TWI721150B - 半導體裝置的製造方法 - Google Patents

半導體裝置的製造方法 Download PDF

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TWI721150B
TWI721150B TW106112128A TW106112128A TWI721150B TW I721150 B TWI721150 B TW I721150B TW 106112128 A TW106112128 A TW 106112128A TW 106112128 A TW106112128 A TW 106112128A TW I721150 B TWI721150 B TW I721150B
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semiconductor
semiconductor device
manufacturing
adhesive
connection
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TW106112128A
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TW201806044A (zh
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本田一尊
茶花幸一
佐藤慎
永井朗
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日商昭和電工材料股份有限公司
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Abstract

本發明揭示一種半導體裝置的製造方法。連接部包含金屬。所述方法包括：(a)第一步驟，以中間介隔有半導體用黏接劑的狀態，於低於連接部的金屬的熔點的溫度下，將半導體晶片及配線電路基板、或者半導體晶片彼此以各自的連接部相互接觸的方式壓接，獲得預連接體；(b)第二步驟，使用密封用樹脂將預連接體的至少一部分密封，獲得密封預連接體；以及(c)第三步驟，將密封預連接體於連接部的金屬的熔點以上的溫度下加熱，獲得密封連接體。

Description

半導體裝置的製造方法
本發明是有關於一種半導體裝置的製造方法。
以前，為了將半導體晶片與基板連接，廣泛應用使用金線等金屬細線的線接合方式。然而，為了對應針對半導體裝置的高功能‧高積體‧高速化等要求，於半導體晶片或基板上形成稱為凸塊的導電性突起而將半導體晶片與基板直接連接的倒裝晶片連接方式(FC(flip chip)連接方式)正在推廣。
FC連接方式已知：使用焊料、錫、金、銀、銅等來進行金屬接合的方法；施加超音波振動來進行金屬接合的方法；利用樹脂的收縮力來保持機械性接觸的方法等，但就連接部的可靠性的觀點而言，通常為使用焊料、錫、金、銀、銅等來進行金屬接合的方法。
例如，於半導體晶片與基板間的連接中，球形柵格陣列(Ball Grid Array，BGA)、晶片尺寸封裝(Chip Size Package，CSP)等中盛行使用的板上晶片(Chip On Board，COB)型連接方式亦為FC連接方式。
FC連接方式亦廣泛用於在半導體晶片上形成凸塊或配線而於半導體晶片間連接的堆疊晶片(Chip On Chip，COC)型連接方式。
[現有技術文獻]
[專利文獻]
專利文獻1：日本專利特開2008-294382
於強烈要求進一步的小型化、薄型化、高功能化的封裝體中，將所述的連接方式進行積層‧多段化的晶片堆疊(chip stack)型封裝體、封裝體堆疊封裝體(Package On Package，POP)、矽通孔(Through-Silicon Via，TSV)等亦開始廣泛普及。
藉由不為平面狀而是立體狀地配置，可縮小封裝體，因此多使用所述技術，所述技術對於半導體的性能提高及雜訊減少、安裝面積的削減、省電力化亦有效，作為下一代的半導體配線技術而受到關注。
就生產性提高的觀點而言，於晶圓上壓接(連接)半導體晶片後進行單片化來製作半導體封裝體的晶片堆疊晶圓(Chip On Wafer，COW)、將晶圓彼此壓接(連接)後進行單片化來製作半導體封裝體的晶圓堆疊晶圓(Wafer On Wafer，WOW)亦受到關注。
所述倒裝晶片封裝體的組裝中，首先，從切割的晶圓上利用筒夾(collet)來拾取半導體晶片，或者拾取被供給了半導體用黏接劑的半導體晶片，經由筒夾而供給至壓接工具上。
繼而，進行晶片-晶片、或者晶片-基板的對準來壓接。
為了形成金屬連接，以上下、或者上下任意的一者以上的連接部的金屬達到熔點以上的方式，使壓接工具的溫度上升。
積層‧多段化的晶片堆疊封裝體中，反覆進行晶片拾取、對準、壓接。
然後，為了進行半導體封裝體的保護，藉由利用密封用的樹脂將晶片上表面密封來形成密封體。
然而，現有的倒裝晶片封裝體的組裝中，由於晶片與半導體用密封材、或者晶片與基板的熱膨脹率的差，而有壓接後於半導體封裝體上產生翹曲的情況。藉由該翹曲，而產生無法進行二次成型(overmolding)、以及產生封裝體的連接不良的問題。
本發明是鑒於所述情況而形成，目的在於提供一種可抑制將半導體構件彼此連接時的翹曲的半導體裝置的製造方法。
本發明用以解決所述課題，提供一種可抑制半導體裝置的翹曲的半導體裝置的製造方法。
(1)一種半導體裝置的製造方法，其為包括具有連接部的半導體晶片及具有連接部的配線電路基板、且各自的連接部相互電性連接的半導體裝置、或者包括具有連接部的多個半導體晶片且各自的連接部相互電性連接的半導體裝置的製造方法，並且連接部包含金屬，所述半導體裝置的製造方法包括：(a)第一步驟，以中間介隔有半導體用黏接劑的狀態，於低 於連接部的金屬的熔點的溫度下，將半導體晶片及配線電路基板、或者半導體晶片彼此以各自的連接部相互接觸的方式壓接，獲得預連接體；(b)第二步驟，使用密封用樹脂將預連接體的至少一部分密封，獲得密封預連接體；以及(c)第三步驟，將密封預連接體於連接部的金屬的熔點以上的溫度下加熱，獲得密封連接體。
(2)一種半導體裝置的製造方法，其為包括具有連接部的半導體晶片及具有連接部的配線電路基板且各自的連接部經由連接凸塊而相互電性連接的半導體裝置、或者包括具有連接部的多個半導體晶片且各自的連接部經由連接凸塊而相互電性連接的半導體裝置的製造方法，並且連接部及連接凸塊包含金屬，所述半導體裝置的製造方法包括：(a)第一步驟，以中間介隔有半導體用黏接劑的狀態，於低於連接凸塊的金屬的熔點的溫度下，將半導體晶片及配線電路基板、或者半導體晶片彼此以各自的連接部與連接凸塊接觸的方式壓接，獲得預連接體；(b)第二步驟，使用密封用樹脂將預連接體的至少一部分密封，獲得密封預連接體；以及(c)第三步驟，將密封預連接體於連接凸塊的金屬的熔點以上的溫度下加熱，獲得密封連接體。
(3)所述半導體裝置的製造方法，其中於第一步驟中， 藉由將半導體晶片及配線電路基板、或者半導體晶片彼此以對向的一對預壓接用擠壓構件夾持來進行加熱及加壓，並藉此壓接。
(4)所述半導體裝置的製造方法，其中半導體用黏接劑含有重量平均分子量為10000以下的化合物及硬化劑，且80℃~130℃下的熔融黏度為6000Pa‧s以下。
(5)所述半導體裝置的製造方法，其中半導體用黏接劑含有重量平均分子量為10000以下的化合物、硬化劑、以及下述通式(1)所表示的矽烷醇化合物，[化1]R1-R2-Si(OH)3 (1)
[式中，R1表示烷基或者苯基，R2表示伸烷基]。
(6)所述半導體裝置的製造方法，其中R1為苯基。
(7)所述半導體裝置的製造方法，其中矽烷醇化合物於25℃下為固體。
(8)所述半導體裝置的製造方法，其中半導體用黏接劑含有重量平均分子量超過10000的高分子量成分。
(9)所述半導體裝置的製造方法，其中高分子量成分為重量平均分子量為30000以上且玻璃轉移溫度為100℃以下的成分。
(10)所述半導體裝置的製造方法，其中半導體黏接劑 為膜狀。
依據本發明，可提供一種能夠抑制將半導體構件彼此連接時的翹曲的半導體裝置的製造方法。即，如上所述，於在高於連接部等的金屬的熔點的溫度下進行加熱處理而形成金屬連接的步驟之前，藉由將半導體晶片以樹脂密封來形成密封體，可抑制封裝體的翹曲。
3:積層體
10:半導體晶片
12:半導體晶片本體
15:配線(連接部)
20:基板(配線電路基板)
22:基板本體
30:連接凸塊
32:凸塊(連接部)
34:貫通電極
40:黏接劑層
41:壓接頭
42:平台
43:擠壓裝置
50:中介層
60:密封用樹脂
100、200、300、400、500、600、700:半導體裝置
圖1(a)及(b)是表示半導體裝置的一實施形態的示意剖面圖。
圖2(a)及(b)是表示半導體裝置的一實施形態的示意剖面圖。
圖3是表示半導體裝置的一實施形態的示意剖面圖。
圖4是表示半導體裝置的一實施形態的示意剖面圖。
圖5是表示半導體裝置的一實施形態的示意剖面圖。
圖6(a)及(b)是表示於半導體晶片上預壓接基板的步驟的一例的步驟圖。
以下對本實施形態的半導體裝置的製造方法中使用的晶片、基板等進行說明。
<半導體裝置>
對於利用本實施形態的半導體裝置的製造方法而獲得的半導體裝置，以下使用圖1(a)及(b)以及圖2(a)及(b)來進行說明。圖1(a)及(b)表示於半導體晶片與基板間進行連接的情況下的剖面結構，圖2(a)及(b)表示於半導體晶片間進行連接的情況下的剖面結構。
圖1(a)及(b)是表示半導體裝置的一實施形態的示意剖面圖。圖1(a)中所示的半導體裝置100包括：相互對向的半導體晶片10及基板(電路配線基板)20、於半導體晶片10及基板20的相互對向的面上分別配置的配線15、將半導體晶片10及基板20的配線15相互連接的連接凸塊30、無間隙地填充於半導體晶片10及基板20間的空隙中的黏接劑層40、將半導體晶片10及基板20的連接部分加以密封的密封用樹脂60。半導體晶片10及基板20藉由配線15及連接凸塊30而進行倒裝晶片連接。配線15及連接凸塊30由黏接劑層40密封而與外部環境阻隔。同樣地，半導體晶片10及黏接劑層40由密封用樹脂60密封而與外部環境阻隔。
圖1(b)所示的半導體裝置200包括：相互對向的半導體晶片10及基板20、於半導體晶片10及基板20的相互對向的面上分別配置的凸塊32、無間隙地填充於半導體晶片10及基板20間的空隙中的黏接劑層40。半導體晶片10及基板20藉由對向的凸塊32相互連接而進行倒裝晶片連接。凸塊32由黏接劑層40密封而與外部環境阻隔。同樣地，半導體晶片10及黏接劑層40由 密封用樹脂60密封而與外部環境阻隔。黏接劑層40為半導體用黏接劑的硬化物。
圖2(a)及(b)是表示半導體裝置的其他實施形態的示意剖面圖。圖2(a)所示的半導體裝置300除了2個半導體晶片10藉由配線15及連接凸塊30而進行倒裝晶片連接的方面以外，與半導體裝置100相同。圖2(b)所示的半導體裝置400除了2個半導體晶片10藉由凸塊32而進行倒裝晶片連接的方面以外，與半導體裝置200相同。圖2(a)的更具體的態樣可列舉如下態樣：圖中上側的半導體晶片10具有銅柱及焊料(焊料凸塊)來作為連接部，且圖中下側的半導體晶片10具有墊(於連接部上鍍金)來作為連接部。
被稱為凸塊(連接凸塊)的導電性突起的材質使用金、銀、銅、焊料(主成分為例如錫-銀、錫-鉛、錫-鉍、錫-銅、錫-銀-銅等)、錫、鎳等作為主要成分，可僅包含單一的成分，亦可包含多種成分。另外，亦可以形成積層有該些金屬的結構的方式來形成。凸塊可形成於半導體晶片、或者基板上。連接部的金屬亦可包含比較廉價的銅、或者焊料。就連接可靠性提高及抑制翹曲的觀點而言，連接部的金屬亦可包含焊料。
被稱為墊的連接部的金屬面上使用金、銀、銅、焊料(主成分為例如錫-銀、錫-鉛、錫-鉍、錫-銅、錫-銀-銅等)、錫、鎳等作為主要成分，可僅包含單一的成分，亦可包含多種成分。另外，亦可以形成積層有該些金屬的結構的方式來形成。就連接可靠性 的觀點而言，墊亦可包含金、或者焊料。
配線(配線圖案)的表面上可形成包含金、銀、銅、焊料(主成分為例如錫-銀、錫-鉛、錫-鉍、錫-銅、錫-銀-銅等)、錫、鎳等來作為主要成分的金屬層，該金屬層可僅包含單一的成分，亦可包含多種成分。另外，亦可具有積層有多個金屬層的結構。連接部的金屬亦可包含比較廉價的銅、或者焊料。就提高連接可靠性及抑制翹曲的觀點而言，連接部的金屬亦可包含焊料。
半導體裝置於例如所述的凸塊-凸塊間、凸塊-墊間、凸塊-配線間連接。該情況下，於後述的加熱處理(第三步驟)中只要任一者的連接部的金屬達到熔點以上即可。
半導體晶片10並無特別限定，可使用矽、鍺等元素半導體，砷化鎵、磷化銦等化合物半導體等各種半導體。
基板20(半導體基板)若為通常的電路基板，則並無特別限制。基板20可使用：於以玻璃環氧、聚醯亞胺、聚酯、陶瓷、環氧樹脂、雙順丁烯二醯亞胺三嗪等作為主要成分的絕緣基板表面上，將金屬膜的不需要的部位蝕刻去除而形成的具有配線15(配線圖案)的電路基板；於所述絕緣基板表面藉由金屬鍍敷等而形成有配線15的電路基板；藉由於所述絕緣基板表面上印刷導電性物質而形成有配線15的電路基板等。
半導體裝置100~400中所示的結構(封裝體)亦可積層多個。該情況下，半導體裝置100~400亦可藉由包含金、銀、銅、焊料(主成分為例如錫-銀、錫-鉛、錫-鉍、錫-銅、錫-銀-銅)、 錫、鎳等的凸塊或者配線而相互電性連接。
作為將半導體裝置積層多個的方法，如圖3所示，例如可列舉矽通孔(Through-Silicon Via，TSV)技術。TSV技術中，使半導體用黏接劑介於半導體晶片之間而進行倒裝晶片連接或者積層。圖3是表示半導體裝置的其他實施形態的示意剖面圖，是使用TSV技術的半導體裝置。圖3中所示的半導體裝置500中，形成於中介層50上的配線15經由半導體晶片10的配線15與連接凸塊30而連接，藉此半導體晶片10與中介層50進行倒裝晶片連接。於半導體晶片10與中介層50之間的空隙中無間隙地填充有黏接劑層40。於所述半導體晶片10中的與中介層50相反側的表面上，經由配線15、連接凸塊30及黏接劑層40而反覆積層有半導體晶片10。半導體晶片10(最外層者除外)的表背的圖案面的配線15藉由填充於貫通半導體晶片10的內部的孔內的貫通電極34而相互連接。貫通電極34的材質可使用銅、鋁等。包含多個半導體晶片10的積層體由密封用樹脂60密封而與環境阻隔。
藉由如上所述的TSV技術，從通常不使用的半導體晶片的背面亦可獲取信號。進而，為了於半導體晶片10內垂直地通過貫通電極34，而縮短對向的半導體晶片10間、以及半導體晶片10及中介層50間的距離，可進行柔軟的連接。本實施形態的半導體裝置的製造方法於如上所述的TSV技術中，亦可應用於積層晶片與中介層間。
圖4及圖5是表示半導體裝置的其他實施形態的示意剖 面圖。圖4中所示的半導體裝置600除了多個半導體晶片10藉由配線15及連接凸塊30而於基板20上進行倒裝晶片連接的方面以外，與半導體裝置100相同。圖5中所示的半導體裝置700除了多個半導體晶片10藉由配線15及連接凸塊30而於中介層50上進行倒裝晶片連接的方面以外，與半導體裝置100相同。
<半導體裝置的製造方法>
第一實施形態的半導體裝置的製造方法為包括具有連接部的半導體晶片及具有連接部的配線電路基板且各自的連接部經由連接凸塊而相互電性連接的半導體裝置、或者包括具有連接部的多個半導體晶片且各自的連接部經由連接凸塊而相互電性連接的半導體裝置的製造方法，並且連接凸塊包含金屬，所述半導體裝置的製造方法包括：(a)第一步驟，以中間介隔有半導體用黏接劑的狀態，於低於連接凸塊的金屬的熔點的溫度下，將半導體晶片及配線電路基板、或者半導體晶片彼此以各自的連接部與連接凸塊接觸的方式壓接，獲得預連接體；(b)第二步驟，使用密封用樹脂將預連接體的至少一部分密封，獲得密封預連接體；以及(c)第三步驟，將密封預連接體於連接凸塊的金屬的熔點以上的溫度下加熱，獲得密封連接體。
藉此，例如可獲得圖1(a)或圖2(a)中所示的半導體裝置。以下，以圖2(a)為例，對各步驟進行說明。
首先，於半導體晶片10上貼附膜狀的半導體用黏接劑(以下亦有稱為「膜狀黏接劑」的情況)。膜狀黏接劑的貼附可藉由加熱加壓、輥層壓、真空層壓等來進行。膜狀黏接劑的供給面積及厚度是根據半導體晶片10及基板20的尺寸、連接凸塊30的高度等而適當設定。膜狀黏接劑可貼附於半導體晶片10上，亦可於半導體晶圓上貼附膜狀黏接劑後，切割而單片化為半導體晶片10，藉此來製作貼附有膜狀黏接劑的半導體晶片10。
使用倒裝晶片接合機等連接裝置將半導體晶片10的配線15彼此對準後，於連接凸塊30(焊料凸塊)的熔點以下的溫度下進行預壓接，獲得預連接體(第一步驟)。
繼而，將預連接體中的其中一個半導體晶片10的上表面密封，獲得密封預連接體(第二步驟)。半導體晶片10的密封可利用壓縮成形機、轉移成形機等來進行。
然後，以施加連接凸塊30的熔點以上的溫度的方式將密封預連接體進行加熱，於配線15與連接凸塊30間形成金屬連接，藉此獲得密封連接體(第三步驟)。加熱處理可利用熱壓接機、回流焊爐、加壓烘箱等來進行。
對第一步驟的一例進行說明。圖6(a)及(b)是表示於半導體晶片上預壓接基板的步驟的一例的步驟圖。
首先，如圖1的(a)所示，將半導體晶片本體12、以及具有配線15及連接凸塊30的半導體晶片10，一邊於該些之間配置黏接劑層40，一邊重疊於具有基板本體22及作為連接部的配 線15的基板20上，形成積層體3。半導體晶片10藉由半導體晶圓的切割而形成後，經拾取而搬送至基板20上，以連接凸塊30與基板20的配線15對向配置的方式來對準。積層體3形成於擠壓裝置43的平台42上，所述擠壓裝置43具有對向配置的一對作為預壓接用擠壓構件的壓接頭41及平台42。連接凸塊30設置於配線15上，所述配線15設置於半導體晶片本體12上。基板20的配線15設置於基板本體22上的既定位置。連接凸塊30及配線15分別具有由金屬材料形成的表面。
繼而，如圖1的(b)所示，藉由將積層體3以作為預壓接用擠壓構件的平台42及壓接頭41夾持而加熱及加壓，藉此於半導體晶片10上預壓接基板20。於圖6(a)及(b)的實施形態的情況下，壓接頭41配置於積層體3的半導體晶片10側，平台42配置於積層體3的基板20側。
於為了預壓接而對積層體3進行加熱及加壓時，平台42及壓接頭41中至少一者可加熱至較形成半導體晶片10的連接凸塊30的表面的金屬材料的熔點、以及形成作為基板20的連接部的配線15的表面的金屬材料的熔點更低的溫度。
於第一步驟中的預壓接時，為了使壓接工具的熱不會轉移至筒夾、半導體晶片10等上，壓接工具(預壓接用擠壓構件)拾取(帶有膜狀黏接劑的)半導體晶片10時的溫度(擠壓構件的溫度)較佳為低溫。另一方面，為了可提高膜狀黏接劑的流動性，排除捲入時的空隙，預壓接時的溫度(擠壓構件的溫度)可加熱 至高溫，但較佳為比膜狀黏接劑的反應開始溫度更低的溫度。另外，為了縮短冷卻時間，壓接工具拾取半導體晶片10時的溫度與預壓接時的溫度的差亦可減小。該差可為100℃以下、或者60℃以下。於拾取時及預壓接時，溫度可為固定。於兩者的差為100℃以下的情況下，存在壓接工具的冷卻時間縮短，生產性進一步提高的傾向。此外，所謂反應開始溫度是指使用示差掃描量熱計(differential scanning calorimeter，DSC)(珀金埃爾默(Perkin Elmer)公司製造，DSC-Pyirs1)，以樣品量為10mg、升溫速度為10℃/min、測定環境：空氣或氮氣環境的條件來測定時的初始(On-set)溫度。
就以上的觀點而言，平台42及/或壓接頭41的溫度於拾取半導體晶片時例如可為30℃以上、130℃以下，於為了預壓接而對積層體3進行加熱及加壓時例如可為50℃以上、150℃以下。
第一步驟中的連接負重依存於凸塊數，考慮到凸塊的高度不均吸收、凸塊變形量的控制等來設定。壓接時，為了排除空隙，半導體晶片10、或者半導體晶片10與基板20的連接部金屬與連接凸塊接觸，負重亦可增大。若負重大，則容易排除空隙，連接部的金屬與連接凸塊容易接觸。例如對於半導體晶片10的每一針(1凸塊)可為0.009N至0.2N。
就生產性提高的觀點而言，預壓接所花費的壓接時間可設定為短時間。所謂短時間的壓接時間是指於連接形成中，連接部加熱至230℃以上的時間(例如焊料使用時的時間)為5秒以 下。連接時間可為4秒以下、或者3秒以下。另外，若各壓接時間為比冷卻時間更短的時間，則可進一步表現出本發明的製造方法的效果。
於第二步驟，於用以形成密封預連接體的模具中搬入第一步驟後的預連接體(半導體封裝體)，於其上供給密封用樹脂60。然後，沖刷密封用樹脂60，使其硬化，藉此形成密封預連接體。
第三步驟時的加熱處理中，需要密封預連接體中的連接凸塊30的金屬的熔點以上的溫度。例如，若連接凸塊30為焊料凸塊，則可為230℃以上、330℃以下。若為低溫，則存在連接凸塊30的金屬不熔融，不形成充分的金屬連接的傾向。
就生產性提高的觀點而言，第三步驟中的連接時間可設定為短時間，亦可設為可使連接凸塊30(焊料凸塊)熔融，去除氧化膜及表面的雜質而將金屬接合形成於連接部上的程度的時間。此外，所謂短時間的連接是指於連接形成時間(正式壓接時間)中，若連接凸塊30為焊料凸塊，則230℃以上持續的時間為5秒以下。連接時間亦可為4秒以下、或者3秒以下。連接時間越為短時間，生產性越容易提高。
加熱處理若可施加密封預連接體的連接凸塊30的金屬的熔點以上的溫度，則並無特別限制，可利用熱壓接機、回流焊爐、加壓烘箱等來進行。熱壓接機中，可局部地施加熱，因此可期待翹曲減少。因此，就翹曲減少的觀點而言，可為熱壓接機。 另一方面，就生產性提高的觀點而言，亦可為能夠一次對多個封裝體進行加熱處理的回流焊爐及加壓烘箱。
第一步驟(預壓接)中可壓接多個半導體晶片10。該情況下，例如可於晶圓、中介層、或者映射基板(mapping substrate)上，平面性地一個個地預壓接多個半導體晶片10(第一步驟)，然後，總括地將多個晶片密封(第二步驟)。
另外，TSV結構的封裝體中常常看到的堆疊壓接中，立體性地壓接多個半導體晶片10。該情況下，亦可將多個半導體晶片10一個個地堆積而壓接(第一步驟)，然後將多個晶片密封(第二步驟)。
第二實施形態的半導體裝置的製造方法為包括具有連接部的半導體晶片及具有連接部的配線電路基板、且各自的連接部相互電性連接的半導體裝置、或者包括具有連接部的多個半導體晶片且各自的連接部相互電性連接的半導體裝置的製造方法，並且連接部包含金屬，所述半導體裝置的製造方法包括：(a)第一步驟，以中間介隔有半導體用黏接劑的狀態，於低於連接部的金屬的熔點的溫度下，將半導體晶片及配線電路基板、或者半導體晶片彼此以各自的連接部相互接觸的方式壓接，獲得預連接體；(b)第二步驟，使用密封用樹脂將預連接體的至少一部分密封，獲得密封預連接體；以及(c)第三步驟，將密封預連接體於連接部的金屬的熔點以上 的溫度下加熱，獲得密封連接體。
藉此，可獲得例如圖1(b)或圖2(b)中所示的半導體裝置。
第二實施形態除了於不經由連接凸塊30的情況下，連接部彼此連接的方面以外，與第一實施形態相同。
<半導體用黏接劑>
半導體用黏接劑是以重量平均分子量為10000以下的化合物以及硬化劑為代表，可如下所述含有多種成分。
(重量平均分子量為10000以下的化合物)
重量平均分子量為10000以下的化合物並無特別限制，是與一併含有的硬化劑進行反應者。重量平均分子量小至10000以下的成分於加熱時進行分解等而可成為空隙的原因，但藉由與硬化劑進行反應，則容易確保高的耐熱性。此種化合物例如可列舉環氧樹脂、(甲基)丙烯酸化合物等。
(i)環氧樹脂
環氧樹脂若為分子內具有2個以上的環氧基者，則並無特別限制。環氧樹脂例如可使用：雙酚A型、雙酚F型、萘型、苯酚酚醛清漆型、甲酚酚醛清漆型、苯酚芳烷基型、聯苯型、三苯基甲烷型、二環戊二烯型、各種多官能環氧樹脂等。該些可單獨使用或者作為兩種以上的混合體來使用。就耐熱性、操作性的觀點而言，可選自雙酚F型、苯酚酚醛清漆型、甲酚酚醛清漆型、聯苯型、三苯基甲烷型中。相對於半導體用黏接劑的整體100質量份，環氧樹脂的調配量例如可設為10質量份~50質量份。於10 質量份以上的情況下，硬化成分充分存在，因此於硬化後亦容易充分控制樹脂的流動，若為50質量份以下，則硬化物不會變得過硬，存在可進一步抑制封裝體的翹曲的傾向。
(ii)(甲基)丙烯酸化合物
(甲基)丙烯酸化合物若為分子內具有1個以上的(甲基)丙烯醯基者，則並無特別限制。(甲基)丙烯酸化合物例如可使用：雙酚A型、雙酚F型、萘型、苯酚酚醛清漆型、甲酚酚醛清漆型、苯酚芳烷基型、聯苯型、三苯基甲烷型、二環戊二烯型、茀型、金剛烷型、各種多官能丙烯酸化合物等。該些可單獨使用或者作為兩種以上的混合體來使用。相對於半導體用黏接劑的整體100質量份，(甲基)丙烯酸化合物的調配量可為10質量份~50質量份、或者15質量份~40質量份。於10質量份以上的情況下，硬化成分充分地存在，因此於硬化後亦容易充分地控制樹脂的流動。若為50質量份以下，則硬化物不會變得過硬，可進一步抑制封裝體的翹曲。
(甲基)丙烯酸化合物於室溫(25℃)下可為固體。與液狀相比，固體者難以產生空隙，另外，硬化前(B階段)的半導體用黏接劑的黏性(黏著性)小，操作性優異。
(甲基)丙烯酸化合物的官能基數可為3以下。若官能基數為3以下，則短時間的硬化充分進行，更容易抑制硬化反應率的下降(硬化的網路急速進行，存在未反應基殘存的情況)，因此硬化物特性更容易提高。
就耐熱性、流動性的觀點而言，重量平均分子量為10000以下的化合物的重量平均分子量可為100~9000、或者300~7000。重量平均分子量的測定方法與後述的重量平均分子量超過10000的高分子量成分的重量平均分子量的測定方法相同。
(硬化劑)
硬化劑例如可列舉：酚樹脂系硬化劑、酸酐系硬化劑、胺系硬化劑、咪唑系硬化劑及膦系硬化劑、偶氮化合物、有機過氧化物等。
(i)酚樹脂系硬化劑
酚樹脂系硬化劑若為分子內具有2個以上的酚性羥基者，則並無特別限制。酚樹脂系硬化劑例如可使用：苯酚酚醛清漆、甲酚酚醛清漆、苯酚芳烷基樹脂、甲酚萘酚甲醛縮聚物、三苯基甲烷型多官能酚及各種多官能酚樹脂。該些可單獨使用或者作為兩種以上的混合物來使用。
就良好的硬化性、黏接性及保存穩定性的觀點而言，酚樹脂系硬化劑相對於所述環氧樹脂的當量比(酚性羥基/環氧基、莫耳比)可為0.3~1.5、0.4~1.0、或者0.5~1.0。若當量比為0.3以上，則存在硬化性提高，黏接力進一步提高的傾向，若為1.5以下，則不會過剩地殘存未反應的酚性羥基，吸水率被抑制為低值，存在絕緣可靠性進一步提高的傾向。
(ii)酸酐系硬化劑
酸酐系硬化劑例如可使用：甲基環己烷四羧酸二酐、偏苯三 甲酸酐、均苯四甲酸酐、二苯甲酮四羧酸二酐及乙二醇雙偏苯三甲酸酐酯。該些可單獨使用或者作為兩種以上的混合物來使用。
就良好的硬化性、黏接性及保存穩定性的觀點而言，酸酐系硬化劑相對於所述環氧樹脂的當量比(酸酐基/環氧基，莫耳比)可為0.3~1.5、0.4~1.0、或者0.5~1.0。若當量比為0.3以上，則存在硬化性提高，黏接力進一步提高的傾向，若為1.5以下，則不會過剩地殘存未反應的酸酐，吸水率被抑制為低值，存在絕緣可靠性進一步提高的傾向。
(iii)胺系硬化劑
胺系硬化劑例如可使用二氰二胺。
就良好的硬化性、黏接性及保存穩定性的觀點而言，胺系硬化劑相對於所述環氧樹脂的當量比(胺/環氧基、莫耳比)可為0.3~1.5、0.4~1.0、或者0.5~1.0。若當量比為0.3以上，則存在硬化性提高，黏接力進一步提高的傾向，若為1.5以下，則不會過剩地殘存未反應的胺，存在絕緣可靠性進一步提高的傾向。
(iv)咪唑系硬化劑
咪唑系硬化劑例如可列舉：2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑、1-氰基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑偏苯三甲酸酯、1-氰基乙基-2-苯基咪唑鎓偏苯三甲酸酯、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二胺基-6-[2'-十一烷基咪唑基-(1')]-乙基-均三嗪、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙 基-均三嗪、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪異三聚氰酸加成物、2-苯基咪唑異三聚氰酸加成物、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、以及環氧樹脂與咪唑類的加成物。該些中，就優異的硬化性、保存穩定性及連接可靠性的觀點而言，亦可選自以下化合物中：1-氰基乙基-2-十一烷基咪唑、1-氰基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑偏苯三甲酸酯、1-氰基乙基-2-苯基咪唑鎓偏苯三甲酸酯、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基-均三嗪、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三嗪異三聚氰酸加成物、2-苯基咪唑異三聚氰酸加成物、2-苯基-4,5-二羥基甲基咪唑以及2-苯基-4-甲基-5-羥基甲基咪唑。該些可單獨使用或者將兩種以上併用而使用。另外，亦可形成將該些進行微膠囊化而成的潛在性硬化劑。
相對於環氧樹脂100質量份，咪唑系硬化劑的含量可為0.1質量份~20質量份、或者0.1質量份~10質量份。若咪唑系硬化劑的含量為0.1質量份以上，則存在硬化性提高的傾向，若為20質量份以下，則於金屬接合形成之前半導體用黏接劑難以硬化，因此存在難以產生連接不良的傾向。
(v)膦系硬化劑
膦系硬化劑例如可列舉：三苯基膦、四苯基鏻四苯基硼酸鹽、四苯基鏻四(4-甲基苯基)硼酸鹽及四苯基鏻(4-氟苯基)硼酸鹽。
相對於環氧樹脂100質量份，膦系硬化劑的含量可為0.1 質量份~10質量份、或者0.1質量份~5質量份。若膦系硬化劑的含量為0.1質量份以上，則存在硬化性提高的傾向，若為10質量份以下，則於金屬接合形成之前半導體用黏接劑難以硬化，因此存在難以產生連接不良的傾向。
酚樹脂系硬化劑、酸酐系硬化劑及胺系硬化劑分別可單獨使用一種或者作為兩種以上的混合物來使用。咪唑系硬化劑及膦系硬化劑分別可單獨使用，亦可與酚樹脂系硬化劑、酸酐系硬化劑或者胺系硬化劑一併使用。
(vi)有機過氧化物
有機過氧化物例如可列舉：酮過氧化物、過氧化縮酮、氫過氧化物、二烷基過氧化物、二醯基過氧化物、過氧化二碳酸酯、過氧化酯等。就保存穩定性的觀點而言，可選自氫過氧化物、二烷基過氧化物、過氧化酯中。進而，就耐熱性的觀點而言，可選自氫過氧化物、二烷基過氧化物中。
相對於(甲基)丙烯酸化合物的總重量，有機過氧化物的含量可為0.5重量%~10重量%、或者1重量%~5重量%。於0.5重量%以上的情況下，容易充分地進行硬化，於10重量%以下的情況下，硬化急遽進行，反應點變多，因此分子鏈變短，或未反應基殘存，存在可抑制可靠性下降的傾向。
所述有機過氧化物可單獨使用或者作為兩種以上的混合體而使用。
環氧樹脂及(甲基)丙烯酸化合物、與硬化劑(i)~硬化 劑(vi)的組合只要進行硬化，則並無特別限制。就操作性、保存穩定性、硬化性的觀點而言，與環氧樹脂組合的硬化劑可選自苯酚與咪唑、酸酐與咪唑、胺與咪唑、或者咪唑單獨中。若以短時間連接，則生產性提高，因此可單獨使用速硬化性優異的咪唑。若以短時間硬化，則可抑制低分子成分等揮發成分，因此亦可抑制空隙產生。就操作性、保存穩定性的觀點而言，與(甲基)丙烯酸化合物組合的硬化劑可為有機過氧化物。
硬化反應率可為80%以上、或者90%以上。若200℃(焊料熔融溫度以下)/5s的硬化反應率為80%以上，則於連接時(焊料熔融溫度以上)，焊料難以產生流動‧飛散，存在難以產生連接不良以及絕緣可靠性不良的傾向。
硬化系可為自由基聚合系。例如，作為重量平均分子量為10000以下的化合物，與陰離子聚合的環氧樹脂(環氧化物-硬化劑的硬化系)比較，較佳為自由基聚合的(甲基)丙烯酸化合物(丙烯酸-過氧化物的硬化系)。丙烯酸硬化系的化合物的硬化反應率高，因此更容易抑制空隙，更容易抑制連接部金屬的流動‧飛散。若含有陰離子聚合的環氧樹脂等，則存在硬化反應率難以達到80%以上的情況。於併用環氧樹脂的情況下，相對於(甲基)丙烯酸化合物80質量份，環氧樹脂可為20質量份以下。亦可單獨使用丙烯酸硬化系。
(矽烷醇化合物)
矽烷醇化合物是由下述通式(1)所表示者。
[化2]R1-R2-Si(OH)3 (1)
[式中，R1表示烷基或者苯基，R2表示伸烷基]
就耐熱性的觀點而言，矽烷醇化合物可於25℃下為固體。就耐熱性、流動性的觀點而言，R1可為烷基或苯基。亦可為烷基與苯基的混合。R1所表示的基團例如可列舉：苯基系、丙基系、苯基丙基系、苯基甲基系等。R2並無特別限制。就耐熱性的觀點而言，亦可為重量平均分子量為100~5000的伸烷基。就高反應性(硬化物強度)的觀點而言，可為三官能矽烷醇。
藉由在半導體用黏接劑中添加矽烷醇化合物，則流動性提高，空隙抑制性與高連接性提高。若流動性提高(黏度下降)，則容易排除於晶片接觸時所捲入的空隙。藉由使用耐熱性高的(熱重量減少量小的)矽烷醇化合物，更能夠抑制空隙產生。若熱重量減少量小，則揮發成分少，因此空隙減少，可靠性(耐回流焊性)亦進一步提高。
以半導體用黏接劑總量作為基準，矽烷醇化合物的含量可為2質量%~20質量%，就高流動化與硬化物強度(黏接力等)的觀點而言，可為2質量%~10質量%、或者2質量%~9質量%。若含量為2質量%以上，則效果(高流動化)容易表現，若為20質量%以下，則存在硬化強度增加，表現出高黏接力的傾向。若含 量稍少，則環氧樹脂或者丙烯酸樹脂的硬化物的比率變大，因此推測為表現出更高的黏接力。
(重量平均分子量超過10000的高分子量成分)
重量平均分子量超過10000的高分子量成分可列舉：環氧樹脂、苯氧基樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚碳二醯亞胺樹脂、氰酸酯酯樹脂、丙烯酸樹脂、聚酯樹脂、聚乙烯樹脂、聚醚碸樹脂、聚醚醯亞胺樹脂、聚乙烯縮醛樹脂、胺基甲酸酯樹脂、丙烯酸橡膠等。其中，亦可選自耐熱性及膜形成性優異的環氧樹脂、苯氧基樹脂、聚醯亞胺樹脂、丙烯酸樹脂、丙烯酸橡膠、氰酸酯酯樹脂、聚碳二醯亞胺樹脂等中。亦可選自耐熱性、膜形成性更為優異的環氧樹脂、苯氧基樹脂、聚醯亞胺樹脂、丙烯酸樹脂、丙烯酸橡膠中。該些高分子量成分可單獨使用或者作為兩種以上的混合體或者共聚物來使用。
於半導體用黏接劑包含環氧樹脂的情況下，重量平均分子量超過10000的高分子量成分與環氧樹脂的重量比並無特別限制。就容易保持膜狀的方面而言，相對於重量平均分子量超過10000的高分子量成分1重量份，環氧樹脂可為0.01重量份~5重量份、0.05重量份~4重量份、或者0.1重量份~3重量份。若該重量比為0.01重量份以上，則存在硬化性提高，黏接力進而提高的傾向。若該重量比為5重量份以下，則存在膜形成性特別優異的傾向。
於半導體用黏接劑包含(甲基)丙烯酸化合物的情況下， 重量平均分子量超過10000的高分子量成分與(甲基)丙烯酸化合物的重量比並無特別限制。相對於重量平均分子量超過10000的高分子量成分1重量份，(甲基)丙烯酸化合物可為0.01重量份~10重量份、0.05重量份~5重量份、或者0.1重量份~5重量份。若該重量比為0.01重量份以上，則存在硬化性提高，黏接力進而提高的傾向。若該重量比大於10重量份，則存在膜形成性特別優異的傾向。
就半導體用黏接劑對於基板及晶片的貼附性優異的觀點而言，重量平均分子量超過10000的高分子量成分的玻璃轉移溫度(Tg)可為120℃以下、100℃以下、或者85℃以下。若Tg為120℃以下，則容易利用黏接劑組成物來埋入形成於半導體晶片上的凸塊、形成於基板上的電極或者配線圖案等的凹凸，因此存在氣泡難以殘存，空隙難以產生的傾向。此外，所述所謂Tg是利用DSC(珀金埃爾默(Perkin Elmer)公司製造的DSC-7型)，以樣品量為10mg、升溫速度為10℃/min、測定環境：空氣的條件來測定時的Tg。
重量平均分子量超過10000的高分子量成分的重量平均分子量以聚苯乙烯換算為超過10000，但為了單獨顯示出更良好的膜形成性，可為30000以上、40000以上、或者50000以上。於重量平均分子量超過10000的情況下，存在膜形成性特別優異的傾向。此外，本說明書中，所謂重量平均分子量是指使用高效液相層析法(島津製作所製造的C-R4A)，以聚苯乙烯換算來測定時的 重量平均分子量。
半導體用黏接劑中可含有助熔成分，即作為顯示助熔活性(將氧化物及雜質去除的活性)的化合物的助熔活性劑。助熔活性劑可列舉：如咪唑類及胺類般具有非共價電子對的含氮化合物、羧酸類、酚類、以及醇類。與醇等相比，有機酸強烈地表現出助熔活性，存在連接性進一步提高的傾向。羧酸可進一步提高連接性及穩定性。
半導體用黏接劑中，為了控制黏度以及硬化物的物性，以及為了抑制當將半導體晶片彼此或者半導體晶片與基板連接時的空隙的產生以及吸濕率，亦可調配填料。絕緣性無機填料例如可列舉：玻璃、二氧化矽、氧化鋁、氧化鈦、碳黑、雲母、氮化硼等，其中，就操作性的觀點而言，可選自二氧化矽、氧化鋁、氧化鈦、氮化硼等中，就形狀統一性(操作性)的觀點而言，亦可選自二氧化矽、氧化鋁、氮化硼中。晶鬚可列舉：硼酸鋁、鈦酸鋁、氧化鋅、矽酸鈣、硫酸鎂、氮化硼等。樹脂填料可使用：聚胺基甲酸酯、聚醯亞胺、甲基丙烯酸甲酯樹脂、甲基丙烯酸甲酯-丁二烯-苯乙烯共聚合樹脂(MBS)等。該些填料及晶鬚亦可單獨使用或者作為兩種以上的混合體來使用。對於填料的形狀、粒徑及調配量並無特別限制。
就分散性及黏接力提高的觀點而言，亦可為表面處理填料。表面處理可列舉：縮水甘油基系(環氧系)、胺系、苯基系、苯基胺基系、丙烯酸系、乙烯基系等。
該些填料及晶鬚亦可單獨使用或者作為兩種以上的混合體來使用。對於填料的形狀、粒徑及調配量並無特別限制。另外，亦可藉由表面處理來適當調整物性。
關於粒徑，就防止倒裝晶片連接時的捲入的觀點而言，平均粒徑可為1.5μm以下，就可見性(透明性)的觀點而言，平均粒徑亦可為1.0μm以下。
就表面處理的容易度而言，表面處理可為利用環氧基矽烷系、胺基矽烷系、丙烯酸矽烷系等矽烷化合物的矽烷處理。
就分散性及流動性優異、使黏接力進一步提高的觀點而言，表面處理劑可為選自縮水甘油基系、苯基胺基系、丙烯酸系、甲基丙烯酸系化合物中的化合物。就保存穩定性的觀點而言，表面處理劑亦可為選自苯基系、丙烯酸系、甲基丙烯酸系化合物中的化合物。
與無機填料相比，樹脂填料可於260℃等的高溫下賦予柔軟性，因此適合於提高耐回流焊性。另外，由於賦予柔軟性，故而對於膜形成性提高而言亦有效果。
就絕緣可靠性的觀點而言，填料可為絕緣性。亦可為不含銀填料、焊料填料等導電性的金屬填料的半導體用黏接劑。
以半導體用黏接劑的固體成分整體作為基準，填料的調配量可為30質量%~90質量%、或者40質量%~80質量%。若該調配量為30質量%以上，則散熱性容易變高，另外，存在可進而抑制空隙產生以及吸濕率的傾向。若為90質量%以下，則容易抑 制黏度提高而產生黏接劑組成物的流動性的下降以及填料於連接部中的齧入(捕捉)，因此存在連接可靠性進一步提高的傾向。
進而，半導體用黏接劑中亦可調配：離子捕捉劑、抗氧化劑、矽烷偶合劑、鈦偶合劑、調平劑等。該些可單獨使用一種，亦可將兩種以上組合使用。關於該些的調配量，只要以表現出各添加劑的效果的方式來適當調整即可。
半導體用黏接劑可進行200℃以上的高溫下的壓接。另外，使焊料等金屬熔融而形成連接的倒裝晶片封裝體中進一步表現出效果。
半導體用黏接劑可為膜狀。若為膜狀，則存在生產性提高的傾向。
半導體用黏接劑(膜狀)的製作方法的一例如下所述。將重量平均分子量超過10000的高分子量成分、重量平均分子量為10000以下的化合物、硬化劑、填料、其他的添加劑等添加於有機溶媒中，藉由攪拌混合、混練等，使其溶解或分散，來製備樹脂清漆。然後，於實施了脫模處理的基材膜上，使用刮刀塗佈機、輥塗佈機、敷料器、模塗佈機、或者缺角輪塗佈機等來塗佈樹脂清漆後，藉由加熱而使有機溶媒減少，於基材膜上形成膜狀黏接劑。另外，亦可於藉由加熱而使有機溶媒減少之前，利用將樹脂清漆旋轉塗佈於晶圓等上而形成膜，然後進行溶媒乾燥的方法，於晶圓上形成半導體用黏接劑。
基材膜若為具有可耐受使有機溶媒揮發時的加熱條件 的耐熱性者，則並無特別限制。基材膜可例示：聚酯膜、聚丙烯膜、聚對苯二甲酸乙二酯膜、聚醯亞胺膜、聚醚醯亞胺膜、聚醚萘二甲酸酯膜、甲基戊烯膜等。基材膜並不限定於包含該些膜的單層者，亦可為包含兩種以上的材料的多層膜。
使有機溶媒從塗佈後的樹脂清漆中揮發時的條件例如可為進行50℃~200℃、0.1分鐘~90分鐘的加熱。若對安裝後的空隙以及黏度調整無影響，則可設為有機溶媒揮發至1.5質量%以下的條件。
為了提高流動性，可進一步排除捲入空隙，半導體用黏接劑的於低於連接凸塊30或凸塊32的熔點的溫度(80℃~130℃)下進行壓接的第一步驟(預壓接)時的熔融黏度可為6000Pa‧s以下、5500Pa‧s以下、5000Pa‧s以下、或者4000Pa‧s以下。但，若熔融黏度過低，則存在樹脂於晶片側面往上蔓延，附著於壓接工具上而使生產性下降的傾向。因此，預壓接時的熔融黏度可為1000Pa‧s以上。熔融黏度可使用例如流變儀(日本安東帕(Anton Paar Japan)公司製造，MCR301)來測定。
<密封用樹脂>
密封用樹脂若為半導體裝置的密封用途中使用的樹脂，則並無特別限制。此種樹脂例如可列舉：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AD型環氧樹脂、雙酚S型環氧樹脂、萘二醇型環氧樹脂、氫化雙酚A型環氧樹脂、縮水甘油基胺型環氧樹脂等。
[實施例]
以下，使用實施例來對本發明進行說明，但本發明不受該些實施例的限制。
<膜狀黏接劑的製作>
以下示出所使用的化合物。
(i)重量平均分子量超過10000的高分子量成分
丙烯酸橡膠(日立化成股份有限公司製造，KH-C865，Tg：0~12℃，Mw：450000~650000)
苯氧基樹脂(東都化成股份有限公司，ZX-1356-2，Tg：約71℃，Mw：約63000)
(ii)重量平均分子量為10000以下的化合物：(甲基)丙烯酸化合物
茀骨架丙烯酸酯(大阪燃氣化學(Osaka Gas Chemicals)股份有限公司，EA0200，二官能基)
(iii)重量平均分子量為10000以下的化合物：環氧樹脂
含三苯酚甲烷骨架的多官能固體環氧化物(三菱化學股份有限公司，EP1032H60)
雙酚F型液狀環氧化物(三菱化學股份有限公司，YL983U)
(iv)硬化劑
二枯基過氧化物(日油股份有限公司，帕枯米爾D(Percumyl D))
2,4-二胺-6[2'-甲基咪唑基-(1')-乙基-均三嗪異三聚氰酸加成 物(四國化成股份有限公司，2MAOK-PW))
(v)無機填料
二氧化矽填料(雅都瑪科技(Admatechs)股份有限公司，SE2050，平均粒徑為0.5μm)
環氧基矽烷表面處理的二氧化矽填料(雅都瑪科技(Admatechs)股份有限公司、SE2050SEJ，平均粒徑為0.5μm)
甲基丙烯酸表面處理的奈米二氧化矽填料(雅都瑪科技(Admatechs)股份有限公司，YA050C-SM，以下記作SM奈米二氧化矽，平均粒徑為約50nm)
(vi)樹脂填料
有機填料(日本羅門哈斯(Rohm and Haas Japan)股份有限公司製造，EXL-2655：核殼類型有機微粒子)
(vii)助熔劑
2-甲基戊二酸(奧德里奇(Aldrich)，熔點：約77℃)
(膜狀黏接劑的製作方法)
對於表1中所示的質量比例的(甲基)丙烯酸化合物或者環氧樹脂、無機填料、樹脂填料及助熔劑，以成為NV60%(相對於溶媒40質量%，液狀成分、固體成分、填料等構成黏接劑的所有成分為60質量%)的方式添加有機溶媒(甲基乙基酮)。然後，添加與固體成分相同重量的Φ 1.0mm及Φ 2.0mm的珠粒，利用珠磨機(日本弗里茨(Fritsch Japan)股份有限公司，行星式微粉碎機P-7)攪拌30分鐘。然後，添加高分子量成分，再次利用珠磨機 來攪拌30分鐘。攪拌後，添加硬化劑進行攪拌，然後將所使用的珠粒藉由過濾而去除，獲得兩種樹脂清漆。
利用小型精密塗敷裝置(廉井精機股份有限公司製造)，將所製作的各樹脂清漆分別塗敷於表面經脫模處理的基材膜上，將所塗敷的樹脂清漆於潔淨烘箱(愛斯佩克(Espec)股份有限公司製造)中進行乾燥(70℃/10min)，藉此獲得兩種膜狀黏接劑A及B。
Figure 106112128-A0305-02-0035-1
<半導體裝置的製造>
(實施例1)
步驟1：將所述製作的膜狀黏接劑剪切(8mm×8mm×0.045mmt)，貼附於基板(20mm×27mm，0.41mm厚，連接部金屬：Cu(有機保焊劑(Organic Solderability Preservatives，OSP)處理)，製品名：HCTEG-P1180-02，日立化成電子股份有限公司製造)上。於其上，使用熱壓接機(FCB3，松下(Panasonic)股份有限公司 製造)，以平台溫度為80℃、預壓接溫度為130℃、預壓接時間為2秒的條件，來預壓接帶有焊料凸塊的半導體晶片(晶片尺寸：7.3mm×7.3mm×0.15mmt，凸塊高度：銅柱+焊料共計約45μm，凸塊數為328針，間距為80μm，製品名：SM487A-HC-PLT，住友商事九州股份有限公司製造)。
步驟2：對進行了預壓接的半導體封裝體(預連接體)，使用成型裝置(Techno Malutishi股份有限公司製造)來進行晶片上表面的密封，形成密封體(密封預連接體)。
步驟3：對於所獲得的密封體，使用所述熱壓接機(FCB3，松下(Panasonic)股份有限公司製造)，以平台溫度80℃、壓接溫度280℃進行加熱處理，製作半導體裝置(密封連接體)。
(其他的實施例)
除了如表2所示，使用熱壓接機(FCB3，松下(Panasonic)股份有限公司製造)或者回流焊裝置(田村(Tamura)股份有限公司製作所製造)進行加熱處理，且使用膜狀黏接劑A或B作為膜狀黏接劑，而且將預壓接溫度設為130℃(使用膜狀黏接劑A的情況)或者80℃(使用膜狀黏接劑B的情況)以外，以與實施例1相同的方式製作半導體裝置。
(比較例)
除了如表2所示，使用熱壓接機(FCB3，松下(Panasonic)股份有限公司製造)或者回流焊裝置(田村(Tamura)股份有限公司製作所製造)進行加熱處理，且使用膜狀黏接劑A或B作為 膜狀黏接劑，將步驟2與步驟3調換，而且將預壓接溫度設為130℃(使用膜狀黏接劑A的情況)或者80℃(使用膜狀黏接劑B的情況)以外，以與實施例1相同的方式製作半導體裝置。此外，所謂將步驟2與步驟3調換，是指於基板與半導體晶片的連接完畢後，使用成型裝置來進行密封處理。
<評價>
‧熔融黏度評價
對於所述製作的膜狀黏接劑，使用流變儀(日本安東帕(Anton Paar Japan)公司製造，MCR301)以及夾具(拋棄式盤(直徑8mm)及拋棄式樣品碟)，以樣品厚度為400μm、升溫速度為10℃/min、頻率為1Hz的條件，測定步驟1(預壓接溫度：80℃~130℃)中的熔融黏度。將結果示於表2中。
‧翹曲評價
對所述製作的各半導體裝置，使用非接觸式形狀測定裝置(索尼(SONY)製造)，測量晶片的對角方向的兩邊形狀。使用EXCEL來修正測量資料的偏差，將一邊的凹凸的最大值與最小值的差作為翹曲量(μm)。將結果示於表2中。
Figure 106112128-A0305-02-0037-2
10:半導體晶片
15:配線(連接部)
20:基板(配線電路基板)
30:連接凸塊
32:凸塊(連接部)
40:黏接劑層
60:密封用樹脂
100、200:半導體裝置

Claims (10)

  1. 一種半導體裝置的製造方法，其為包括具有連接部的半導體晶片及具有連接部的配線電路基板且各自的所述連接部相互電性連接的半導體裝置、或者包括具有連接部的多個半導體晶片且各自的所述連接部相互電性連接的半導體裝置的製造方法，並且所述連接部包含金屬，所述半導體裝置的製造方法包括：(a)第一步驟，以中間介隔有半導體用黏接劑的狀態，於低於所述連接部的金屬的熔點的溫度下，將所述半導體晶片及所述配線電路基板、或者所述半導體晶片彼此以各自的所述連接部相互接觸的方式來壓接，獲得預連接體；(b)第二步驟，使用密封用樹脂將所述預連接體的至少一部分密封，獲得密封預連接體；以及(c)第三步驟，將所述密封預連接體於所述連接部的金屬的熔點以上的溫度下加熱，獲得密封連接體。
  2. 一種半導體裝置的製造方法，其為包括具有連接部的半導體晶片及具有連接部的配線電路基板且各自的所述連接部經由連接凸塊而相互電性連接的半導體裝置、或者包括具有連接部的多個半導體晶片且各自的所述連接部經由連接凸塊而相互電性連接的半導體裝置的製造方法，並且所述連接部及所述連接凸塊包含金屬， 所述半導體裝置的製造方法包括：(a)第一步驟，以中間介隔有半導體用黏接劑的狀態，於低於所述連接凸塊的金屬的熔點的溫度下，將所述半導體晶片及所述配線電路基板、或者所述半導體晶片彼此以各自的所述連接部與所述連接凸塊接觸的方式壓接，獲得預連接體；(b)第二步驟，使用密封用樹脂將所述預連接體的至少一部分密封，獲得密封預連接體；以及(c)第三步驟，將所述密封預連接體於所述連接凸塊的金屬的熔點以上的溫度下加熱，獲得密封連接體。
  3. 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法，其中於所述第一步驟中，將所述半導體晶片及所述配線電路基板、或者所述半導體晶片彼此藉由以對向的一對擠壓構件夾持來進行加熱及加壓，並藉此壓接。
  4. 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法，其中所述半導體用黏接劑含有重量平均分子量為10000以下的化合物以及硬化劑，且80℃~130℃下的熔融黏度為6000Pa‧s以下。
  5. 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法，其中所述半導體用黏接劑含有重量平均分子量為10000以下的化合物、硬化劑、以及下述通式(1)所表示的矽烷醇化合物， R1-R2-Si(OH)3 (1)式中，R1表示烷基或者苯基，R2表示伸烷基。
  6. 如申請專利範圍第5項所述的半導體裝置的製造方法，所述R1為苯基。
  7. 如申請專利範圍第5項所述的半導體裝置的製造方法，其中所述矽烷醇化合物於25℃下為固體。
  8. 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法，其中所述半導體用黏接劑含有重量平均分子量超過10000的高分子量成分。
  9. 如申請專利範圍第8項所述的半導體裝置的製造方法，其中所述高分子量成分為重量平均分子量為30000以上且玻璃轉移溫度為100℃以下的成分。
  10. 如申請專利範圍第1項或第2項所述的半導體裝置的製造方法，其中所述半導體用黏接劑為膜狀。
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