 0.000 claims description 41
- -1 silanol compound Chemical class 0.000 claims description 34
- 229920000642 polymer Polymers 0.000 claims description 30
- 239000004848 polyfunctional curative Substances 0.000 claims description 27
- 238000003860 storage Methods 0.000 claims description 26
- 239000007787 solid Substances 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 22
- 238000006073 displacement reaction Methods 0.000 claims description 20
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 15
- 230000004907 flux Effects 0.000 claims description 13
- 239000000155 melt Substances 0.000 claims description 10
- 125000002947 alkylene group Chemical group 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 230000006835 compression Effects 0.000 claims description 6
- 238000007906 compression Methods 0.000 claims description 6
- 230000009477 glass transition Effects 0.000 claims description 5
- 238000012669 compression test Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 description 64
- 239000000945 filler Substances 0.000 description 51
- 229920000647 polyepoxide Polymers 0.000 description 48
- 239000003822 epoxy resin Substances 0.000 description 42
- 229920000178 Acrylic resin Polymers 0.000 description 40
- 239000004925 Acrylic resin Substances 0.000 description 40
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 238000011156 evaluation Methods 0.000 description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
- 239000011324 bead Substances 0.000 description 23
- 239000010949 copper Substances 0.000 description 23
- 229910052802 copper Inorganic materials 0.000 description 23
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 21
- 150000001875 compounds Chemical class 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 20
- 239000000377 silicon dioxide Substances 0.000 description 20
- 239000011256 inorganic filler Substances 0.000 description 18
- 229910003475 inorganic filler Inorganic materials 0.000 description 18
- 239000002245 particle Substances 0.000 description 18
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 16
- 239000010931 gold Substances 0.000 description 16
- 238000005259 measurement Methods 0.000 description 15
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 13
- 238000001816 cooling Methods 0.000 description 13
- 239000013034 phenoxy resin Substances 0.000 description 13
- 229920006287 phenoxy resin Polymers 0.000 description 13
- 239000000047 product Substances 0.000 description 13
- 238000003756 stirring Methods 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 12
- 229920001721 polyimide Polymers 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 239000002966 varnish Substances 0.000 description 12
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 10
- 150000001412 amines Chemical class 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 9
- 229920000800 acrylic rubber Polymers 0.000 description 9
- 239000005011 phenolic resin Substances 0.000 description 9
- 229920000058 polyacrylate Polymers 0.000 description 9
- 239000009719 polyimide resin Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 150000008065 acid anhydrides Chemical class 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229920003986 novolac Polymers 0.000 description 8
- 150000001451 organic peroxides Chemical class 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 239000000654 additive Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000011135 tin Substances 0.000 description 7
- 239000011800 void material Substances 0.000 description 7
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000011295 pitch Substances 0.000 description 6
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 5
- WVUYYXUATWMVIT-UHFFFAOYSA-N 1-bromo-4-ethoxybenzene Chemical compound CCOC1=CC=C(Br)C=C1 WVUYYXUATWMVIT-UHFFFAOYSA-N 0.000 description 5
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 5
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 5
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 5
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 5
- 239000011258 core-shell material Substances 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000012766 organic filler Substances 0.000 description 5
- 239000011146 organic particle Substances 0.000 description 5
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 229920002050 silicone resin Polymers 0.000 description 5
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 5
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000004721 Polyphenylene oxide Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 4
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920000570 polyether Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- 230000004580 weight loss Effects 0.000 description 4
- CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 3
- FHKPLLOSJHHKNU-INIZCTEOSA-N [(3S)-3-[8-(1-ethyl-5-methylpyrazol-4-yl)-9-methylpurin-6-yl]oxypyrrolidin-1-yl]-(oxan-4-yl)methanone Chemical compound C(C)N1N=CC(=C1C)C=1N(C2=NC=NC(=C2N=1)O[C@@H]1CN(CC1)C(=O)C1CCOCC1)C FHKPLLOSJHHKNU-INIZCTEOSA-N 0.000 description 3
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 239000004643 cyanate ester Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002432 hydroperoxides Chemical class 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000002978 peroxides Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010526 radical polymerization reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 239000012756 surface treatment agent Substances 0.000 description 3
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 3
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- IHCCLXNEEPMSIO-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 IHCCLXNEEPMSIO-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 2
- UCCGHLMDDOUWAF-UHFFFAOYSA-N 2-phenylimidazole-1-carbonitrile Chemical compound N#CN1C=CN=C1C1=CC=CC=C1 UCCGHLMDDOUWAF-UHFFFAOYSA-N 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 2
- 101100255205 Caenorhabditis elegans rsa-2 gene Proteins 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- QCXXDZUWBAHYPA-UHFFFAOYSA-N OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.O=C1NC(=O)NC(=O)N1 Chemical class OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.O=C1NC(=O)NC(=O)N1 QCXXDZUWBAHYPA-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229920001646 UPILEX Polymers 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 2
- 239000011354 acetal resin Substances 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 2
- WWNGFHNQODFIEX-UHFFFAOYSA-N buta-1,3-diene;methyl 2-methylprop-2-enoate;styrene Chemical compound C=CC=C.COC(=O)C(C)=C.C=CC1=CC=CC=C1 WWNGFHNQODFIEX-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Natural products O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- IUQFGMCLWBGIIA-UHFFFAOYSA-N 2-(dimethylaminodiazenyl)benzoic acid Chemical compound CN(C)N=NC1=CC=CC=C1C(O)=O IUQFGMCLWBGIIA-UHFFFAOYSA-N 0.000 description 1
- JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- JMMZCWZIJXAGKW-UHFFFAOYSA-N 2-methylpent-2-ene Chemical compound CCC=C(C)C JMMZCWZIJXAGKW-UHFFFAOYSA-N 0.000 description 1
- GSKNLOOGBYYDHV-UHFFFAOYSA-N 2-methylphenol;naphthalen-1-ol Chemical compound CC1=CC=CC=C1O.C1=CC=C2C(O)=CC=CC2=C1 GSKNLOOGBYYDHV-UHFFFAOYSA-N 0.000 description 1
- RJIQELZAIWFNTQ-UHFFFAOYSA-N 2-phenyl-1h-imidazole;1,3,5-triazinane-2,4,6-trione Chemical compound O=C1NC(=O)NC(=O)N1.C1=CNC(C=2C=CC=CC=2)=N1 RJIQELZAIWFNTQ-UHFFFAOYSA-N 0.000 description 1
- UVOKEWIIBKIDIY-UHFFFAOYSA-N 2-phenyldiazenylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1N=NC1=CC=CC=C1 UVOKEWIIBKIDIY-UHFFFAOYSA-N 0.000 description 1
- BCHZICNRHXRCHY-UHFFFAOYSA-N 2h-oxazine Chemical compound N1OC=CC=C1 BCHZICNRHXRCHY-UHFFFAOYSA-N 0.000 description 1
- MGENSHRLAKPCSM-UHFFFAOYSA-N 3-methylcyclohexane-1,1,2,2-tetracarboxylic acid Chemical compound CC1CCCC(C(O)=O)(C(O)=O)C1(C(O)=O)C(O)=O MGENSHRLAKPCSM-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- JCYPECIVGRXBMO-UHFFFAOYSA-N 4-(dimethylamino)azobenzene Chemical compound C1=CC(N(C)C)=CC=C1N=NC1=CC=CC=C1 JCYPECIVGRXBMO-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- WTFUTSCZYYCBAY-SXBRIOAWSA-N 6-[(E)-C-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-N-hydroxycarbonimidoyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C/C(=N/O)/C1=CC2=C(NC(O2)=O)C=C1 WTFUTSCZYYCBAY-SXBRIOAWSA-N 0.000 description 1
- DFGKGUXTPFWHIX-UHFFFAOYSA-N 6-[2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]acetyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)C1=CC2=C(NC(O2)=O)C=C1 DFGKGUXTPFWHIX-UHFFFAOYSA-N 0.000 description 1
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- 229910000505 Al2TiO5 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229920009204 Methacrylate-butadiene-styrene Polymers 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- SJJISKLXUJVZOA-UHFFFAOYSA-N Solvent yellow 56 Chemical compound C1=CC(N(CC)CC)=CC=C1N=NC1=CC=CC=C1 SJJISKLXUJVZOA-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- SPMWUCYYMHVNFU-UHFFFAOYSA-N [O-]B([O-])Oc1ccc(F)cc1.c1ccc(cc1)[P+](c1ccccc1)(c1ccccc1)c1ccccc1.c1ccc(cc1)[P+](c1ccccc1)(c1ccccc1)c1ccccc1 Chemical compound [O-]B([O-])Oc1ccc(F)cc1.c1ccc(cc1)[P+](c1ccccc1)(c1ccccc1)c1ccccc1.c1ccc(cc1)[P+](c1ccccc1)(c1ccccc1)c1ccccc1 SPMWUCYYMHVNFU-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000008064 anhydrides Chemical group 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 150000001913 cyanates Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012933 diacyl peroxide Substances 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- JMLPVHXESHXUSV-UHFFFAOYSA-N dodecane-1,1-diamine Chemical compound CCCCCCCCCCCC(N)N JMLPVHXESHXUSV-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000004849 latent hardener Substances 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000003884 phenylalkyl group Chemical class 0.000 description 1
- 125000004344 phenylpropyl group Chemical group 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000000646 scanning calorimetry Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000005591 trimellitate group Chemical group 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05005—Structure
- H01L2224/05009—Bonding area integrally formed with a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/05111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/05113—Bismuth [Bi] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/05116—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/05611—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/05613—Bismuth [Bi] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/05616—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05655—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13113—Bismuth [Bi] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13116—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16237—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
- H01L2224/27334—Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75272—Oven
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/7532—Material of the auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/81411—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/81413—Bismuth [Bi] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/81416—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
- H01L2224/83204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/8321—Applying energy for connecting using a reflow oven
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/9205—Intermediate bonding steps, i.e. partial connection of the semiconductor or solid-state body during the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9211—Parallel connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
本發明揭示一種製造半導體裝置的方法,所述半導體裝置具備具備半導體晶片、基板及/或其他半導體晶片、以及介於該些之間的接著劑層。該方法包括:利用暫時壓接用按壓構件夾持具有半導體晶片,及基板、其他半導體晶片或半導體晶圓,及接著劑層的積層體,藉此進行加熱及加壓,由此將基板、其他半導體晶片或半導體晶圓暫時壓接於半導體晶片上的步驟;以及利用有別於暫時壓接用按壓構件所準備的正式壓接用按壓構件夾持積層體,藉此進行加熱及加壓,由此將半導體晶片的連接部與基板或其他半導體晶片的連接部連接的步驟。
Description
本發明是有關於一種半導體用接著劑、半導體裝置及其製造方法。
先前,於將半導體晶片與基板加以連接時,廣泛應用使用金線等金屬細線的打線接合方式,為了應對對於半導體裝置的高功能‧高積體‧高速化等的要求,於半導體晶片或基板上形成被稱為凸塊的導電性突起,而在半導體晶片與基板間直接進行連接的覆晶連接方式(FC(Flip Chip)連接方式)正在推廣。
作為覆晶連接方式,已知有使用焊料、錫、金、銀、銅等進行金屬接合的方法,施加超音波振動來進行金屬接合的方法,藉由樹脂的收縮力來保持機械式接觸的方法等,但就連接部的可靠性的觀點而言,通常為使用焊料、錫、金、銀、銅等進行金屬接合的方法。
例如,於半導體晶片與基板間的連接中,積極地用於球柵陣列(Ball Grid Array,BGA)、晶片尺寸封裝(Chip Size Package,CSP)等的板上晶片(Chip On Board,COB)型的連接方式亦為覆晶連接方式。覆晶連接方式亦廣泛地用於在半導體晶片上形成凸塊或配線,而於半導體晶片間進行連接的疊晶(Chip On Chip,COC)型的連接方式(例如,參照專利文獻1)。
於中央處理單元(Central Processing Unit,CPU)、微處理單元(Micro Processing Unit,MPU)等中所使用的區域陣列型的半導體封裝中,強烈要求高功能化。作為具體的要求,可列舉:晶片的大型化、針(凸塊、配線)數的增加、間距及間隙的高密度化。
於強烈要求進一步的小型化、薄型化、高功能化的封裝中,將所述連接方式加以積層・多段化的晶片堆疊型封裝、層疊封裝(Package On Package,POP)、矽穿孔(Through-Silicon Via,TSV)等亦開始廣泛普及。藉由配置成立體狀而非平面狀,可減小封裝,因此該些技術對於半導體的性能提升及雜訊減少、安裝面積的削減、省電力化亦有效,作為下一代的半導體配線技術而受到矚目。
就提升生產性的觀點而言,將半導體晶片壓接(連接)於晶圓上後加以個片化來製作半導體封裝的晶片堆疊晶圓(Chip On Wafer,COW)、將晶圓彼此壓接(連接)後加以個片化來製作半導體封裝的晶圓堆疊晶圓(Wafer On Wafer,WOW)亦受到矚目。進而,就相同的觀點而言,將多個晶片對位並暫時壓接於晶圓上或圖板上後,一次性地正式壓接所述多個晶片來確保連接的集團接合(gang bonding)方式亦受到矚目。集團接合方式亦用於所述TSV-PKG(Through Silicon Via-Package,TSV封裝)等。 現有技術文獻 專利文獻
專利文獻1:日本專利特開2008-294382號公報
[發明所欲解決之課題] 作為所述覆晶封裝的組裝方法,例如可考慮以下的方法。首先,利用夾頭自經切割的晶圓拾取供給有半導體用接著劑的半導體晶片,並供給至壓接用按壓構件。繼而,於晶片-晶片間或晶片-基板間進行對位後,將該些相互暫時壓接。而且,以達到晶片-晶片間或晶片-基板間的連接部的熔點以上的方式使壓接用按壓構件的溫度上升,而於連接部形成金屬結合,然後將晶片與晶片或晶片與基板相互正式壓接。藉由以上方式,可獲得1個覆晶封裝。其後,將於正式壓接時變成高溫的壓接用按壓構件冷卻後,利用壓接用按壓構件再次拾取半導體晶片。當於半導體晶片中供給有半導體用接著劑時,壓接用按壓構件吸附半導體晶片的與供給有半導體用接著劑的面(進行連接的面)相反側的面來拾取半導體晶片。
於自拾取至正式壓接為止的循環中,使用1個壓接用按壓構件,因此必須使壓接用按壓構件的溫度上升至連接部的金屬熔融的高溫為止、或下降至可拾取供給有半導體用接著劑的半導體晶片的低溫為止。但是,使壓接用按壓構件的溫度變化耗費時間,半導體裝置的製造時間變長,因此生產性容易下降。
於加熱至連接部的金屬的熔點以上來確保連接的覆晶連接方式中,正式壓接後的壓接用按壓構件變成高溫(若連接部的金屬為焊料,則例如為240℃以上)。此處,若不冷卻壓接用按壓構件而自夾頭拾取半導體晶片,則壓接用按壓構件的熱傳遞至夾頭上,夾頭本身的溫度上升,因此於拾取時產生不良情況且生產性容易下降。另外,於供給有半導體用接著劑的半導體晶片中,壓接用按壓構件的熱傳遞至夾頭上,半導體用接著劑的溫度因夾頭的熱而上升。藉此,若半導體用接著劑的黏性顯現,則半導體用接著劑容易附著於夾頭上,生產性容易下降。進而,若夾頭高溫化,則當自切割膠帶拾取經個片化的半導體晶片時,熱經由夾頭而傳導至切割膠帶上,拾取性下降且生產性容易下降。
一形態的本發明的目的是關於包括藉由金屬接合來將連接部彼此連接的半導體裝置的製造,且在於可實現更高的生產性。 [解決課題之手段]
本發明的一形態是有關於一種製造半導體裝置的方法,所述半導體裝置具備半導體晶片、基板及/或其他半導體晶片、以及介於該些之間的接著劑層,半導體晶片、基板、及其他半導體晶片分別包含具有由金屬材料形成的表面的連接部,半導體晶片的連接部與基板及/或所述其他半導體晶片的連接部藉由金屬接合而電性連接。該方法依次包括:利用對向的一對暫時壓接用按壓構件夾持具有半導體晶片,及基板、其他半導體晶片或包含相當於其他半導體晶片的部分的半導體晶圓,及配置於該些之間的接著劑層,且半導體晶片的連接部與基板或其他半導體晶片的連接部對向配置的積層體,藉此進行加熱及加壓,由此將基板、其他半導體晶片或半導體晶圓暫時壓接於半導體晶片上的步驟;以及利用有別於暫時壓接用按壓構件所準備的對向的一對正式壓接用按壓構件夾持積層體,藉此進行加熱及加壓,由此藉由金屬接合來將半導體晶片的連接部與基板或其他半導體晶片的連接部電性連接的步驟。於對積層體進行加熱及加壓時,將一對暫時壓接用按壓構件中的至少一個加熱至比形成半導體晶片的連接部的表面的金屬材料的熔點、及形成基板或其他半導體晶片的連接部的表面的金屬材料的熔點更低的溫度。於對積層體進行加熱及加壓時,將一對正式壓接用按壓構件中的至少一個加熱至形成半導體晶片的連接部的表面的金屬材料的熔點、或者形成基板或其他半導體晶片的連接部的表面的金屬材料的熔點中的至少任一個熔點以上的溫度。
利用不同的壓接用按壓構件實施以比形成連接部的表面的金屬材料的熔點更低的溫度進行暫時壓接的步驟、及以形成連接部的表面的金屬材料的熔點以上的溫度進行正式壓接的步驟,藉此可縮短各個壓接用按壓構件的加熱及冷卻所需的時間。因此,能夠以比利用1個壓接用按壓構件進行壓接更短的時間且生產性良好地製造半導體裝置。其結果,可於短時間內製造許多高可靠性的半導體裝置。
於所述方法中,可一面維持將正式壓接用按壓構件加熱至形成連接構件的表面的金屬材料的熔點以上的溫度的狀態,一面重複暫時壓接及正式壓接,而連續地製造多個半導體裝置。
於當暫時壓接時使半導體晶片的連接部與基板或其他半導體晶片的連接部相互接觸的情況下,於正式壓接步驟時可抑制連接部的金屬的流動及飛散。
藉由設為利用各自準備的2個壓接用按壓構件分別進行到暫時壓接為止的步驟與正式壓接步驟,並將正式壓接用的按壓構件維持成高溫的方式,可縮短壓接用按壓構件的加熱及冷卻時間,而可期待生產性的提升。
但是,於該方式中,與先前的方式相比,於正式壓接步驟時連接部的金屬的熔點以上的高溫急速地施加至半導體用接著劑上,因此促進半導體用接著劑的硬化並產生樹脂的流動不足,藉此存在於壓接時捲入的空隙殘留、或因樹脂揮發而產生空隙的情況。進而,因連接部的金屬的熔融與樹脂流動同時產生,故存在產生連接部的金屬的流動或飛散、及由樹脂捕捉所引起的連接不良的情況。
因此,為了獲得充分地抑制空隙的產生、且於連接可靠性方面更優異的半導體裝置,於對暫時壓接用按壓構件進行加熱的溫度下,接著劑層的熔融黏度可為7000 Pa・s以下。藉由暫時壓接步驟時的接著劑層的熔融黏度為7000 Pa・s以下,可更有效地抑制空隙產生及由樹脂捕捉所引起的連接不良。
就提升生產性的觀點而言,因壓接用按壓構件的溫度的上升下降需要時間,故暫時壓接與正式壓接可利用不同的壓接用按壓構件來進行。另外,當進行一次性連接時,於正式壓接中壓接比暫時壓接更多的多個半導體晶片,因此存在使用具備面積大的壓接頭的壓接用按壓構件的傾向。若可如所述般一次性地正式壓接多個半導體晶片來確保連接,則半導體裝置的生產性提升。
當一次性地正式壓接多個半導體晶片時,需要大面積的壓接頭。但是,與先前的組裝1個封裝時所使用的小壓接頭(例如,工具尺寸未滿20 mm左右)相比,壓接多個封裝的大面積的壓接頭(例如,工具尺寸為20 mm左右以上)即便是同等的平行度,面積變得越大,封裝間的高低差亦變得越大。因此,於壓接多個半導體晶片的一次性連接中,因壓接頭的面積變大,故有時於按壓部容易產生凹凸(高低差),於壓接多個半導體晶片來製成封裝時部分地產生連接不良。於半導體晶片的厚度的薄型化,或封裝的小型化、薄型化等正在發展的半導體封裝中,要求更高的連接的精度。
因此,當一次性地正式壓接多個半導體晶片與多個基板、多個其他半導體晶片或半導體晶圓時,為了減少連接不良的半導體裝置的比例,於藉由金屬接合來將半導體晶片的連接部與基板或其他半導體晶片的連接部電性連接的步驟中,可利用平台及與平台對向的壓接頭夾持配置於平台上的多個積層體與以覆蓋該些積層體的方式配置的一次性連接用片材,藉此一次性對多個積層體進行加熱及加壓。一次性連接用片材可具有250℃下的10 GPa以下的儲存彈性模數、及250℃下的40 μm以上的位移量。此處的位移量是於將具有直徑8 μm的圓形的端面的棒狀的按壓用治具擠壓於一次性連接片材的主面上(使主面與端面成為平行的方向)的壓縮試驗中,於250℃的環境下且壓縮負荷為100 N時的位移量。
當壓接多個半導體晶片(積層體)時,藉由使用250℃下的儲存彈性模數為10 GPa以下、250℃下的位移量為40 μm以上的一次性連接用片材,可充分地吸收多個積層體間的高低差並顯現良好的平行度,且對該些均勻地加壓,因此任一個半導體裝置均可確保良好的連接。
當利用與半導體晶片同等或小幾百μm的壓接頭壓接一個半導體晶片時,即便半導體用接著劑的焊點(fillet)(自晶片中的露出部分)量變大,且半導體用接著劑朝按壓半導體晶片的壓接頭方向往上爬,半導體用接著劑亦難以附著於壓接頭上。另一方面,當利用大面積的壓接頭壓接多個半導體晶片時,若焊點量變大並往上爬,則壓接頭被半導體用接著劑污染而需要清洗等,因此存在生產性下降的情況。根據所述製造半導體裝置的方法,即便於壓接時自半導體晶片中露出的接著劑附著於一次性連接用片材上,亦容易更換,因此生產性難以下降。
於本發明的另一形態的方法中,在藉由金屬接合來將半導體晶片的連接部與基板或其他半導體晶片的連接部電性連接的步驟中,於加熱爐內或加熱板上,將積層體加熱至形成半導體晶片的連接部的表面的金屬材料的熔點、或者形成基板或其他半導體晶片的連接部的表面的金屬材料的熔點中的至少任一個熔點以上的溫度。
於該方法的情況下,亦分別實施以比形成連接部的表面的金屬材料的熔點更低的溫度進行暫時壓接的步驟、及以形成連接部的表面的金屬材料的熔點以上的溫度進行加熱的步驟,藉此可縮短暫時壓接用按壓構件的加熱及冷卻所需的時間。因此,能夠以比利用1個壓接用按壓構件進行壓接更短的時間且生產性良好地製造半導體裝置。其結果,可於短時間內製造許多高可靠性的半導體裝置。
於所述方法中,可於加熱爐內或加熱板上一次性對多個積層體進行加熱。藉此,能夠以更高的生產性製造半導體裝置。所述方法中的接著劑層可為含有後述的[1]~[7]的半導體用接著劑的層。
所述接著劑層可為由熱硬化性樹脂組成物所形成的層,所述熱硬化性樹脂組成物含有具有10000以下的分子量的熱硬化性樹脂及其硬化劑。即,所述接著劑層可為含有該熱硬化性樹脂組成物的層。
所述熱硬化性樹脂組成物可進而含有具有10000以上的重量平均分子量的高分子成分。所述高分子成分的重量平均分子量可為30000以上。所述高分子成分的玻璃轉移溫度可為100℃以下。
所述接著劑層可為由事先準備的接著劑膜所形成的層。
然而,例如將多個經個片化的晶片對位並暫時壓接於晶圓上或圖板上後(第一步驟),利用大面積壓接工具一次性地加熱壓接多個晶片來確保連接(第二步驟)的集團接合方式,另外,同樣地將多個經個片化的晶片對位並暫時壓接於晶圓上或圖板上後(第一步驟),於回焊爐或烘箱等的可進行高溫處理的槽內進行熱處理來確保連接(第二步驟)的方式因第二步驟可一次性地組裝多個封裝,故有望提升生產性。於該些方式中,就高可靠性的觀點而言,存在加熱至金屬的熔點以上來形成金屬結合的傾向。
另外,當利用壓接工具拾取供給有半導體用接著劑的半導體晶片時,若以連接部的金屬的熔點以上(例如,若為Sn/Ag焊料,則約為220℃以上)的溫度拾取,則產生由半導體用接著劑的黏性顯現所引起的拾取不良、或由半導體用接著劑的硬化進行所引起的安裝不良(由流動性不足所引起的連接不良或空隙產生),因此必須對壓接工具進行冷卻。
藉由分成第一步驟(對位並進行暫時壓接的步驟)與第二步驟(以連接部的金屬的熔點以上的溫度進行熱處理來確保連接的步驟)來組裝封裝,可省略工具冷卻,生產性提升。
於第二步驟中,就抑制焊點、抑制對於連接部的損害的觀點而言,期待以低負荷或無負荷於回焊爐或烘箱等的可進行高溫處理的槽內進行熱處理來確保連接的方式。
第二步驟因無負荷,故存在對確保連接及抑制空隙造成影響的樹脂流動(半導體用接著劑的流動)不足的傾向。因此,必須於低溫的第一步驟中確保流動性。
藉由在第一步驟中加以無空隙化,並確保連接(接觸),可提升第二步驟後的安裝性(抑制空隙、確保連接)。
於可提升生產性的分成第一步驟與第二步驟來組裝的製造法中,在第一步驟中,半導體用接著劑的流動性不足且空隙容易殘存,難以確保連接(接觸)。若於第一步驟中空隙抑制與連接(接觸)的確保並不充分,則於第二步驟後空隙亦殘存,有可能變成連接不良。
本發明的另一形態是為了解決所述課題而成者,其目的在於提供一種半導體用接著劑、使用其的半導體裝置的製造方法及半導體裝置,所述半導體用接著劑即便於用於經由所述第一步驟及第二步驟來製造半導體裝置的方法的情況下,亦可抑制空隙並確保良好的連接(接觸),且可獲得良好的耐回焊性。
本發明的另一形態的主要目的為即便是於第一步驟中確保充分的流動性,並抑制空隙與確保連接(接觸),藉此於第二步驟中可期待高生產性的一次性組裝的方式(回焊爐等的加熱處理),亦可確保高可靠性(抑制空隙、確保連接、耐回焊性),而提供下述[1]~[7]。
[1] 一種半導體用接著劑,其包括:(a)具有未滿10000的重量平均分子量的樹脂成分、(b)硬化劑、及(c)由下述通式(1)所表示的矽烷醇化合物。 [化1][式中,R1
表示烷基或苯基,R2
表示伸烷基] [2] 如[1]所述的半導體用接著劑,其中所述R1
為苯基。 [3] 如[1]或[2]所述的半導體用接著劑,其中所述(c)矽烷醇化合物於25℃下為固體。 [4] 如[1]至[3]中任一項所述的半導體用接著劑,其更包括(d)具有10000以上的重量平均分子量的高分子成分。 [5] 如[4]所述的半導體用接著劑,其中所述(d)具有10000以上的重量平均分子量的高分子成分的重量平均分子量為30000以上的,且玻璃轉移溫度為100℃以下。 [6] 如[1]至[5]中任一項所述的半導體用接著劑,其為膜狀。 [7] 如[1]至[6]中任一項所述的半導體用接著劑,其於經由如下的第一步驟與第二步驟來製造半導體晶片及配線電路基板各自的連接部相互電性連接的半導體裝置、或多個半導體晶片各自的連接部相互電性連接的半導體裝置時,用於所述連接部的密封,所述第一步驟以比所述連接部的金屬的熔點更低的溫度進行壓接,所述第二步驟藉由以所述連接部的金屬的熔點以上的高溫進行加熱處理來形成金屬結合。 [發明的效果]
根據本發明的一形態,關於包括藉由金屬接合來將連接部彼此連接的半導體裝置的製造,可達成更高的生產性。
以下,根據情況一面參照圖式一面對本發明的適宜的實施形態進行詳細說明。但是,本發明並不限定於以下的實施形態。圖式中,對相同或相當部分標註相同符號,並省略重複的說明。只要事先無特別說明,則上下左右等位置關係是基於圖式中所示的位置關係者。圖式的尺寸比率並不限定於圖示的比率。本說明書中所記載的數值範圍的上限值及下限值可任意地組合。實施例中所記載的數值亦可用作數值範圍的上限值或下限值。於本說明書中,所謂「(甲基)丙烯酸」,是指丙烯酸或對應於其的甲基丙烯酸。
<半導體裝置的製造方法> 第一實施形態 圖1是表示於本實施形態的半導體裝置的製造方法中,將基板暫時壓接於半導體晶片上的步驟的一例的步驟圖。
首先,如圖1的(a)所示,一面在具有半導體晶片本體10、及作為連接部的凸塊30的半導體晶片1與具有基板本體20、及作為連接部的配線16的基板2之間配置接著劑層40,一面將所述半導體晶片1與所述基板2疊加,而形成積層體3。藉由半導體晶圓的切割來形成半導體晶片1後,拾取該半導體晶片1並搬送至基板2上為止,且以使作為連接部的凸塊30與配線16對向配置的方式進行對位。積層體3形成於具有作為經對向配置的一對暫時壓接用按壓構件的壓接頭41及平台42的暫時壓接用的按壓裝置43的平台42上。凸塊30設置於半導體晶片本體10上所設置的配線15上。基板2的配線16設置於基板本體20上的規定的位置上。凸塊30及配線16分別具有由金屬材料形成的表面。
接著劑層40可為藉由將事先準備的接著劑膜貼附於基板2上所形成的層。接著劑膜可藉由加熱壓製、輥層壓、真空層壓等來貼附。接著劑膜的供給面積及厚度對應於半導體晶片1或基板2的尺寸、連接部的高度等而適宜設定。接著劑膜亦可貼附於半導體晶片1上。亦可將接著劑膜貼附於半導體晶圓上,其後對半導體晶圓進行切割來將半導體晶圓加以個片化,藉此製作貼附有接著劑膜的半導體晶片1。
繼而,如圖1的(b)所示,利用作為暫時壓接用按壓構件的平台42及壓接頭41夾持積層體3,藉此進行加熱及加壓,由此將基板2暫時壓接於半導體晶片1上。於圖1的實施形態的情況下,壓接頭41配置於積層體3的半導體晶片1側,平台42配置於積層體3的基板2側。暫時壓接能夠以半導體晶片1的連接部與基板2的連接部接觸的方式進行。藉此,於後續的加熱步驟中容易形成連接部間的金屬接合,並且可減少接著劑層朝連接部間的齧入,連接性進一步提升。
於為了暫時壓接而對積層體3進行加熱及加壓時,將平台42及壓接頭41中的至少一個加熱至比形成作為半導體晶片1的連接部的凸塊30的表面的金屬材料的熔點、及形成作為基板2的連接部的配線16的表面的金屬材料的熔點更低的溫度。
於將基板2暫時壓接於半導體晶片1上的步驟中,為了於拾取半導體晶片時不使熱朝半導體晶片等傳遞,較佳為暫時壓接用按壓構件為低溫。於用於暫時壓接的加熱及加壓時,為了可排除捲入時的空隙,亦可將暫時壓接用按壓構件加熱至接著劑層的流動性提高的程度的高溫。為了縮短冷卻時間,拾取半導體晶片時的按壓構件的溫度與進行暫時壓接時的按壓構件的溫度的差可小。該溫度差可為100℃以下、或60℃以下。該溫度差亦可固定。若溫度差為100℃以下,則存在暫時壓接用按壓構件的冷卻時間縮短,生產性進一步提升的傾向。
暫時壓接用按壓構件的溫度可低於接著劑層的反應開始溫度。所謂反應開始溫度,是指使用示差掃描熱量計(Differential Scanning Calorimeter,DSC)(珀金埃爾默(PerkinElmer)公司製造,DSC-Pyirs1),於樣品量10 mg、升溫速度10℃/min、測定環境:空氣或氮氣的條件下測定由接著劑層的反應所引起的發熱時的開始(On-set)溫度。
就以上的觀點而言,平台42及/或壓接頭41的溫度於拾取半導體晶片的期間內例如可為30℃以上、130℃以下,於為了暫時壓接而對積層體3進行加熱及加壓的期間內例如可為50℃以上、150℃以下。
於為了暫時壓接而對暫時壓接用按壓構件進行加熱的溫度T(對積層體進行加熱及加壓的期間的暫時壓接用按壓構件的溫度)下,接著劑層的熔融黏度可為7000 Pa・s以下。此處,所謂「熔融黏度」,是指利用流變計(日本安東帕(Anton-Paar・Japan)股份有限公司製造,MCR301),於樣品厚度:400 μm,升溫速度10℃/min,頻率:1 Hz的條件下,使用測定夾具(可拋式板(直徑8 mm)及可拋式樣品盤)進行測定時的溫度T下的熔融狀態的接著劑層的黏度。
為了暫時壓接而對暫時壓接用按壓構件進行加熱的溫度T為接著劑層的反應開始溫度以下,亦可為接著劑層的黏度最低、樹脂容易流動的溫度。但是,若黏度過低,則存在樹脂爬上晶片側面,並附著於壓接用按壓構件上,而使生產性下降的情況。因此,於進行暫時壓接的步驟中,在為了暫時壓接而對暫時壓接用按壓構件進行加熱的溫度T下,接著劑層的熔融黏度亦可為1000 Pa・s以上。
就排除半導體晶片間或半導體晶片-基板間的空隙,使各個連接部相互充分地接觸的觀點而言,用於暫時壓接的負荷例如於半導體晶片的每1針(1個凸塊)中可為0.009 N~0.2 N。
圖2是表示藉由金屬接合來將半導體晶片的連接部與基板的連接部電性連接的正式壓接的步驟的一例的步驟圖。
如圖2的(a)及(b)所示,使用有別於按壓裝置43所準備的具有作為正式壓接用按壓構件的平台45及壓接頭44的正式壓接用的按壓裝置46,進一步對積層體3進行加熱及加壓。利用平台45及壓接頭44夾持積層體3,藉此進行加熱及加壓,由此藉由金屬接合來將凸塊30與配線16電性連接。藉此正式壓接半導體晶片1與基板2。於圖2的實施形態的情況下,壓接頭44配置於積層體3的半導體晶片1側,平台45配置於積層體3的基板2側。
於對積層體3進行加熱及加壓時,將平台45或壓接頭44中的至少一個加熱至形成作為半導體晶片1的連接部的凸塊30的表面的金屬材料的熔點、或形成作為基板2的連接部的配線16的表面的金屬材料的熔點中的至少任一個熔點以上的溫度。於連接部的金屬材料含有焊料的情況下,該加熱溫度(正式壓接中的平台45及/或壓接頭44的溫度)可為230℃以上或250℃以上,亦可為330℃以下或300℃以下。若加熱溫度為230℃以上或250℃以上,則連接部的焊料熔融而容易形成充分的金屬結合。若加熱溫度為330℃以下或300℃以下,則難以產生空隙,可進一步抑制焊料的飛散。就去除冷卻時間,提升生產性這一觀點而言,於正式壓接的步驟中,正式壓接中的溫度可固定。
於重複對多個積層體3依次進行加熱及加壓來連續地製造多個半導體裝置的期間內,可將平台45及/或壓接頭44的溫度維持成固定以上的溫度。換言之,可一面將平台45及/或壓接頭44維持成固定以上,一面依次更換積層體3來連續進行多次正式壓接。藉由將裝置維持成固定的範圍的溫度,無需冷卻時間且生產性進一步提升。有時於接觸外部氣體及半導體晶片時熱量逸散,平台45及/或壓接頭44的溫度略微變動,但只要變動的範圍為±10℃以下,則即便變動亦不存在問題。
於對積層體進行加熱及加壓時,平台45及/或壓接頭44的溫度可高於接著劑層的反應開始溫度。於正式壓接中促進接著劑層的硬化,藉此存在抑制空隙及連接性進一步提升的傾向。
暫時壓接用按壓構件及正式壓接用按壓構件可分別設置於2個以上的不同的裝置中,亦可共同設置於1個裝置內。可使用具備暫時壓接用按壓構件及正式壓接用按壓構件的雙頭型裝置。
於圖1及圖2的實施形態中表示了壓接半導體晶片與基板的步驟的例子,但製造半導體裝置的方法亦可包括將半導體晶片彼此相互壓接的步驟。亦可使用包含相當於半導體晶片1的多個部分的切割前的半導體晶圓來代替半導體晶片1。一面以凸塊的熔點以上的溫度對半導體晶片彼此進行加熱一面按壓,而將半導體晶片間連接,並且以連接部得到密封的方式,藉由接著劑膜來填充半導體晶片間的空隙。於連接部的金屬材料含有焊料的情況下,能夠以連接部(焊料部分)的溫度變成230℃以上或250℃以上的方式對半導體晶片進行加熱。連接負荷取決於凸塊數,但要考慮吸收凸塊的高度不均、及控制凸塊變形量來設定。就提升生產性的觀點而言,連接時間可設定成短時間。可一面使焊料熔融來去除氧化膜及表面的雜質,一面於連接部形成金屬接合。
就提升生產性的觀點而言,暫時壓接所耗費的壓接時間及正式壓接所耗費的連接時間(壓接時間)可設定成短時間。所謂短時間的連接時間(壓接時間),是指於連接形成(正式壓接)中將連接部加熱至230℃以上的時間(例如,使用焊料時的時間)為5秒以下。連接時間亦可為4秒以下或3秒以下。若各壓接時間比冷卻時間短,則可進一步顯現本發明的製造方法的效果。
作為暫時壓接用或正式壓接用的按壓裝置,可使用覆晶接合機、加壓烘箱等。
於暫時壓接及正式壓接中,亦可壓接多個晶片。例如於平面式地壓接多個晶片的集團接合中,可將多個半導體晶片一個一個地暫時壓接於晶圓或圖板上,其後,一次性地正式壓接多個晶片。
於在TSV結構的封裝中常見的堆疊壓接中,立體式地壓接多個晶片。於該情況下,亦可將多個半導體晶片一個一個地堆積並進行暫時壓接,其後,一次性地正式壓接多個晶片。
第二實施形態 第二實施形態的半導體裝置的製造方法亦包括如下的步驟:將半導體晶片與基板或其他半導體晶片暫時固定而獲得積層體後,利用具備平台與壓接頭的正式壓接用按壓構件進行正式壓接。將半導體晶片與基板或其他半導體晶片暫時固定而獲得積層體的步驟可為與第一實施形態的暫時壓接相同的形態。第二實施形態與第一實施形態的不同點在於利用平台及與平台對向的壓接頭夾持配置於平台上的多個積層體與以覆蓋該些積層體的方式配置的一次性連接用片材,藉此一次性對多個積層體進行加熱及加壓來進行正式壓接,其他與第一實施形態相同。圖3是表示使用一次性連接用片材,並藉由金屬接合來將半導體晶片的連接部與基板的連接部電性連接的正式壓接的步驟的一例的步驟圖。可將具有半導體晶圓與多個半導體晶片的積層體配置於平台上,並利用一次性連接用片材對其進行覆蓋。
如圖3的(a)及(b)所示,使用有別於暫時壓接用的按壓裝置43所準備的具有作為正式壓接用按壓構件的平台45及壓接頭44的正式壓接用的按壓裝置46,進一步對積層體3進行加熱及加壓。於平台45上排列多個積層體3,並以覆蓋積層體3的方式配置一次性連接用片材47。而且,利用平台45及壓接頭44同時夾持一次性連接用片材47與多個積層體3,藉此一次性對多個積層體進行加熱及加壓,由此藉由金屬接合來將凸塊30與配線16電性連接。於圖3的實施形態的情況下,壓接頭44配置於積層體3的半導體晶片1側,平台45配置於積層體3的基板2側。
就一次性地壓接更多的半導體晶片來提升半導體裝置的生產性的觀點而言,壓接頭44的與半導體晶片接觸的面的面積可為50 mm×50 mm以上。就可對應於尺寸為12吋的晶圓這一觀點而言,壓接頭44的與半導體晶片接觸的面的面積可為330 mm×330 mm左右。
<一次性連接用片材> 一次性連接用片材的原料只要是於250℃下顯示出特定的儲存彈性模數與位移量的樹脂,則並無特別限定。作為樹脂,例如可列舉:聚四氟乙烯樹脂、聚醯亞胺樹脂、苯氧基樹脂、環氧樹脂、聚醯胺樹脂、聚碳二醯亞胺樹脂、氰酸酯樹脂、丙烯酸樹脂、聚酯樹脂、聚乙烯樹脂、聚醚碸樹脂、聚醚醯亞胺樹脂、聚乙烯縮醛樹脂、胺基甲酸酯樹脂、及丙烯酸橡膠。就耐熱性及膜形成性優異這一觀點而言,一次性連接用片材可為包含選自聚四氟乙烯樹脂、聚醯亞胺樹脂、環氧樹脂、苯氧基樹脂、丙烯酸樹脂、丙烯酸橡膠、氰酸酯樹脂、及聚碳二醯亞胺樹脂中的至少一種樹脂的片材。就耐熱性及膜形成性特別優異這一觀點而言,一次性連接用片材的樹脂可為包含選自聚四氟乙烯樹脂、聚醯亞胺樹脂、苯氧基樹脂、丙烯酸樹脂及丙烯酸橡膠中的至少一種樹脂的片材。該些樹脂可單獨使用一種、或將兩種以上組合使用。
若250℃下的一次性連接用片材的儲存彈性模數低,則存在使用具有大的面積的壓接頭按壓半導體晶片時容易確保良好的連接的傾向。因此,關於250℃下的一次性連接用片材的儲存彈性模數,例如儲存彈性模數可為10 GPa以下、或8 GPa以下。若250℃下的一次性連接用片材的儲存彈性模數高,則一次性連接用片材具有適當的柔軟度,因此存在進一步吸收多個積層體間的高低差並顯現良好的平行度,可更均勻地對該些積層體進行加壓的傾向。因此,250℃下的一次性連接用片材的儲存彈性模數可為0.01 GPa以上、或0.1 GPa以上。250℃下的儲存彈性模數可使用通常的彈性模數測定裝置來測定。例如,可使用彈性模數測定裝置RSA2(流變科學(Rheometric Scientific)公司製造)等,一面以頻率10 Hz、升溫速度5℃/min自-30℃升溫至300℃為止,一面測定樣品的黏彈性,並根據其測定結果求出250℃下的儲存彈性模數。
一次性連接用片材的250℃下的儲存彈性模數滿足所述範圍,進而可顯示出250℃下的充分的位移量,例如40 μm以上。若該位移量為40 μm以上,則於一次性地正式壓接多個半導體晶片時可確保特別良好的連接。250℃下的位移量亦可為200 μm以下。於本說明書中,所謂位移量,是指於將具有直徑8 μm的圓形的端面的棒狀的按壓用治具擠壓於一次性連接片材的主面上(使主面與端面成為平行的方向)的壓縮試驗中,於250℃的環境下且壓縮負荷為100 N時的位移量。位移量例如可使用機電式萬能試驗機(英斯特朗(INSTRON)公司製造)來測定。
一次性連接用片材的耐熱性可高。就提高半導體裝置的生產性的觀點而言,一次性連接用片材可為於250℃以上的溫度下壓接時不熔融,且不附著於半導體晶片上者。
就使正式壓接用按壓構件可識別由一次性連接用片材覆蓋的半導體晶片或基板上的對準標記(用於對位的識別用標記)的觀點而言,一次性連接用片材可具有高透明性。一次性連接用片材的波長550 nm中的透過率例如可為10%以上。
一次性連接用片材的厚度能夠以滿足所述性質的方式適宜設計。厚度例如可為50 μm以上、80 μm以上、或100 μm以上。一次性連接用片材的厚度亦可為300 μm以下。
一次性連接用片材可為市售的彈性體片材。作為市售的彈性體片材,可列舉:尼特氟龍(Nitoflon)900UL(日東電工公司製造)、尤匹萊克斯(Upilex)SGA(宇部興產公司製造)等。
藉由使用具有所述特定的儲存彈性模數及位移量的一次性連接用片材,可充分地吸收多個積層體間的高低差並顯現良好的平行度,且均勻地對該些積層體進行加壓,因此任一種半導體裝置均可確保更良好的連接。另外,即便於壓接時自半導體晶片中露出的接著劑附著於一次性連接用片材上,亦容易更換,因此生產性難以下降。
第三實施形態 於第三實施形態的半導體裝置的製造方法中,緊接著與第一實施形態相同的暫時壓接,如圖4所示,於加熱爐60內對經暫時壓接的積層體3進行加熱,由此藉由金屬接合來將半導體晶片1的凸塊30與基板2的配線16電性連接。除此以外,第三實施形態的方法與第一實施形態相同。可於1個加熱爐60內對多個積層體進行加熱,而一次性進行多個積層體中的連接。
於對積層體進行加熱時,將加熱爐60內的氣體加熱至形成半導體晶片1的連接部的表面的金屬材料的熔點、或形成基板2的連接部的表面的金屬材料的熔點中的至少任一個熔點以上的溫度。
當連接部的金屬材料含有焊料時,於對積層體進行加熱的期間內,加熱爐60內的氣體的溫度可為230℃以上、330℃以下。若加熱爐60內的氣體的溫度為230℃以上,則連接部的焊料熔融而容易形成充分的金屬結合。若加熱爐60內的氣體的溫度為330℃以下,則難以產生空隙,可進一步抑制焊料的飛散。加熱爐60內的壓力並無特別限制,但可為大氣壓。
於對積層體進行加熱的期間內,加熱爐60內的氣體的溫度可高於接著劑層的反應開始溫度。於加熱步驟中促進接著劑層的硬化,藉此抑制空隙及連接性可進一步提升。
於加熱爐60內,可在將重物載置於積層體上、或利用夾具固定積層體等的狀態下,對積層體進行加熱。藉此,可進一步抑制由半導體晶片與基板之間、及半導體晶片與接著劑層之間的熱膨脹差所產生的翹曲及連接不良。
作為加熱爐,可使用回焊爐、烘箱等。或者,亦可於加熱板上對積層體進行加熱。於此情況下,加熱板的溫度可設定成與加熱爐內的空氣相同的溫度。
將連接部加以連接的步驟(加熱步驟)不僅形成金屬結合,而且可促進接著劑層的硬化。於使用壓接用按壓構件進行連接的情況下,於壓接時壓接用按壓構件的熱難以傳導至作為朝晶片側面露出的接著劑的焊點上。因此,連接後為了使焊點部分等的硬化更充分,需要進一步的加熱處理步驟。但是,當不使用壓接用按壓構件,而使用熱施加至整個積層體的回焊爐、烘箱、加熱板等時,可縮短或去除連接後的加熱處理。
<半導體裝置> 對藉由本實施形態的半導體裝置的製造方法所獲得的半導體裝置進行說明。本實施形態的半導體裝置中的連接部可為凸塊與配線的金屬接合、及凸塊與凸塊的金屬接合的任一種。於本實施形態的半導體裝置中,例如可使用經由接著劑層而獲得電性連接的覆晶連接。
圖5是表示半導體裝置的一實施形態(半導體晶片及基板的COB型的連接形態)的示意剖面圖。圖5的(a)中所示的半導體裝置100具備半導體晶片1與基板(配線電路基板)2、及介於該些之間的接著劑層40。於半導體裝置100的情況下,半導體晶片1具有半導體晶片本體10、配置於半導體晶片本體10的基板2側的面上的配線15、及配置於配線15上的作為連接部的凸塊30。基板2具有基板本體20、及配置於基板本體20的半導體晶片1側的面上的作為連接部的配線16。半導體晶片1的凸塊30與基板2的配線16藉由金屬接合而電性連接。半導體晶片1及基板2藉由配線16及凸塊30而覆晶連接。配線15、配線16及凸塊30由接著劑層40密封,藉此遠離外部環境。
圖5的(b)中所示的半導體裝置200具備半導體晶片1、基板2、及介於該些之間的接著劑層40。於半導體裝置200的情況下,半導體晶片1具有配置於半導體晶片1的基板2側的面上的凸塊32作為連接部。基板2具有配置於基板2的半導體晶片1側的面上的凸塊33作為連接部。半導體晶片1的凸塊32與基板2的凸塊33藉由金屬接合而電性連接。半導體晶片1及基板2藉由凸塊32、凸塊33而覆晶連接。凸塊32、凸塊33由接著劑層40密封,藉此遠離外部環境。
圖6是表示半導體裝置的其他實施形態(半導體晶片彼此的COC型的連接形態)的示意剖面圖。除2個半導體晶片1經由配線15及凸塊30而覆晶連接這一點以外,圖6的(a)中所示的半導體裝置300的構成與半導體裝置100相同。除2個半導體晶片1經由凸塊32而覆晶連接這一點以外,圖6的(b)中所示的半導體裝置400的構成與半導體裝置200相同。
於圖5及圖6中,配線15、凸塊32等連接部可為被稱為焊墊的金屬膜(例如,鍍金),亦可為後電極(post electrode)(例如,銅柱(copper pillar))。例如,於圖6的(b)中,在一個半導體晶片具有銅柱及連接凸塊(焊料:錫-銀)作為連接部,另一個半導體晶片具有鍍金作為連接部的形態中,連接部只要達到連接部的金屬材料中的熔點最低的焊料的熔點以上的溫度,則焊料熔融並於連接部間形成金屬接合,可實現連接部間的電性連接。
作為半導體晶片本體10,並無特別限制,可使用包含矽、鍺等同一種類的元素的元素半導體,砷化鎵、銦磷等化合物半導體等各種半導體。
作為基板2,只要是配線電路基板,則並無特別限制,可使用:於將環氧玻璃、聚醯亞胺、聚酯、陶瓷、環氧樹脂(epoxy)、雙馬來醯亞胺三嗪等作為主要成分的絕緣基板的表面上將所形成的金屬層的不需要的部位蝕刻去除而形成有配線(配線圖案)的電路基板、藉由金屬鍍敷等而於所述絕緣基板的表面上形成有配線(配線圖案)的電路基板、將導電性物質印刷於所述絕緣基板的表面上而形成有配線(配線圖案)的電路基板等。
作為配線15及配線16、凸塊30、凸塊32及凸塊33(導電性突起)等連接部的材質,可使用金、銀、銅、焊料(主成分例如為錫-銀、錫-鉛、錫-鉍、錫-銅、錫-銀-銅)、錫、鎳等作為主成分,可僅包含單一的成分,亦可包含多種成分。連接部亦可具有將該些金屬積層而成的結構。金屬材料之中,銅、焊料比較廉價。就提升連接可靠性及抑制翹曲的觀點而言,連接部可含有焊料。
作為焊墊的材質,可使用金、銀、銅、焊料(主成分例如為錫-銀、錫-鉛、錫-鉍、錫-銅、錫-銀-銅)、錫、鎳等作為主成分,可僅包含單一的成分,亦可包含多種成分。焊墊亦可具有將該些金屬積層而成的結構。就連接可靠性的觀點而言,焊墊可含有金及/或焊料。
於配線15、配線16(配線圖案)的表面上可形成將金、銀、銅、焊料(主成分例如為錫-銀、錫-鉛、錫-鉍、錫-銅)、錫、鎳等作為主成分的金屬層。該金屬層可僅包含單一的成分,亦可包含多種成分。金屬層亦可具有將多個金屬層積層而成的結構。金屬層可含有比較廉價的銅及/或焊料。就提升連接可靠性及抑制翹曲的觀點而言,金屬層可含有焊料。
可將如圖5或圖6中所示的半導體裝置(封裝)積層,並藉由金、銀、銅、焊料(主成分例如為錫-銀、錫-鉛、錫-鉍、錫-銅、錫-銀-銅)、錫、鎳等來進行電性連接。用於進行連接的金屬可為比較廉價的銅及/或焊料。例如可如於TSV技術中所看到般,使接著劑層介於半導體晶片間來進行覆晶連接或積層,形成貫穿半導體晶片的孔,並與圖案面的電極相連。
圖7是表示半導體裝置的其他實施形態(半導體晶片積層型的形態(TSV))的示意剖面圖。於圖7中所示的半導體裝置500中,藉由將形成於作為基板的中介層(interposer)本體50上的配線15與半導體晶片1的凸塊30連接,而將半導體晶片1與中介層5覆晶連接。接著劑層40介於半導體晶片1與中介層5之間。在所述半導體晶片1中的與中介層5相反側的表面上,經由配線15、凸塊30及接著劑層40而重複積層有半導體晶片1。半導體晶片1的表背的圖案面的配線15藉由填充至貫穿半導體晶片本體10的內部的孔內的貫穿電極34而相互連接。作為貫穿電極34的材質,可使用銅、鋁等。
藉由此種TSV技術,亦可自通常不使用的半導體晶片的背面取得信號。進而,因使貫穿電極34於半導體晶片1內垂直地穿過,故縮短對向的半導體晶片1間、以及半導體晶片1與中介層5間的距離,並可實現柔軟的連接。於此種TSV技術中,本實施形態的接著劑層可用作對向的半導體晶片1間、以及半導體晶片1與中介層5間的密封材料。
於區域凸塊晶片技術等自由度高的凸塊形成方法中,可不經由中介層而將半導體晶片以原樣直接安裝於母板上。本實施形態的接著劑層亦可應用於將此種半導體晶片直接安裝於母板上的情況。於將2個配線電路基板積層的情況下,對基板間的空隙進行密封或填充時亦可應用本實施形態的接著劑層。
<熱硬化性樹脂組成物> 接著劑層例如可為由熱硬化性樹脂組成物所形成的層,所述熱硬化性樹脂組成物含有具有10000以下的分子量的熱硬化性樹脂及其硬化劑。換言之,接著劑層可為包含熱硬化性樹脂組成物的層,所述熱硬化性樹脂組成物含有具有10000以下的分子量的熱硬化性樹脂及其硬化劑。
(a)熱硬化性樹脂 熱硬化性樹脂為可藉由加熱而形成交聯結構的化合物。熱硬化性樹脂可具有10000以下的分子量。熱硬化性樹脂組成物藉由含有與硬化劑進行反應而形成交聯結構的化合物(熱硬化性樹脂),而抑制分子量小的成分於加熱時分解等所產生的空隙,因此就耐熱性的觀點而言有利。作為熱硬化性樹脂,可列舉:環氧樹脂、丙烯酸樹脂等。
就耐熱性、流動性的觀點而言,熱硬化性樹脂的重量平均分子量可為100~9000、或300~7000。熱硬化性樹脂的重量平均分子量的測定方法與後述的(d)高分子成分的重量平均分子量的測定方法相同。
(a1)丙烯酸樹脂 丙烯酸樹脂是於分子內具有1個以上的(甲基)丙烯醯基的化合物。作為丙烯酸樹脂,例如可列舉:具有源自選自雙酚A、雙酚F、萘、苯酚酚醛清漆、甲酚酚醛清漆、苯酚芳烷基、聯苯、三苯基甲烷、二環戊二烯、茀、金剛烷及異三聚氰酸中的化合物的骨架及(甲基)丙烯醯氧基的(甲基)丙烯酸酯,以及各種多官能(甲基)丙烯酸化合物。就耐熱性的觀點而言,可自具有源自選自雙酚A、雙酚F、萘、茀、金剛烷及異三聚氰酸中的化合物的骨架的(甲基)丙烯酸酯中選擇丙烯酸樹脂。丙烯酸樹脂可單獨使用一種、或將兩種以上組合使用。
相對於熱硬化性樹脂組成物的總量100質量份,丙烯酸樹脂的含量可為10質量份~50質量份、或15質量份~40質量份。若丙烯酸樹脂的含量為10質量%以上,則充分地存在硬化成分,因此容易控制熱硬化性樹脂組成物的硬化後的流動。若丙烯酸樹脂的含量為50質量%以下,則可進一步抑制由硬化物變得過硬所引起的封裝的翹曲。
丙烯酸樹脂於室溫(25℃)下可為固體。就難以產生空隙這一點、及硬化前(B階段)的熱硬化性樹脂組成物的黏性(黏度)小且處理性優異這一點而言,固體的丙烯酸樹脂比液狀的丙烯酸樹脂有利。作為於室溫(25℃)下為固體的丙烯酸樹脂,例如可列舉:具有源自選自雙酚A、茀、金剛烷及異三聚氰酸中的化合物的骨架的(甲基)丙烯酸酯。
丙烯酸樹脂中的(甲基)丙烯醯基的數量(官能基數)可為3以下。若官能基數為3以下,則熱硬化性樹脂組成物可於短時間內充分地硬化,因此可進一步抑制硬化反應率的下降。若硬化反應率低,則未反應基可能殘存。
(a2)環氧樹脂 環氧樹脂是於分子內具有2個以上的環氧基的化合物。作為環氧樹脂,例如可列舉:雙酚A型、雙酚F型、萘型、苯酚酚醛清漆型、甲酚酚醛清漆型、苯酚芳烷基型、聯苯型、三苯基甲烷型及二環戊二烯型環氧樹脂,以及各種多官能環氧樹脂。就耐熱性、處理性的觀點而言,可自雙酚F型、苯酚酚醛清漆型、甲酚酚醛清漆型、聯苯型、及三苯基甲烷型環氧樹脂中選擇環氧樹脂。就速硬化性及耐熱性的觀點而言,可自雙酚F型及三苯基甲烷型環氧樹脂中選擇環氧樹脂。環氧樹脂可單獨使用一種、或將兩種以上組合使用。
相對於熱硬化性樹脂組成物的總量100質量份,環氧樹脂的含量可為10質量份~50質量份。若環氧樹脂的含量為10質量份以上,則充分地存在硬化成分,因此容易控制熱硬化性樹脂組成物的硬化後的流動。若環氧樹脂的含量為50質量份以下,則可進一步抑制由硬化物變得過硬所引起的封裝的翹曲。
(b)硬化劑 硬化劑是與熱硬化性樹脂進行反應,並與熱硬化性樹脂一同形成交聯結構的化合物。作為硬化劑,例如可列舉:酚樹脂系硬化劑、酸酐系硬化劑、胺系硬化劑、咪唑系硬化劑、膦系硬化劑、偶氮化合物及有機過氧化物。硬化反應(硬化系)可為自由基聚合(自由基聚合系)。硬化劑可單獨使用一種、或將兩種以上組合使用。酚樹脂系硬化劑、酸酐系硬化劑及胺系硬化劑分別可單獨使用一種、或用作兩種以上的混合物。咪唑系硬化劑及膦系硬化劑分別可單獨使用,但亦可與酚樹脂系硬化劑、酸酐系硬化劑或胺系硬化劑一同使用。
只要硬化進行,則熱硬化性樹脂與硬化劑的組合並無特別限制。就處理性及保存穩定性的觀點而言,與丙烯酸樹脂進行組合的硬化劑可為有機過氧化物。就處理性、保存穩定性及硬化性優異的觀點而言,與環氧樹脂進行組合的硬化劑可自酚樹脂系硬化劑與咪唑系硬化劑、酸酐系硬化劑與咪唑系硬化劑、胺系硬化劑與咪唑系硬化劑、及僅咪唑系硬化劑中選擇。若於短時間內硬化,則生產性提升,因此可單獨使用速硬化性及保存穩定性優異的咪唑系硬化劑。若熱硬化性樹脂組成物於短時間內硬化,則可減少低分子成分等揮發成分的量,因此可進一步抑制空隙的產生。就處理性、保存穩定性的觀點而言,與丙烯酸樹脂進行組合的硬化劑可為有機過氧化物或偶氮化合物。
(b1)酚樹脂系硬化劑 酚樹脂系硬化劑於分子內具有2個以上的酚性羥基。作為酚樹脂系硬化劑,例如可列舉:苯酚酚醛清漆、甲酚酚醛清漆、苯酚芳烷基樹脂、甲酚萘酚甲醛縮聚物、三苯基甲烷型多官能苯酚及各種多官能酚樹脂。該些可單獨使用一種、或將兩種以上組合使用。
就硬化性、接著性及保存穩定性優異的觀點而言,酚樹脂系硬化劑對於環氧樹脂的當量比(酚性羥基/環氧基,莫耳比)可為0.3~1.5、0.4~1.0、或0.5~1.0。若該當量比為0.3以上,則存在硬化性提升且接著力進一步提升的傾向。若該當量比為1.5以下,則存在未反應的酚性羥基不過度地殘存,吸水率被抑制得低,絕緣可靠性進一步提升的傾向。
(b2)酸酐系硬化劑 作為酸酐系硬化劑,例如可列舉:甲基環己烷四羧酸二酐、偏苯三甲酸酐、均苯四甲酸酐、二苯甲酮四羧酸二酐及乙二醇雙脫水偏苯三酸酯。該些可單獨使用一種、或將兩種以上組合使用。
就硬化性、接著性及保存穩定性優異的觀點而言,酸酐系硬化劑對於環氧樹脂的當量比(酸酐基/環氧基,莫耳比)可為0.3~1.5、0.4~1.0、或0.5~1.0。若該當量比為0.3以上,則存在硬化性提升且接著力進一步提升的傾向。若該當量比為1.5以下,則存在未反應的酸酐難以過度地殘存,吸水率被抑制得低,絕緣可靠性進一步提升的傾向。
(b3)胺系硬化劑 作為胺系硬化劑,例如可列舉:二氰二胺、十二烷二胺等。該些可單獨使用一種、或將兩種以上組合使用。
就硬化性、接著性及保存穩定性優異的觀點而言,胺系硬化劑對於環氧樹脂的當量比(胺基的活性氫數/環氧基,莫耳比)可為0.3~1.5、0.4~1.0、或0.5~1.0。若該當量比為0.3以上,則存在硬化性提升且接著力進一步提升的傾向。若該當量比為1.5以下,則未反應的胺難以過度地殘存,因此存在絕緣可靠性提升的傾向。
(b4)咪唑系硬化劑 作為咪唑系硬化劑,例如可列舉:2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰基乙基-2-十一基咪唑、1-氰基-2-苯基咪唑、1-氰基乙基-2-十一基咪唑偏苯三酸酯、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二胺基-6-[2'-十一基咪唑基-(1')]-乙基-均三嗪、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪異三聚氰酸加成物、2-苯基咪唑異三聚氰酸加成物、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、及環氧樹脂與咪唑類的加成物。就硬化性、保存穩定性及連接可靠性優異的觀點而言,可自1-氰基乙基-2-十一基咪唑、1-氰基-2-苯基咪唑、1-氰基乙基-2-十一基咪唑偏苯三酸酯、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪異三聚氰酸加成物、2-苯基咪唑異三聚氰酸加成物、2-苯基-4,5-二羥基甲基咪唑及2-苯基-4-甲基-5-羥基甲基咪唑中選擇咪唑系硬化劑。該些可單獨使用一種、或將兩種以上組合使用。另外,亦可用作將該些加以微膠囊化而成的潛在性硬化劑。
相對於環氧樹脂100質量份,咪唑系硬化劑的含量可為0.1質量份~20質量份、或0.1質量份~10質量份。若該含量為0.1質量份以上,則存在硬化性提升的傾向。若該含量為20質量份以下,則於形成金屬接合前熱硬化性樹脂組成物難以硬化,因此存在難以產生連接不良的傾向。
(b5)膦系硬化劑 作為膦系硬化劑,例如可列舉:三苯基膦、四苯基鏻四苯基硼酸鹽、四苯基鏻四(4-甲基苯基)硼酸鹽及四苯基鏻(4-氟苯基)硼酸鹽。該些可單獨使用一種、或將兩種以上組合使用。
相對於環氧樹脂100質量份,膦系硬化劑的含量可為0.1質量份~10質量份、或0.1質量份~5質量份。若該含量為0.1質量份以上,則存在硬化性提升的傾向。若該含量為10質量份以下,則於形成金屬接合前熱硬化性樹脂組成物難以硬化,因此存在難以產生連接不良的傾向。
(b6)偶氮化合物 作為偶氮化合物,例如可列舉:二甲基胺基偶氮苯、二甲基胺基偶氮苯-羧酸、二乙基胺基偶氮苯、及二乙基胺基偶氮苯-羧酸。偶氮化合物可單獨使用一種、或將兩種以上組合使用。
相對於丙烯酸樹脂100質量份,偶氮化合物的含量可為0.5質量份~10質量份、或1質量份~5質量份。若該含量為0.5質量%以上,則存在硬化性提升的傾向。若該含量為10質量份以下,則於形成金屬接合前熱硬化性樹脂組成物難以硬化,因此存在難以產生連接不良的傾向。
(b7)有機過氧化物 作為有機過氧化物,例如可列舉:酮過氧化物、過氧縮酮、氫過氧化物、二烷基過氧化物、二醯基過氧化物、過氧化二碳酸酯、過氧酯等。就保存穩定性的觀點而言,有機過氧化物可為選自氫過氧化物、二烷基過氧化物及過氧酯中的一種以上。就耐熱性的觀點而言,有機過氧化物可為選自氫過氧化物及二烷基過氧化物中的一種以上。該些可單獨使用一種、或將兩種以上組合使用。
相對於丙烯酸樹脂100質量份,有機過氧化物的含量較佳為0.5質量份~10質量份,更佳為1質量份~5質量份。若該含量為0.5質量%以上,則存在硬化性提升的傾向。若該含量為10質量份以下,則於形成金屬接合前熱硬化性樹脂組成物難以硬化,因此存在難以產生連接不良的傾向。另外,若該含量過少,則硬化急劇地進行且反應點變多,因此存在難以產生由分子鏈變短、或未反應基殘存所引起的可靠性的下降的傾向。
(c)高分子成分 本實施形態的熱硬化性樹脂組成物可進而含有具有10000以上的重量平均分子量的高分子成分。熱硬化性樹脂、硬化劑等高分子成分以外的成分的重量平均分子量或分子量通常未滿10000。作為高分子成分,例如可列舉:環氧樹脂、苯氧基樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚碳二醯亞胺樹脂、氰酸酯樹脂、丙烯酸樹脂、聚酯樹脂、聚乙烯樹脂、聚醚碸樹脂、聚醚醯亞胺樹脂、聚乙烯縮醛樹脂、胺基甲酸酯樹脂及丙烯酸橡膠。就耐熱性及膜形成性優異這一觀點而言,可自環氧樹脂、苯氧基樹脂、聚醯亞胺樹脂、丙烯酸樹脂、丙烯酸橡膠、氰酸酯樹脂及聚碳二醯亞胺樹脂中選擇高分子量成分。就耐熱性及膜形成性更優異這一觀點而言,可自環氧樹脂、苯氧基樹脂、聚醯亞胺樹脂、丙烯酸樹脂及丙烯酸橡膠中選擇高分子量成分。該些高分子成分可單獨使用一種、或將兩種以上組合使用。
高分子成分與丙烯酸樹脂的質量比並無特別限制。相對於高分子成分1質量份,丙烯酸樹脂的含量可為0.01質量份~10質量份、0.05質量份~5質量份、或0.1質量份~5質量份。若該質量比為0.01質量份以上,則存在硬化性提升且接著力進一步提升的傾向。若該質量比為10質量份以下,則存在熱硬化性樹脂組成物的膜形成性特別優異的傾向。
高分子成分與環氧樹脂的質量比並無特別限制。相對於高分子成分1質量份,環氧樹脂的含量可為0.01質量份~5質量份、0.05質量份~4質量份、或0.1質量份~3質量份。若該質量比為0.01質量份以上,則存在硬化性提升且接著力進一步提升的傾向。若該質量比為5質量份以下,則存在熱硬化性樹脂組成物的膜形成性特別優異的傾向。
就熱硬化性樹脂組成物朝基板及晶片上的貼附性優異的觀點而言,高分子成分的玻璃轉移溫度(Tg)可為120℃以下、100℃以下、或85℃以下。高分子量成分的Tg亦可為0℃以上。若高分子成分的Tg為120℃以下,則容易將形成於半導體晶片上的凸塊、形成於基板上的電極或配線圖案等的高低差埋入至熱硬化性樹脂組成物中,因此存在氣泡的殘存得到抑制且難以產生空隙的傾向。於本說明書中,所謂Tg,是指使用DSC(珀金埃爾默公司製造的DSC-7型),並藉由利用樣品量10mg、升溫速度10℃/min、測定環境:空氣的條件的示差掃描熱量測定所求出的值。
高分子成分的重量平均分子量以聚苯乙烯換算計可為10000以上,但為了單獨顯示出更良好的膜形成性,亦可為30000以上、40000以上、或50000以上。於本說明書中,所謂重量平均分子量,是指使用高效液相層析法(島津製作所製造的C-R4A)所測定的聚苯乙烯換算的重量平均分子量。
(d)填料
為了控制黏度及硬化物的物性,及為了進一步抑制將半導體晶片彼此、或半導體晶片與基板連接時的空隙的產生及吸濕率,本實施形態的熱硬化性樹脂組成物可進而含有填料。作為填料,例如可列舉:無機填料及樹脂填料。作為無機填料,例如可列舉:玻璃、二氧化矽、氧化鋁、氧化鈦、碳黑、雲母及氮化硼等絕緣性無機填料。就處理性的觀點而言,可自二氧化矽、氧化鋁、氧化鈦及氮化硼中選擇無機填料,就形狀統一性(處理性)的觀點而言,可自二氧化矽、氧化鋁及氮化硼中選擇無機填料。絕緣性無機填料亦可為晶鬚。作為晶鬚,例如可列舉:硼酸鋁、鈦酸鋁、氧化鋅、矽酸鈣、硫酸鎂及氮化硼。作為樹脂填料,例如可列舉:聚胺基甲酸酯、聚醯亞胺、甲基丙烯酸甲酯樹脂及甲基丙烯酸甲酯-丁二烯-苯乙烯共聚樹脂(Methylmethacrylate-Butadiene-Styrene,MBS)。填料可單獨使用一種、或將兩種以上組合使用。填料的形狀、粒徑、及含量並無特別限制。
就絕緣可靠性優異的觀點而言,填料可為絕緣性。本實施形態的熱硬化性樹脂組成物可實質上不含銀填料、焊料填料等導電性的金屬填料。例如,以熱硬化性樹脂組成物的固體成分(溶媒以外的成分)整體為基準,導電性的金屬填料的含量可未滿1質量%。
填料可藉由表面處理來適宜調整物性。就提升分散性及接著力的觀點而言,填料可為經表面處理的填料。作為表面處理劑,可列舉:縮水甘油基系(環氧系)、胺系、苯基系、苯基胺基系、(甲基)丙烯酸系、乙烯基系的化合物等。
作為表面處理,就表面處理的容易性而言,較佳為利用環氧基矽烷系、胺基矽烷系、丙烯酸矽烷系等的矽烷化合物的矽烷處理。就分散性、流動性、接著力優異這一觀點而言,表面處理劑可為選自縮水甘油基系、苯基胺基系、丙烯酸系及甲基丙烯酸系的化合物中的化合物。就保存穩定性的觀點而言,表面處理劑可為選自苯基系、丙烯酸系及甲基丙烯酸系的化合物中的化合物。
就防止覆晶連接時的齧入的觀點而言,填料的平均粒徑可為1.5 μm以下。就視認性(透明性)優異這一觀點而言,填料的平均粒徑可為1.0 μm以下。填料的粒徑是指粒子的長軸徑。
與無機填料相比,樹脂填料可於260℃等的高溫下賦予柔軟性,因此適合於提升耐回焊性。另外,樹脂填料因可賦予柔軟性,故亦有助於提升熱硬化性樹脂組成物的膜形成性。
以熱硬化性樹脂組成物的固體成分(溶媒以外的成分)整體為基準,填料的含量可為30質量%~90質量%、或40質量%~80質量%。若該含量為30質量%以上,則熱硬化性樹脂組成物的散熱性變高,另外,可進一步抑制空隙產生及吸濕率。若該含量為90質量%以下,則可抑制由黏度變高所引起的熱硬化性樹脂組成物的流動性的下降、及填料朝連接部的齧入(混入),因此存在連接可靠性進一步提升的傾向。
(e)助熔劑 本實施形態的熱硬化性樹脂組成物可進而含有助熔劑(即,顯示出助熔活性(去除氧化物及雜質的活性)的助熔活性劑)。作為助熔劑,例如可列舉:咪唑類及胺類等具有非共用電子對的含氮化合物、羧酸類、酚類及醇類。與醇等相比,有機酸(2-甲基戊二酸等羧酸等)強烈地顯現助熔活性,可進一步提升連接性及穩定性。
以熱硬化性樹脂組成物的固體成分(溶媒以外的成分)整體為基準,助熔劑的含量可為0.005質量%~10.0質量%或0.005質量%~0.05質量%。
本實施形態的熱硬化性樹脂組成物可進而含有離子捕捉劑、抗氧化劑、矽烷偶合劑、鈦偶合劑、調平劑等添加劑。添加劑可單獨使用一種、或將兩種以上組合使用。添加劑的含量只要以各添加劑的效果顯現的方式適宜調整即可。
將本實施形態的熱硬化性樹脂組成物於200℃下保持5秒時的硬化反應率可為80%以上、或90%以上。若於作為焊料熔融溫度以下的200℃下保持5秒時的熱硬化性樹脂組成物的硬化反應率為80%以上,則存在焊料於焊料熔融溫度以上的連接時的溫度下難以飛散及流動,連接可靠性及絕緣可靠性進一步提升的傾向。硬化反應率可藉由對加入至鋁盤中的未硬化及熱處理後的熱硬化性樹脂組成物(膜狀接著劑)10 mg進行示差掃描熱量測定來求出,所述示差掃描熱量測定使用DSC(珀金埃爾默公司製造的DSC-7型),且升溫速度為20℃/min、溫度範圍為30℃~300℃。例如於示差掃描熱量測定中,將未處理的樣品的發熱量ΔH(J/g)設為「ΔH1」,將於加熱板上進行200℃/5秒的熱處理後的樣品的發熱量ΔH(J/g)設為「ΔH2」,並藉由下式來算出硬化反應率。 硬化反應率(%)=(ΔH1-ΔH2)/ΔH1×100
當熱硬化性樹脂組成物的硬化反應(硬化系)為自由基聚合時,若熱硬化性樹脂組成物含有陰離子聚合性的環氧樹脂(特別是重量平均分子量未滿10000的環氧樹脂),則存在難以將硬化反應率調整成80%以上的情況。當熱硬化性樹脂組成物含有丙烯酸樹脂及環氧樹脂時,相對於丙烯酸樹脂80質量份,環氧樹脂的含量可為20質量份以下。
本實施形態的熱硬化性樹脂組成物可用於200℃以上的高溫下的壓接。另外,於使焊料等金屬熔融而形成連接的覆晶封裝中,顯現更優異的硬化性。
就生產性提升的觀點而言,本實施形態的接著劑層可為由事先準備的接著劑膜所形成的層。以下表示接著劑膜的製作方法的例子。
首先,視需要將熱硬化性樹脂、硬化劑、高分子成分、填料、其他添加劑等添加至有機溶媒中後,藉由攪拌混合、混練等來進行溶解或分散而製備樹脂清漆。繼而,使用刮刀式塗佈機、輥塗機、敷料器、模塗機、缺角輪塗佈機等將樹脂清漆塗佈於實施了脫模處理的基材膜上後,藉由加熱來減少有機溶媒,而於基材膜上形成接著劑膜。亦可利用於藉由加熱來減少有機溶媒前,將樹脂清漆旋塗於晶圓等上來形成膜後,進行溶媒乾燥的方法,而於晶圓上形成接著劑膜。
作為基材膜,只要是具有可經得起使有機溶媒揮發時的加熱條件的耐熱性者,則並無特別限制,可列舉:聚酯膜、聚丙烯膜、聚對苯二甲酸乙二酯膜、聚醯亞胺膜、聚醚醯亞胺膜、聚醚萘二甲酸酯膜、甲基戊烯膜等。作為基材膜,並不限於包含該些膜中的一種的單層的膜,亦可為包含兩種以上的膜的多層膜。
用於使有機溶媒自塗佈後的樹脂清漆中揮發的加熱的條件例如可為50℃~200℃、0.1分鐘~90分鐘的範圍。若對安裝後的空隙及黏度調整無影響,則可將加熱條件設為有機溶媒揮發至1.5%以下為止的條件。
<半導體用接著劑>
一實施形態的半導體用接著劑含有(a')重量平均分子量未滿10000的樹脂成分、(b)硬化劑、及(f)由下述通式(1):[化2]所表示的矽烷醇化合物。式中,R1
表示烷基、苯基或包含該些的組合的基,R2
表示伸烷基。於所述半導體裝置的製造方法中,為了形成接著劑層,亦可將該半導體用接著劑用作熱硬化性樹脂組成物。
本實施形態的半導體用接著劑可進而含有(c)重量平均分子量為10000以上的高分子成分、助熔劑、填料等。以下,對各成分進行說明。
(a')重量平均分子量未滿10000的樹脂成分 作為(a')重量平均分子量未滿10000的樹脂成分,並無特別限制,但可為與(b)硬化劑進行反應的化合物(熱硬化性樹脂)。重量平均分子量小的成分於加熱時分解等而可能成為空隙的原因,但藉由該成分與硬化劑進行反應,容易確保高耐熱性。作為(a)重量平均分子量未滿10000的樹脂成分,例如可列舉:環氧樹脂、丙烯酸樹脂等。當(a')重量平均分子量未滿10000的樹脂成分為熱硬化性樹脂時,可為與所述「(a)熱硬化性樹脂」相同的形態。
關於半導體接著劑的(d)硬化劑及其他形態可為與關於所述熱硬化性樹脂組成物的「(d)硬化劑」及其他形態相同的形態。
(f)矽烷醇化合物 就耐熱性的觀點而言,由所述通式(1)所表示的矽烷醇化合物於25℃下可為固體。就耐熱性、流動性的觀點而言,式(1)中的R1
可為烷基或苯基。R1
亦可為包含烷基與苯基的組合的基(烷基取代苯基或苯基烷基)。作為由R1
所表示的基,例如可列舉:苯基、丙基、苯基丙基、及苯基甲基。式(1)中的R2
並無特別限制,但就耐熱性的觀點而言,可為重量平均分子量為100~5000的伸烷基。R2
為重量平均分子量為100~5000的伸烷基的矽烷醇化合物通常具有約100~5000的範圍的重量平均分子量。就高反應性(硬化物強度)的觀點而言,矽烷醇化合物可為三官能矽烷醇。
藉由向半導體用接著劑中添加(f)矽烷醇化合物,流動性提升且空隙抑制性與高連接性進一步提升。若流動性提升(黏度下降),則於晶片接觸時容易排除捲入的空隙。(f)矽烷醇化合物具有高耐熱性,其熱重量減少量小。藉由使用耐熱性高的矽烷醇化合物,可進一步抑制空隙產生。若熱重量減少量小,則揮發成分少,因此空隙減少,可靠性(耐回焊性)亦進一步提升。
以半導體用接著劑(溶媒以外的成分)的總量為基準,(f)矽烷醇化合物的含量可為2質量%~20質量%,就高流動化與硬化物強度(接著力等)的觀點而言,亦可為2質量%~10質量%、或2質量%~9質量%。若該含量為2質量%以上,則就高流動化的觀點而言容易顯現更顯著的效果。若該含量為20質量%以下,則存在硬化後的強度增加且顯現特別高的接著力的傾向。推測若(f)矽烷醇化合物的含量小至某種程度,則環氧樹脂或丙烯酸樹脂的硬化物的比率變大,因此顯現更高的接著力。
半導體用接著劑可為膜狀,即接著劑膜。除樹脂清漆含有(f)矽烷醇化合物這一點以外,膜狀的半導體接著劑可藉由與所述接著劑膜的製作方法的例子相同的方法來製作。
本實施形態的半導體用接著劑例如於半導體晶片及配線電路基板各自的連接部相互電性連接的半導體裝置、或多個半導體晶片各自的連接部相互電性連接的半導體裝置中,可特別適宜地用於連接部的密封。
對使用本實施形態的半導體用接著劑的半導體裝置進行說明。半導體裝置中的連接部可為凸塊與配線的金屬接合、及凸塊與凸塊的金屬接合的任一種。於半導體裝置中,例如可使用經由半導體用接著劑而獲得電性連接的覆晶連接。半導體裝置的例子如圖4~圖7所示般。連接是於所述凸塊-凸塊間、凸塊-焊墊間、凸塊-配線間進行。
本實施形態的半導體裝置的製造方法可包括使用本實施形態的半導體用接著劑,將半導體晶片及配線電路基板、或多個半導體晶片彼此連接。本實施形態的半導體裝置的製造方法例如具備:經由半導體用接著劑而將半導體晶片及配線電路基板相互連接,並且將半導體晶片及配線電路基板各自的連接部相互電性連接而獲得半導體裝置的步驟,或經由半導體用接著劑而將多個半導體晶片相互連接,並且將多個半導體晶片各自的連接部相互電性連接而獲得半導體裝置的步驟。
於本實施形態的半導體裝置的製造方法中,可藉由金屬接合而將連接部相互連接。即,藉由金屬接合而將半導體晶片及配線電路基板各自的連接部相互連接、或藉由金屬接合而將多個半導體晶片各自的連接部相互連接。
於所述第一實施形態、第二實施形態或第三實施形態的半導體裝置中,本實施形態的半導體用接著劑亦可用作熱硬化性樹脂組成物。本實施形態的半導體用接著劑於高溫下具有高流動性,因此於使用加熱爐或加熱板作為用於正式壓接的加熱裝置的第三實施形態中特別有用。
作為使用本實施形態的半導體用接著劑的半導體裝置的製造方法的另一例,對圖8中所示的實施形態的半導體裝置600的製造方法進行說明。半導體裝置600中,具有基板本體20及作為連接部的配線(銅配線)15的基板(例如環氧玻璃基板)2與具有半導體晶片本體10、作為連接部的配線(例如銅柱、銅桿)15及凸塊30(連接凸塊、焊料凸塊)的半導體晶片1經由由半導體用接著劑所形成的接著劑層40而相互連接。半導體晶片1的配線15與基板2的配線15藉由凸塊30(連接凸塊、焊料凸塊)而電性連接。於基板本體20中的形成有配線15的表面上,除凸塊30的形成位置以外配置有阻焊劑70。對基板2中的配線15實施了鍍金。連接部的金屬為焊料(錫-銀)-金,只要熔點低的焊料達到熔點以上,便可連接。半導體裝置600可為將半導體晶片彼此連接而成者。即,可將其他半導體晶片代替基板2來與半導體晶片1連接。
於半導體裝置600的製造方法中,首先,將作為接著劑層40的半導體用接著劑(膜狀接著劑等)貼附於形成有阻焊劑70的基板2上。貼附可藉由加熱壓製、輥層壓、真空層壓等來進行。接著劑層40的供給面積及厚度根據半導體晶片1或基板2的尺寸、凸塊高度等而適宜設定。接著劑層40可貼附於半導體晶片1上,亦可於將本實施形態的半導體用接著劑貼附於半導體晶圓上後,藉由切割來將半導體晶圓個片化成半導體晶片1,藉此製作貼附有接著劑層40的半導體晶片1。將接著劑層40貼附於基板2或半導體晶片1上後,使用覆晶接合機等連接裝置(壓接裝置)將半導體晶片1的配線15上的凸塊30與基板2的配線15對位後,進行壓接(第一步驟,暫時壓接),然後將半導體晶片1與基板2加熱至凸塊30的熔點以上的溫度(第二步驟,正式壓接),而將半導體晶片1與基板2連接,並且以連接部得到密封的方式,藉由接著劑層40來填充半導體晶片1與基板2之間的空隙。正式壓接(正式連接步驟,第二步驟)只要以任一側的連接部的金屬變成熔點以上的方式進行即可。當凸塊30含有焊料時,能夠以凸塊30的溫度變成250℃以上的方式對半導體晶片1與基板2進行加熱。
暫時壓接(第一步驟)的連接負荷取決於凸塊數,但要考慮吸收凸塊的高度不均、控制凸塊變形量來設定。於暫時壓接(第一步驟)後,半導體晶片1與基板2間的連接部金屬亦可接觸。若於第一步驟中連接部金屬接觸或連接,則於第二步驟後容易形成金屬結合、及半導體用接著劑的齧入變少,因此特別容易獲得良好的連接性。
於暫時壓接(第一步驟)時,為了排除空隙,且半導體晶片1與基板2間的連接部金屬接觸或形成金屬結合,可增大負荷。若負荷大,則容易排除空隙,連接部的金屬亦容易接觸。負荷例如於半導體晶片的每1針(1個凸塊)中可為0.009 N~0.3 N。
就提升生產性的觀點而言,暫時壓接(第一步驟)可設為短時間。例如,暫時壓接的時間可為5秒以下,就提升生產性的觀點而言,亦可為3秒以下、或2秒以下。
暫時壓接(第一步驟)的溫度(壓接裝置的溫度)可低至壓接工具拾取(帶有半導體用接著劑的)半導體晶片時熱不會傳遞的程度。藉由將暫時壓接(第一步驟)的溫度(壓接裝置的溫度)設為高溫,能夠以可排除捲入時的空隙的方式提高半導體用接著劑的流動性。暫時壓接(第一步驟)的溫度(壓接裝置的溫度)可低於半導體用接著劑的反應開始溫度。為了縮短冷卻時間,可減小壓接工具拾取半導體晶片時的溫度與半導體晶片彼此或半導體晶片-基板間的接觸時(暫時壓接時)的溫度的差。該溫度差可為100℃以下或60℃以下,亦可固定(相同的設定溫度)。若溫度差為100℃以下,則壓接工具的冷卻所需的時間變短,生產性進一步提升。所謂反應開始溫度,是指使用DSC(珀金埃爾默公司製造,DSC-Pyirs1),並利用樣品量10 mg、升溫速度10℃/min、測定環境:空氣或氮氣環境的條件的示差掃描熱量測定中的開始(On-set)溫度。
正式壓接(第二步驟)中的加熱溫度必須將焊料的熔點以上的溫度施加至封裝。例如,若連接部的金屬為焊料,則較佳為230℃以上、330℃以下。若為低溫,則連接部的金屬不熔融,而不形成充分的金屬結合。若為高溫,則容易產生空隙,焊料容易飛散。
為了不僅形成金屬結合,而且促進半導體用接著劑的硬化,正式壓接(正式連接步驟、第二步驟)中的加熱溫度可高於半導體用接著劑的反應開始溫度。於正式連接步驟中促進半導體用接著劑的硬化,藉此可特別有效地抑制進一步的空隙產生及連接不良。
正式壓接的加熱(第二步驟)並無特別限制,例如可使用回焊爐、烘箱、加熱板等加熱裝置來進行。作為加熱裝置,例如可列舉:回焊爐(田村製作所(Tamura Corporation)製造)及潔淨烘箱(愛斯佩克(ESPEC)製造)等。
於正式壓接(第二步驟)中,於晶片-晶片、晶片-基板、晶片-晶圓、晶圓-晶圓等的連接的情況下,可將重物載置於該些之上,亦可利用夾具夾持該些。藉此,可更有效地抑制由半導體晶片間或半導體晶片與半導體用接著劑間的熱膨脹差所產生的翹曲及連接不良。
當使用壓接機進行正式連接步驟(第二步驟)時,於壓接時壓接機的熱難以傳導至作為朝晶片側面露出的半導體用接著劑的焊點上。因此,有時於第二步驟後需要用以使焊點部分等半導體用接著劑的硬化變得充分的加熱處理。另一方面,若為了正式壓接(第二步驟)的加熱而使用如回焊爐、烘箱般的加熱爐,或加熱板等來進行,則可將熱整體地施加至被加熱體上,因此可縮短或去除第二步驟後的加熱處理。
於暫時壓接(第一步驟)中,可一次性壓接多個晶片。於在TSV結構的封裝中常見的堆疊壓接中,立體式地壓接多個晶片。於該情況下,亦可於將多個半導體晶片一個一個地堆積並進行暫時壓接的第一步驟後,於第二步驟中一次性地正式壓接多個晶片。 [實施例]
以下,列舉實施例來更具體地說明本發明。但是,本發明並不限定於以下的實施例。
1.主要與第一實施形態相關的研究例 1-1.接著劑膜的製作 以下表示用於接著劑膜的製作的化合物。
(a)熱硬化性樹脂 丙烯酸樹脂 ・乙氧基化異三聚氰酸三丙烯酸酯(新中村化學工業股份有限公司製造,A-9300) ・具有茀骨架的丙烯酸酯化合物(大阪燃氣化學(Osaka Gas Chemicals)股份有限公司製造,EA0200,丙烯醯基的官能基數:2) 環氧樹脂 ・具有三苯酚甲烷骨架的多官能固體環氧樹脂(日本環氧樹脂(Japan Epoxy Resins)股份有限公司製造,EP1032H60) ・雙酚F型液狀環氧樹脂(日本環氧樹脂股份有限公司製造,YL983U)
(b)硬化劑 ・二枯基過氧化物(日油股份有限公司製造,帕庫密爾(Percumyl)D) ・2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪異三聚氰酸加成物(四國化成股份有限公司製造,2MAOK-PW)
(c)高分子成分 ・苯氧基樹脂(東都化成股份有限公司製造,ZX1356,Tg:約71℃,重量平均分子量:約63000) ・丙烯酸橡膠(日立化成股份有限公司製造,KH-C865,Tg:0℃~12℃,重量平均分子量:450000~650000)
(d)填料 無機填料 ・二氧化矽填料(雅都瑪(Admatechs)股份有限公司製造,SE2050,平均粒徑:0.5 μm)・利用環氧基矽烷進行了表面處理的二氧化矽填料(雅都瑪股份有限公司製造,SE2050SEJ,平均粒徑:0.5 μm) ・甲基丙烯酸表面處理奈米二氧化矽填料(雅都瑪股份有限公司製造,YA050CSM,以下表述為「SM奈米二氧化矽」,平均粒徑:約50 nm) 樹脂填料 ・有機填料(日本羅門哈斯(Rohm and Haas Japan)(股份)製造,EXL-2655:核殼型有機微粒子)
(e)助熔劑(羧酸) ・2-甲基戊二酸(奧德里奇(Aldrich)製造,熔點:約77℃,以下表述為「戊二酸」)
(製造例1-1) 以不揮發成分(固體成分,溶媒以外的成分)的濃度變成60質量%的方式,將表1中所示的調配量(單位:質量份)的丙烯酸樹脂(A9300)、無機填料(SE2050、SE2050SEJ及SM奈米二氧化矽)及樹脂填料(EXL2655)添加至作為溶媒的甲基乙基酮中。繼而,添加與添加至甲基乙基酮中的丙烯酸樹脂及無機填料的合計量相同的量的Φ1.0 mm、Φ2.0 mm的珠粒,並利用珠磨機(日本福裏茨(Fritsch・Japan)股份有限公司製造,行星式微粉碎機P-7)攪拌30分鐘。其後,添加作為高分子成分的苯氧基樹脂(ZX1356),再次利用珠磨機攪拌30分鐘。攪拌後,添加硬化劑(帕庫密爾(Percumyl)D)並進行攪拌,藉由過濾來去除珠粒而獲得清漆。利用小型精密塗敷裝置(廉井精機股份有限公司製造)塗敷所獲得的清漆,並於潔淨烘箱(愛斯佩克製造)中對塗膜進行乾燥(70℃/10 min),而獲得接著劑膜。
(製造例1-2及製造例1-3) 除如表1中所示般變更所使用的材料以外,以與製造例1-1相同的方式獲得接著劑膜。助熔劑是與熱硬化性樹脂同時添加。
1-2.半導體裝置的製造 (實施例1-1) 準備具有對向的平台及壓接頭的2台按壓構件I、按壓構件II(FCB3,松下製造),並將按壓構件I用作暫時壓接用構件,將按壓構件II用作正式壓接用按壓構件,藉由以下的程序來製造半導體裝置。 將所製作的製造例1-1的接著劑膜切下(8 mm×8 mm×0.045 mmt),並貼附於半導體晶片(晶片尺寸:10 mm×10 mm×0.4 mmt,連接部的金屬:Au,製品名:WALTS-TEG IP80,沃爾茨(WALTS)製造)上。繼而,將貼附有接著劑膜的半導體晶片供給至作為暫時壓接用按壓構件的按壓構件I的平台上。以各自的連接部相互對向的方式,將該平台上的半導體晶片與帶有焊料凸塊的半導體晶片(晶片尺寸:7.3 mm×7.3 mm×0.15 mmt,連接部的金屬:銅柱+焊料,凸塊高度:銅柱+焊料合計約為45 μm,凸塊數為1048針,間距為80 μm,製品名:WALTS-TEG CC80,沃爾茨製造)對位。其後,將包含半導體晶片、接著劑膜及半導體晶片的積層體夾在壓接頭與平台之間來進行加壓及加熱,而將半導體晶片彼此暫時壓接。繼而,利用作為正式壓接用按壓構件的按壓構件II夾持暫時壓接後的積層體,藉此進行加熱及加壓,而將半導體晶片彼此電性連接。 暫時壓接條件及正式壓接條件如下所述。該些條件是以關於所獲得的半導體裝置的空隙評價及連接評價變成「A」的方式來設定。 ・暫時壓接條件 壓接頭的溫度:80℃,負荷:75 N,平台溫度:80℃ ・正式壓接條件 壓接頭的溫度:280℃,負荷:75 N,平台溫度:80℃ 一面使2台按壓構件I、按壓構件II同時並行地運轉,一面連續地製造多個半導體裝置。將暫時壓接及正式壓接所需的製造時間、半導體裝置每1個封裝(Package,PKG)的製造時間、及每1小時的半導體裝置的生產數(Units Per Hour,UPH)的結果示於表2中。
1-3.評價 (1)空隙評價 利用超音波影像診斷裝置(Insight-300,英賽特(Insight)製造)拍攝所獲得的半導體裝置的外觀圖像,並利用掃描器GT-9300UF(愛普生(EPSON)公司製造)取入半導體晶片上的接著劑層的圖像。使用圖像處理軟體Adobe Photoshop(註冊商標),藉由色調修正、二灰階化來識別空隙部分,並藉由直方圖來算出接著劑層中的空隙部分所佔的比例。將半導體晶片上的接著劑層的面積設為100%。將空隙的專有面積為10%以下的情況判定為「A」,將超過10%的情況判定為「B」。
(2)連接評價 使用萬用表(愛德萬測試(ADVANTEST)製造,商品名「R6871E」)測定所製作的半導體裝置的連接電阻值,藉此評價安裝後的初期導通。將周邊設備部分的內周的初期連接電阻值為45 Ω以下、且外周的初期連接電阻值為85 Ω以下的情況設為「A」,將內周的初期連接電阻值超過45 Ω的情況、外周的初期連接電阻值超過85 Ω的情況、及未導通(未顯示電阻值)的情況全部設為「B」。
(比較例1-1) 一面於相同的壓接條件下使2台按壓構件I、按壓構件II同時平行地運轉,一面使用製造例1的接著劑膜並藉由以下的程序來製造多個半導體裝置。 於按壓構件I、按壓構件II各自的平台上,將半導體晶片與帶有凸塊的半導體晶片對位。其後,一面利用按壓構件的壓接頭與平台進行加壓,一面於1秒內使壓接頭的溫度升溫至280℃為止後,於該狀態下保持2秒。藉此,將半導體晶片與帶有凸塊的半導體晶片相互壓接,並且進行電性連接。壓接所耗費的時間的合計為3秒。其後,將壓接頭的溫度自280℃冷卻至半導體晶片供給溫度的80℃為止。所述壓接的條件是以半導體裝置的空隙評價及連接評價變成「A」的方式來設定。 將各階段所需的製造時間、半導體裝置每1個封裝(PKG)的製造時間、及每1小時的封裝的生產數(UPH)的結果示於表2中。
(實施例1-2) 除使用製造例1-2的接著劑膜以外,以與實施例1相同的方式製造半導體裝置。將結果示於表3中。
(比較例1-2) 除使用製造例1-2的接著劑膜以外,以與比較例1相同的方式製造半導體裝置。將結果示於表3中。
(實施例1-3) 除使用製造例1-3的接著劑膜以外,以與實施例1相同的方式製造半導體裝置。將結果示於表4中。
(比較例1-3) 使用製造例1-3的接著劑膜,於1秒內使壓接頭的溫度升溫至280℃為止後,保持4秒,且壓接所耗費的時間的合計為5秒,除此以外,以與比較例1相同的方式製造半導體裝置。將結果示於表4中。
如根據表2~表4的結果而明確般,根據本實施形態的方法,可縮短半導體裝置的製造時間,並可增多每1小時的半導體裝置的生產數(UPH)。
2.主要與第一實施形態相關的研究例 2-1.接著劑膜的製作 以下表示用於接著劑膜的製作的化合物。
(a)熱硬化性樹脂 丙烯酸樹脂 ・具有源自茀的骨架的丙烯酸酯(大阪燃氣化學股份有限公司製造,EA0200,丙烯醯基的數量:2)
(b)硬化劑 ・二枯基過氧化物(日油股份有限公司製造,帕庫密爾(Percumyl)D)
(c)高分子成分 ・丙烯酸橡膠(日立化成股份有限公司製造,KH-C865,Tg:0℃~12℃,重量平均分子量:450000~650000)
(d)填料 無機填料 ・二氧化矽填料(雅都瑪股份有限公司製造,SE2050,平均粒徑:0.5 μm) ・利用環氧基矽烷進行了表面處理的二氧化矽填料(雅都瑪股份有限公司製造,SE2050SEJ,平均粒徑:0.5 μm) ・甲基丙烯酸表面處理奈米二氧化矽填料(雅都瑪股份有限公司製造,YA050CSM,以下表述為「SM奈米二氧化矽」,平均粒徑:約50 nm) 樹脂填料 ・有機填料(日本羅門哈斯(股份)製造,EXL-2655:核殼型有機微粒子)
(製造例2-1) 以不揮發成分(固體成分,溶媒以外的成分)的濃度變成60質量%的方式,將表5中所示的調配量(單位:質量份)的丙烯酸樹脂(A9300)、無機填料(SE2050、SE2050SEJ及SM奈米二氧化矽)及樹脂填料(EXL2655)添加至作為溶媒的甲基乙基酮中。繼而,添加與固體成分相同的量的Φ1.0 mm、Φ2.0 mm的珠粒,並利用珠磨機(日本福裏茨股份有限公司製造,行星式微粉碎機P-7)攪拌30分鐘。其後,添加作為高分子成分的苯氧基樹脂(ZX1356),再次利用珠磨機攪拌30分鐘。攪拌後,添加硬化劑(帕庫密爾(Percumyl)D)並進行攪拌,藉由過濾來去除珠粒而獲得清漆。利用小型精密塗敷裝置(廉井精機股份有限公司製造)塗敷所獲得的清漆,並於潔淨烘箱(愛斯佩克製造)中對塗膜進行乾燥(70℃/10 min),而獲得接著劑膜。
針對所獲得的接著劑膜,藉由下述的方法來測定暫時壓接步驟時的溫度下的熔融黏度。
[熔融黏度的測定] 利用流變計(日本安東帕股份有限公司製造,MCR301),於樣品厚度:400 μm,升溫速度10℃/min,頻率:1 Hz的條件下,使用測定夾具(可拋式板(直徑8 mm)及可拋式樣品盤)測定表6中所示的暫時壓接步驟時的壓接頭溫度(℃)下的熔融黏度。將結果示於表6中。
2-2.半導體裝置的製造 (實施例1) 準備具有對向的平台及壓接頭的2台按壓構件I、按壓構件II(FCB3,松下製造),並將按壓構件I用作暫時壓接用構件,將按壓構件II用作正式壓接用按壓構件,藉由以下的程序來製造半導體裝置。 將所製作的製造例2-1的接著劑膜切下(8 mm×8 mm×0.045 mmt),並貼附於半導體晶片(晶片尺寸:10 mm×10 mm×0.4 mmt,連接部的金屬:Au,製品名:WALTS-TEG IP80,沃爾茨製造)上。繼而,將貼附有接著劑膜的半導體晶片供給至作為暫時壓接用按壓構件的按壓構件I的平台上。以各自的連接部相互對向的方式,將該平台上的半導體晶片與帶有焊料凸塊的半導體晶片(晶片尺寸:7.3 mm×7.3 mm×0.15 mmt,連接部的金屬:銅柱+焊料,凸塊高度:銅柱+焊料合計約為45 μm,凸塊數為1048針,間距為80 μm,製品名:WALTS-TEG CC80,沃爾茨製造)對位。其後,將包含半導體晶片、接著劑膜及半導體晶片的積層體夾在壓接頭與平台之間來進行加壓及加熱,並以連接部彼此接觸的方式將半導體晶片彼此暫時壓接。繼而,利用作為正式壓接用按壓構件的按壓構件II夾持暫時壓接後的積層體,藉此進行加熱及加壓,而將半導體晶片彼此電性連接。暫時壓接條件及正式壓接條件如表6中所示般。於暫時壓接及正式壓接的任一者中,平台溫度均為80℃,壓接時間均為2秒。
(實施例2-2~實施例2-8) 除如表2中所示般變更暫時壓接步驟及正式壓接步驟中的壓接頭的溫度、及負荷以外,以與實施例1相同的方式製造實施例2-2~實施例2-8的半導體裝置。
2-3.評價 對所獲得的半導體裝置進行空隙評價及連接評價。
[空隙評價] 利用超音波影像診斷裝置(Insight-300,英賽特製造)拍攝所獲得的半導體裝置的外觀圖像,並利用掃描器GT-9300UF(愛普生公司製造)取入半導體晶片上的接著劑層的圖像,然後使用圖像處理軟體Adobe Photoshop(註冊商標),藉由色調修正、二灰階化來識別空隙部分,並藉由直方圖來算出空隙部分所佔的比例。將半導體晶片上的接著劑層的面積設為100%。將空隙的專有面積為5%以下的情況評價為「A」,將超過5%的情況設為「B」。將結果示於表6中。
[連接評價] 使用萬用表(愛德萬測試製造,商品名「R6871E」)測定所製作的半導體裝置的連接電阻值,藉此評價暫時壓接步驟後及正式壓接步驟後的導通。暫時壓接步驟後,將於周邊設備部分中導通(顯示電阻值)的情況設為「A」,將未導通(未顯示電阻值)的情況設為「B」。正式壓接步驟後,將周邊設備部分的內周的初期連接電阻值為45Ω以下、且外周的初期連接電阻值為85Ω以下的情況設為「A」,將內周的初期連接電阻值超過45Ω的情況、外周的初期連接電阻值超過85Ω的情況、及未導通(未顯示電阻值)的情況全部設為「B」。將結果示於表6中。
根據表6中的實施例2-1~實施例2-5與實施例2-6~實施例2-8的比較,確認於暫時壓接步驟時的壓接頭溫度下,接著劑層的熔融黏度為7000Pa‧s以下有助於抑制空隙的產生及提升半導體裝置的可靠性。
3.主要與第二實施形態相關的研究例
3-1.原材料
以下表示實施例中所使用的一次性連接用片材。
‧尼特氟龍(Nitoflon)900UL(日東電工股份有限公司,厚度50μm、100μm)
‧尤匹萊克斯(Upilex)SGA(宇部興產股份有限公司,50 μm、100 μm(50 μm×2)) ・鋁箔(住輕鋁箔股份有限公司,100 μm(20 μm×5))
以下表示實施例中所使用的化合物。 (a)熱硬化性樹脂 環氧樹脂 ・含有三苯酚甲烷骨架的多官能固體環氧樹脂(EP1032H60,日本環氧樹脂股份有限公司,重量平均分子量:800~2000) ・雙酚F型液狀環氧樹脂(YL983U,日本環氧樹脂股份有限公司,分子量:約336) ・可撓性半固體狀環氧樹脂(YL7175-1000,日本環氧樹脂股份有限公司,重量平均分子量:1000~5000) 丙烯酸樹脂 ・茀骨架丙烯酸酯樹脂(EA0200,大阪燃氣化學股份有限公司,二官能基,分子量:約546)
(b)硬化劑 ・2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪異三聚氰酸加成物(2MAOK-PW,四國化成股份有限公司製) ・二枯基過氧化物(帕庫密爾(Percumyl)D,日油股份有限公司)
(c)高分子成分 ・苯氧基樹脂(ZX1356-2,東都化成股份有限公司,Tg:約71℃,重量平均分子量:約63000) ・丙烯酸橡膠(KH-C865,日立化成製造,Tg:0℃~12℃,重量平均分子量:450000~650000)
(d)填料 樹脂填料 ・有機填料(EXL-2655,日本羅門哈斯股份有限公司,核殼型有機微粒子) 無機填料 ・二氧化矽填料(SE2050,雅都瑪股份有限公司,平均粒徑為0.5 μm) ・甲基丙烯酸表面處理奈米二氧化矽填料(YA050C-SM,雅都瑪股份有限公司,平均粒徑約為50 nm)
(e)助熔劑 ・2-甲基戊二酸(奧德里奇,熔點約為77℃)
添加劑 ・3-甲基丙烯醯氧基丙基三甲氧基矽烷(OFS6030,東麗道康寧(Dow Corning Toray)股份有限公司)
3-2.熱硬化性樹脂組成物的製作 以表7中所示的調配比例將各種原材料混合,而製備熱硬化性樹脂組成物A及熱硬化性樹脂組成物B。以下表示具體的製作方法。以不揮發成分(固體成分)的濃度變成60質量%的方式,將熱硬化性樹脂、填料、及視需要的助熔劑添加至甲基乙基酮中。其後,將與固體成分相同質量的Φ1.0 mm、Φ2.0 mm的珠粒添加至該混合液中,並利用珠磨機(日本福裏茨股份有限公司製造,行星式微粉碎機P-7)攪拌30分鐘。向混合液中添加高分子成分,並利用珠磨機攪拌30分鐘。攪拌後,添加硬化劑及視需要的添加劑並進行攪拌,藉由對混合液進行過濾來去除珠粒,而獲得作為熱硬化性樹脂組成物A或熱硬化性樹脂組成物B的濾液。
3-3.接著劑膜的製作 利用小型精密塗敷裝置(廉井精機)塗敷所製作的熱硬化性樹脂組成物A或熱硬化性樹脂組成物B,並於潔淨烘箱(愛斯佩克製造)中進行乾燥(70℃/10 min),而獲得接著劑膜。
3-4.半導體裝置的製造 將具有8 mm×8 mm×0.045 mmt的尺寸的接著劑膜貼附於半導體晶片(10 mm,0.4 mm厚,連接部金屬:Au,製品名:WALTS-TEG IP80,沃爾茨製造)上。經由接著膜而使該帶有接著膜的半導體晶片接觸帶有焊料凸塊的半導體晶片(晶片尺寸:7.3 mm×7.3 mm×0.15 mmt,凸塊高度:銅柱+焊料高度合計約為45 μm,凸塊數為1048針,間距為80 μm,製品名:WALTS-TEG CC80,沃爾茨製造),並利用FCB3(松下製造,壓接頭面積:7.3 mm×7.3 mm)將其暫時壓接,而製作積層體。將FCB3的壓接頭的溫度設定成130℃,於50 N的壓力下加熱加壓3秒,藉此暫時壓接使用熱硬化性樹脂組成物A的積層體。將FCB3的壓接頭的溫度設定成130℃,於100 N的壓力下加熱及加壓3秒,藉此暫時壓接使用熱硬化性樹脂組成物B的積層體。準備9個暫時壓接後的積層體,並於壓接頭的面積為100 mm×100 mm的一次性連接用裝置(阿爾法設計(Alpha Design)製造,HTB-MM)的平台上設置9個積層體。設置後,將100 mm×100 mm的一次性連接用片材蓋在積層體上,並一次性地進行正式壓接,而獲得半導體裝置。正式壓接是藉由將平台溫度設定成80℃,將壓接頭的溫度設定成250℃,並於900 N(每1個積層體為100 N)的壓力下加熱及加壓5秒來進行。
3-5.評價 [250℃下的一次性連接用片材的儲存彈性模數] 使用彈性模數測定裝置RSA2(流變科學有限公司(Rheometric Scientific,Inc.)),一面以頻率10 Hz、升溫速度5℃/min的條件自-30℃升溫至300℃為止,一面測定自一次性連接用片材中切出的寬度4 mm、長度40 mm的試驗片的黏彈性。根據測定結果來求出250℃下的儲存彈性模數。
[250℃下的一次性連接用片材的位移量測定] 250℃下的一次性連接用片材的位移量是使用機電式萬能試驗機(英斯特朗製造,5900系列),Bluehill3軟體來測定。將一次性連接用片材設置於250℃的槽內,使用具有直徑8 μm的圓形的端面的棒狀的按壓用治具,進行使一次性連接用片材的主面與按壓用治具的端面成為平行的方向擠壓的壓縮試驗。利用按壓用治具,以0.001 mm/sec的速度對一次性連接用片材施加100 N(約2 MPa)的負荷。將壓縮負荷自0 N變成100 N後經過5秒、且負荷於100 N下穩定的時間點的位移量記錄為一次性連接用片材的膜厚的位移量。
[連接評價] 於正式壓接後,使用萬用表(愛德萬測試製造,R6871E)測定半導體裝置可否初期導通。將周邊設備部分的內周的初期連接電阻值為40 Ω以下,外周的初期連接電阻值為85 Ω以下的半導體裝置評價為OK,將高於其的電阻值或未連接的半導體裝置評價為NG。於9個半導體裝置之中變成OK評價的數量為全部9個的情況下,將綜合評價判定為A,將其以外判定為B。
將使用熱硬化性樹脂組成物A及各種一次性連接用片材來一次性地製造半導體裝置的結果示於表8中。
將使用熱硬化性樹脂組成物B及各種一次性連接用片材來一次性地製造半導體裝置的結果示於表9中。
根據表8及表9的結果,確認當一次性地正式壓接多個半導體晶片與多個其他半導體晶片時,藉由使用具有250℃下的10 GPa以下的儲存彈性模數、及250℃下的40 μm以上的位移量的一次性連接用片材,可更有效率地製造良好的連接的半導體裝置。
4.主要與第三實施形態相關的研究例 4-1.接著劑膜的製作 以下表示用於接著劑膜的製作的化合物。
(a)熱硬化性樹脂 丙烯酸樹脂 ・乙氧基化異三聚氰酸三丙烯酸酯(新中村化學工業股份有限公司製造,A-9300,丙烯醯基的官能基數:3) ・具有源自茀的骨架的丙烯酸酯化合物(大阪燃氣化學股份有限公司製造,EA0200,丙烯醯基的官能基數:2)
(b)硬化劑 ・二枯基過氧化物(日油股份有限公司製造,帕庫密爾(Percumyl)D)
(c)高分子成分 ・苯氧基樹脂(東都化成股份有限公司製造,ZX1356,Tg:約71℃,重量平均分子量:約63000) ・丙烯酸橡膠(日立化成股份有限公司製造,KH-C865,Tg:0℃~12℃,重量平均分子量:450000~650000)
(d)填料 無機填料 ・二氧化矽填料(雅都瑪股份有限公司製造,SE2050,平均粒徑:0.5 μm)・利用環氧基矽烷進行了表面處理的二氧化矽填料(雅都瑪股份有限公司製造,SE2050SEJ,平均粒徑:0.5 μm) ・甲基丙烯酸表面處理奈米二氧化矽填料(雅都瑪股份有限公司製造,YA050CSM,以下表述為「SM奈米二氧化矽」,平均粒徑:約50 nm) 樹脂填料 ・有機填料(日本羅門哈斯(股份)製造,EXL-2655:核殼型有機微粒子)
(製造例4-1) 以不揮發成分(固體成分,溶媒以外的成分)的濃度變成60質量%的方式,將表1中所示的調配量(單位:質量份)的丙烯酸樹脂(A9300)、無機填料(SE2050、SE2050SEJ及SM奈米二氧化矽)及樹脂填料(EXL2655)添加至作為溶媒的甲基乙基酮中。繼而,添加與添加至甲基乙基酮中的丙烯酸樹脂及無機填料的合計量相同的量的Φ1.0 mm、Φ2.0 mm的珠粒,並利用珠磨機(日本福裏茨股份有限公司製造,行星式微粉碎機P-7)攪拌30分鐘。其後,添加作為高分子成分的苯氧基樹脂(ZX1356),再次利用珠磨機攪拌30分鐘。攪拌後,添加硬化劑(帕庫密爾(Percumyl)D)並進行攪拌,藉由過濾來去除珠粒而獲得清漆。利用小型精密塗敷裝置(廉井精機股份有限公司製造)塗敷所獲得的清漆,並於潔淨烘箱(愛斯佩克製造)中進行乾燥(70℃/10 min),而獲得接著劑膜。
(製造例4-2) 除如表10中所示般變更所使用的材料以外,以與製造例4-1相同的方式獲得接著劑膜。
4-2.半導體裝置的製造 (實施例4-1) 將所製作的製造例4-1的接著劑膜切下(8 mm×8 mm×0.045 mmt),並貼附於半導體晶片(晶片尺寸:10 mm×10 mm×0.4 mmt,連接部的金屬:Au,製品名:WALTS-TEG IP80,沃爾茨製造)上。繼而,將貼附有接著劑膜的半導體晶片供給至作為暫時壓接用按壓構件所準備的按壓構件的平台上。以各自的連接部相互對向的方式,將該平台上的半導體晶片與帶有焊料凸塊的半導體晶片(晶片尺寸:7.3 mm×7.3 mm×0.15 mmt,連接部的金屬:銅柱+焊料,凸塊高度:銅柱+焊料合計約為45 μm,凸塊數為1048針,間距為80 μm,製品名:WALTS-TEG CC80,沃爾茨製造)對位。其後,將包含半導體晶片、接著劑膜及半導體晶片的積層體夾在壓接頭與平台之間來進行加壓及加熱,而將半導體晶片彼此暫時壓接。
繼而,將所獲得的積層體搬送至回焊爐中,將最高溫度設為260℃並加熱600秒,藉此將晶片-晶片間電性連接。藉由暫時壓接步驟來形成多個積層體,並將該些積層體一次性地搬送至回焊爐中,藉此一次性地製造多個半導體裝置。
於所述半導體裝置的製造中,以下述的連接評價變成A的方式設定條件。將半導體裝置每1個封裝(PKG)的暫時壓接步驟及加熱步驟各自所需的製造時間、半導體裝置每100個封裝(PKG)的製造時間的結果示於表11中。 ・暫時壓接條件 壓接頭的溫度:80℃,負荷:75 N,平台溫度:80℃
4-3.評價 [連接評價] 使用萬用表(愛德萬測試製造,商品名「R6871E」)測定所製作的半導體裝置的連接電阻值,藉此評價安裝後的初期導通。將周邊設備部分的內周的初期連接電阻值為45 Ω以下、且外周的初期連接電阻值為85 Ω以下的情況設為「A」,將內周的初期連接電阻值超過45 Ω的情況、外周的初期連接電阻值超過85 Ω的情況、及未導通(未顯示電阻值)的情況全部設為「B」。
(比較例4-1) 除於以下方面變更條件以外,以與實施例4-1相同的方式製造半導體裝置。於按壓構件的平台上將半導體晶片與帶有凸塊的半導體晶片對位。其後,一面利用按壓構件的壓接頭與平台進行加壓,一面於1秒內使壓接頭的溫度升溫至280℃為止後,於該狀態下保持2秒。藉此,將半導體晶片與帶有凸塊的半導體晶片相互壓接,並進行電性連接。壓接所耗費的時間的合計為3秒。其後,將壓接頭的溫度自280℃冷卻至半導體晶片供給溫度的80℃為止。使用按壓構件來製造多個半導體裝置。於所述半導體裝置的製造中,以所述連接評價變成A的方式設定條件。將壓接步驟的各階段所需的製造時間、半導體裝置每100個封裝(PKG)的製造時間的結果示於表11中。
(實施例4-2) 作為加熱裝置,使用烘箱來代替回焊爐,並於260℃的烘箱內對積層體進行600秒加熱,除此以外,以與實施例4-1相同的方式進行半導體裝置的製造。將結果示於表12中。
(實施例4-3) 除使用製造例4-2的接著劑膜以外,以與實施例4-1相同的方式進行半導體裝置的製造。將結果示於表13中。
(比較例4-2) 除使用製造例4-2的接著劑膜以外,以與比較例4-1相同的方式進行半導體裝置的製造。將結果示於表13中。
(實施例4-4) 作為加熱裝置,使用烘箱來代替回焊爐,並於260℃的烘箱內對積層體進行600秒加熱,除此以外,以與實施例4-3相同的方式進行半導體裝置的製造。將結果示於表14中。
如表11~表14的結果而明確般,根據本實施形態的製造半導體裝置的方法,可縮短半導體裝置的製造時間。
5.主要與第三實施形態相關的研究例 5-1.原材料 以下表示實施例中所使用的化合物。 (i)重量平均分子量未滿10000的樹脂成分 (環氧樹脂) ・含有三苯酚甲烷骨架的多官能固體環氧樹脂(日本環氧樹脂股份有限公司,EP1032H60,以下設為「EP1032」),重量平均分子量:800~2000 ・雙酚F型液狀環氧樹脂(日本環氧樹脂股份有限公司,YL983U,以下設為「YL983」),重量平均分子量:約336 ・可撓性半固體狀環氧基(日本環氧樹脂股份有限公司,YL7175-1000,以下設為「YL7175」),重量平均分子量:1000~5000 (ii)硬化劑 ・2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪異三聚氰酸加成物(四國化成股份有限公司製造,2MAOK-PW,以下設為「2MAOK」) (iii)重量平均分子量為10000以上的高分子成分 ・苯氧基樹脂(東都化成股份有限公司,ZX1356-2,Tg:約71℃,Mw:約63000,以下設為「ZX1356」) (iv)助熔劑(羧酸) ・2-甲基戊二酸(奧德里奇,熔點約為77℃,以下設為「戊二酸」) (v)填料 (無機填料) ・二氧化矽填料(雅都瑪股份有限公司,SE2050,平均粒徑為0.5 μm) ・苯基表面處理奈米二氧化矽填料(雅都瑪股份有限公司,YA050C-SP,以下設為SP奈米二氧化矽,平均粒徑約為50 nm) (樹脂填料) ・有機填料(日本羅門哈斯(股份)公司製造,EXL-2655:核殼型有機微粒子) (vi)矽酮樹脂 準備具有由以下的化學式所表示的基本結構的矽酮樹脂。 [化3](矽烷醇化合物) ・固體矽烷醇,R1
:苯基或丙基,R2
:伸烷基,X:H(東麗道康寧(股份)公司製造,RSN-6018,分子量:約2000) ・固體矽烷醇,R1
:苯基,R2
:伸烷基,X:H(東麗道康寧(股份)公司製造,FCA107,分子量:約3000) (其他矽酮樹脂) ・液狀矽酮樹脂,R1
:甲基,R2
:伸烷基,X:CH3
(東麗道康寧(股份)公司製造,SR2402,分子量:約1500)
5-2.膜狀接著劑的製作 (實施例5-1) 以NV(不揮發成分)變成60質量%的方式,將環氧樹脂、2MAOK、2-甲基戊二酸、無機填料、樹脂填料及矽烷醇添加至有機溶媒(甲基乙基酮)中。其後,添加與固體成分相同質量的Φ1.0 mm、Φ2.0 mm的珠粒,並利用珠磨機(日本福裏茨股份有限公司製造,行星式微粉碎機P-7)攪拌30分鐘。其後,添加ZX1356,再次利用珠磨機攪拌30分鐘。藉由過濾來去除用於攪拌的珠粒。利用小型精密塗敷裝置(廉井精機)塗敷所製作的清漆(半導體用接著劑),並於潔淨烘箱(愛斯佩克製造)中對塗膜進行乾燥(70℃/10 min),而獲得接著劑膜。
(實施例5-2~實施例5-4、參考例5-1~參考例5-3) 除如表15中所示般變更所使用的材料以外,以與實施例5-1的膜狀接著劑的製作方法相同的方式製作膜狀接著劑。表15中,各材料的調配量為不揮發成分的調配量,單位為質量份。
5-3.評價 (1)熱重量減少量評價 將約10 mg的矽酮樹脂單體加入至Pt盤中,並利用熱重/差熱分析(Thermogravimetric/Differential Thermal Analysis,TG/DTA)測定裝置(精工儀器(Seiko Instruments)股份有限公司製造,EXSTAR6000)測定自35℃至400℃為止的熱重量減少。將升溫速度設為10℃/min。將260℃的熱重量減少量為20%以下的樣品評價為A,將260℃的熱重量減少量多於20%的情況評價為B。
(2)黏度測定 使用流變計MCR301(日本安東帕股份有限公司製造)。將半導體用接著劑供給至平台上,並以不產生空隙的方式設置測定夾具。將測定條件設為平台與測定夾具(f8 mm)的間隔0.3 mm,振盪角gamma=5%,頻率f=1 Hz,正向力FN=0 μN,升溫速度10℃/min,測定範圍30℃~180℃。根據黏度曲線來求出130℃(下述(3)的第一步驟的溫度)的黏度。
(3)半導體裝置的製造(連接評價) 將所製作的膜狀接著劑切下(7.3 mm×7.3 mm×0.045 mmt),貼附於帶有焊料凸塊的半導體晶片(晶片尺寸:7.3 mm×7.3 mm×0.15 mmt,凸塊高度:銅柱+焊料合計約為45 μm,凸塊數為1048,間距為80 μm,WALTS-TEG CC80型I,沃爾茨製造)上,並利用FCB3(松下製造)暫時壓接於接收側的半導體晶片(晶片尺寸:10 mm×10 mm×0.1 mmt,WALTS-TEG IP80,沃爾茨製造)上。將平台溫度設為80℃。以130℃/100 N/3 s進行對位後進行暫時壓接(第一步驟)。使暫時壓接後的積層體於最高溫度到達260℃的回焊爐(田村製作所製造)中穿過約600 s(10 min),藉此進行正式壓接,而獲得半導體裝置封裝的樣品。於第一步驟後及第二步驟後,分別使用萬用表(愛德萬測試製造,R6871E)測定可否初期導通。將周邊設備部(內周部)的連接電阻值為32.0 Ω~38.0 Ω的樣品評價為A(連接良好),將其以外的電阻值或開路(Open)評價為B(連接不良)。
(4)空隙評價 針對所述(3)中製作的樣品,於第一步驟後及第二步驟後,分別利用超音波影像診斷裝置(Insight-300,英賽特製造)拍攝外觀圖像,並利用掃描器GT-9300UF(愛普生公司製造)取入晶片上的包含半導體用接著劑的層(接著劑層)的圖像。使用圖像處理軟體Adobe Photoshop,並藉由色調修正、二灰階化來自圖像中識別空隙部分,並藉由直方圖來算出空隙部分所佔的比例。將晶片上的半導體用接著劑部分的面積設為100%,將空隙產生率為5%以下評價為A,將空隙產生率多於5%的情況評價為B。
(5)耐回焊性評價 使用密封材(日立化成製造,CEL9750ZHF10)對所述(3)中製作的封裝進行模塑(條件:180℃/6.75 MPa/90 s)。繼而,於潔淨烘箱(愛斯佩克製造)中以175℃進行5小時後硬化。其後,於電子器件工程聯合委員會(Joint Electron Device Engineering Council,JEDEC)2級條件下進行高溫吸濕後,進行回焊評價(回焊爐:田村製作所製造)(於回焊爐中穿過3次)。回焊後,將無剝離且連接良好的樣品設為A,將產生剝離或連接不良的樣品設為B。連接評價方法藉由與所述(3)相同的方法來進行。
確認添加有由通式(1)所表示的固體矽烷醇的實施例5-1~實施例5-4的半導體用接著劑於第一步驟後、第二步驟後均無空隙,可確保連接,並且亦滿足耐回焊性。
如以上所說明般,藉由一面將正式壓接用的按壓構件維持成高溫一面連續地製造半導體裝置的方法,可獲得充分地抑制空隙的產生、且連接可靠性優異的半導體裝置。另外,當一次性地正式壓接多個半導體晶片與多個基板及/或多個其他半導體晶片時,可獲得具有良好的連接的半導體裝置。
1‧‧‧半導體晶片
2‧‧‧基板
3‧‧‧積層體
5‧‧‧中介層
10‧‧‧半導體晶片本體
15、16‧‧‧配線
20‧‧‧基板本體
30、32、33‧‧‧凸塊
34‧‧‧貫穿電極
40‧‧‧接著劑層
41、44‧‧‧壓接頭
42、45‧‧‧平台
43‧‧‧暫時壓接用的按壓裝置
46‧‧‧正式壓接用的按壓裝置
47‧‧‧一次性連接用片材
50‧‧‧中介層本體
60‧‧‧加熱爐
70‧‧‧阻焊劑
100、200、300、400、500、600‧‧‧半導體裝置
圖1是表示將基板暫時壓接於半導體晶片上的步驟的一例的步驟圖。 圖2是表示藉由金屬接合來將半導體晶片的連接部與基板的連接部電性連接的步驟的一例的步驟圖。 圖3是表示使用一次性連接用片材,並藉由金屬接合來將半導體晶片的連接部與基板的連接部電性連接的步驟的一例的步驟圖。 圖4是表示藉由金屬接合來將半導體晶片的連接部與基板的連接部電性連接的步驟的一例的步驟圖。 圖5是表示半導體裝置的一實施形態的示意剖面圖。 圖6是表示半導體裝置的另一實施形態的示意剖面圖。 圖7是表示半導體裝置的另一實施形態的示意剖面圖。 圖8是表示半導體裝置的另一實施形態的示意剖面圖。
1:半導體晶片
2:基板
3:積層體
10:半導體晶片本體
15、16:配線
20:基板本體
30‧‧‧凸塊
40‧‧‧接著劑層
41‧‧‧壓接頭
42‧‧‧平台
43‧‧‧暫時壓接用的按壓裝置
Claims (17)
- 一種製造半導體裝置的方法,所述半導體裝置具備半導體晶片、基板及/或其他半導體晶片、以及介於該些之間的接著劑層,所述半導體晶片、所述基板及所述其他半導體晶片分別包含具有由金屬材料形成的表面的連接部,所述半導體晶片的連接部與所述基板及/或所述其他半導體晶片的連接部藉由金屬接合而電性連接,所述方法依次包括:利用對向的一對暫時壓接用按壓構件夾持具有所述半導體晶片,及所述基板、所述其他半導體晶片或包含相當於所述其他半導體晶片的部分的半導體晶圓,及配置於該些之間的所述接著劑層,且所述半導體晶片的連接部與所述基板或所述其他半導體晶片的連接部對向配置的積層體,藉此進行加熱及加壓,由此將所述基板、所述其他半導體晶片或所述半導體晶圓暫時壓接於所述半導體晶片上的步驟;以及利用有別於所述暫時壓接用按壓構件所準備的對向的一對正式壓接用按壓構件夾持所述積層體,藉此進行加熱及加壓,由此藉由金屬接合來將所述半導體晶片的連接部與所述基板或所述其他半導體晶片的連接部電性連接的步驟;於對所述積層體進行加熱及加壓時,將所述一對暫時壓接用按壓構件中的至少一個加熱至比形成所述半導體晶片的連接部的表面的金屬材料的熔點、及形成所述基板或所述其他半導體晶片的連接部的表面的金屬材料的熔點更低的溫度, 於對所述積層體進行加熱及加壓時,將所述一對正式壓接用按壓構件中的至少一個加熱至形成所述半導體晶片的連接部的表面的金屬材料的熔點、或者形成所述基板或所述其他半導體晶片的連接部的表面的金屬材料的熔點中的至少任一個熔點以上的溫度。
- 如申請專利範圍第1項所述的製造半導體裝置的方法,其中一面維持將所述一對正式壓接用按壓構件中的至少一個加熱至形成所述半導體晶片的連接部的表面的金屬材料的熔點、或者形成所述基板或所述其他半導體晶片的連接部的表面的金屬材料的熔點中的至少任一個熔點以上的溫度的狀態,一面連續地製造多個半導體裝置。
- 如申請專利範圍第2項所述的製造半導體裝置的方法,其中於對所述暫時壓接用按壓構件進行加熱的溫度下,所述接著劑層的熔融黏度為7000Pa‧s以下。
- 一種製造半導體裝置的方法,所述半導體裝置具備半導體晶片、基板及/或其他半導體晶片、以及介於該些之間的接著劑層,所述半導體晶片、所述基板及所述其他半導體晶片分別包含具有由金屬材料形成的表面的連接部,所述半導體晶片的連接部與所述基板及/或所述其他半導體晶片的連接部藉由金屬接合而電性連接,所述方法依次包括:利用對向的一對暫時壓接用按壓構件夾持具有所述半導體晶片,及所述基板、所述其他半導體晶片或包含相當於所述其他半 導體晶片的部分的半導體晶圓,及配置於該些之間的所述接著劑層,且所述半導體晶片的連接部與所述基板或所述其他半導體晶片的連接部對向配置的積層體,藉此進行加熱及加壓,由此將所述基板或所述其他半導體晶片或所述半導體晶圓暫時壓接於所述半導體晶片上的步驟;以及利用平台及與所述平台對向的壓接頭夾持配置於所述平台上的多個所述積層體或多個具有所述半導體晶片、所述半導體晶圓及所述接著劑的所述積層體與以覆蓋該些積層體的方式配置的一次性連接用片材,藉此一次性對多個所述積層體進行加熱及加壓,由此藉由金屬接合來將所述半導體晶片的連接部與所述基板或所述其他半導體晶片的連接部電性連接的步驟;於對所述積層體進行加熱及加壓時,將所述一對暫時壓接用按壓構件中的至少一個加熱至比形成所述半導體晶片的連接部的表面的金屬材料的熔點、及形成所述基板或所述其他半導體晶片的連接部的表面的金屬材料的熔點更低的溫度,將所述平台及所述壓接頭中的至少一個加熱至形成所述半導體晶片的連接部的表面的金屬材料的熔點、或者形成所述基板或所述其他半導體晶片的連接部的表面的金屬材料的熔點中的至少任一個熔點以上的溫度,所述一次性連接用片材具有250℃下的10GPa以下的儲存彈性模數及250℃下的40μm以上的位移量,所述位移量是於將具有直徑8μm的圓形的端面的棒狀的按 壓用治具,於所述一次性連接用片材的主面上,使所述主面與所述端面成為平行的方向擠壓的壓縮試驗中,於250℃的環境下且壓縮負荷為100N時的位移量。
- 一種製造半導體裝置的方法,所述半導體裝置具備半導體晶片、基板及/或其他半導體晶片、以及介於該些之間的接著劑層,所述半導體晶片、所述基板及所述其他半導體晶片分別包含具有由金屬材料形成的表面的連接部,所述半導體晶片的連接部與所述基板及/或所述其他半導體晶片的連接部藉由金屬接合而電性連接,所述方法依次包括:利用對向的一對暫時壓接用按壓構件夾持具有所述半導體晶片,及所述基板、所述其他半導體晶片或包含相當於所述其他半導體晶片的部分的半導體晶圓,及配置於該些之間的所述接著劑層,且所述半導體晶片的連接部與所述基板或所述其他半導體晶片的連接部對向配置的積層體,藉此進行加熱及加壓,由此將所述基板、所述其他半導體晶片或所述半導體晶圓暫時壓接於所述半導體晶片上的步驟;以及藉由金屬接合來將所述半導體晶片的連接部與所述基板或所述其他半導體晶片的連接部電性連接的步驟;於對所述積層體進行加熱及加壓時,將所述一對暫時壓接用按壓構件中的至少一個加熱至比形成所述半導體晶片的連接部的表面的金屬材料的熔點、及形成所述基板或所述其他半導體晶片的連接部的表面的金屬材料的熔點更低的溫度, 於藉由金屬接合來將所述半導體晶片的連接部與所述基板或所述其他半導體晶片的連接部電性連接的步驟中,在加熱爐內或加熱板上,將所述積層體加熱至形成所述半導體晶片的連接部的表面的金屬材料的熔點、或者形成所述基板或所述其他半導體晶片的連接部的表面的金屬材料的熔點中的至少任一個熔點以上的溫度。
- 如申請專利範圍第5項所述的製造半導體裝置的方法,其中於所述加熱爐內或所述加熱板上一次性對多個所述積層體進行加熱。
- 如申請專利範圍第5項或第6項所述的製造半導體裝置的方法,其中所述接著劑層是含有半導體用接著劑的層,所述半導體用接著劑包括:(a)具有未滿10000的重量平均分子量的樹脂成分、(b)硬化劑及(c)由下述通式(1)所表示的矽烷醇化合物,R1-R2-Si(OH)3 (1)式中,R1表示烷基或苯基,R2表示伸烷基。
- 如申請專利範圍第1項至第6項中任一項所述的製造半導體裝置的方法,其中所述接著劑層是包含熱硬化性樹脂組成物的層,所述熱硬化性樹脂組成物含有具有10000以下的分子量的熱硬化性樹脂及其硬化劑。
- 如申請專利範圍第8項所述的製造半導體裝置的方法,其中所述熱硬化性樹脂組成物進而含有具有10000以上的重量平均分子量的高分子成分。
- 如申請專利範圍第9項所述的製造半導體裝置的方法,其中所述高分子成分的重量平均分子量為30000以上,所述高分子成分的玻璃轉移溫度為100℃以下。
- 如申請專利範圍第1項至第6項中任一項所述的製造半導體裝置的方法,其中所述接著劑層是由事先準備的接著劑膜所形成的層。
- 如申請專利範圍第1項至第6項中任一項所述的製造半導體裝置的方法,其中使所述半導體晶片的連接部與所述基板或所述其他半導體晶片的連接部接觸,並且將所述基板或所述其他半導體晶片暫時壓接於所述半導體晶片上。
- 一種半導體用接著劑,用作形成如申請專利範圍第1項至第6項中任一項所述的製造半導體裝置的方法中的所述接著劑層的熱硬化性樹脂組成物,其包括:(a)具有未滿10000的重量平均分子量的樹脂成分、(b)硬化劑、(c)由下述通式(1)所表示的矽烷醇化合物及(e)助熔劑,R1-R2-Si(OH)3 (1)式中,R1表示烷基或苯基,R2表示伸烷基。
- 如申請專利範圍第13項所述的半導體用接著劑,其中所述R1為苯基。
- 如申請專利範圍第13項或第14項所述的半導體用接著劑,其中所述(c)矽烷醇化合物於25℃下為固體。
- 如申請專利範圍第13項或第14項所述的半導體用接著劑,其更包括(d)具有10000以上的重量平均分子量的高分子成分。
- 如申請專利範圍第16項所述的半導體用接著劑,其中所述(d)具有10000以上的重量平均分子量的高分子成分具有30000以上的重量平均分子量及100℃以下的玻璃轉移溫度。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-212990 | 2015-10-29 | ||
JP2015212990 | 2015-10-29 | ||
JP2016044788 | 2016-03-08 | ||
JP2016-044788 | 2016-03-08 | ||
JP2016115355 | 2016-06-09 | ||
JP2016-115355 | 2016-06-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201726863A TW201726863A (zh) | 2017-08-01 |
TWI714653B true TWI714653B (zh) | 2021-01-01 |
Family
ID=58630516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105134663A TWI714653B (zh) | 2015-10-29 | 2016-10-27 | 半導體用接著劑、製造半導體裝置的方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US10669454B2 (zh) |
JP (1) | JP6504263B2 (zh) |
KR (1) | KR102064584B1 (zh) |
CN (1) | CN108352333B (zh) |
TW (1) | TWI714653B (zh) |
WO (1) | WO2017073630A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10669454B2 (en) | 2015-10-29 | 2020-06-02 | Hitachi Chemical Company, Ltd. | Method for manufacturing semiconductor device including heating and pressuring a laminate having an adhesive layer |
US10734350B2 (en) * | 2016-05-09 | 2020-08-04 | Hitachi Chemical Company, Ltd. | Method for manufacturing semiconductor device |
KR102351843B1 (ko) * | 2017-06-07 | 2022-01-18 | 쇼와덴코머티리얼즈가부시끼가이샤 | 반도체용 필름형 접착제, 반도체 장치의 제조 방법 및 반도체 장치 |
JP7176532B2 (ja) * | 2017-12-18 | 2022-11-22 | 昭和電工マテリアルズ株式会社 | 半導体装置、半導体装置の製造方法及び接着剤 |
JP6926018B2 (ja) * | 2018-03-28 | 2021-08-25 | 東レエンジニアリング株式会社 | 転写基板ならびにこれを用いた実装方法および画像表示装置の製造方法 |
US11594513B2 (en) | 2018-04-27 | 2023-02-28 | Nitto Denko Corporation | Manufacturing method for semiconductor device |
TWI669794B (zh) * | 2018-09-27 | 2019-08-21 | 頎邦科技股份有限公司 | 基板與晶片之壓合步驟及其壓合裝置 |
KR20200064250A (ko) * | 2018-11-28 | 2020-06-08 | 삼성디스플레이 주식회사 | 본딩 장치 및 본딩 방법 |
JP2020164792A (ja) * | 2019-03-26 | 2020-10-08 | 日東電工株式会社 | 透明接着シートおよび剥離材付き透明接着シート |
US20210013099A1 (en) * | 2019-07-10 | 2021-01-14 | Facebook Technologies, Llc | Reducing the planarity variation in a display device |
WO2021208006A1 (zh) * | 2020-04-16 | 2021-10-21 | 华为技术有限公司 | 封装结构、电动车辆和电子装置 |
JP2022020286A (ja) * | 2020-07-20 | 2022-02-01 | 株式会社ディスコ | 保護部材形成装置で用いるシート、及び保護部材形成方法 |
US11842982B2 (en) | 2020-11-02 | 2023-12-12 | Samsung Electronics Co., Ltd. | Semiconductor package with curing layer between semiconductor chips |
TW202220154A (zh) * | 2020-11-02 | 2022-05-16 | 南韓商三星電子股份有限公司 | 半導體封裝 |
TWI807348B (zh) * | 2021-06-21 | 2023-07-01 | 矽品精密工業股份有限公司 | 覆晶作業及其應用之接合設備 |
WO2024151029A1 (ko) * | 2023-01-12 | 2024-07-18 | 주식회사 아모그린텍 | 방열기판 패키지 제조방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201211195A (en) * | 2010-03-15 | 2012-03-16 | Shinetsu Chemical Co | Adhesive composition and semiconductor wafer-protective sheet |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02280349A (ja) | 1989-04-20 | 1990-11-16 | Mitsubishi Electric Corp | バンプの形成方法およびバンプの接続方法 |
JP2786700B2 (ja) | 1989-11-29 | 1998-08-13 | 株式会社日立製作所 | 半導体集積回路装置の製造方法および製造装置 |
JP3815149B2 (ja) * | 1999-11-04 | 2006-08-30 | セイコーエプソン株式会社 | 部品実装方法および電気光学装置の製造方法 |
KR100894207B1 (ko) * | 2000-03-31 | 2009-04-22 | 히다치 가세고교 가부시끼가이샤 | 접착제 조성물, 그의 제조 방법, 이것을 사용한 접착 필름,반도체 탑재용 기판 및 반도체 장치 |
JP4024458B2 (ja) | 2000-06-27 | 2007-12-19 | 株式会社東芝 | 半導体装置の実装方法および半導体装置実装体の製造方法 |
JP4766831B2 (ja) | 2002-11-26 | 2011-09-07 | 株式会社村田製作所 | 電子部品の製造方法 |
US20060292823A1 (en) * | 2005-06-28 | 2006-12-28 | Shriram Ramanathan | Method and apparatus for bonding wafers |
JP4462218B2 (ja) * | 2006-03-28 | 2010-05-12 | Tdk株式会社 | チップ状電子部品の外部電極形成方法および外部電極形成装置 |
JP2008109009A (ja) | 2006-10-27 | 2008-05-08 | Sony Corp | 半導体装置の製造方法 |
JP5217260B2 (ja) | 2007-04-27 | 2013-06-19 | 住友ベークライト株式会社 | 半導体ウエハーの接合方法および半導体装置の製造方法 |
CN101903437B (zh) * | 2007-12-20 | 2012-09-26 | 日立化成工业株式会社 | 密封填充用膜状树脂组合物、使用该树脂组合物的半导体封装体和半导体装置的制造方法、以及半导体装置 |
JP5212176B2 (ja) * | 2008-03-26 | 2013-06-19 | 日立化成株式会社 | 半導体装置の製造方法 |
JP2012104782A (ja) * | 2010-11-15 | 2012-05-31 | Elpida Memory Inc | 半導体装置の製造方法および装置 |
US8710654B2 (en) * | 2011-05-26 | 2014-04-29 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
JP5866851B2 (ja) * | 2011-08-05 | 2016-02-24 | 日立化成株式会社 | 半導体装置の製造方法、フィルム状接着剤及び接着剤シート |
US9123830B2 (en) * | 2011-11-11 | 2015-09-01 | Sumitomo Bakelite Co., Ltd. | Manufacturing method for semiconductor device |
JP6047888B2 (ja) | 2012-02-24 | 2016-12-21 | 日立化成株式会社 | 半導体用接着剤及び半導体装置の製造方法 |
WO2013133015A1 (ja) | 2012-03-07 | 2013-09-12 | 東レ株式会社 | 半導体装置の製造方法および半導体装置の製造装置 |
JP5990940B2 (ja) * | 2012-03-09 | 2016-09-14 | 日立化成株式会社 | 回路接続構造体の製造方法 |
JP2013189555A (ja) * | 2012-03-14 | 2013-09-26 | Dexerials Corp | 熱硬化性エポキシ系接着剤、実装方法及び実装体 |
JP5978725B2 (ja) * | 2012-04-11 | 2016-08-24 | 日立化成株式会社 | 半導体装置の製造方法 |
JP5867259B2 (ja) * | 2012-04-17 | 2016-02-24 | 住友ベークライト株式会社 | 積層体の製造方法 |
JP2014060241A (ja) * | 2012-09-18 | 2014-04-03 | Toray Ind Inc | 半導体装置の製造方法 |
JP2014143316A (ja) | 2013-01-24 | 2014-08-07 | Sanyu Rec Co Ltd | フリップチップ部品の樹脂封止方法 |
JP6069143B2 (ja) * | 2013-09-11 | 2017-02-01 | デクセリアルズ株式会社 | アンダーフィル材、及びこれを用いた半導体装置の製造方法 |
US9761474B2 (en) * | 2013-12-19 | 2017-09-12 | Micron Technology, Inc. | Methods for processing semiconductor devices |
KR20170128445A (ko) * | 2015-03-30 | 2017-11-22 | 토레이 엔지니어링 컴퍼니, 리미티드 | 반도체 장치의 제조 방법, 반도체 실장 장치 및 반도체 장치의 제조 방법으로 제조된 메모리 디바이스 |
US10669454B2 (en) | 2015-10-29 | 2020-06-02 | Hitachi Chemical Company, Ltd. | Method for manufacturing semiconductor device including heating and pressuring a laminate having an adhesive layer |
DE102016213878B3 (de) * | 2016-07-28 | 2017-11-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gehäuse für einen Mikrochip mit einem strukturierten Schichtverbund und Herstellungsverfahren dafür |
-
2016
- 2016-10-26 US US15/770,792 patent/US10669454B2/en active Active
- 2016-10-26 WO PCT/JP2016/081774 patent/WO2017073630A1/ja active Application Filing
- 2016-10-26 KR KR1020187012722A patent/KR102064584B1/ko active IP Right Grant
- 2016-10-26 CN CN201680062779.7A patent/CN108352333B/zh active Active
- 2016-10-26 JP JP2017547837A patent/JP6504263B2/ja active Active
- 2016-10-27 TW TW105134663A patent/TWI714653B/zh active
-
2019
- 2019-11-12 US US16/680,547 patent/US11608455B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201211195A (en) * | 2010-03-15 | 2012-03-16 | Shinetsu Chemical Co | Adhesive composition and semiconductor wafer-protective sheet |
Also Published As
Publication number | Publication date |
---|---|
US10669454B2 (en) | 2020-06-02 |
CN108352333B (zh) | 2021-07-20 |
KR102064584B1 (ko) | 2020-01-10 |
KR20180066139A (ko) | 2018-06-18 |
JP6504263B2 (ja) | 2019-04-24 |
JPWO2017073630A1 (ja) | 2018-08-16 |
US20200095481A1 (en) | 2020-03-26 |
WO2017073630A1 (ja) | 2017-05-04 |
TW201726863A (zh) | 2017-08-01 |
CN108352333A (zh) | 2018-07-31 |
US11608455B2 (en) | 2023-03-21 |
US20180312731A1 (en) | 2018-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI714653B (zh) | 半導體用接著劑、製造半導體裝置的方法 | |
TWI721150B (zh) | 半導體裝置的製造方法 | |
JP2017045891A (ja) | 半導体装置及びそれを製造する方法 | |
JP2019137866A (ja) | 半導体用接着剤、並びに、半導体装置及びその製造方法 | |
TWI827512B (zh) | 半導體用膜狀接著劑、半導體裝置的製造方法及半導體裝置 | |
JP2017122193A (ja) | 半導体用接着剤及び半導体装置の製造方法 | |
JP2024023787A (ja) | 半導体装置の製造方法 | |
JP6544146B2 (ja) | 半導体装置及びそれを製造する方法 | |
JP7176532B2 (ja) | 半導体装置、半導体装置の製造方法及び接着剤 | |
JP6859708B2 (ja) | 半導体装置を製造する方法 | |
TWI820200B (zh) | 半導體裝置及其製造方法 | |
JP7172167B2 (ja) | 半導体装置の製造方法、及びそれに用いられる半導体用接着剤 | |
JP2017098463A (ja) | 半導体用接着剤、半導体装置の製造方法及び半導体装置 | |
JP6690308B2 (ja) | 半導体装置を製造する方法 | |
JP7238453B2 (ja) | 半導体用接着剤 | |
JP2017218532A (ja) | 半導体用接着剤、半導体装置、及び半導体装置の製造方法 | |
JP2022043572A (ja) | 半導体装置の製造方法 | |
CN116195040A (zh) | 制造半导体装置的方法及膜状黏合剂 | |
TW202028391A (zh) | 半導體用膜狀接著劑、半導體裝置及其製造方法 | |
JP2017103304A (ja) | 半導体用接着剤、半導体装置、及び半導体装置の製造方法 | |
JP2017103303A (ja) | 半導体用接着剤、半導体装置、及び半導体装置の製造方法 |