JP5866851B2 - 半導体装置の製造方法、フィルム状接着剤及び接着剤シート - Google Patents
半導体装置の製造方法、フィルム状接着剤及び接着剤シート Download PDFInfo
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- JP5866851B2 JP5866851B2 JP2011171978A JP2011171978A JP5866851B2 JP 5866851 B2 JP5866851 B2 JP 5866851B2 JP 2011171978 A JP2011171978 A JP 2011171978A JP 2011171978 A JP2011171978 A JP 2011171978A JP 5866851 B2 JP5866851 B2 JP 5866851B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- Engineering & Computer Science (AREA)
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Description
(実施例1〜6、比較例1〜5)
下記表2又は3に示す組成比(単位:質量部)にて各成分を配合し、以下の工程を経て、フィルム状接着剤を作製した。
ZX−1356−2:東都化成(株)社製、BPA/BPF共重合型フェノキシ樹脂(Mw:60000、樹脂のTg:71℃)。
FX−293:東都化成(株)社製、フルオレン骨格含有フェノキシ樹脂(Mw:44000、樹脂のTg:163℃)。
G−2050M:日油(株)社製、マープルーフ、MMA/GMA二元系ポリマー、分子量20万、Tg:74℃、エポキシ当量340。
NO−009:根上工業(株)社製、MMA/GMA/BMA三元系ポリマー、分子量45万、Tg:40℃、エポキシ当量340。
1032H60:ジャパンエポキシレジン(株)社製、トリス(ヒドロキシフェニル)メタン型固形エポキシ樹脂(5%重量減少温度:350℃、固形、融点60℃)。
YL−983U:ジャパンエポキシレジン(株)社製、Bis−F型液状エポキシ樹脂(エポキシ当量:184)。
HP−7200L:DIC(株)社製、ジシクロペンタジエン型エポキシ樹脂。
HP−5000:DIC(株)社製、ナフタレン変性ノボラック型エポキシ樹脂。
YL−7175:ジャパンエポキシレジン(株)社製、長鎖Bis−F変性型エポキシ樹脂。
アジピン酸:和光純薬工業(株)社製。
2PHZ:四国化成工業(株)社製、2−フェニル−4,5−ジヒドロキシメチルイミダゾール。
2MAOK:四国化成工業(株)社製、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジンイソシアヌル酸付加物。
HX−3941HP:旭化成ケミカルズ(株)社製、マイクロカプセル型硬化促進剤。
Z−6040:東レ・ダウコーニング(株)社製、3−グリシドキシプロピルトリメトキシシラン。
SE−2050:(株)アドマテックス社製、シリカ粒子(平均粒径0.5μm)。
SE2050−SEJ:(株)アドマテックス社製、グリシジルシラン表面処理シリカ粒子(平均粒径0.5μm)。
EXL−2655:ロームアンドハースジャパン(株)社製、コアシェルタイプ有機微粒子。
上記で得られた接着剤シートについて、下記の試験手順にしたがって、180℃における粘度、180℃におけるゲルタイム、250℃におけるゲルタイム、ウェハ裏面研削性、埋込性、接続性、及び接着力を評価した。結果を表3に示す。
上記で得られたフィルム状接着剤を所定のサイズ6φに打ち抜き、ガラスチップ(コーニングジャパン製、1737ガラス、15mm×15mm×0.7mm厚)に80℃/0.2MPa/3secの条件で圧着した。その後、厚み550μmの12mm×12mmのチップを載せ、フリップチップボンダー(松下電器産業株式会社製、商品名:FCB3)を用いて、加熱温度180℃、加圧圧力14N、加熱加圧時間10秒間の条件で圧着させて、ガラスチップ/フィルム状接着剤/チップが順次積層された形態のサンプルを作製した。このサンプルについて、圧着前後のフィルム状接着剤の体積変化を測定した。平行板プラストメータ法により、測定した体積変化から下記の粘度算出式により溶融粘度(粘度)を算出した。
η=8πFtZ4Z0 4/[3V2(Z0 4−Z4)]
η:溶融粘度(Pa・s)
F:荷重(N)
t:加熱加圧時間(秒)
Z0:初期厚み(m)
Z:加圧後厚み(m)
V:樹脂体積(m3)
フィルム状接着剤の180℃におけるゲルタイム及び250℃におけるゲルタイムは、JIS K5600−9−1に準じ、以下の手順で測定した。厚さ30μmのフィルム状接着剤を10mm□の打ち抜きパンチで打ち抜いたもの2枚(約0.01g)を重ね、更に4つ折りにして評価用サンプルを得た。その後、所定の温度(180℃、250℃)に熱せられているゲルタイム測定装置(ゲル化試験機、SYATEM SEIKO製)上に評価用サンプルを置き、竹串の先端にてかき混ぜ、樹脂溶融後、竹串の先端に一纏まりになるまでの時間(評価用サンプルを置いてから一纏まりになるまでの時間)を測定し、所定の温度におけるゲルタイムとした。測定の回数は同一サンプルにつき10回行い、平均の時間を算出した。
シリコンウェハ(厚み625μm)上に、温度80℃の条件で接着剤層を貼り付けて、バックグラインドテープ及び接着剤層付き半導体ウェハを得た。これをバックグラインダーに配置し、厚みが280μmとなるまでシリコンウェハの裏面を研削(バックグラインド)した。研削したウェハを目視及び顕微鏡観察で視察し、下記の基準に基づいてウェハ裏面研削性を評価した。
A:ウェハの破損及びマイクロクラックの発生がない。
B:ウェハの破損及びマイクロクラックの発生がある。
半導体素子搭載用支持部材として、プリフラックス処理によって防錆皮膜が形成された銅配線パターンを表面に有するガラスエポキシ基板のパターン表面にSR−AUS308を塗布したものを準備した。
A:ボイドがほとんどなく、ボイドが埋込面積の10%未満である。
B:ボイドが多く存在し、ボイドが埋込面積の10%以上である。
上記の埋込性評価と同様にしてサンプルを10個作製し、銅とハンダの接合部の断面観察、及び、382バンプのデイジーチェーン接続による導通の確認を行い、下記の基準に基づいて接続性を評価した。
A:デイジーチェーン接続及び断面観察のいずれにも問題が無い。
B:デイジーチェーン接続又は断面観察において問題が確認された。
Claims (5)
- ハンダバンプが形成された機能面を有する半導体ウェハの前記機能面に、熱硬化性樹脂とイミダゾール系硬化剤とを含有し、180℃における粘度が40〜350Pa・sであり、180℃におけるゲルタイムが15〜60秒であり、250℃におけるゲルタイムが3〜10秒である接着剤層を設けて接着剤層付き半導体ウェハを得る第1工程と、
前記接着剤層付き半導体ウェハの前記機能面とは反対側の面を研削して半導体ウェハを薄化する第2工程と、
前記薄化した半導体ウェハを接着剤層とともに切断して複数の半導体素子に切り分けて接着剤層付き半導体素子を得る第3工程と、
前記接着剤層付き半導体素子と、電極を有する他の半導体素子又は電極を有する半導体素子搭載用支持部材とを、前記ハンダバンプ及び前記電極が対向する方向に前記ハンダバンプが有するハンダの融点より低い温度で加圧する第4工程と、
加熱により前記ハンダバンプが有するハンダを溶融させて前記ハンダバンプと前記電極とを接合する第5工程と、を備える、半導体装置の製造方法。 - 前記接着剤層がフラックス成分を更に含有し、
前記第4工程の加圧をフラックス成分の融点又は軟化点より高い温度かつ前記ハンダバンプが有するハンダの融点より低い温度で行う、請求項1に記載の半導体装置の製造方法。 - 支持基材及び該支持基材上に設けられた粘着剤層を有するバックグラインドテープと、該バックグラインドテープの前記粘着剤層上に設けられ、熱硬化性樹脂とイミダゾール系硬化剤とを含有し、180℃における粘度が40〜350Pa・sであり、180℃におけるゲルタイムが15〜60秒であり、250℃におけるゲルタイムが3〜10秒である接着剤層と、を備える、接着剤シートを用いて前記接着剤層付き半導体ウェハを得る、請求項1又は2に記載の半導体装置の製造方法。
- 支持基材及び該支持基材上に設けられた粘着剤層を有するバックグラインドテープと、該バックグラインドテープの前記粘着剤層上に設けられ、熱硬化性樹脂とイミダゾール系硬化剤とを含有し、180℃における粘度が40〜350Pa・sであり、180℃におけるゲルタイムが15〜60秒であり、250℃におけるゲルタイムが3〜10秒である接着剤層と、を備える、接着剤シートであって、
ハンダバンプが形成された機能面を有する半導体ウェハを準備し、該半導体ウェハの前記機能面に前記接着剤シートの前記接着剤層を貼り付け、前記半導体ウェハの前記機能面とは反対側の面を研削して前記半導体ウェハを薄化し、半導体素子又は半導体素子搭載用支持部材に接着するために用いられる、接着剤シート。 - 前記接着剤層がフラックス成分を更に含有する、請求項4に記載の接着剤シート。
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